KR960024788U - 디스크 플레이어의 드라이브 유닛 - Google Patents

디스크 플레이어의 드라이브 유닛

Info

Publication number
KR960024788U
KR960024788U KR2019940038503U KR19940038503U KR960024788U KR 960024788 U KR960024788 U KR 960024788U KR 2019940038503 U KR2019940038503 U KR 2019940038503U KR 19940038503 U KR19940038503 U KR 19940038503U KR 960024788 U KR960024788 U KR 960024788U
Authority
KR
South Korea
Prior art keywords
drive unit
disc player
player
disc
drive
Prior art date
Application number
KR2019940038503U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR2019940038503U priority Critical patent/KR960024788U/ko
Priority to US08/579,913 priority patent/US5608677A/en
Publication of KR960024788U publication Critical patent/KR960024788U/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B17/00—Guiding record carriers not specifically of filamentary or web form, or of supports therefor
    • G11B17/02—Details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B19/00—Driving, starting, stopping record carriers not specifically of filamentary or web form, or of supports therefor; Control thereof; Control of operating function ; Driving both disc and head
    • G11B19/20—Driving; Starting; Stopping; Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B2220/00—Record carriers by type
    • G11B2220/20—Disc-shaped record carriers
    • G11B2220/25—Disc-shaped record carriers characterised in that the disc is based on a specific recording technology
    • G11B2220/2537—Optical discs
    • G11B2220/2545—CDs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
KR2019940038503U 1994-12-29 1994-12-30 디스크 플레이어의 드라이브 유닛 KR960024788U (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR2019940038503U KR960024788U (ko) 1994-12-30 1994-12-30 디스크 플레이어의 드라이브 유닛
US08/579,913 US5608677A (en) 1994-12-29 1995-12-28 Boosting voltage circuit used in active cycle of a semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019940038503U KR960024788U (ko) 1994-12-30 1994-12-30 디스크 플레이어의 드라이브 유닛

Publications (1)

Publication Number Publication Date
KR960024788U true KR960024788U (ko) 1996-07-22

Family

ID=60851250

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019940038503U KR960024788U (ko) 1994-12-29 1994-12-30 디스크 플레이어의 드라이브 유닛

Country Status (2)

Country Link
US (1) US5608677A (ko)
KR (1) KR960024788U (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100264959B1 (ko) * 1997-04-30 2000-10-02 윤종용 반도체 장치의 고전압발생회로
US5801997A (en) * 1997-06-24 1998-09-01 Etron Technology, Inc. Ping-pong boost circuit
EP0915478B1 (en) 1997-11-05 2010-04-28 STMicroelectronics Srl Improved boosting circuit, particularly for a memory device
KR100348221B1 (ko) * 1998-12-30 2002-09-18 주식회사 하이닉스반도체 고전압 발생기
US6064594A (en) * 1999-02-26 2000-05-16 Stmicroelectronics S.R.L. Voltage boosting circuit for generating boosted voltage phases
DE69935919D1 (de) 1999-12-30 2007-06-06 St Microelectronics Srl Spannungserhöher für nichtflüchtige Speicher zum Betrieb im verbrauchsarmen Bereitschaftszustand
KR100425160B1 (ko) * 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
ITMI20021486A1 (it) * 2002-07-05 2004-01-05 St Microelectronics Srl Dispositivo elevatore di tensione e sistema di memoria
US7149132B2 (en) * 2004-09-24 2006-12-12 Ovonyx, Inc. Biasing circuit for use in a non-volatile memory device
KR100771870B1 (ko) * 2006-05-19 2007-11-01 삼성전자주식회사 반도체 메모리장치의 승압전압 검출회로 및 이를 제어하는방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2652694B2 (ja) * 1988-12-28 1997-09-10 三菱電機株式会社 昇圧回路
US5247480A (en) * 1989-05-02 1993-09-21 Kabushiki Kaisha Toshiba Electrically erasable progammable read-only memory with nand cell blocks
JP2568442B2 (ja) * 1989-07-14 1997-01-08 セイコー電子工業株式会社 半導体集積回路装置
JPH07201173A (ja) * 1993-12-28 1995-08-04 Matsushita Electron Corp 半導体装置

Also Published As

Publication number Publication date
US5608677A (en) 1997-03-04

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Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination