KR950012949A - KTP antireflection film for second harmonic generation (SHG) - Google Patents

KTP antireflection film for second harmonic generation (SHG) Download PDF

Info

Publication number
KR950012949A
KR950012949A KR1019930022660A KR930022660A KR950012949A KR 950012949 A KR950012949 A KR 950012949A KR 1019930022660 A KR1019930022660 A KR 1019930022660A KR 930022660 A KR930022660 A KR 930022660A KR 950012949 A KR950012949 A KR 950012949A
Authority
KR
South Korea
Prior art keywords
ktp
refractive index
antireflection film
harmonic generation
dielectric material
Prior art date
Application number
KR1019930022660A
Other languages
Korean (ko)
Other versions
KR100266539B1 (en
Inventor
김용훈
박성수
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019930022660A priority Critical patent/KR100266539B1/en
Publication of KR950012949A publication Critical patent/KR950012949A/en
Application granted granted Critical
Publication of KR100266539B1 publication Critical patent/KR100266539B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0064—Anti-reflection devices, e.g. optical isolaters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

본 발명은 KTP결정을 공진기형 제2고조파 발생소자에 사용할때 제2고조파 발생 효율을 높이기 위해 KTP소자의 레이저 입출사면에 기본광(1064nm)과 SH광 (532nm)의 두 파장에 대한 반사방지막을 적층시킨 것으로, 좀 더 구체적으로는 상기 KTP결정의 입사면과 출사면에 고굴절율의 ZrO2와 저굴절율의 SiO2를 7층으로 교대로 적층시켜 두파장에 대한 반사율을 0.1% 이하로 개선시킨 KTP 반사방지막에 관한 것이다.The present invention provides an anti-reflection film for two wavelengths of basic light (1064 nm) and SH light (532 nm) on the laser entrance and exit surface of the KTP device to increase the second harmonic generation efficiency when the KTP crystal is used in the resonator type second harmonic generation device. More specifically, the high refractive index ZrO 2 and the low refractive index SiO 2 are alternately laminated in seven layers on the entrance and exit surfaces of the KTP crystal to improve the reflectance of the two wavelengths to 0.1% or less. It relates to a KTP antireflection film.

Description

제2고조파 발생(SHG)용 케이티피(KTP)반사방지막KTP antireflection film for second harmonic generation (SHG)

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 일반적인 공진기형 SHG의 개략적인 구조도이고,1 is a schematic structural diagram of a general resonator type SHG,

제2도는 설계중심파장 1064nm을 갖는 본 발명의 반사방지막의 설계 결과를 도시한 그래프이다.2 is a graph showing the design results of the antireflection film of the present invention having a design center wavelength of 1064 nm.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

11 : 레이저 다이오드 12 : 렌즈11: laser diode 12: lens

13, 13' : 미러(merror) 14 : Nd:YACT 결정13, 13 ': mirror 14: Nd: YACT determination

15 : 브루스터(brewster) 16 : KTP15: Brewster 16: KTP

17 : 빔 스플리터(beam splitter) 18 : 색필터17 beam splitter 18 color filter

19 : 포토 다이오드 20 : 입사면19: photodiode 20: incident surface

21 : 출사면21: exit surface

Claims (4)

제2고조파 발생용 KTP 단결정의 반사방지막에 있어서, 상기 반사방지막이 상기 KTP 단결정이 입사면과 출사면에 고굴절율의 유전체 재료와 저굴절율의 유전체 재료로써 교대로 반복 적층되어 구성됨을 특징으로 하는 제2고조파 발생용 KTP반사방지막.In the antireflection film of the second harmonic generation KTP single crystal, the antireflection film is formed by alternately repeatedly laminating the KTP single crystal with a high refractive index dielectric material and a low refractive index dielectric material on the incidence surface and the exit surface. 2KTP antireflection film for harmonic generation. 제1항에 있어서, 상기 고굴절율 유전체 재료가 약 2.1의 굴절율을 갖는 ZrO2이고, 저굴절율 유전체 재료가 약 1.46의 굴절율을 갖는 SiO2임을 특징으로 하는 제2고조파 발생용 KTP 반사방지막.The second harmonic generating KTP antireflection film according to claim 1, wherein the high refractive index dielectric material is ZrO 2 having a refractive index of about 2.1 and the low refractive index dielectric material is SiO 2 having a refractive index of about 1.46. 제1항에 있어서, 상기 반사방지막이 레이저광의 기본광과 제2고조파 파장에 대해 반사율이 0.1% 이하임을 특징으로 하는 제2고조파 발생용 KTP 반사방지막.The KTP anti-reflection film according to claim 1, wherein the anti-reflection film has a reflectance of 0.1% or less with respect to the fundamental light and the second harmonic wavelength of the laser light. 제1항에 있어서, 상기 반사방지막의 각층의 광학적 두께가 설계중심파장 1064nm에서 KTP/0.063∼0.077L, 0.055∼0.068H, 0.049∼0.060L, 0.128∼0.156H, 0.071∼0.088L, 0.046∼0.054H, 0.180∼0.220L/AIR구성되며, 여기서 L은 SiO2층이고, H는 ZrO2층임을 특징으로 하는 공진기형 SHG용 KTP 반사방지막.The optical thickness of each layer of the anti-reflection film is KTP / 0.063 to 0.077L, 0.055 to 0.068H, 0.049 to 0.060L, 0.128 to 0.156H, 0.071 to 0.088L, 0.046 to 0.054 at the design center wavelength of 1064 nm. H, 0.180 to 0.220L / AIR, wherein L is a SiO 2 layer, H is a ZrO 2 layer KTP anti-reflection film for resonator type SHG. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930022660A 1993-10-28 1993-10-28 Ktp antireflection film for a second harmonic generation KR100266539B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930022660A KR100266539B1 (en) 1993-10-28 1993-10-28 Ktp antireflection film for a second harmonic generation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930022660A KR100266539B1 (en) 1993-10-28 1993-10-28 Ktp antireflection film for a second harmonic generation

Publications (2)

Publication Number Publication Date
KR950012949A true KR950012949A (en) 1995-05-17
KR100266539B1 KR100266539B1 (en) 2000-09-15

Family

ID=19366852

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930022660A KR100266539B1 (en) 1993-10-28 1993-10-28 Ktp antireflection film for a second harmonic generation

Country Status (1)

Country Link
KR (1) KR100266539B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950023991A (en) * 1994-01-31 1995-08-21 김광호 KTP coating film for second harmonic generation (SHG)
KR970071488A (en) * 1996-04-25 1997-11-07 김광호 A method of forming a semi-reflective coating layer on a nonlinear single crystal device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950023991A (en) * 1994-01-31 1995-08-21 김광호 KTP coating film for second harmonic generation (SHG)
KR970071488A (en) * 1996-04-25 1997-11-07 김광호 A method of forming a semi-reflective coating layer on a nonlinear single crystal device

Also Published As

Publication number Publication date
KR100266539B1 (en) 2000-09-15

Similar Documents

Publication Publication Date Title
CN112421364B (en) Intermediate infrared dual-wavelength time domain programmable regulation laser based on Nd-MgO-PPLN crystal
US6707838B2 (en) Stray light cutting structure for optical device
KR950012949A (en) KTP antireflection film for second harmonic generation (SHG)
JP4766775B2 (en) Terahertz light generation device and terahertz light generation method
JPH09246648A (en) Laser beam source and illuminating optical device
KR950012951A (en) Semiconductor laser device
US5741595A (en) Ultraviolet optical part having coat of ultraviolet optical thin film, and wavelength-changing device and ultraviolet light source unit having coat of ultraviolet optical thin film
JP2000231128A (en) Nonlinear optical element, nonlinear optical device using the same and production of nonlinear optical element
KR950023991A (en) KTP coating film for second harmonic generation (SHG)
JP3735975B2 (en) Wavelength conversion element
KR950023992A (en) KTP antireflection film for second harmonic generation (SHG)
JPH05341334A (en) Wavelength conversion device
JP2764440B2 (en) Anamorphic prism
KR970077854A (en) Single crystal laser device
JP2502615Y2 (en) Wavelength conversion element
KR960029872A (en) Resonator of the center wavelength 1024nm mirror and the second harmonic generator using the same
JPH10270780A (en) Beam splitter
JP2999743B2 (en) Fabry-Perot microcavity optical switch
KR960009288A (en) Method of manufacturing anti-reflection film of nidium: yttrium vanadate (Nd: YVO_4) crystal for second harmonic oscillator
JPH05341343A (en) Optical wavelength converting element
JPS63136589A (en) Semiconductor laser device
JPH061317B2 (en) Optical parametric oscillator
JPH05173216A (en) Solid state laser element having two-wavelength reflection reducing film and second harmonic generating device using the same
Gindre et al. Lifetime measurement of polarization gratings in polymer thin films by spectral analysis of the distributed feedback laser emission
JPH0757290A (en) Optical wavelength conversion element

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080312

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee