KR960009288A - Method of manufacturing anti-reflection film of nidium: yttrium vanadate (Nd: YVO_4) crystal for second harmonic oscillator - Google Patents

Method of manufacturing anti-reflection film of nidium: yttrium vanadate (Nd: YVO_4) crystal for second harmonic oscillator Download PDF

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Publication number
KR960009288A
KR960009288A KR1019940021643A KR19940021643A KR960009288A KR 960009288 A KR960009288 A KR 960009288A KR 1019940021643 A KR1019940021643 A KR 1019940021643A KR 19940021643 A KR19940021643 A KR 19940021643A KR 960009288 A KR960009288 A KR 960009288A
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South Korea
Prior art keywords
yvo
refractive index
harmonic
crystal
harmonic oscillator
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KR1019940021643A
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Korean (ko)
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KR100287114B1 (en
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박성수
김용훈
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김광호
삼성전자 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • H01S3/0623—Antireflective [AR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Lasers (AREA)

Abstract

본 발명은 제2고조파 발진기용 니오듐:이크륨바나데이트 (Nd:YVO4) 결정의 반사방지막 제조방법에 관한 것이며, 더욱 상세하게는 제2고조파 발진기의 이득매질로 사용되는 Nd:YVO4결정의 양면에 다수의 고굴절율을 가진 ZrO2와 저굴절율을 가진 SiO2를 교재로 반복적층시켜 c축으로 편광된 광이 입사할 때 기본파, 제2고조파 및 반도체 다이오드 파장에 대한 반사방지막을 이루도록 한 것이며, Nd:YVO4결정의 양면에 c축으로 편광된 기본파(1064nm), 고조파(532nb) 및 반도체 레이저의 파장(809nm)에 대하여 반사율이 낮은 7층의 적층 반사방지막을 통과하도록 하므로서 반사에 의한 손실이 줄어 제2고조파의 출력을 증가시킬 수 있는 것이다.The present invention relates to a method of manufacturing an anti-reflection film of a crystal of nidium: yttrium vanadate (Nd: YVO 4 ) for a second harmonic oscillator, and more particularly, to an Nd: YVO 4 crystal used as a gain medium of a second harmonic oscillator. ZrO 2 with high refractive index and SiO 2 with low refractive index are repeatedly laminated on both sides of the textbook to form anti-reflection films for fundamental wave, second harmonic wave and semiconductor diode wavelength when the c-polarized light is incident. It is reflected by passing through seven layers of anti-reflective films with low reflectivity for fundamental wave (1064nm), harmonic wave (532nb), and wavelength (809nm) of semiconductor laser polarized in c axis on both sides of Nd: YVO 4 crystal. It is possible to increase the output of the second harmonic by reducing the loss by.

Description

제2고조파 발진기용 니오듐:이트륨바나데이트(Nd:YVO4) 결정의 반사방지막 제조 방법Method for manufacturing anti-reflection film of nidium: yttrium vanadate (Nd: YVO4) crystal for second harmonic oscillator

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 광학코팅 디자인을 나타내는 도표이다.1 is a diagram showing the optical coating design of the present invention.

Claims (4)

제2고조파 발진기의 이득매질로 사용되는 Nd:YVO4결정의 양면에 다수의 고굴절율을 가진 ZrO2와 저굴절율을 가진 SiO2를 교대로 반복적층시켜 c측으로 편광된 광이 입시할 때 기본파, 제2고조파 및 반도체 다이오드 파장에 대한 반사방지막을 이루도록 한 것을 특징으로 하는 제2고조파 발진기용 니오듐:이트륨바나데이트(Nd:YVO4) 결정의 반사방지막 제조방법.When the polarized light enters the c-side by alternately repeatedly stacking ZrO 2 with high refractive index and SiO 2 with low refractive index on both sides of the Nd: YVO 4 crystal used as the gain medium of the second harmonic oscillator And an anti-reflection film for the second harmonic and semiconductor diode wavelength, wherein the anti-reflective film for the second harmonic oscillator is made of nidium: yttrium vanadate (Nd: YVO 4 ) crystals. 제1항에 있어서, 상기 반사방지막의 고굴절율층은 532nm에서 약2.2의 굴절율을 갖는 ZrO2를 적층하고 저굴절율층은 약 1.48의 굴절율을 갖는 SiO2를 적층시킨 것을 특징으로 하는 제2고조파 발진기용 니오듐:이트륨바나데이트 (Nd:YVO4) 결정의 반사방지막 제조방법.The second harmonic oscillator according to claim 1, wherein the high refractive index layer of the antireflection film is laminated with ZrO 2 having a refractive index of about 2.2 at 532 nm, and the SiO 2 having a refractive index of about 1.48 is laminated at the low refractive index layer. Method for producing an anti-reflection film of nidium: yttrium vanadate (Nd: YVO 4 ) crystals. 제1항에 있어서, 상기 반사방지막이 기본피에 대해서는 반사율이 0.1%이하가 되고 제2고조파 및 반도체 다이오드 파장에 대해서는 90%이상이 투과되도록 형성된 것을 특징으로 하는 제2고조파 발진기용 니오듐:이트륨바나데니트 (Nd:YVO4) 결정의 반사방지막 제조방법.The method of claim 1, wherein the anti-reflective film is formed so that the reflectance is 0.1% or less for the fundamental skin and 90% or more for the second harmonic and the semiconductor diode wavelength is transmitted. Method for preparing an antireflection film of vanadate (Nd: YVO 4 ) crystals. 제1항에 있어서, 상기 방사방지막이 SiO2와 ZrO2를 7층으로 적층시키고, 각층의 광학적 두께가 설계중심 파장이 550nm에서 KTP/0.06597SiO2, 0.2024ZrO2, 0.05783SiO2, 0.3403ZrO2, 0.15594SiO2, 0.09075ZrO2, 0.38643SiO2/Air로 제조시키는 것을 특징으로 하는 제2고조파 발진기용 니오듐:이트륨바나데이트 (Nd:YVO4) 결정의 반사방지막 제조방법.Claim 1, wherein the film is laminated and the SiO2 and ZrO2 as 7 layers, the optical thickness of each layer in the design center wavelength of KTP 550nm / 0.06597SiO 2, 0.2024ZrO 2, 0.05783SiO 2, 0.3403ZrO 2, 0.15594 in SiO 2, 0.09075ZrO 2, 0.38643SiO 2 / for the second harmonic oscillator, comprising a step of producing a rhodium Air NO: yttrium vanadate (Nd: YVO 4) anti-reflection film production method of the crystal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940021643A 1994-08-30 1994-08-30 METHOD FOR PREPARING Nd:YVO4 CRYSTALLINE ANTIREFLECTION FILM FOR SECOND HARMONIC GENERATION KR100287114B1 (en)

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KR1019940021643A KR100287114B1 (en) 1994-08-30 1994-08-30 METHOD FOR PREPARING Nd:YVO4 CRYSTALLINE ANTIREFLECTION FILM FOR SECOND HARMONIC GENERATION

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KR1019940021643A KR100287114B1 (en) 1994-08-30 1994-08-30 METHOD FOR PREPARING Nd:YVO4 CRYSTALLINE ANTIREFLECTION FILM FOR SECOND HARMONIC GENERATION

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KR100287114B1 KR100287114B1 (en) 2001-09-17

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