KR960006959B1 - Mask plate for photoetching process - Google Patents
Mask plate for photoetching process Download PDFInfo
- Publication number
- KR960006959B1 KR960006959B1 KR1019920005536A KR920005536A KR960006959B1 KR 960006959 B1 KR960006959 B1 KR 960006959B1 KR 1019920005536 A KR1019920005536 A KR 1019920005536A KR 920005536 A KR920005536 A KR 920005536A KR 960006959 B1 KR960006959 B1 KR 960006959B1
- Authority
- KR
- South Korea
- Prior art keywords
- lead frame
- light
- etching
- disc
- paddle
- Prior art date
Links
- 238000001259 photo etching Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title description 6
- 238000005530 etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
제 1 도는 종래 포토에칭용 원판을 나타낸 평면도.1 is a plan view showing a conventional disc for photoetching.
제 2 도는 종래 포토에칭용 원판을 이용하여 편면 식각처리된 리드프레임의 단면도.2 is a cross-sectional view of a lead frame subjected to a single-sided etching process using a conventional photoetching disc.
제 3 도는 본 발명에 따른 포토에칭용 원판을 나타낸 것으로서 a는 평면도 b는 일부발췌 확대도.Figure 3 shows a disc for photoetching according to the present invention, a is a plan view b is a partial enlarged view.
제 4 도는 본 발명에 따른 포토에칭용 원판을 이용하여 편면 식각처리된 리드프레임의 개략적 단면도.4 is a schematic cross-sectional view of a lead frame subjected to a single-sided etching process using a photoetching disc according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 포토에칭용 원판 11 : 몸체10: original plate for photo etching 11: body
11a,11a' : 투광부 11b,11b' : 차광부11a, 11a ': Light transmitting part 11b, 11b': Light blocking part
12 : 편면 식각처리부 20 : 리드프레임12: single-sided etching processing unit 20: lead frame
본 발명은 포토에칭용 원판에 관한 것으로서 더욱 상세하게는 반도체 제조용 리드프레임을 제조하기 위한 포토에칭용 원판에 관한 것이다.The present invention relates to a disc for photoetching, and more particularly, to a disc for photoetching for producing a lead frame for semiconductor manufacturing.
일반적으로 반도체 제조용 리드프레임의 제조는 가시광선, 적외선 또는 자외선에 반응하는 감광막이 형성된 소재의 상면에 제조하고자 하는 리드프레임의 형상과 동일한 투광부와 투광부 이외의 부분이 차광부로 이루어진 원판을 형성한다. 그리고 상기 마스크의 상면으로 부터 가시광선 또는 적외선을 감광시킨 후 감광되지 않은 코팅막을 제거시키고 이를 소정의 화학약품에 부식시켜 리드프레임을 형성하게 된다. 이와같이 형성되는 리드프레임에 있어 특히 반도체 칩(chip)이 탑재되는 패들(paddle) 뒷면을 편면식각함에 있어서는 제 1 도에 나타낸 바와같이 이 편면식각 부분과 대응되는 포토에칭용 원판(1)에는 연속된 차광부(2)가 형성된다.In general, in the manufacture of a lead frame for semiconductor manufacturing, a light transmitting part having the same shape as the shape of the lead frame to be manufactured and a portion other than the light transmitting part are formed on the upper surface of the material on which the photosensitive film reacting with visible light, infrared light or ultraviolet light is formed of a light blocking part. . And after the visible light or infrared light from the upper surface of the mask to remove the unsensitized coating film and to corrode it to a predetermined chemical to form a lead frame. In the lead frame formed as described above, particularly in single-sided etching of the back of the paddle on which the semiconductor chip is mounted, as shown in FIG. 1, the photo-etching master 1 corresponding to this single-sided etching portion is continuous. The light shielding portion 2 is formed.
이와같은 상태에서 가시광선 또는 적외선을 감광시킨 후 이에 의해 감광된 소재 즉, 제 2 도에 나타낸 바와같이 리드프레임(3)을 소정의 화학약품에 의해 감광제(4)가 제거된 부분 즉 피식각면(3a)을 편면식각 처리하는 것이다.In this state, the photosensitive material is exposed to the visible light or infrared light, and thus the photosensitive material, that is, the portion of the lead frame 3 from which the photosensitive agent 4 is removed by a predetermined chemical, as shown in FIG. One side etch of 3a).
그러나 상기와 같이 편면식각 처리한 리드프레임(3)의 편면식각 처리한 부분 즉 반도체 칩이 놓이는 패들(3b)의 깊이가 소재 두께의 50∼90%까지 깊게 형성된다는 문제점이 있었다. 이에 의해서는 리드프레임의 쉽게 변형되고 또한 반도체 제조공정 중 패키지(package) 공정에서 몰딩물이 편면식각된 깊이까지 완전히 들어가지 않음에 따라 반도체 패키지 깨어짐이 발생되고 몰딩물과 리드프레임과의 접착력이 떨어져 결국 제품의 신뢰성이 저하된다는 문제점이 있었다.However, there has been a problem that the depth of the one-sided etched part of the one-sided etched lead frame 3, that is, the paddle 3b on which the semiconductor chip is placed, is deeply formed to 50 to 90% of the thickness of the material. As a result, the lead frame is easily deformed, and in the packaging process during the semiconductor manufacturing process, the molded product does not fully enter the etched depth, thereby causing the semiconductor package to break, and the adhesion between the molding and the lead frame is reduced. As a result, there was a problem that the reliability of the product is lowered.
본 발명은 상기와 같은 종래 문제점을 해결하기 위하여 창출된 것으로서, 리드프레임을 편면식각 처리함에 있어 편면식각 처리되는 부분의 깊이를 얇게 형성하여 몰딩물과 리드프레임의 접착력을 향상시킬 수 있도록 된 포토에칭용 원판을 제공함에 그 목적이 있다.The present invention was created in order to solve the conventional problems as described above, the photo-etching to improve the adhesion between the molding and the lead frame by forming a thin depth of the portion to be subjected to one side etching treatment in the one side etching process of the lead frame The purpose is to provide a working disc.
상기 목적을 달성하기 위하여 본 발명은 판상의 몸체에 패들과 복수의 인너리드를 가지는 리드프레임의 형상과 동일 패턴을 갖도록 투광부와 차광부가 소정의 패턴으로 형성된 포토에칭용 마스크에 있어서, 상기 리드프레임의 편면 식각되는 부위와 대응되는 상기 포토에칭용 마스크의 편면식각 부분에 투광부와 차광부를 단속적으로 형성하여 된 것을 그 특징으로 한다.In order to achieve the above object, the present invention provides a mask for photoetching in which a light transmitting portion and a light blocking portion are formed in a predetermined pattern so as to have the same pattern as a shape of a lead frame having a paddle and a plurality of inner leads in a plate-shaped body, wherein the lead frame It characterized in that the light-transmitting portion and the light shielding portion is formed intermittently in the one-side etching portion of the photo-etching mask corresponding to the one-side etching portion of the.
이와 같은 본 발명은 리드프레임의 편면식각 처리되는 부분의 깊이가 얕아 몰딩물과 리드프레임의 접착력을 향상시킨 것이다.As such, the present invention improves the adhesion between the molding and the lead frame because the depth of the one-side etching process of the lead frame is shallow.
이하 본 발명에 따른 포토에칭용 원판의 바람직한 일 실시예를 첨부된 도면을 참조하여 상세히 설명한다. 제 3 도에 나타낸 바와같이 본 발명에 따른 리드프레임을 제조하기 위한 포토에칭용 원판(10)은, 패들(paddle)과 인너리드(inner lead) 및 익스터널 리드(external lead)를 가지는 리드프레임의 형성과 동일 패턴을 가지는 투광부(11a)가 판상의 몸체(11)에 형성되고, 상기 투광부(11a)를 제외한 부분에는 차광부(11b)가 형성된다.Hereinafter, with reference to the accompanying drawings, a preferred embodiment of the disc for photoetching according to the present invention will be described in detail. As shown in FIG. 3, the disc 10 for photo-etching for manufacturing a lead frame according to the present invention includes a lead frame having a paddle, an inner lead, and an external lead. A light transmitting portion 11a having the same pattern as that of formation is formed in the plate-shaped body 11, and a light blocking portion 11b is formed at a portion other than the light transmitting portion 11a.
한편 상기 리드프레임의 패들 부위는 소정의 화학약품에 의해 편면식각 처리하는바, 이와 대응되는 상기 포토에칭용 원판(10)의 상면에는 제 3 도b에 나타낸 바와같이 본 발명의 특징에 따라 투광부(11a')와 차광부(11b')가 단속적으로 형성된 편면식각 처리부(12)가 형성된다. 이와같이 구성된 본 발명에 따른 포토에칭용 원판의 작용을 설명하면, 리드프레임을 제조하기 위해서는 감광막이 코팅된 리드프레임 소재와 포토에칭용 원판(10)를 결합한 후 이에 빛을 조사하여 원판(10)의 투광막을 통과한 빛에 의해 감광막이 리드프레임의 형상으로 감광 되도록 한다.On the other hand, the paddle portion of the lead frame is subjected to one-sided etching with a predetermined chemical, the light emitting portion according to the characteristics of the present invention as shown in Figure 3b the upper surface of the disc for photoetching 10 corresponding thereto The single-sided etching processing part 12 in which 11a 'and the light shielding part 11b' are formed intermittently is formed. Referring to the operation of the photo-etching disc according to the present invention configured as described above, in order to manufacture the lead frame is combined with the photosensitive film-coated lead frame material and the photo-etching disc 10 and then irradiated with light of the disc 10 The photosensitive film is exposed to the shape of the lead frame by the light passing through the light transmitting film.
그리고 상기 리드프레임 소재의 감광막을 형상하여 소정의 패턴을 갖도록 한다. 이때, 상기 리드프레임 소재의 패들부는 편면식각 처리하는바, 상기 리드프레임 소재의 패들에는 단속적으로 감광막이 제공된 부위 즉, 피식각 처리부분과 감광막이 제공되지 않은 부위를 갖게된다.The photosensitive film of the lead frame material is shaped to have a predetermined pattern. In this case, the paddle portion of the lead frame material is subjected to one-side etching, and the paddle of the lead frame material has a portion intermittently provided with a photoresist film, that is, an etched portion and a portion where the photoresist film is not provided.
이와같은 상태에서 상기 리드프레임 소재를 화학 약품에 의해 편면식각처리하게 되면 제 4 도에 나타낸 바와같이 리드프레임(20)은 얇은 두께로 편면식각 처리되는 것이다.In this state, when the lead frame material is etched with chemicals, the lead frame 20 is etched with a thin thickness as shown in FIG. 4.
즉, 감광막이 제거된 부위와 제거되지 않은 부위가 단속적으로 배열되어 있기 때문에 화학약품에 의해 편면식각시 감광막이 제거되지 않은 부위에 의해 저항을 갖게 됨으로써 얇은 편면식각이 가능한 것이다.That is, since the portion where the photoresist film is removed and the portion that is not removed are intermittently arranged, a single side etching is possible by having a resistance by the portion where the photoresist film is not removed during chemical etching.
상술한 바와같이 본 발명에 따른 포토에칭용 원판에 의하면, 리드프레임 소재의 편면식각 부분의 길이를 얇게 함에 따라 리드프레임의 변형을 방지할 수 있으며, 반도체 제조공정중 패키지 공저에서의 패키지 깨어짐 불량을 감소시키고, 몰딩몰과 리드프레임의 접착력이 증가되어 제품의 신뢰성이 향상된다는 이점이 있다.As described above, the disc for photoetching according to the present invention can prevent deformation of the leadframe by reducing the length of one-sided etched portion of the leadframe material and prevents package breakage in the package process during the semiconductor manufacturing process. Reduced, and the adhesion of the molding mould and the lead frame is increased to improve the reliability of the product.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920005536A KR960006959B1 (en) | 1992-04-02 | 1992-04-02 | Mask plate for photoetching process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920005536A KR960006959B1 (en) | 1992-04-02 | 1992-04-02 | Mask plate for photoetching process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930022486A KR930022486A (en) | 1993-11-24 |
| KR960006959B1 true KR960006959B1 (en) | 1996-05-25 |
Family
ID=19331315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920005536A KR960006959B1 (en) | 1992-04-02 | 1992-04-02 | Mask plate for photoetching process |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960006959B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020006369A (en) * | 2000-07-12 | 2002-01-19 | 김광교 | Method and chemicals recover system |
-
1992
- 1992-04-02 KR KR1019920005536A patent/KR960006959B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930022486A (en) | 1993-11-24 |
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