KR950013129A - High power laser diode - Google Patents

High power laser diode Download PDF

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Publication number
KR950013129A
KR950013129A KR1019930021943A KR930021943A KR950013129A KR 950013129 A KR950013129 A KR 950013129A KR 1019930021943 A KR1019930021943 A KR 1019930021943A KR 930021943 A KR930021943 A KR 930021943A KR 950013129 A KR950013129 A KR 950013129A
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KR
South Korea
Prior art keywords
increasing
material layer
laser diode
bandgap energy
layer
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Withdrawn
Application number
KR1019930021943A
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Korean (ko)
Inventor
김택
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019930021943A priority Critical patent/KR950013129A/en
Publication of KR950013129A publication Critical patent/KR950013129A/en
Withdrawn legal-status Critical Current

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Abstract

캐리어 제한은 그대로 유지하면서, 수직 방향의 광 제한을 낮추어 수직방사각을 감소시키고, 모우드의 크기를 증가시켜 광파워 밀도를 낮추고 COD 수준을 높일 수 있는 레이저 다이오드가 개시되어 있다. InGaP 활성층의 하부에 형성된 n형 InGaAlP 클래드층을 알루미늄의 성분을 변화시켜 밴드갭 에너지가 높은 제1물질층과 밴드갭 에너지가 상기 제1물질층을 구성하는 물질보다 낮은 제2물질층을 교대로 저긍하여 형성한다. 광모드 크기가 증가하여 COD 수준이 높아지고, 광파워 밀도를 낮추므로, 고출력 동작이 가능하다.A laser diode is disclosed that can reduce the vertical radiation angle by increasing the light limit in the vertical direction while increasing the size of the mode, while lowering the light limit in the vertical direction, thereby lowering the optical power density and increasing the COD level. The n-type InGaAlP cladding layer formed on the lower portion of the InGaP active layer is altered so that the first material layer having a high bandgap energy and the second material layer having a lower bandgap energy than the material constituting the first material layer are alternately changed. Form with pride. The increased optical mode size results in higher COD levels and lower optical power density, enabling higher power operation.

Description

고출력 레이저 다이오드High power laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 레이저 다이오드의 일례를 나타내는 단면도이며;2 is a cross-sectional view showing an example of a laser diode according to the present invention;

제3A도 및 제3B도는 종래의 단일 클래드층을 사용한 레이저 다이오드와 본 발명의 복합 구조의 n형 제1클래드층을 사용한 레이저 다이오드의 에너지 밴드갭 구조를 나타낸다.3A and 3B show an energy bandgap structure of a laser diode using a conventional single cladding layer and a laser diode using the n-type first cladding layer of the composite structure of the present invention.

Claims (2)

반도체 기판과 상기 기판상에 형성된 n영 제1클래드층, 활성층 및 P형 제2클래드층을 구비한 레이저 다이오드에 있어서, 상기 제1클래드층은 제1의 밴드갭 에너지를 갖는 제1물질층과 상기 제1의 밴드갭 에너지 보다 낮은 제2 밴드갭 에너지를 갖는 제2물질층이 교대로 적층하여 형성된 복합층인 것을 특징으로 하는 레이저 다이오드.A laser diode having a semiconductor substrate and an n-type first cladding layer, an active layer, and a P-type second cladding layer formed on the substrate, wherein the first cladding layer comprises: a first material layer having a first bandgap energy; And a second material layer having a second bandgap energy lower than the first bandgap energy. 제1항에 있어서, 상기 제1 및 제2물질층은 InGaAIP로 구성되고, 상기 활성층은 InGaP로 구성된 것임을 특징으로 하는 반도체 레이저 소자.The semiconductor laser device of claim 1, wherein the first and second material layers are formed of InGaAIP, and the active layer is formed of InGaP. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930021943A 1993-10-21 1993-10-21 High power laser diode Withdrawn KR950013129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930021943A KR950013129A (en) 1993-10-21 1993-10-21 High power laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930021943A KR950013129A (en) 1993-10-21 1993-10-21 High power laser diode

Publications (1)

Publication Number Publication Date
KR950013129A true KR950013129A (en) 1995-05-17

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KR1019930021943A Withdrawn KR950013129A (en) 1993-10-21 1993-10-21 High power laser diode

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100371135B1 (en) * 1999-09-10 2003-02-05 한국전자통신연구원 Declinable-word morphology analyzing apparatus using a declinable-word derivative-dictionary and method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100371135B1 (en) * 1999-09-10 2003-02-05 한국전자통신연구원 Declinable-word morphology analyzing apparatus using a declinable-word derivative-dictionary and method therefor

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19931021

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid