KR950010243A - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
- Publication number
- KR950010243A KR950010243A KR1019930020356A KR930020356A KR950010243A KR 950010243 A KR950010243 A KR 950010243A KR 1019930020356 A KR1019930020356 A KR 1019930020356A KR 930020356 A KR930020356 A KR 930020356A KR 950010243 A KR950010243 A KR 950010243A
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- KR
- South Korea
- Prior art keywords
- laser device
- layer
- material layer
- semiconductor laser
- cladding
- Prior art date
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- Semiconductor Lasers (AREA)
Abstract
캐리어 제한은 그대로 유지한 채 모드 크기를 증가시킬 수 있는 구조를 갖는 반도체 레이저 소자를 제공한다.Provided is a semiconductor laser device having a structure capable of increasing the mode size while maintaining the carrier limitation.
반도체 기판상에 제1클래드층, 활성층 및 제2클래드층을 형성하되, 상기 제1및 제2클래드층은 제1의 밴드갭에 에너지를 갖는 제1물질층과 상기 제1의 밴드갭 에너지 보다 낮은 제1밴드갭 에너지를 갖는 제2물질층이 교대로 적층하여 형성한다. 제1물질층은 InGaAIP또는 InGaP로 구성하고, 상기 제2물질층은 양자 장벽 수주인 InGaAIP로 구성한다. 캐리어 제한은 종래의 레이저 소자와 동일한 수준을 유지하는 반면, 광모드 크기만 증가하여 COD수준이 높아지고, 고출력 동작이 가능하다.A first cladding layer, an active layer, and a second cladding layer are formed on a semiconductor substrate, wherein the first and second cladding layers are formed of a first material layer having energy in a first bandgap and a first bandgap energy. A second material layer having a low first bandgap energy is formed by alternately stacking. The first material layer is composed of InGaAIP or InGaP, and the second material layer is composed of InGaAIP which is a quantum barrier order. Carrier confinement is maintained at the same level as the conventional laser device, while only the optical mode size is increased, thereby increasing the COD level and enabling high power operation.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 본 발명에 따른 반도체 레이저 소자의 일례를 나타내는 단면도이며,3 is a cross-sectional view showing an example of a semiconductor laser device according to the present invention,
제4A도 및 제4B도는 종래의 단일 클래드층을 사용한 레이저 다이오드와 본 발명의 복합 구조의 클래드층을 사용한 레이저 다이오드의 에너지 밴드캡 구조를 나타내며;4A and 4B show an energy band cap structure of a laser diode using a conventional single cladding layer and a laser diode using a cladding layer of a composite structure of the present invention;
제5A도 및 제5B도는 종래의 단일 클래드층을 사용한 레이저 다이오드와 본 발명의 복합 구조의 클래드층을 사용한 레이저 다이오드의 광출력 분포도를 나타낸다.5A and 5B show light distribution patterns of a conventional laser diode using a single cladding layer and a laser diode using the cladding layer of the composite structure of the present invention.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930020356A KR950010243A (en) | 1993-09-28 | 1993-09-28 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930020356A KR950010243A (en) | 1993-09-28 | 1993-09-28 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950010243A true KR950010243A (en) | 1995-04-26 |
Family
ID=66824467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930020356A KR950010243A (en) | 1993-09-28 | 1993-09-28 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950010243A (en) |
-
1993
- 1993-09-28 KR KR1019930020356A patent/KR950010243A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |