KR960009287A - Niodium for second harmonic oscillator: Anti-reflection film of yttrium aluminum garnet (Nd: YAG) crystal - Google Patents

Niodium for second harmonic oscillator: Anti-reflection film of yttrium aluminum garnet (Nd: YAG) crystal Download PDF

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Publication number
KR960009287A
KR960009287A KR1019940021454A KR19940021454A KR960009287A KR 960009287 A KR960009287 A KR 960009287A KR 1019940021454 A KR1019940021454 A KR 1019940021454A KR 19940021454 A KR19940021454 A KR 19940021454A KR 960009287 A KR960009287 A KR 960009287A
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South Korea
Prior art keywords
harmonic oscillator
crystal
reflection film
yag
harmonic
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KR1019940021454A
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Korean (ko)
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KR100287112B1 (en
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김용훈
박성수
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김광호
삼성전자 주식회사
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Priority to KR1019940021454A priority Critical patent/KR100287112B1/en
Publication of KR960009287A publication Critical patent/KR960009287A/en
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Publication of KR100287112B1 publication Critical patent/KR100287112B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • H01S3/0623—Antireflective [AR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet
    • H01S3/1643—YAG

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

본 발명은 제2고조파 발진기용 니오듐:이트륨 알루미늄 가네트(Nd:YAG) 결정의 반사방지막에 관한 것으로, 좀 더 상세하게는 기본파에 대해서는 무반사율을 가지며 반도체 다이오드 파장 및 제2고조파에 대해서는 고튜과율을 갖도록 제2고조파 발진기의 이들매질용 Nd:YVO4결정의 양면에 굴절율이 1.36∼1.39인 MgF2를 형성시키므로써 반도체 다이오드에서 조사하는 빔의 손실을 최소화시켜 결정내에서 여기후 최대출력을 얻도록 할 수 있는 제2고조파 발진기용 Nd:YAG 결정의 반사방지막에 관한 것이다.The present invention relates to an anti-reflective film of a crystal of a neodymium: yttrium aluminum garnet (Nd: YAG) crystal for a second harmonic oscillator. MgF 2 with a refractive index of 1.36 to 1.39 is formed on both sides of the Nd: YVO 4 crystals for these media of the second harmonic oscillator so as to have an excess rate. The present invention relates to an anti-reflection film of Nd: YAG crystals for a second harmonic oscillator that can be obtained.

Description

제2고조파 발진기용 니오듐:이트륨 알루미늄 가네트(Nd:YAG) 결정의 반사방지막Anti-reflection film of nidium: yttrium aluminum garnet (Nd: YAG) crystal for second harmonic oscillator

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 내부 공진기형 제2고조파 발생장치의 개략도이고,1 is a schematic diagram of an internal resonator type second harmonic generator,

제2도는 본 발명에서 사용한 코팅장치의 개략도이며,2 is a schematic view of the coating apparatus used in the present invention,

제3도는 본 발명에 따른 광학코팅 디자인이다.3 is an optical coating design according to the present invention.

Claims (3)

기본파에 대해서는 무반사율을 가지며 반도체 다이오드 파장 및 제2고조파에 대해서는 고투과율을 갖도록 제2고조파 발진기의 이득매질용 Nd:YVO4결정의 양면에 굴절율이 1.36∼1.39인 MgF2를 형성시켜서 된 것을 특징으로 하는 제2고조파 발진기용 Nd:YAG 결정의 반사방지막.MgF 2 with a refractive index of 1.36 to 1.39 is formed on both sides of the Nd: YVO 4 crystal for gain medium of the second harmonic oscillator to have antireflection for the fundamental wave and high transmittance for the semiconductor diode wavelength and the second harmonic. An anti-reflection film of Nd: YAG crystal for second harmonic oscillator. 제1항에 있어서, 상기 반사방지막의 설계중심파장인 1064nm에서의 광학적 두께가 λ/4의 n배(n=1,3,5…)인 것을 특징으로 하는 제2고조파 발진기용 Nd:YAG 결정의 반사방지막.The Nd: YAG crystal for the second harmonic oscillator according to claim 1, wherein the optical thickness at 1064 nm, which is the design center wavelength of the antireflection film, is n times (λ = 1, 3, 5, ...) of lambda / 4. Antireflection film. 제1항에 있어서, 상기 반사방지막이 기본파에 대한 반사율이 0.1%이하, 제2고조파 및 반도체 다이오드 파장에 대한 투과율이 90%이상인 것을 특징으로 하는 제2고조파 발진기용 Nd:YAG 결정의 반사방지막.The anti-reflection film of Nd: YAG crystal for the second harmonic oscillator according to claim 1, wherein the anti-reflection film has a reflectance of 0.1% or less for the fundamental wave and a transmittance of 90% or more for the second harmonic and the semiconductor diode wavelength. . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940021454A 1994-08-29 1994-08-29 Nd:yag crystalline antireflection film for second harmonic generation KR100287112B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940021454A KR100287112B1 (en) 1994-08-29 1994-08-29 Nd:yag crystalline antireflection film for second harmonic generation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940021454A KR100287112B1 (en) 1994-08-29 1994-08-29 Nd:yag crystalline antireflection film for second harmonic generation

Publications (2)

Publication Number Publication Date
KR960009287A true KR960009287A (en) 1996-03-22
KR100287112B1 KR100287112B1 (en) 2001-09-17

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