KR960015482B1 - 리토그라피용 현상액 및 리토그라피 공정 - Google Patents

리토그라피용 현상액 및 리토그라피 공정 Download PDF

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Publication number
KR960015482B1
KR960015482B1 KR1019930001611A KR930001611A KR960015482B1 KR 960015482 B1 KR960015482 B1 KR 960015482B1 KR 1019930001611 A KR1019930001611 A KR 1019930001611A KR 930001611 A KR930001611 A KR 930001611A KR 960015482 B1 KR960015482 B1 KR 960015482B1
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KR
South Korea
Prior art keywords
surfactant
resist
developer
lithography
molecular weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930001611A
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English (en)
Korean (ko)
Other versions
KR930018651A (ko
Inventor
오미타다히로
히사유끼 시마다
시게끼 시모무라
Original Assignee
오미 타다히로
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Publication date
Application filed by 오미 타다히로 filed Critical 오미 타다히로
Publication of KR930018651A publication Critical patent/KR930018651A/ko
Application granted granted Critical
Publication of KR960015482B1 publication Critical patent/KR960015482B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1019930001611A 1992-02-07 1993-02-06 리토그라피용 현상액 및 리토그라피 공정 Expired - Lifetime KR960015482B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP92-57081 1992-02-07
JP5708192 1992-02-07
JP4233080A JPH05303207A (ja) 1992-02-07 1992-08-07 リソグラフィ用現像液及びリソグラフィ工程
JP4233082A JPH05303208A (ja) 1992-02-07 1992-08-07 リソグラフィ用現像液及びリソグラフィ工程
JP92-233080 1992-08-07
JP92-233082 1992-08-07

Publications (2)

Publication Number Publication Date
KR930018651A KR930018651A (ko) 1993-09-22
KR960015482B1 true KR960015482B1 (ko) 1996-11-14

Family

ID=13045534

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930001611A Expired - Lifetime KR960015482B1 (ko) 1992-02-07 1993-02-06 리토그라피용 현상액 및 리토그라피 공정

Country Status (4)

Country Link
JP (2) JPH05303208A (enExample)
KR (1) KR960015482B1 (enExample)
MY (1) MY121957A (enExample)
TW (1) TW259850B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0150146B1 (ko) * 1995-12-20 1998-12-01 김광호 전자사진 현상방식 프린터의 전사전압 자동조절 제어방법
JP4015823B2 (ja) 2001-05-14 2007-11-28 株式会社東芝 アルカリ現像液の製造方法，アルカリ現像液，パターン形成方法，レジスト膜の剥離方法，及び薬液塗布装置
JP5619458B2 (ja) * 2010-03-31 2014-11-05 Hoya株式会社 レジストパターンの形成方法及びモールドの製造方法
JP7357535B2 (ja) * 2019-12-17 2023-10-06 三井化学株式会社 アルキレンオキシド重合体の製造方法
JP7422530B2 (ja) * 2019-12-17 2024-01-26 三井化学株式会社 アルキレンオキシド重合体の曇点測定用溶媒

Also Published As

Publication number Publication date
JPH05303207A (ja) 1993-11-16
MY121957A (en) 2006-03-31
TW259850B (enExample) 1995-10-11
JPH05303208A (ja) 1993-11-16
KR930018651A (ko) 1993-09-22

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