JPH08139407A - Optical semiconductor device having semiconductor quantum well structure - Google Patents
Optical semiconductor device having semiconductor quantum well structureInfo
- Publication number
- JPH08139407A JPH08139407A JP30143394A JP30143394A JPH08139407A JP H08139407 A JPH08139407 A JP H08139407A JP 30143394 A JP30143394 A JP 30143394A JP 30143394 A JP30143394 A JP 30143394A JP H08139407 A JPH08139407 A JP H08139407A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- quantum well
- well structure
- type impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体量子井戸構造を
有する半導体レーザ、光変調素子、光増幅素子などの光
半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device such as a semiconductor laser having a semiconductor quantum well structure, an optical modulator and an optical amplifier.
【０００２】[0002]
【従来の技術】従来、半導体量子井戸構造を有する半導
体レーザ、光変調素子、光増幅素子などの光半導体装置
が種々提案されている。2. Description of the Related Art Conventionally, various optical semiconductor devices such as a semiconductor laser having a semiconductor quantum well structure, an optical modulator and an optical amplifier have been proposed.
【０００３】そのような従来提案されている半導体量子
井戸構造を有する光半導体装置において、その半導体量
子井戸構造は、図２及び図３で符号Ｑで示すように、半
導体障壁層Ｂと半導体井戸層Ｗとが交互順次に繰返し積
層されている構成を有する。In such a conventionally proposed optical semiconductor device having a semiconductor quantum well structure, the semiconductor quantum well structure has a semiconductor barrier layer B and a semiconductor well layer as indicated by reference numeral Q in FIGS. 2 and 3. W and W are alternately and repeatedly laminated.
【０００４】そして、そのような構成を有する半導体量
子井戸構造Ｑにおいて、半導体障壁層Ｂが、図２に示す
ような、ｐ型不純物またはｎ型不純物を導入している層
２の単層でなる構成を有するものと、図３に示すよう
な、ｐ型不純物またはｎ型不純物のいずれも意図的に導
入していない層１とｐ型不純物またはｎ型不純物を導入
している層２とｐ型不純物またはｎ型不純物のいずれも
意図的に導入していない層３とが層１及び３の厚さを互
いに等しくしてそれらの順に積層されている構成を有す
るものとがある。In the semiconductor quantum well structure Q having such a structure, the semiconductor barrier layer B is a single layer of the layer 2 into which the p-type impurity or the n-type impurity is introduced as shown in FIG. 3, a layer 1 in which neither p-type impurities nor n-type impurities are intentionally introduced, and a layer 2 in which p-type impurities or n-type impurities are introduced and p-type as shown in FIG. There is a structure in which a layer 3 into which neither impurities nor n-type impurities are intentionally introduced and the layers 1 and 3 have the same thickness and are laminated in that order.
【０００５】図２及び図３に示すような、半導体障壁層
Ｂがｐ型不純物またはｎ型不純物を導入している層２を
有する半導体量子井戸構造Ｑは、変調ドープ型と称され
ている。A semiconductor quantum well structure Q having a layer 2 in which a semiconductor barrier layer B introduces a p-type impurity or an n-type impurity, as shown in FIGS. 2 and 3, is called a modulation-doped type.
【０００６】そのような変調ドープ型の半導体量子井戸
構造Ｑを有する光半導体装置は、その光半導体装置が半
導体レ―ザであるとするとき、半導体量子井戸構造Ｑを
構成している半導体障壁層Ｂのｐ型不純物またはｎ型不
純物を導入している層２がｐ型不純物を導入している層
である場合、半導体障壁層Ｂがｐ型不純物またはｎ型不
純物を導入している層を有していない半導体量子井戸構
造を有する光半導体装置としての半導体レ―ザの場合に
比し、狭線幅の発振スペクトルが得られ、また、半導体
量子井戸構造Ｑを構成している半導体障壁層Ｂのｐ型不
純物またはｎ型不純物を導入している層２がｎ型不純物
を導入している層である場合、半導体障壁層Ｂがｐ型不
純物またはｎ型不純物を導入している層を有していない
半導体量子井戸構造を有する光半導体装置としての半導
体レ―ザの場合に比し、低いしきい値電流密度でのレー
ザ発振が得られる、というように、変調ドープ型でな
い、従って、半導体障壁層Ｂがｐ型不純物またはｎ型不
純物を導入している層を有していない半導体量子井戸構
造Ｑを有する光半導体装置の場合に比し、種々の優れた
特徴を有する。An optical semiconductor device having such a modulation-doped semiconductor quantum well structure Q is a semiconductor barrier layer which constitutes the semiconductor quantum well structure Q when the optical semiconductor device is a semiconductor laser. When the layer 2 of B in which the p-type impurity or the n-type impurity is introduced is a layer in which the p-type impurity is introduced, the semiconductor barrier layer B has a layer in which the p-type impurity or the n-type impurity is introduced. In comparison with the case of a semiconductor laser as an optical semiconductor device having a semiconductor quantum well structure which is not provided, an oscillation spectrum having a narrow line width is obtained, and a semiconductor barrier layer B forming a semiconductor quantum well structure Q is obtained. When the layer 2 in which the p-type impurity or the n-type impurity is introduced is a layer in which the n-type impurity is introduced, the semiconductor barrier layer B has a layer in which the p-type impurity or the n-type impurity is introduced. Not a semiconductor quantum well structure As compared with the case of a semiconductor laser as an optical semiconductor device having a laser diode, it is possible to obtain laser oscillation at a lower threshold current density. Therefore, the semiconductor barrier layer B is not a p-type impurity. Alternatively, it has various excellent characteristics as compared with an optical semiconductor device having a semiconductor quantum well structure Q that does not have a layer into which n-type impurities are introduced.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上述し
た変調ドープ型の半導体量子井戸構造Ｑを有する光半導
体装置において、その半導体量子井戸構造Ｑを構成して
いる半導体障壁層Ｂのｐ型不純物またはｎ型不純物を導
入している層２は、それがｐ型不純物またはｎ型不純物
を導入して形成されることから、そのようにｐ型不純物
またはｎ型不純物を導入して形成する必要を有しない、
ｐ型不純物またはｎ型不純物のいずれも意図的に導入し
ていない層１及び層３に比し、表面モフォロジーの劣
化、結晶配列の乱れ、不純物元素の偏析などの点で、一
般に膜質が悪い。However, in the above-described optical semiconductor device having the modulation-doped semiconductor quantum well structure Q, the p-type impurity or n of the semiconductor barrier layer B forming the semiconductor quantum well structure Q is used. Since the layer 2 into which the type impurities are introduced is formed by introducing the p-type impurities or the n-type impurities, it is not necessary to form the layer 2 by introducing the p-type impurities or the n-type impurities. ,
Compared with the layers 1 and 3 in which neither p-type impurities nor n-type impurities are intentionally introduced, the film quality is generally poor in terms of deterioration of surface morphology, disorder of crystal arrangement, segregation of impurity elements, and the like.
【０００８】このため、図２に示すような、半導体障壁
層Ｂがｐ型不純物またはｎ型不純物を導入している層２
の単層である構成を有し、そして、そのｐ型不純物また
はｎ型不純物を導入している層２上に、それに接して、
半導体井戸層Ｗが形成されている構成を有する半導体量
子井戸構造Ｑを有する光半導体装置の場合、その半導体
量子井戸構造Ｑを構成している半導体井戸層Ｗが、半導
体障壁層Ｂの悪い膜質に影響された悪い膜質を有するも
のにしか形成されていない。Therefore, as shown in FIG. 2, the semiconductor barrier layer B has a layer 2 into which p-type impurities or n-type impurities are introduced.
On the layer 2 into which the p-type impurity or the n-type impurity is introduced, in contact with it,
In the case of the optical semiconductor device having the semiconductor quantum well structure Q having the structure in which the semiconductor well layer W is formed, the semiconductor well layer W forming the semiconductor quantum well structure Q has a poor film quality of the semiconductor barrier layer B. It is formed only on the affected film having a bad film quality.
【０００９】従って、図２に示すような半導体量子井戸
構造Ｑを有する光半導体装置の場合、それが所期の優れ
た特性を発揮しない、という欠点を有していた。Therefore, the optical semiconductor device having the semiconductor quantum well structure Q as shown in FIG. 2 has a drawback that it does not exhibit the desired excellent characteristics.
【００１０】一方、図３に示すような、半導体障壁層Ｂ
がｐ型不純物またはｎ型不純物のいずれも意図的に導入
していない層１とｐ型不純物またはｎ型不純物を導入し
ている層２とｐ型不純物またはｎ型不純物のいずれも意
図的に導入していない層３とがそれらの順に積層されて
いる構成を有している半導体量子井戸構造Ｑを有する光
半導体装置の場合、半導体量子井戸構造Ｑを構成してい
る半導体井戸層Ｗが、ｐ型不純物またはｎ型不純物のい
ずれも意図的に導入していない層３上に、それに接して
形成されるので、その半導体井戸層Ｗが、比較的良好な
膜質を有する。On the other hand, a semiconductor barrier layer B as shown in FIG.
Is a layer 1 into which neither p-type impurities nor n-type impurities are intentionally introduced, and a layer 2 into which p-type impurities or n-type impurities are introduced, and neither p-type impurities nor n-type impurities are intentionally introduced. In the case of an optical semiconductor device having a semiconductor quantum well structure Q having a structure in which the undoped layer 3 is stacked in that order, the semiconductor well layer W forming the semiconductor quantum well structure Q is p Since the semiconductor well layer W is formed on and in contact with the layer 3 into which neither the type impurities nor the n-type impurities are intentionally introduced, the semiconductor well layer W has a relatively good film quality.
【００１１】しかしながら、図３に示すような半導体量
子井戸構造Ｑを有する光半導体装置の場合、その半導体
量子井戸構造Ｑを構成している半導体障壁層Ｂのｐ型不
純物またはｎ型不純物のいずれも意図的に導入していな
い層１及び３が互いに等しい厚さを有するので、半導体
障壁層Ｂのｐ型不純物またはｎ型不純物のいずれも意図
的に導入していない層３の、その上にそれと接して形成
される半導体井戸層Ｗが良好な膜質を有するものとして
形成されるのに十分な厚さを、一般にＤM とするとき、
ｐ型不純物またはｎ型不純物のいずれも意図的に導入し
ていない層１が、その上にそれと接して半導体障壁層の
半導体井戸層Ｗが形成される層でないことから、厚さＤ
M よりも薄い厚さ（これを一般にＤD とする）で足りる
にもかかわらず、ＤM の厚さを有し、従って、半導体障
壁層Ｂが、厚さＤM 及びＤD の差（ＤM −ＤD ）分、ｐ
型不純物またはｎ型不純物のいずれも意図的に導入して
いない層３及び１がそれぞれ厚さＤM 及びＤD である場
合に比し、光半導体装置としての特性が良好に得られな
い、という欠点を有していた。However, in the case of the optical semiconductor device having the semiconductor quantum well structure Q as shown in FIG. 3, neither the p-type impurity nor the n-type impurity of the semiconductor barrier layer B constituting the semiconductor quantum well structure Q is included. Since the layers 1 and 3 which are not intentionally introduced have the same thickness as each other, the layer 3 on which the p-type impurity or the n-type impurity of the semiconductor barrier layer B is not intentionally introduced, When the semiconductor well layer W formed in contact with the semiconductor well layer W has a good film quality and is generally formed to have a thickness D M ,
Since the layer 1 into which neither p-type impurities nor n-type impurities are intentionally introduced is not the layer on which the semiconductor well layer W of the semiconductor barrier layer is formed in contact therewith, the thickness D
Despite the need for a thickness less than M (generally referred to as D D ), it has a thickness of D M , and therefore the semiconductor barrier layer B has a thickness of D M and D D (D M- DD ) minutes, p
As compared with the case where the layers 3 and 1 into which neither the type impurities nor the n-type impurities are intentionally introduced have the thicknesses D M and D D , respectively, the characteristics as an optical semiconductor device cannot be obtained well. It had drawbacks.
【００１２】よって、本発明は、上述した欠点のない、
新規な半導体量子井戸構造を有する光半導体装置を提案
せんとするものである。Thus, the present invention does not have the drawbacks mentioned above,
An attempt is made to propose an optical semiconductor device having a novel semiconductor quantum well structure.
【００１３】[0013]
【課題を解決するための手段】半導体障壁層と半導体井
戸層とが交互順次に繰り返し積層されている構成を有す
る半導体量子井戸構造を有し、上記半導体量子井戸構造
を構成している上記半導体障壁層が、ｐ型不純物または
ｎ型不純物のいずれも意図的に導入していない第１の層
とｐ型不純物またはｎ型不純物を導入している第２の層
とｐ型不純物またはｎ型不純物のいずれも意図的に導入
していない第３の層とがそれらの順に積層されている構
成を有する光半導体装置において、上記半導体量子井戸
構造を構成している上記半導体障壁層の上記第３の層
が、上記第１の層に比し厚い厚さを有する。A semiconductor quantum well structure having a structure in which a semiconductor barrier layer and a semiconductor well layer are alternately and repeatedly stacked, and the semiconductor barrier forming the semiconductor quantum well structure. The layer includes a first layer into which neither p-type impurities nor n-type impurities are intentionally introduced, and a second layer into which p-type impurities or n-type impurities are introduced and p-type impurities or n-type impurities. In an optical semiconductor device having a structure in which a third layer not intentionally introduced is laminated in that order, the third layer of the semiconductor barrier layer forming the semiconductor quantum well structure. Has a larger thickness than the first layer.
【００１４】[0014]
【作用・効果】本発明による半導体量子井戸構造を有す
る光半導体装置によれば、その半導体量子井戸構造を構
成している半導体障壁層のｐ型不純物またはｎ型不純物
のいずれも意図的に導入していない第３の層が、ｐ型不
純物またはｎ型不純物のいずれも意図的に導入していな
い第１の層に比し厚い厚さを有するので、ｐ型不純物ま
たはｎ型不純物のいずれも意図的に導入していない第３
の層の、その上にそれと接して形成された半導体井戸層
が良好な膜質を有するものとして形成されるのに十分な
厚さを、一般に前述したＤM とするとき、ｐ型不純物ま
たはｎ型不純物のいずれも意図的に導入していない第１
の層を、厚さＤM よりも薄い前述した厚さＤD にするこ
とができ、このため、半導体障壁層のｐ型不純物または
ｎ型不純物のいずれも意図的に導入していない第３の層
が、その上にそれと接して形成される半導体井戸層が良
好な膜質を有するものとして形成されるのに十分な厚さ
ＤMを有しながら、半導体障壁層の厚さを、図３に示す
半導体量子井戸構造Ｑを構成している半導体障壁層Ｂの
場合に比し、厚さＤM 及びＤD の差（ＤM −ＤD ）分薄
く形成し得、よって、この（ＤM −ＤD ）分、光半導体
装置としての特性が、図３に示す半導体量子井戸構造Ｑ
を有する光半導体装置の場合に比し、良好に得られる。According to the optical semiconductor device having the semiconductor quantum well structure of the present invention, either the p-type impurity or the n-type impurity of the semiconductor barrier layer constituting the semiconductor quantum well structure is intentionally introduced. Since the third layer which has not been introduced has a thickness larger than that of the first layer which has not intentionally introduced either p-type impurities or n-type impurities, neither p-type impurities nor n-type impurities are intended. Thirdly not introduced
Layer of a sufficient thickness to the semiconductor well layer formed in contact with it over is formed as having a good film quality, generally when the D M described above, p-type impurities or n-type No intentionally introducing any of the impurities 1st
Can have the aforementioned thickness D D less than the thickness D M , so that the third barrier layer does not intentionally introduce either p-type impurities or n-type impurities of the semiconductor barrier layer. The thickness of the semiconductor barrier layer is shown in FIG. 3 while the layer has a thickness D M sufficient for the semiconductor well layer formed thereon in contact with it to have good film quality. semiconductor quantum wells constitute the structure Q than when in the semiconductor barrier layer B has a thickness D difference M and D D (D M -D D) minutes thin and obtained showing, therefore, the (D M - D D) component, the characteristics of the optical semiconductor device, a semiconductor quantum well structure Q shown in FIG. 3
In comparison with the case of an optical semiconductor device having a.
【００１５】[0015]
【実施例１】次に、本発明による半導体量子井戸構造を
有する光半導体装置の実施例を述べよう。Embodiment 1 Next, an embodiment of an optical semiconductor device having a semiconductor quantum well structure according to the present invention will be described.
【００１６】本発明による半導体量子井戸構造を有する
光半導体装置の実施例は、半導体量子井戸構造を有する
半導体レーザ、光変調素子、光増幅素子などの光半導体
装置において、その半導体量子井戸構造が、図１で図２
及び図３の場合と同じ符号Ｑで示すように、図３で上述
した従来提案されている半導体量子井戸構造を有する光
半導体装置の場合と同様に、半導体障壁層Ｂと半導体井
戸層Ｗとが交互順次に繰返し積層されている構成を有
し、そして、半導体障壁層Ｂが、ｐ型不純物またはｎ型
不純物のいずれも意図的に導入していない層１とｐ型不
純物またはｎ型不純物を導入している層２とｐ型不純物
またはｎ型不純物のいずれも意図的に導入していない層
３とがそれらの順に積層されている構成を有し、従っ
て、半導体量子井戸構造Ｑが、図３で上述した従来提案
されている半導体量子井戸構造を有する光半導体装置の
場合と同様に、変調ドープ型である。An embodiment of an optical semiconductor device having a semiconductor quantum well structure according to the present invention is an optical semiconductor device having a semiconductor quantum well structure, such as a semiconductor laser, an optical modulator and an optical amplifier, in which the semiconductor quantum well structure is 2 in FIG.
As indicated by the same reference numeral Q as in FIG. 3, the semiconductor barrier layer B and the semiconductor well layer W are separated from each other as in the case of the conventionally proposed optical semiconductor device having the semiconductor quantum well structure described above with reference to FIG. The semiconductor barrier layer B has a structure in which layers are alternately and repeatedly stacked, and the semiconductor barrier layer B has a layer 1 into which neither p-type impurities nor n-type impurities are intentionally introduced, and p-type impurities or n-type impurities are introduced. 3 and a layer 3 in which neither p-type impurities nor n-type impurities are intentionally introduced are laminated in that order, and thus the semiconductor quantum well structure Q has the structure shown in FIG. As in the case of the previously proposed optical semiconductor device having the semiconductor quantum well structure described above, the modulation doping type is used.
【００１７】しかしながら、本発明による半導体量子井
戸構造を有する光半導体装置の実施例は、前述した従来
の半導体量子井戸構造を有する光半導体装置の場合とは
異なり、半導体量子井戸構造Ｑを構成している半導体障
壁層Ｂのｐ型不純物またはｎ型不純物のいずれも意図的
に導入していない層３が、ｐ型不純物またはｎ型不純物
のいずれも意図的に導入していない層１に比し厚い厚さ
を有する。However, the embodiment of the optical semiconductor device having the semiconductor quantum well structure according to the present invention forms the semiconductor quantum well structure Q, unlike the case of the above-described conventional optical semiconductor device having the semiconductor quantum well structure. In the semiconductor barrier layer B, the layer 3 in which neither p-type impurities nor n-type impurities are intentionally introduced is thicker than the layer 1 in which neither p-type impurities nor n-type impurities are intentionally introduced. Have a thickness.
【００１８】以上が、本発明による半導体量子井戸構造
を有する光半導体装置の実施例の構成である。The above is the configuration of the embodiment of the optical semiconductor device having the semiconductor quantum well structure according to the present invention.
【００１９】このような構成を有する本発明による半導
体量子井戸構造を有する光半導体装置によれば、半導体
量子井戸構造Ｑを構成している半導体井戸層Ｗが、前述
した従来の半導体量子井戸構造を有する光半導体装置の
場合と同様に、半導体障壁層Ｂのｐ型不純物またはｎ型
不純物のいずれも意図的に導入していない層３上に形成
されるので、その半導体井戸層Ｗが比較的良好な膜質を
有する。According to the optical semiconductor device having the semiconductor quantum well structure of the present invention having such a structure, the semiconductor well layer W constituting the semiconductor quantum well structure Q has the conventional semiconductor quantum well structure described above. As in the case of the optical semiconductor device having the semiconductor barrier layer B, since the semiconductor barrier layer B is formed on the layer 3 into which neither the p-type impurity nor the n-type impurity is intentionally introduced, the semiconductor well layer W is relatively good. It has excellent film quality.
【００２０】また、本発明による半導体量子井戸構造を
有する光半導体装置の実施例によれば、その半導体量子
井戸構造Ｑを構成している半導体障壁層Ｂのｐ型不純物
またはｎ型不純物のいずれも意図的に導入していない層
３が、ｐ型不純物またはｎ型不純物のいずれも意図的に
導入していない層１に比し厚い厚さを有するので、ｐ型
不純物またはｎ型不純物のいずれも意図的に導入してい
ない層３の、その上にそれと接して形成された半導体井
戸層Ｗが良好な膜質を有するものとして形成されるのに
十分な厚さを、一般に前述したＤM とするとき、ｐ型不
純物またはｎ型不純物のいずれも意図的に導入していな
い層１を、厚さＤM よりも薄い前述した厚さＤD にする
ことができ、このため、半導体障壁層Ｂのｐ型不純物ま
たはｎ型不純物のいずれも意図的に導入していない層３
が、その上にそれと接して形成される半導体井戸層Ｗが
良好な膜質を有するものとして形成されるのに十分な厚
さＤM を有しながら、半導体障壁層Ｂの厚さを、図３に
示す半導体量子井戸構造Ｑを構成している半導体障壁層
Ｂの場合に比し、厚さＤM 及びＤD の差（ＤM −ＤD ）
分薄く形成し得、よって、この（ＤM −ＤD ）分、光半
導体装置としての特性が、図３に示す半導体量子井戸構
造Ｑを有する光半導体装置の場合に比し、良好に得られ
る。Further, according to the embodiment of the optical semiconductor device having the semiconductor quantum well structure according to the present invention, neither the p-type impurity nor the n-type impurity of the semiconductor barrier layer B constituting the semiconductor quantum well structure Q is included. Since the layer 3 not intentionally introduced has a larger thickness than the layer 1 into which neither p-type impurities nor n-type impurities are intentionally introduced, neither p-type impurities nor n-type impurities are included. The thickness of the layer 3 not intentionally introduced, which is sufficient to form the semiconductor well layer W formed on and in contact therewith with a good film quality, is generally referred to as D M described above. At this time, the layer 1 in which neither p-type impurities nor n-type impurities are intentionally introduced can be made to have the above-mentioned thickness D D smaller than the thickness D M , so that the semiconductor barrier layer B No p-type impurities or n-type impurities Re layer 3 which is not intentionally introduced also
But while having a sufficient thickness D M to the semiconductor well layer W formed in contact therewith is formed thereon as having a good film quality, the thickness of the semiconductor barrier layer B, fig. 3 The difference between the thicknesses D M and D D (D M −D D ) of the semiconductor barrier layer B forming the semiconductor quantum well structure Q shown in FIG.
Therefore, the characteristics as an optical semiconductor device can be excellently obtained by the amount (D M −D D ), as compared with the optical semiconductor device having the semiconductor quantum well structure Q shown in FIG. .
