KR970077854A - Single crystal laser device - Google Patents

Single crystal laser device Download PDF

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Publication number
KR970077854A
KR970077854A KR1019960017876A KR19960017876A KR970077854A KR 970077854 A KR970077854 A KR 970077854A KR 1019960017876 A KR1019960017876 A KR 1019960017876A KR 19960017876 A KR19960017876 A KR 19960017876A KR 970077854 A KR970077854 A KR 970077854A
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KR
South Korea
Prior art keywords
antireflection film
single crystal
laser device
nonlinear
monocrystal
Prior art date
Application number
KR1019960017876A
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Korean (ko)
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KR100397599B1 (en
Inventor
박성수
이성국
김용훈
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960017876A priority Critical patent/KR100397599B1/en
Publication of KR970077854A publication Critical patent/KR970077854A/en
Application granted granted Critical
Publication of KR100397599B1 publication Critical patent/KR100397599B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • H01S3/0623—Antireflective [AR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)

Abstract

본 발명은 그 양면에 반사 방지막이 코팅된 단결정 레이저 소자에 관한 것이다.The present invention relates to a single crystal laser device having antireflection films coated on both sides thereof.

본 발명 단결정 레이저 소자는 그 몸체 양면에 a축으로 편광된 기본파와 반도체 레이저 파장 및 제 2 고조파에 대해 반사가 방지되도록 그들의 상들이 비정질이고 굴절률이 서로 다른 적어도 두 재료가 교대로 적층된 반사 방지막이 형성되어 SHG 레이저의 출력 안정화를 이룰 수 있다.The single crystal laser device according to the present invention is characterized in that an antireflection film in which at least two materials whose phases are amorphous and whose refractive indexes are different are alternately laminated so as to prevent reflection with respect to a fundamental wave polarized on the a axis of the body and a semiconductor laser wavelength and a second harmonic Thereby stabilizing the output of the SHG laser.

Description

단결정 레이저 소자Single crystal laser device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제 5 도는 본 발명에 따른 KTP 온도에 대한 SHG 출력의 그래프이다.5 is a graph of SHG output versus KTP temperature according to the present invention.

Claims (8)

그 몸체 양측에 광 입사면과 출사면이 마련된 몸체를 구비한 비선형 단결정 소자에 있어서 상기 입사면과 출사면에 a축으로 편광된 기본파와 반도체 레이저 파장 및 제 2 고조파에 대해 반사가 방지되도록 굴절률이 서로 다른 적어도 두 비정질의 재료가 교대로 적층된 반사 방지막이 형성되는 것을 특징으로 하는 단결정 레이저 소자에 코팅된 반사 방지막.And a body having a light incident surface and an emission surface provided on both sides of the body, wherein the refractive index of the fundamental wave polarized in the a-axis direction and the wavelength of the semiconductor laser and the second harmonic of the a- Wherein an antireflection film formed by alternately stacking at least two amorphous materials different from each other is formed on the surface of the antireflection film. 제 1 항에 있어서, 상기 비정질의 재료가 SiO2와 ZrO2인 것을 특징으로 하는 단결정 레이저 소자.The single crystal laser device according to claim 1, wherein the amorphous material is SiO 2 and ZrO 2 . 제 1 항에 있어서, 상기 몸체 Nd : YVO4인 것을 특징으로 하는 단결정 레이저 소자.The single crystal laser device according to claim 1, wherein the body is Nd: YVO 4 . 제 1 항에 있어서, 상기 교대로 적층된 반사 방지막이 기본파에 대해 반사율이 0.1% 이하이고 제 2 고조파 및 반도체 레이저 파장에 대해 90% 이상의 투과율을 갖는 것을 특징으로 하는 단결정 레이저 소자.The single crystal laser device according to claim 1, wherein the alternately stacked antireflection film has a reflectance of 0.1% or less with respect to a fundamental wave, and a transmittance of 90% or more with respect to a second harmonic and a semiconductor laser wavelength. 제 1 항에 있어서, 상기 교대로 적층된 층수가 7인 것을 특징으로 하는 비선형 단결정 소자에 코팅된 반사 방지막.The antireflection film coated on a nonlinear monocrystal element according to claim 1, wherein the number of layers alternately stacked is 7. 제 1 항에 있어서, 상기 SiO2의 굴절률이 설계 중심 파장 532nm에서 1.48인 것을 특징으로 하는 비선형 단결정 소자에 코팅된 반사 방지막.The antireflection film coated on a nonlinear monocrystal element according to claim 1, wherein the refractive index of the SiO 2 is 1.48 at a design center wavelength of 532 nm. 제 1 항에 있어서, 상기 ZrO2의 굴절률이 설계 중심 파장 532nm에서 2.2인 것을 특징으로 하는 비선형 단결정 소자에 코팅된 반사 방지막.The antireflection film coated on a nonlinear monocrystal element according to claim 1, wherein the ZrO 2 has a refractive index of 2.2 at a design center wavelength of 532 nm. 제 1 항에 있어서, 상기 반사 방지막의 구조는 Nd : YVO4/ 0.07325L 0.16809H 0.06717L 0.43993H 0.1415L 0.10925H 0.37586L/공기의 광학적 조건 (L은 SiO2층을 H는 ZrO2층) 을 만족하는 것을 특징으로 하는 비선형 단결정 소자에 코팅된 반사 방지막.2. The method according to claim 1, wherein the structure of the antireflection film is selected from the group consisting of Nd: YVO 4 /0.07325L 0.16809H 0.06717L 0.43993H 0.1415L 0.10925H 0.37586L / air optical condition (L is SiO 2 layer and H is ZrO 2 layer) Wherein the antireflection film is coated on the nonlinear monocrystal device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017876A 1996-05-25 1996-05-25 Non-linear single crystalline laser device KR100397599B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017876A KR100397599B1 (en) 1996-05-25 1996-05-25 Non-linear single crystalline laser device

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Application Number Priority Date Filing Date Title
KR1019960017876A KR100397599B1 (en) 1996-05-25 1996-05-25 Non-linear single crystalline laser device

Publications (2)

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KR970077854A true KR970077854A (en) 1997-12-12
KR100397599B1 KR100397599B1 (en) 2003-12-31

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KR102083936B1 (en) * 2018-03-08 2020-03-03 주식회사 이오테크닉스 Frequency conversion system

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