KR960017936A - 불소 처리된 실리콘 산화물의 제조 방법 - Google Patents

불소 처리된 실리콘 산화물의 제조 방법 Download PDF

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Publication number
KR960017936A
KR960017936A KR1019950043506A KR19950043506A KR960017936A KR 960017936 A KR960017936 A KR 960017936A KR 1019950043506 A KR1019950043506 A KR 1019950043506A KR 19950043506 A KR19950043506 A KR 19950043506A KR 960017936 A KR960017936 A KR 960017936A
Authority
KR
South Korea
Prior art keywords
fluorine
plasma
silicon fluoride
raw material
chemical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019950043506A
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English (en)
Korean (ko)
Inventor
쿠마 랙스맨 래비
케니쓰 호치버그 아더
앨린 로버츠 데이비드
니콜라스 브라티스 레이몬드
Original Assignee
윌리엄 에프. 마쉬
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 에프. 마쉬, 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 filed Critical 윌리엄 에프. 마쉬
Publication of KR960017936A publication Critical patent/KR960017936A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1019950043506A 1994-11-28 1995-11-24 불소 처리된 실리콘 산화물의 제조 방법 Abandoned KR960017936A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/345,158 1994-11-28
US08/345,158 US5492736A (en) 1994-11-28 1994-11-28 Fluorine doped silicon oxide process

Publications (1)

Publication Number Publication Date
KR960017936A true KR960017936A (ko) 1996-06-17

Family

ID=23353794

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950043506A Abandoned KR960017936A (ko) 1994-11-28 1995-11-24 불소 처리된 실리콘 산화물의 제조 방법

Country Status (7)

Country Link
US (1) US5492736A (https=)
EP (1) EP0713927A1 (https=)
JP (1) JP2790439B2 (https=)
KR (1) KR960017936A (https=)
IL (1) IL116098A0 (https=)
MY (1) MY131704A (https=)
TW (1) TW290734B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326026A (ja) * 1993-04-13 1994-11-25 Applied Materials Inc 半導体装置の薄膜形成方法
US5571571A (en) * 1993-06-16 1996-11-05 Applied Materials, Inc. Method of forming a thin film for a semiconductor device
JPH08167601A (ja) * 1994-12-13 1996-06-25 Sony Corp 半導体装置の製造方法
TW285753B (https=) * 1995-01-04 1996-09-11 Air Prod & Chem
US5702976A (en) * 1995-10-24 1997-12-30 Micron Technology, Inc. Shallow trench isolation using low dielectric constant insulator
US6191026B1 (en) * 1996-01-09 2001-02-20 Applied Materials, Inc. Method for submicron gap filling on a semiconductor substrate
US6042901A (en) * 1996-02-20 2000-03-28 Lam Research Corporation Method for depositing fluorine doped silicon dioxide films
US6083852A (en) * 1997-05-07 2000-07-04 Applied Materials, Inc. Method for applying films using reduced deposition rates
US5902128A (en) 1996-10-17 1999-05-11 Micron Technology, Inc. Process to improve the flow of oxide during field oxidation by fluorine doping
US6030706A (en) * 1996-11-08 2000-02-29 Texas Instruments Incorporated Integrated circuit insulator and method
US5948928A (en) * 1996-12-05 1999-09-07 Advanced Delivery & Chemical Systems, Ltd. Mono, di- and trifluoroacetate substituted silanes
JP3173426B2 (ja) * 1997-06-09 2001-06-04 日本電気株式会社 シリカ絶縁膜の製造方法及び半導体装置の製造方法
US6066569A (en) * 1997-09-30 2000-05-23 Siemens Aktiengesellschaft Dual damascene process for metal layers and organic intermetal layers
US6627532B1 (en) * 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6265779B1 (en) * 1998-08-11 2001-07-24 International Business Machines Corporation Method and material for integration of fuorine-containing low-k dielectrics
US6781212B1 (en) 1998-08-31 2004-08-24 Micron Technology, Inc Selectively doped trench device isolation
US5994778A (en) * 1998-09-18 1999-11-30 Advanced Micro Devices, Inc. Surface treatment of low-k SiOF to prevent metal interaction
US6800571B2 (en) * 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
KR100504431B1 (ko) * 1998-12-31 2005-09-26 주식회사 하이닉스반도체 기상 실리레이션 공정을 이용한 저유전성 박막 형성방법
US6593077B2 (en) * 1999-03-22 2003-07-15 Special Materials Research And Technology, Inc. Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate
US6153261A (en) * 1999-05-28 2000-11-28 Applied Materials, Inc. Dielectric film deposition employing a bistertiarybutylaminesilane precursor
US6799603B1 (en) * 1999-09-20 2004-10-05 Moore Epitaxial, Inc. Gas flow controller system
US6458718B1 (en) * 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
US6521546B1 (en) * 2000-06-14 2003-02-18 Applied Materials, Inc. Method of making a fluoro-organosilicate layer
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
TW561634B (en) * 2001-09-25 2003-11-11 Rohm Co Ltd Method for producing semiconductor device
US20040101632A1 (en) * 2002-11-22 2004-05-27 Applied Materials, Inc. Method for curing low dielectric constant film by electron beam
US7646081B2 (en) 2003-07-08 2010-01-12 Silecs Oy Low-K dielectric material
EP1731480B1 (en) * 2004-03-31 2018-05-23 Kanto Denka Kogyo Co., Ltd. Method for producing f2-containing gas and method for modifying article surface
US7999355B2 (en) * 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
WO2019039083A1 (ja) * 2017-08-22 2019-02-28 Ａｇｃ株式会社 含フッ素化合物、組成物、コーティング液、および含フッ素化合物の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2697315B2 (ja) * 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JP2699695B2 (ja) * 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5268202A (en) * 1992-10-09 1993-12-07 Rensselaer Polytechnic Institute Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene
JPH08148481A (ja) * 1994-11-25 1996-06-07 Matsushita Electric Ind Co Ltd 絶縁薄膜の形成方法

Also Published As

Publication number Publication date
US5492736A (en) 1996-02-20
TW290734B (https=) 1996-11-11
JPH08236521A (ja) 1996-09-13
EP0713927A1 (en) 1996-05-29
IL116098A0 (en) 1996-01-31
JP2790439B2 (ja) 1998-08-27
MY131704A (en) 2007-08-30

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