【００２１】ちなみに、ＩｎＰでなるｎ型の半導体基板
上に、ＩｎＰでなり且つ０．５μｍの厚さを有するバッ
ファ層を介して、半導体量子井戸構造Ｑが形成され、そ
の半導体量子井戸構造Ｑ上に、ＩｎＰでなり且つ０．１
μｍの厚さを有するキャップ層が形成されている光半導
体装置としての半導体レ―ザにおいて、その半導体量子
井戸構造Ｑに、本実施例を、半導体障壁層Ｂの層１が１
ｎｍの厚さを有する１．２μｍ組成のＩｎＧａＡｓＰ系
でなり、層２がベリリウムをｐ型不純物として２×１０
18ｃｍ-3の濃度で導入し且つ４ｎｍの厚さを有する層１
と同じ組成のＩｎＧａＡｓＰ系でなり、層３が５ｎｍの
厚さを有する層１及び２と同じ組成のＩｎＧａＡｓＰ系
でなり、また、半導体井戸層Ｗが＋１．０％の圧縮歪を
有し且つ４ｎｍの厚さを有するＩｎＧａＡｓ系でなるも
のとし、そして、そのような半導体障壁層Ｂと半導体井
戸層Ｗとが２０回繰り返し積層されているものとして、
適用した。Incidentally, a semiconductor quantum well structure Q is formed on an n-type semiconductor substrate made of InP via a buffer layer made of InP and having a thickness of 0.5 μm. Is InP and is 0.1
In a semiconductor laser as an optical semiconductor device in which a cap layer having a thickness of μm is formed, the semiconductor quantum well structure Q has a semiconductor barrier layer B of which layer 1 is 1
The layer 2 is made of InGaAsP based on 1.2 μm and has a thickness of 2 nm.
Layer 1 introduced at a concentration of 18 cm -3 and having a thickness of 4 nm
Of the same composition as InGaAsP, the layer 3 has a thickness of 5 nm and the same composition of layers 1 and 2 as InGaAsP, and the semiconductor well layer W has a compressive strain of + 1.0% and a thickness of 4 nm. And a semiconductor well layer W such that the semiconductor barrier layer B and the semiconductor well layer W are repeatedly laminated 20 times,
Applied
【００２２】しかるときは、本実施例の適用された光半
導体装置としての半導体レ―ザと同様の半導体レ―ザに
おいて、その半導体量子井戸構造Ｑに、図３に示す半導
体量子井戸構造Ｑを、半導体障壁層Ｂの層１が３ｎｍの
厚さを有する１．２μｍ組成のＩｎＧａＡｓＰ系でな
り、層２がベリリウムをｐ型不純物として２×１０18ｃ
ｍ-3の濃度で導入し且つ４ｎｍの厚さを有する層１と同
じ組成のＩｎＧａＡｓＰ系でなり、層３が３ｎｍの厚さ
を有する層１及び２と同じ組成のＩｎＧａＡｓＰ系でな
り、また、半導体井戸層Ｗが＋１．０％の圧縮歪を有し
且つ４ｎｍの厚さを有するＩｎＧａＡｓ系でなるものと
し、そして、そのような半導体障壁層Ｂと半導体井戸層
Ｗとが２０回繰り返し積層されているものとして、適用
された場合と対比して、ピーク強度で１．５倍、スペク
トル半値幅で０．９倍というＨｅ−Ｎｅレーザ励起によ
るホトルミネセンス測定結果が得られた。Then, in a semiconductor laser similar to the semiconductor laser as the optical semiconductor device to which the present embodiment is applied, the semiconductor quantum well structure Q shown in FIG. The layer 1 of the semiconductor barrier layer B is made of InGaAsP based on 1.2 μm and has a thickness of 3 nm, and the layer 2 is 2 × 10 18 c using beryllium as a p-type impurity.
Introduced at a concentration of m -3 and made of an InGaAsP system having the same composition as the layer 1 having a thickness of 4 nm, the layer 3 being an InGaAsP system having the same composition as the layers 1 and 2 having a thickness of 3 nm, and The semiconductor well layer W is made of InGaAs having a compressive strain of + 1.0% and a thickness of 4 nm, and the semiconductor barrier layer B and the semiconductor well layer W are repeatedly laminated 20 times. In comparison with the case of application, the photoluminescence measurement result by He-Ne laser excitation of 1.5 times in peak intensity and 0.9 times in spectral half width was obtained.
