JPH0258213A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the lowering of yield due to a conductive foreign matter without decreasing the number of semiconductor devices taken from a wafer by selectively exposing only one part of the peripheral section of the wafer, to a whole area of which a photo-resist is attached. CONSTITUTION:In a process in which the peripheral section of a wafer 1, to which a pattern must be formed and to a whole area of which a photo-resist is annexed, is exposed selectively, said exposure is conducted only to one part of the peripheral section of the wafer 1. The facet section 3 of the rotating wafer 1 is detected by a facet detections section 4, and a control section 9 receiving the signal of the detecting section 4 transmits a signal opening a shutter 6 when the specified position of the peripheral section 2 of the wafer 1 reaches and opens the shutter 6 and UV beams are applied from an exposure section 5. The specified three positions of the peripheral section 2 of the wafer 1 of the negative type photo-resist attached onto the whole area of the wafer 1 are exposed, and the negative type photo-resist is left at locations 13 against where the pawl of a reflection projection exposure device abuts even after development.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method and apparatus for manufacturing a semiconductor device. In particular, it relates to selectively dimming the peripheral area of a wafer on which a photoresist is applied over the entire surface of the wafer on which a pattern is to be formed.

[Prior art] A conventional method for manufacturing a semiconductor device is disclosed in Japanese Patent Application Laid-Open No. 61-79227.
The method involved selectively exposing the periphery of a wafer whose entire surface was coated with photoresist.

[Problems to be Solved by the Invention] However, the conventional technique is for a positive type photoresist using a hard and brittle resin, and the periphery of the wafer is exposed all around.

However, the photoresist applied to the wafer is not a positive type photoresist (in the case of a negative type photoresist), and furthermore, it is not necessary to expose the entire periphery of the wafer (sometimes only a portion is sufficient, and conventional techniques Appropriate processing cannot be performed.As shown in Fig. 5, in the case of a 1:1 reflection projection type exposure system f (for example, Canon mirror projection aligner MPA-600FA), a predetermined pattern is applied to the photoresist attached to the wafer. During exposure for formation, the wafer was pressed against three or four claws 11 on the wafer disk of the exposure device in order to adjust the focus (IFOσUS).
The positional relationship between the unexposed area 13 due to the claw and the sea urchin...-1 in case 1 is shown. If this claw 110 is made of metal, it will not be exposed to light, and if it is a negative type photoresist, when it is developed, the negative type photoresist will disappear from the area where the claw 11 touches. In this case, if the process is etching of the passivation film, as shown in Figure 5,
The passivation film on a part 15 of the pattern of the semiconductor device 14 formed on the wafer is removed.
This etching over-etches the insulating film under the metal wiring layer pattern of the semiconductor device 14 to a certain extent, and if the metal wiring layer pattern is short, it may be peeled off by sea urchins. 41, a foreign body will occur. If the generated conductive foreign matter adheres to the wafer, if it is on the metal wiring layer, it will short-circuit the pattern of the metal wiring layer, causing defects in the semiconductor device. In addition, even if a short circuit does not occur, protrusions on the wafer can cause unevenness in the thickness of the photoresist in the photo phosphorography process, inhibiting normal pattern formation in the photo phosphorography process, and causing short circuits in the formed pattern. This results in pattern defects such as wire breaks,
This causes a decrease in yield.

In addition, the unexposed part 15 due to the claw is long, 5 to 6 rrrm from the periphery of the wafer, and the periphery of the sea urchin/. Removal of 4 inches (100
o+m) wafer, the area in which a semiconductor device can be formed is from 88 mm to 901 seconds, so wafer 1
This reduces the number of semiconductor devices that can be formed in a single sheet, and is therefore not acceptable.

The present invention solves these problems of the conventional technology, and its purpose is to provide a technology that prevents a decrease in yield due to conductive foreign matter without reducing the number of semiconductor devices that can be removed from a wafer. be.

[Means for Solving the Problem] The method for manufacturing a semiconductor device of the present invention solves the above-mentioned problem by selectively exposing only a portion of the periphery of the wafer.

[Embodiment] FIG. 1 is a block diagram of an embodiment of the present invention. The facet part 6 of the rotating wafer 1 is detected by the 7acenoto detection part 4, and the control part 9 receives the signal.
17+ (When the predetermined position of the side part 2 is reached, a signal is sent to open the shutter 6, the shutter 6 is opened, UV light is irradiated from the exposure part 5, and the negative type photoresist applied to the entire surface of the wafer 1 is exposed. Even after six predetermined locations in the peripheral area 2 are exposed and developed, the negative type photoresist is still exposed using a 1:1 reflection projection type exposure device (Canon iJ! IM).
The claw of P A (5001FA) should be UV.
After development, areas where no negative type photoresist remained remained without being irradiated with light. FIG. 2 shows the relationship between the unexposed area and the exposed area due to the tabs at the periphery of the wafer. This is an exposure area 16 in which only 150 unexposed areas due to claws are exposed in the exposure area 5 of 8 squares.

The area indicated by the broken line is an area in which no pattern is formed, which is formed by selective exposure of 3wIR at the periphery of a positive type photoresist wafer using the conventional technique. The semiconductor device 14 is formed up to this broken line, but in the exposure area 16 of the exposure according to this embodiment, only a slight shadow U is cast on the left and right sides of the unexposed area by the claw, and the number of semiconductor devices removed is also reduced. This is a slight decrease compared to the case where 1 ca light is selectively applied to the periphery of the wafer for 5 to 6 days. Another purpose is to form a negative type photoresist on the wafer by exposing the part of the wafer where the claw 51 hits, and also to prevent conductive foreign matter caused by peeling off of the metal wiring layer pattern that occurs during etching of the passivation film. I was able to do it.

[Effects of the Invention] As described above, according to the present invention, by selectively exposing only a part of the periphery of the wafer, it is possible to prevent the generation of conductive foreign matter, and there is no decrease in yield. (Naru.Also,
This also has the effect of suppressing a decrease in the number of semiconductor devices produced. In addition, although the effect of the present invention has been described with respect to exposing a part of the periphery of the wafer, particularly the tab of a 1:1 reflection projection type exposure device, the effect of the present invention has been described with respect to exposing a part of the periphery of the wafer, especially the tab of a 1:1 reflection projection type exposure device. The present invention can be applied to a multiple exposure section where throughput can be improved by exposing the area corresponding to the claw position at once using the number of exposure sections. Effects are unaffected.

[Brief explanation of the drawing]

Figure 1 is a configuration diagram of an embodiment of the present invention. FIG. 2 is a schematic diagram of the relationship between the base portion and the exposed portion using the tabs at the periphery of the wafer according to the embodiment of the present invention. Figure 3 shows the relationship between the undimensioned part and the wafer due to the claw of the 1:1 reflective projection type optical device. Eff diagram. Figure 4 shows the side opening of the 1:1 reflective projection type light transmitting device located inside the wafer. FIG. 5 is a schematic diagram of the periphery of the wafer. 1...Wafer 2...Peripheral section 6...Facet section 4...Facet detection section 5...
...Exposure section 6...Shutter 7...UV light source 8...Quartz 7 Eye bar 9...・Control part 10...11...Claw (cross section) 12...Wafer chuck 15...Unexposed area 14 due to the claw...Semiconductor device 15...Passivation film missing part 16...
...Exposure area

Claims (1)

[Claims] (1) A semiconductor device characterized in that, in the step of selectively exposing the periphery of the wafer on which a photoresist is applied to the entire surface of the wafer on which a pattern is to be formed, the exposure is performed only on a part of the periphery of the wafer. manufacturing method.