KR0121882Y1 - Photoetching disk for a lead frame manufacturing - Google Patents
Photoetching disk for a lead frame manufacturingInfo
- Publication number
- KR0121882Y1 KR0121882Y1 KR92019070U KR920019070U KR0121882Y1 KR 0121882 Y1 KR0121882 Y1 KR 0121882Y1 KR 92019070 U KR92019070 U KR 92019070U KR 920019070 U KR920019070 U KR 920019070U KR 0121882 Y1 KR0121882 Y1 KR 0121882Y1
- Authority
- KR
- South Korea
- Prior art keywords
- lead frame
- dimple
- light
- forming
- pad
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
본 고안은 반도체 집적회로용 리드프레임을 제조하는 데 있어서, 리드프레임 중앙에 위치하는 패드부 딤플의 깊이를 리드프레임 소재 두께의 3/5 이하가 되도록 함으로써, 딤플이 과다한 깊이로 에칭될 경우에 열팽창 상태에서 발생하는 패드부의 변형과 칩의 파괴를 방지하는 것으로, 다수의 딤플형성용 차광부를 포함하는 투광부로 되는 패드형성부와, 상기 패드형성부에 대하여 방사형으로 투광 및 차광부를 가지는 리드형성부로 구성된 것에 있어서, 상기 딤플형성용 차광부 내에 에칭저해용 투광부를 형성함을 특징으로 하는 리드프레임 제조용 포토에칭원판.The present invention is to manufacture a lead frame for a semiconductor integrated circuit, by making the depth of the pad portion dimple located at the center of the lead frame to 3/5 or less of the thickness of the lead frame material, thermal expansion when the dimple is etched to an excessive depth A pad forming portion that is a light transmitting portion including a plurality of dimple forming light blocking portions, and a lead forming portion having a light transmitting and shielding portion radially with respect to the pad forming portion, to prevent deformation of the pad portion and chip breakage occurring in a state. The photoetching disc for manufacturing a lead frame according to claim 1, wherein an etching inhibiting light transmitting portion is formed in the dimple forming light shielding portion.
Description
제1도는 일반적인 리드프레임 제조 공정을 설명하기 위한 단면도.1 is a cross-sectional view for explaining a general lead frame manufacturing process.
제2도는 종래 리드프레임 제조용 포토에칭원판을 나타낸 평면도.Figure 2 is a plan view showing a photoetching disc for a conventional lead frame manufacturing.
제3도는 패드를 나타낸 리드프레임 구조도.3 is a leadframe structure diagram showing a pad.
제4도의 (a)는 종래 리드프레임 제조용 포토에칭원판의 딤플형성용 차광부를 나타낸 평면도.Figure 4 (a) is a plan view showing a light blocking portion for forming dimples of the photo-etching disc for conventional lead frame manufacturing.
(b)는 (a)에 의한 리드프레임의 부식상태 단면도.(b) is a sectional view of the corrosion state of the lead frame according to (a).
(c)는 (a)에 의해 형성된 딤플을 나타낸 단면도.(c) is sectional drawing which showed the dimple formed by (a).
제5도의 (a)는 본 고안 리드프레임 제조용 포토에칭원판의 딤플형성용 차광부를 나타낸 평면도.Figure 5 (a) is a plan view showing a light shielding portion for dimple formation of the photoetching disc for manufacturing the lead frame of the present invention.
(b)는 (a)에 의한 리드프레임의 부식상태 단면도.(b) is a sectional view of the corrosion state of the lead frame according to (a).
(c)는 (a)에 의해 형성된 딤플을 나타낸 단면도.(c) is sectional drawing which showed the dimple formed by (a).
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
100:리드프레임 소재, 130a:딤플100: lead frame material, 130a: dimple
200:감광막 210:에칭저해부200: photosensitive film 210: etching etching anatomy
330:패드형성부 331:딤플형성용 차광부330: pad forming portion 331: dimple forming shading
332:에칭저해용 투광부332: an anti-etching floodlight
본 고안은 반도체 집적회로용 리드프레임을 제조하기 위한 것으로, 리드프레임 중앙에 위치하는 패드(Pad)부의 딤플(Dimple)이 과다한 깊이로 에칭되는 것을 방지하는 리드프레임 제조용 포토에칭원판에 관한 것이다.The present invention is for manufacturing a lead frame for a semiconductor integrated circuit, and relates to a photoetching disc for lead frame manufacturing to prevent the dimple of the pad portion located in the center of the lead frame to be etched to an excessive depth.
일반적인 리드프레임 제조 공정은 제1도에 도시되는 바와같이, 리드프레임 소재(10)의 양면에 감광막(20)을 도포하는 공정과, 감광막(20) 위에 포토에칭원판(30)을 밀착시키는 공정과, 포토에칭원판(30) 위에 빛을 조사하여 포토에칭원판(30)의 차광부(31)와 접해있는 차광측 감광막(21)은 원상태를 유지시키는 반면, 투광부(32)에 접해있는 투광측 감광막(22)은 빛을 받아 굳어지게 하는 공정과, 이후 포토에칭원판(30)의 차광부(31)에 의해 굳어지지 않고 원상태로 남아 있는 차광측 감광막(21)을 소정의 현상액을 제거하는 공정과, 이 차광측 감광막(21)이 제거된 부위를 에칭액으로 부식시키는 공정을 구비하여 리드프레임을 제조하였다.A general lead frame manufacturing process is a process of applying the photosensitive film 20 to both sides of the lead frame material 10, as shown in Figure 1, the process of contacting the photo-etching disc 30 on the photosensitive film 20 and The light-side photosensitive film 21 in contact with the light-shielding portion 31 of the photo-etching original plate 30 by irradiating light onto the photo-etching original plate 30 maintains its original state, while the light-transmitting side that is in contact with the light-transmitting portion 32. The photoresist film 22 is a process of hardening by receiving light, and then removing a predetermined developer from the light shielding-side photoresist film 21 which is not hardened by the light shielding portion 31 of the photoetching original plate 30 and remains in its original state. And a step of corroding the portion from which the light shielding-side photosensitive film 21 has been removed with an etching solution to manufacture a lead frame.
제3도는 패드를 나타낸 리드프레임의 구조도로서, 이와같은 패드(13)에 딤플(13a)이 형성되는 리드프레임에서 A부와 같이 빗금친 부분은 포토에칭원판의 투광부에 접하였던 부분이며, B부와 같이 빗금치지 않은 부분은 포토에칭원판의 차광부에 접하였던 부분으로, 에칭액에 의해 부식되어진 부분이다.3 is a structural diagram of a lead frame showing a pad. In the lead frame in which the dimples 13a are formed on the pad 13, the hatched portions, such as portion A, are portions in contact with the light-transmitting portion of the photoetching disc. A portion not hatched like a portion is a portion that is in contact with the light shielding portion of the photoetching disc, and is a portion that is corroded by the etching solution.
종래 리드프레임 제조용 포토에칭원판은 제2도와 제4도에 도시되는 바와같이, 다수의 딤플형성용 차광부(33a)를 포함하는 투광부로 되는 패드형성부(33)와, 이 패드형성부(33)에 대하여 방사형으로 투광 및 차광부를 가지는 리드형성부(34)로 구성되었다.The conventional photo-etching disc for lead frame manufacturing has a pad forming portion 33, which is a light transmitting portion including a plurality of dimple forming light blocking portions 33a, as shown in FIGS. 2 and 4, and the pad forming portion 33 ) And a lead forming portion 34 having a light transmitting and shielding portion radially.
이러한 종래 리드프레임 제조용 포토에칭원판은 제4도에 도시되는 바와같이, 패드형성부(33)에서 딤플형성용 차광부(33a)에 의해 빛과 반응하지 않고 원래상태를 유지하던 감광막을 현상액으로 제거하고, 이 제거된 부위 C를 에칭액으로 부식함으로써, 패드(13)에 반도체 칩을 몰딩할 경우 밀착성이 강화되도록 하는 다수의 딤플(13a)이 형성 되는데, 이러한 딤플(13a)이 형성되도록 에칭할 경우, 양면에칭부 D가 에칭이 완료되는 시점까지 에칭을 하게 되며, 이렇게 양면에칭부의 에칭완료 시점에 의해 에칭시간이 조절됨에 따라 소재 유효부(F)보다 큰 깊이(E)로 딤플이 형성되었다.As shown in FIG. 4, the conventional photo-etching disc for lead frame manufacturing removes the photoresist film, which is not reacted with light by the dimple-forming light shielding portion 33a, from the pad forming portion 33 and remains in its original state with a developing solution. In addition, by etching the removed portion C with an etching solution, a plurality of dimples 13a are formed to enhance adhesion when the semiconductor chip is molded on the pad 13, and when the dimples 13a are etched to form. In this case, the double-sided etching part D is etched until the etching is completed. As the etching time is controlled by the completion of the etching of the double-sided etching part, dimples are formed at a depth E greater than the material effective part F.
그러나, 이러한 종래 리드프레임 제조용 포토에칭원판은, 차광부에 의해 그에 접해있는 감광막이 빛과 반응하는 것을 막아 딤플이 형성될 수 있도록 하는데, 이러한 차광부로 인해 형성되는 딤플의 깊이가 소재 유효부의 깊이 보다 크기 때문에, 과다한 딤플의 깊이로 인해 소재 유효부가 작아지고, 이에 따라 패드부에 열이 발생할 경우 열팽창이 크게 되어, 패드부상에 반도체 칩이 탑제된 후의 열팽창 상태에서는 패드부의 변형이 발생하며, 그에 따라 반도체 칩이 파괴되는 문제점이 있었다.However, such a conventional photo-etching disc for lead frame manufacturing, to prevent the photosensitive film in contact with the light by the light shielding portion to react with the light to form a dimple, the depth of the dimple formed by the light shielding portion than the depth of the material effective portion Due to the large size, the effective portion of the material becomes small due to the excessive depth of the dimples, so that the thermal expansion becomes large when heat occurs in the pad portion, and the deformation of the pad portion occurs in the thermal expansion state after the semiconductor chip is mounted on the pad portion. There was a problem that the semiconductor chip is destroyed.
본 고안의 목적은 반도체 집적회로용 리드프레임을 제조하는데 있어서, 리드프레임 중앙에 위치하는 패드부 딤플의 깊이를 리드프레임 소재 두께의 3/5이하가 되도록 함으로써, 딤플이 과다한 깊이로 에칭될 경우에 열팽창 상태에서 발생하는 패드부의 변형과 칩의 파괴를 방지하는 리드프레임 제조용 포토에칭원판을 제공하는데 있다.An object of the present invention is to manufacture a lead frame for a semiconductor integrated circuit, by making the depth of the pad portion dimple located at the center of the lead frame less than 3/5 of the thickness of the lead frame material, when the dimple is etched to an excessive depth The present invention provides a photoetching disc for lead frame manufacturing that prevents deformation of a pad portion and chip breakage occurring in a thermal expansion state.
이하 본 고안의 기술적 구성을 상세히 설명하면 다음과 같다.Hereinafter, the technical configuration of the present invention in detail.
본 고안 리드프레임 제조용 포토에칭원판은 제5도에 도시되는 바와같이, 다수의 딤플형성용 차광부(331)를 포함하는 투광부로 되는 패드형성부(330)와, 이 패드형성부(330)에 대하여 방사형으로 투광 및 차광부를 가지는 리드형성부로 구성된 것에 있어서, 상기 딤플형성용 차광부(331) 내에 에칭투해용 투광부(332)를 형성하여, 리드프레임 제조공정에서 딤플 형성을 위해 에칭할 경우 에칭이 깊게 되는 것을 방지함으로써 딤플의 깊이(E)가 리드프레임 소재(100) 두께의 약 2/5~3/5로 되도록 함을 그 기술적 구성상의 특징으로 한다.As shown in FIG. 5, the photoetching original plate for manufacturing a lead frame according to the present invention includes a pad forming part 330 which is a light transmitting part including a plurality of dimple forming light blocking parts 331, and the pad forming part 330. Comprising a lead-forming portion having a light-transmitting and shielding portion in the radial direction with respect to the etching, the etching transparent light-transmitting portion 332 is formed in the dimple-forming light-shielding portion 331, when etching to form dimples in the lead frame manufacturing process It is characterized by the technical configuration that the depth E of the dimple is about 2/5 to 3/5 of the thickness of the lead frame material 100 by preventing the deepening.
이러한 본 고안 리드프레임 제조용 포토에칭원판은 제5도에 도시되는 바와같이, 리드프레임 소재(100)에 도포된 감광막(200) 위에 이 포토에칭원판을 밀착시키고, 포토에칭원판 위에 빛을 조사하면, 패드형성부와 접해있는 감광막에서, 딤플형성용 차광부(331)와 접해있는 감광막을 제외한 주변의 감광막이 패드형성부(330)의 투광부를 통과하는 빛과 반응하여 굳어지게 된다.As shown in FIG. 5, the photoetching original plate for manufacturing the leadframe of the present invention is brought into close contact with the photoetching plate 200 on the photosensitive film 200 coated on the leadframe material 100, and irradiated with light on the photoetching plate. In the photosensitive film in contact with the pad forming part, the photosensitive film in the peripheral area except the photosensitive film contacting with the dimple forming light blocking part 331 is hardened in response to the light passing through the light transmitting part of the pad forming part 330.
한편, 딤플형성용 차광부(331)에 의해 그와 접해있는 감광막이 빛과 반응하지 않고 원래상태를 유지학 함으로써, 이를 현상액으로 제거할 수 있도록 하고, 이 제거된 부위 C를 에칭액으로 부식시킴으로써, 다수의 딤플(130a)이 형성되도록 한다.On the other hand, by the dimple-formed light shielding portion 331, the photoresist film in contact with it does not react with light to maintain its original state, so that it can be removed with a developer, and the removed portion C is corroded with an etchant, A plurality of dimples 130a are formed.
여기에서, 딤플형성용 차광부(331) 내에 형성되는 에칭저해용 투광부(332)가 작용하게 되는데, 이 에칭저해용 투광부(332)에 의해 빛이 통과되고, 차광부(331)와 접해있는 감광막 중에서 일부가 통과된 빛과 반응하여 굳어지게 됨으로써, 이후 현상액으로 감광막을 제거하는 과정에서 제거되지 않고 남게 되어, 딤플(130a)을 형성하기 위해 에칭함에 있어서, 에칭을 저해하는 에칭저해부(210)가 되어 부식되는 면을 작게 함으로써, 부식속도를 느리게 한다.Here, the etching inhibiting light transmitting portion 332 formed in the dimple forming light shielding portion 331 acts, and light passes through the etching inhibiting light transmitting portion 332 and is in contact with the light blocking portion 331. Part of the photoresist film is hardened in response to the light passing through it, and then remains unremoved in the process of removing the photoresist film with a developing solution, thereby preventing etching in forming the dimple 130a. 210) to reduce the corrosion surface, thereby reducing the corrosion rate.
따라서, 에칭 완료시간을 결정함에 있어 조건으로 작용하는 양면에칭부 D의 에칭 완료시점까지 에칭을 하여도, 그 완료시점에서의 딤플의 깊이(E)가 소재 두께의 1/2보다 적게 에칭되며, 적어도 소재 두께의 약 2/5~3/5 사이의 깊이로 관리할 수 있도록 한다.Therefore, even when etching is performed until the etching completion point of the double-sided etching portion D serving as a condition in determining the etching completion time, the depth (E) of the dimple at the completion point is etched less than half of the material thickness, Manage at least a depth between about 2/5 and 3/5 of the material thickness.
이상에서 살펴 본 바와같이, 본 고안 리드프레임 제조용 포토에칭원판은 딤플형성용 차광부 내에 에칭저해용 투광부를 형성하여, 딤플의 에칭이 깊게 되는 것을 방지하고, 딤플의 깊이를 리드프레임 소재 두께의 3/5 이하가 되도록 함으로써, 딤플이 과다한 깊이로 에칭될 경우에 열팽창 상태에서 발생하는 패드부의 변형과 칩의 파괴를 방지하여 줄 수 있는 유용한 것이다.As described above, the photoetching disc for manufacturing the leadframe of the present invention forms an etching inhibiting light-transmitting portion in the shading portion for forming dimples to prevent the etching of the dimples from deepening, and the depth of the dimple is 3 By being less than or equal to 5, it is useful to prevent deformation of the pad portion and chip breakage occurring when the dimple is etched to an excessive depth.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR92019070U KR0121882Y1 (en) | 1992-10-06 | 1992-10-06 | Photoetching disk for a lead frame manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR92019070U KR0121882Y1 (en) | 1992-10-06 | 1992-10-06 | Photoetching disk for a lead frame manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940011104U KR940011104U (en) | 1994-05-27 |
| KR0121882Y1 true KR0121882Y1 (en) | 1998-08-17 |
Family
ID=19341285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR92019070U KR0121882Y1 (en) | 1992-10-06 | 1992-10-06 | Photoetching disk for a lead frame manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0121882Y1 (en) |
-
1992
- 1992-10-06 KR KR92019070U patent/KR0121882Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR940011104U (en) | 1994-05-27 |
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