KR960032598A - 하향분사가 가능한 소오스 구조를 이용한 이온빔 증착 방법 및 그 장치 - Google Patents

하향분사가 가능한 소오스 구조를 이용한 이온빔 증착 방법 및 그 장치 Download PDF

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Publication number
KR960032598A
KR960032598A KR1019950003547A KR19950003547A KR960032598A KR 960032598 A KR960032598 A KR 960032598A KR 1019950003547 A KR1019950003547 A KR 1019950003547A KR 19950003547 A KR19950003547 A KR 19950003547A KR 960032598 A KR960032598 A KR 960032598A
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KR
South Korea
Prior art keywords
ion beam
downward
crucible
source
deposition method
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KR1019950003547A
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English (en)
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KR0144917B1 (ko
Inventor
이덕형
조만호
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김광호
삼성전자 주식회사
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Priority to KR1019950003547A priority Critical patent/KR0144917B1/ko
Publication of KR960032598A publication Critical patent/KR960032598A/ko
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Publication of KR0144917B1 publication Critical patent/KR0144917B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation

Abstract

하향분사가 가능한 소오스 구조를 이용한 이온빔 증착 방법 및 그 장치에 관하여 개시한다. 본 발면은 이온빔을 이용한 막질의 증착방법에 있어서, 상기 이온빔이 방출되는 도가니는 상단부보다 하단부의 구경이 큰 이중원추형 구조로 그 사이에 증착물질을 위치시킬 수 있고 상단부에 노즐을 구비하며, 상기 도가니의 모양을 따라 필라멘트를 벌어지도록 위치시킴으로써 상기 이온빔을 하향분사방식으로 분사시켜 막질을 형성하다. 본 발명에 의한 소오스 구조를 이용하면 가속에너지를 이용하는 이온빔 증착방법들에 하향분사방식을 적용할 수 있어 장비의 양산 설비화가 용이하다.

Description

하향분사가 가능한 소오스 구조를 이용한 이온빔 증착 방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도A 및 제2B도는 각각 본 발명에 의하여 이온빔 클러스터의 하향 분사가 가능한 도가니의 사시도 및 평면도이다.

Claims (3)

  1. 이온빔을 이용한 막질의 증착방법에 있어서, 상기 이온빔이 방출되는 도가니는 상단부보다 하단부의 구경이 큰 이중 원추형 구조로 그 사이에 증착물질을 위치시킬 수 있고 상단부에 노즐을 구비하며, 상기 도가니의 모양을 따라 필라멘트를 벌어지도록 위치시킴으로써 상기 이온빔을 하향분사방식으로 분사시켜 막질을 형성하는 것을 특징으로 하는 이온빔 증착 방법.
  2. 제1항에 있어서, 상기 이온빔은 이온화된 클러스트빔(ICB)인 것을 특징으로 하는 이온빔 증착 방법.
  3. 이온빔을 이용하여 막질을 형성하는 이온빔 증착장치에 있어서, 상기 이온빔이 하향분사될 수 있도록 상단부보다 하단부의 구경이 큰 이중 원추형 구조로 구성되고 그 사이에 증착물질을 위치시킬 수 있고, 그 상단부에 노즐을 구비하는 도가니와, 상기 도가나의 모양을 따라 벌어지게 위치한 필라멘트를 포함하는 것을 특징으로 하는 이온빔 증착 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950003547A 1995-02-23 1995-02-23 하향분사가 가능한 소오스 구조를 이용한 이온빔 증착방법 및 그 장치 KR0144917B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950003547A KR0144917B1 (ko) 1995-02-23 1995-02-23 하향분사가 가능한 소오스 구조를 이용한 이온빔 증착방법 및 그 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950003547A KR0144917B1 (ko) 1995-02-23 1995-02-23 하향분사가 가능한 소오스 구조를 이용한 이온빔 증착방법 및 그 장치

Publications (2)

Publication Number Publication Date
KR960032598A true KR960032598A (ko) 1996-09-17
KR0144917B1 KR0144917B1 (ko) 1998-08-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100664375B1 (ko) * 2004-12-15 2007-01-02 동부일렉트로닉스 주식회사 이온 주입 장치
KR101532740B1 (ko) * 2014-07-18 2015-06-30 주식회사 선익시스템 증발원 노즐

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100848709B1 (ko) * 2007-03-29 2008-07-28 윤종만 하향식 증발원

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100664375B1 (ko) * 2004-12-15 2007-01-02 동부일렉트로닉스 주식회사 이온 주입 장치
KR101532740B1 (ko) * 2014-07-18 2015-06-30 주식회사 선익시스템 증발원 노즐

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Publication number Publication date
KR0144917B1 (ko) 1998-08-17

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