【００２３】また、ＩｎＰでなるｎ型の半導体基板上
に、ＩｎＰでなり且つ０．５μｍの厚さを有するバッフ
ァ層と、１．１μｍ組成のＩｎＧａＡｓＰでなり且つ
０．１μｍの厚さを有するガイド層とがそれらの順に積
層して形成され、そして、そのガイド層上に、半導体量
子井戸構造Ｑが形成され、また、その半導体量子井戸構
造Ｑ上に、１．１μｍ組成のＩｎＧａＡｓＰでなり且つ
０．１μｍの厚さを有するガイド層とＩｎＰでなり且つ
１．５μｍの厚さを有するｐ型のクラッド層と、ＩｎＧ
ａＡｓ系でなり且つ０．３μｍの厚さを有するｐ型のコ
ンタクト層とがそれらの順に積層して形成されている光
半導体装置としての半導体レ―ザにおいて、その半導体
量子井戸構造Ｑに、本実施例を、半導体障壁層Ｂの層１
が１ｎｍの厚さを有する１．１μｍ組成のＩｎＧａＡｓ
Ｐ系でなり、層２がセレンをｎ型不純物として５×１０
18ｃｍ-3の濃度で導入し且つ６ｎｍの厚さを有する層１
と同じ組成のＩｎＧａＡｓＰ系でなり、層３が３ｎｍの
厚さを有する層１及び２と同じ組成のＩｎＧａＡｓＰ系
でなり、また、半導体井戸層Ｗが＋１．０％の圧縮歪を
有し且つ４ｎｍの厚さを有するＩｎＧａＡｓ系でなるも
のとし、そして、そのような半導体障壁層Ｂと半導体井
戸層Ｗとが５回繰り返し積層されているものとして、適
用した。On the n-type semiconductor substrate made of InP, a buffer layer made of InP and having a thickness of 0.5 μm, and a guide layer made of InGaAsP having a 1.1 μm composition and having a thickness of 0.1 μm. And a semiconductor quantum well structure Q is formed on the guide layer, and InGaAsP having a composition of 1.1 μm is formed on the semiconductor quantum well structure Q. A guide layer having a thickness of 1 μm and InP, and a p-type clad layer having a thickness of 1.5 μm;
In a semiconductor laser as an optical semiconductor device in which a p-type contact layer made of aAs and having a thickness of 0.3 μm is laminated in that order, the semiconductor quantum well structure Q has The example is layer 1 of semiconductor barrier layer B.
Having a thickness of 1 nm and having a composition of 1.1 μm
It is made of a P-based material, and the layer 2 is 5 × 10 with selenium as an n-type impurity
Layer 1 introduced at a concentration of 18 cm -3 and having a thickness of 6 nm
Of the same composition as InGaAsP, the layer 3 has a thickness of 3 nm and the same composition of InGaAsP as the layers 1 and 2, and the semiconductor well layer W has a compressive strain of + 1.0% and a thickness of 4 nm. And the semiconductor barrier layer B and the semiconductor well layer W are repeatedly laminated five times.
【００２４】しかるときは、本実施例の適用された光半
導体装置としての半導体レ―ザと同様の半導体レ―ザに
おいて、その半導体量子井戸構造Ｑに、図３に示す半導
体量子井戸構造Ｑを、半導体障壁層Ｂの層１が２ｎｍの
厚さを有する１．１μｍ組成のＩｎＧａＡｓＰ系でな
り、層２がセレンをｎ型不純物として２×１０18ｃｍ-3
の濃度で導入し且つ６ｎｍの厚さを有する層１と同じ組
成のＩｎＧａＡｓＰ系でなり、層３が２ｎｍの厚さを有
する層１及び２と同じ組成のＩｎＧａＡｓＰ系でなり、
また、半導体井戸層Ｗが＋１．０％の圧縮歪を有し且つ
４ｎｍの厚さを有するＩｎＧａＡｓ系でなるものとし、
そして、そのような半導体障壁層Ｂと半導体井戸層Ｗと
が５回繰り返し積層されているものとして、適用された
場合と対比して、パルス発振時におけるしきい値電流密
度が約０．６７という測定結果が得られた。Then, in a semiconductor laser similar to the semiconductor laser as the optical semiconductor device to which this embodiment is applied, the semiconductor quantum well structure Q shown in FIG. The layer 1 of the semiconductor barrier layer B is made of an InGaAsP-based material having a thickness of 2 nm and a composition of 1.1 μm, and the layer 2 is 2 × 10 18 cm −3 with selenium as an n-type impurity.
Of InGaAsP having the same composition as layer 1 having a thickness of 6 nm and having a thickness of 6 nm, and layer 3 having the same composition as layers 1 and 2 having a thickness of 2 nm.
In addition, the semiconductor well layer W is made of InGaAs having a compressive strain of + 1.0% and a thickness of 4 nm.
Assuming that the semiconductor barrier layer B and the semiconductor well layer W are repeatedly laminated five times, the threshold current density at the time of pulse oscillation is about 0.67 as compared with the case where the semiconductor barrier layer B and the semiconductor well layer W are applied. The measurement result was obtained.
【００２５】なお、上述においては、本発明による半導
体量子井戸構造を有する光半導体装置の１つの実施例を
示したに留まり、本発明の精神を脱することなしに種々
の変型、変更をなし得るであろう。In the above description, only one embodiment of the optical semiconductor device having the semiconductor quantum well structure according to the present invention is shown, and various modifications and changes can be made without departing from the spirit of the present invention. Will.
【図１】本発明による半導体量子井戸構造を有する光半
導体装置の実施例における半導体量子井戸構造の実施例
を示す図である。FIG. 1 is a diagram showing an example of a semiconductor quantum well structure in an example of an optical semiconductor device having a semiconductor quantum well structure according to the present invention.
