KR960026098A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
KR960026098A
KR960026098A KR1019940039044A KR19940039044A KR960026098A KR 960026098 A KR960026098 A KR 960026098A KR 1019940039044 A KR1019940039044 A KR 1019940039044A KR 19940039044 A KR19940039044 A KR 19940039044A KR 960026098 A KR960026098 A KR 960026098A
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South Korea
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semiconductor device
outer box
box
forming
layer
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KR1019940039044A
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Korean (ko)
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KR100278919B1 (en
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배상만
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김주용
현대전자산업 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/5446—Located in scribe lines

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반도체장치 및 그 제조방법에 관한 것으로, 반도체 소자 제조시 광 리소그래피 공정에서 사용되는 마스크 대 마스크 패턴의 중첩도 측정을 위한 오버레이 측정마크를 슬라이브 라인의 유효공간을 넓히기 위하여 박스 형태의 오버레이 측정마크를 인접되도록 다수개 형성하는 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same. An overlay measurement mark for measuring a degree of overlap between a mask and a mask pattern used in an optical lithography process in manufacturing a semiconductor device is used to increase the effective space of a slave line. A plurality of measurement marks are formed adjacent to each other.

Description

반도체 장치 및 그 제조방법Semiconductor device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 본 발명에 의해 오버레이 측정마크 지역에 다수의 오버레이 측정마크를 인접되게 형성한 도면.4 is a view showing a plurality of overlay measurement marks adjacent to the overlay measurement mark area according to the present invention.

Claims (11)

오버레이 측정마크가 형성되는 반도체장치에 있어서, 스크라이브 라인에 일정폭을 갖는 오버레이 측정마크 지역이 길게 형성되고, 상기 측정마크 지역내에 양각으로 구비되는 외측박스와 음각으로 구비되는 외측박스가 인접되고, 양각과 음각이 번갈아가면서 연속적으로 구비되고, 상기의 외측박스내에 내측박스가 각각 구비되어 중첩 정확도를 측정할 수 있도록 하는 것을 특징으로 하는 반도체장치.In a semiconductor device in which an overlay measurement mark is formed, an overlay measurement mark region having a predetermined width is formed in a scribe line, and an outer box provided as an embossment and an outer box provided as an emboss in the measurement mark region are adjacent and embossed. And an intaglio are alternately provided, and an inner box is provided in the outer box so as to measure overlapping accuracy. 제1항에 있어서, 상기 오버레이 측정마크 지역은 폭이 약 70㎛인 것을 특징으로 하는 반도체장치.The semiconductor device of claim 1, wherein the overlay measurement mark region has a width of about 70 μm. 제1항에 있어서, 상기 외측박스는 20×20㎛2의 크기로 형성되는 것을 특징으로 하는 반도체장치.The semiconductor device of claim 1, wherein the outer box has a size of 20 × 20 μm 2 . 제1항에 있어서, 상기 내측박스는 10×10㎛2의 크기로 형성되는 것을 특징으로 하는 반도체장치.The semiconductor device of claim 1, wherein the inner box has a size of 10 × 10 μm 2 . 제1항에 있어서, 상기 내측박스는 예정된 층의 패턴을 형성할때 마다 내측박스가 구비되지 않은 지역의 외측박스에 구비되는 것을 특징으로 하는 반도체장치.The semiconductor device of claim 1, wherein the inner box is provided in an outer box of a region where the inner box is not provided every time a pattern of a predetermined layer is formed. 제1항에 있어서, 상기 오버레이 측정마크 지역이 다이의 시각 모서리부의 스크라이브 라인에 구비되는 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 1, wherein the overlay measurement mark area is provided in a scribe line of a visual edge of a die. 오버레이 측정마크가 구비되는 반도체장치 제조방법에 있어서, 웨이퍼 위에 제1층의 패턴을 형성하는 공정에서 스크라이브 라인에 양각의 외측박스와 음각의 외측박스를 형성하되 양각과 음각의 경계면은 인접되고, 양각과 음각이 번갈아 가면서 연속적으로 외측박스를 형성하는 단계와, 제2층을 도포하고 이 층을 패턴하기 위하여 감광막패턴을 형성하는 공정에서 상기 예정된 외측박스의 내에 내측박스용 제1감광막패턴을 형성하는 단계와, 식각 공정으로 상기 제2층으로 된 제1내측박스를 형성하는 단계와, 상기 제1감광막패턴을 제거하고, 제3층을 도포하는 단계와, 제3층을 패턴하기 위하여 감광막패턴을 형성하는 공정에서 상기 제1내측박스에 인접한 다른 외측박스의 내에 제2내측박스용 감광막패턴을 형성하는 단계와, 식각 공정으로 제2층으로된 제1내측박스를 형성하는 단계를 포함하는 반도체장치 제조방법.In the method of manufacturing a semiconductor device having an overlay measurement mark, in the process of forming a pattern of the first layer on the wafer, an embossed outer box and an embossed outer box are formed on the scribe line, and the embossed and engraved interfaces are adjacent and embossed. Forming a first photoresist pattern for the inner box in the predetermined outer box in a step of forming an outer box successively alternately with the intaglio; and applying a second layer and forming a photoresist pattern to pattern the layer. Forming a first inner box of the second layer by an etching process, removing the first photoresist pattern, applying a third layer, and patterning the third layer. Forming a photoresist pattern for the second inner box in another outer box adjacent to the first inner box in the forming process; A semiconductor device including forming a first inner box method. 제7항에 있어서, 상기 외측박스와 외측박스내에 형성된 내측박스용 제1감광막패턴을 사용하여 중첩 정확도를 측정하는 것을 특징으로 하는 반도체장치 제조방법.The method of manufacturing a semiconductor device according to claim 7, wherein the overlapping accuracy is measured using the first photoresist pattern for the inner box formed in the outer box and the outer box. 제7항에 있어서, 상기 외측박스와 외측박스내에 형성된 내측박스용 제2감광막패턴을 사용하여 중첩 정확도를 측정하는 것을 특징으로 하는 반도체장치 제조방법.The semiconductor device manufacturing method according to claim 7, wherein the overlapping accuracy is measured using the second photosensitive film pattern for the inner box formed in the outer box and the outer box. 제7항에 있어서, 상기 외측박스는 소자분리막을 형성하는 공정에서 형성하는 것을 특징으로 하는 반도체장치 제조방법.The method of claim 7, wherein the outer box is formed in a process of forming an isolation layer. 제7항에 있어서, 상기 제1층으로된 내측박스는 게이트전극을 형성할때 제조하는 것을 특징으로 하는 반도체장치 제조방법.8. The method of claim 7, wherein the inner box of the first layer is manufactured when the gate electrode is formed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940039044A 1994-12-29 1994-12-29 Semiconductor device and manufacturing method thereof KR100278919B1 (en)

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KR1019940039044A KR100278919B1 (en) 1994-12-29 1994-12-29 Semiconductor device and manufacturing method thereof

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KR100278919B1 KR100278919B1 (en) 2001-01-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100345070B1 (en) * 1999-11-03 2002-07-19 주식회사 하이닉스반도체 Method for forming overlay mark to monitor a deformation of poly2 pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100345070B1 (en) * 1999-11-03 2002-07-19 주식회사 하이닉스반도체 Method for forming overlay mark to monitor a deformation of poly2 pattern

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