KR960026307A - 갈륨비소 표면의 경면처리방법 - Google Patents
갈륨비소 표면의 경면처리방법 Download PDFInfo
- Publication number
- KR960026307A KR960026307A KR1019940032652A KR19940032652A KR960026307A KR 960026307 A KR960026307 A KR 960026307A KR 1019940032652 A KR1019940032652 A KR 1019940032652A KR 19940032652 A KR19940032652 A KR 19940032652A KR 960026307 A KR960026307 A KR 960026307A
- Authority
- KR
- South Korea
- Prior art keywords
- surface treatment
- treatment method
- mirror surface
- gallium arsenide
- solution
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract 4
- 238000004381 surface treatment Methods 0.000 title abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 2
- 239000012153 distilled water Substances 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- 238000001035 drying Methods 0.000 claims 1
- 239000011259 mixed solution Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 2
- 239000011593 sulfur Substances 0.000 abstract 2
- 229910052717 sulfur Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BTYUGHWCEFRRRF-UHFFFAOYSA-N [As].[K] Chemical compound [As].[K] BTYUGHWCEFRRRF-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 칼륨비소(GaAs)를 실리콘(Si)과 같이 초고집적도를 갖는 소자의 제작에 응용할 수 있도록 하기 위한 중요한 요소인 표면 경면처리를 행함에 있어 용액을 사용하여 평평한 표면을 유지할 수 있는 방법에 대한 것이다. 식각과 유황에의한 표면처리를 거치는 동안 물과 표면의 화학반응, 유황처리 시간들을 최적화 함으로써 표면이 나노미터급(nanometer-scale)의 평평도를 갖도록 하는 방법을 제안하였다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (2)
- GaAs100 표면을 경면처리하는 방법에 있어서, GaAs100의 표면을 (황산:과산화수소:증류수 = 7:1:1)의 혼합용액으로 식각하는 단계와, 식각된 GaAs100를 즉시 (NH4)2 S X용액속에 넣고 소정의 시간이 경과 후 꺼내는 단계와, 꺼집어낸 GaAs100를 증류수로 헹군 후 건조질소로 건조시키는 단계를 포함하는 것을 특징으로 하는 갈륨비소 표면의 경면처리방법.
- 제1항에 있어서, 식각된 GaAs100를 (NH4)2SX용액속에 넣어두는 시간은 약 20분인 것을 특징으로 하는 갈륨비소 표면의 경면처리방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940032652A KR0139723B1 (ko) | 1994-12-03 | 1994-12-03 | 갈륨비소 표면의 경면처리방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940032652A KR0139723B1 (ko) | 1994-12-03 | 1994-12-03 | 갈륨비소 표면의 경면처리방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960026307A true KR960026307A (ko) | 1996-07-22 |
| KR0139723B1 KR0139723B1 (ko) | 1998-07-15 |
Family
ID=19400212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940032652A KR0139723B1 (ko) | 1994-12-03 | 1994-12-03 | 갈륨비소 표면의 경면처리방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0139723B1 (ko) |
-
1994
- 1994-12-03 KR KR1019940032652A patent/KR0139723B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0139723B1 (ko) | 1998-07-15 |
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| Date | Code | Title | Description |
|---|---|---|---|
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| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030226 Year of fee payment: 6 |
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| LAPS | Lapse due to unpaid annual fee |