【図２】従来の半導体量子井戸構造を有する光半導体装
置における半導体量子井戸構造の例を示す図である。FIG. 2 is a diagram showing an example of a semiconductor quantum well structure in an optical semiconductor device having a conventional semiconductor quantum well structure.
【図３】従来の半導体量子井戸構造を有する光半導体装
置における半導体量子井戸構造の他の例を示す図であ
る。FIG. 3 is a diagram showing another example of a semiconductor quantum well structure in an optical semiconductor device having a conventional semiconductor quantum well structure.
【符号の説明】 Ｑ 半導体量子井戸構造 Ｂ 半導体障壁層 Ｗ 半導体井戸層 １ 半導体障壁層Ｂのｐ型不純物またはｎ
型不純物のいずれも意図的に導入していない層 ２ 半導体障壁層Ｂのｐ型不純物またはｎ
型不純物を導入している層 ３ 半導体障壁層Ｂのｐ型不純物またはｎ
型不純物のいずれも意図的に導入していない層[Description of Reference Signs] Q semiconductor quantum well structure B semiconductor barrier layer W semiconductor well layer 1 p-type impurity of semiconductor barrier layer B or n
P-type impurities or n of the layer 2 semiconductor barrier layer B into which neither of the type impurities is intentionally introduced
Layer in which a p-type impurity is introduced 3 p-type impurity or n of the semiconductor barrier layer B
Type layer that does not intentionally introduce any type impurities
Claims (1)
次に繰り返し積層されている構成を有する半導体量子井
戸構造を有し、 上記半導体量子井戸構造を構成している上記半導体障壁
層が、ｐ型不純物またはｎ型不純物のいずれも意図的に
導入していない第１の層とｐ型不純物またはｎ型不純物
を導入している第２の層とｐ型不純物またはｎ型不純物
のいずれも意図的に導入していない第３の層とがそれら
の順に積層されている構成を有する光半導体装置におい
て、 上記半導体量子井戸構造を構成している上記半導体障壁
層の上記第３の層が、上記第１の層に比し厚い厚さを有
することを特徴とする半導体量子井戸構造を有する光半
導体装置。1. A semiconductor quantum well structure having a structure in which a semiconductor barrier layer and a semiconductor well layer are alternately and repeatedly laminated, wherein the semiconductor barrier layer forming the semiconductor quantum well structure is p -Type impurity or n-type impurity is intentionally not introduced into the first layer, p-type impurity or n-type impurity is introduced into the second layer, and neither p-type impurity nor n-type impurity is intentionally introduced. In a photosemiconductor device having a configuration in which a third layer not introduced into the above is laminated in that order, the third layer of the semiconductor barrier layer constituting the semiconductor quantum well structure is the third layer. An optical semiconductor device having a semiconductor quantum well structure, which has a thickness thicker than that of the first layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30143394A JP3228453B2 (en) | 1994-11-10 | 1994-11-10 | Optical semiconductor device having semiconductor quantum well structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30143394A JP3228453B2 (en) | 1994-11-10 | 1994-11-10 | Optical semiconductor device having semiconductor quantum well structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08139407A true JPH08139407A (en) | 1996-05-31 |
| JP3228453B2 JP3228453B2 (en) | 2001-11-12 |
Family
ID=17896829
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30143394A Expired - Fee Related JP3228453B2 (en) | 1994-11-10 | 1994-11-10 | Optical semiconductor device having semiconductor quantum well structure |
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| Country | Link |
|---|---|
| JP (1) | JP3228453B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657234B1 (en) | 1999-06-07 | 2003-12-02 | Nichia Corporation | Nitride semiconductor device |
| KR100503939B1 (en) * | 2002-05-17 | 2005-07-26 | 미쓰비시덴키 가부시키가이샤 | Semiconductor laser |
| JP2022101442A (en) * | 2020-12-24 | 2022-07-06 | 日亜化学工業株式会社 | Nitride semiconductor light-emitting element and method for manufacturing the same |
-
1994
- 1994-11-10 JP JP30143394A patent/JP3228453B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657234B1 (en) | 1999-06-07 | 2003-12-02 | Nichia Corporation | Nitride semiconductor device |
| USRE42008E1 (en) | 1999-06-07 | 2010-12-28 | Nichia Corporation | Nitride semiconductor device |
| USRE45672E1 (en) | 1999-06-07 | 2015-09-22 | Nichia Corporation | Nitride semiconductor device |
| USRE46444E1 (en) | 1999-06-07 | 2017-06-20 | Nichia Corporation | Nitride semiconductor device |
| KR100503939B1 (en) * | 2002-05-17 | 2005-07-26 | 미쓰비시덴키 가부시키가이샤 | Semiconductor laser |
| JP2022101442A (en) * | 2020-12-24 | 2022-07-06 | 日亜化学工業株式会社 | Nitride semiconductor light-emitting element and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3228453B2 (en) | 2001-11-12 |
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