JP4506491B2 - Imposition lead frame, manufacturing method thereof, and semiconductor device - Google Patents

Imposition lead frame, manufacturing method thereof, and semiconductor device Download PDF

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JP4506491B2
JP4506491B2 JP2005030177A JP2005030177A JP4506491B2 JP 4506491 B2 JP4506491 B2 JP 4506491B2 JP 2005030177 A JP2005030177 A JP 2005030177A JP 2005030177 A JP2005030177 A JP 2005030177A JP 4506491 B2 JP4506491 B2 JP 4506491B2
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lead frame
imposition
outer peripheral
frame
lead
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JP2006216881A (en
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勇一 吉田
孝幸 島崎
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Toppan Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

本発明は、半導体集積回路装置等に用いる本体リードフレームを多面付けしたリードフレームに係わり、特に、リードフレームの外周枠に特定形状の突起を設けた面付けリードフレーム及び半導体装置に関する。   The present invention relates to a lead frame in which a main body lead frame used in a semiconductor integrated circuit device or the like is multi-faced, and more particularly, to an imposition lead frame and a semiconductor device in which protrusions having a specific shape are provided on an outer peripheral frame of the lead frame.

半導体集積回路装置等に用いられるリードフレームは、金属の薄板を素材とし、フォトエッチング法または、金型を用いた打ち抜き法等にて製造されている。フォトエッチング法を用いてリードフレームを製造する場合、リードフレームの製造効率を上げるため、枚葉または長尺帯状の金属板上に本体リードフレームを多面付けして製造することが一般的となっている。   A lead frame used in a semiconductor integrated circuit device or the like is manufactured by using a metal thin plate as a material and by a photo etching method or a punching method using a mold. When manufacturing a lead frame using a photo-etching method, in order to increase the manufacturing efficiency of the lead frame, it is common to manufacture the main body lead frame on a single sheet or a long strip metal plate. Yes.

図６は、リードフレーム本体を多面付けしたリードフレームの一例を示す。
図６に示すリードフレーム２０は、インナーリードとインナーリードより延在するアウターリードからなるリードフレーム本体２１が４面付けされた事例で、リードフレーム本体２１は連結ブリッジ２２で外周枠２３と連結、保持されており、本体リードフレーム２１が製造工程中に分離、脱落しない構造になっている。 FIG. 6 shows an example of a lead frame in which the lead frame body is multifaceted.
The lead frame 20 shown in FIG. 6 is an example in which a lead frame main body 21 composed of an inner lead and an outer lead extending from the inner lead is provided on four sides. The lead frame main body 21 is connected to the outer peripheral frame 23 by a connecting bridge 22. The main body lead frame 21 is structured so as not to be separated and dropped during the manufacturing process.

図５（ａ）は、リードフレーム２０をマガジンに積載し、搬送レールを用いて搬送している状態を示す上面図である。図５（ｂ）は、リードフレーム２０をマガジンに積載し、搬送レールを用いて搬送している状態を示す側断面図である。
リードフレーム２０は、図５（ａ）及び（ｂ）に示すように、マガジンに積載された状態で、プッシャで搬送レール上を搬送され、加工ユニットに送り込まれる。
加工ユニットでは半導体チップの実装、樹脂モールド等の半導体実装が行われる（例えば、特許文献２参照）。
このように、リードフレーム２０は、エッチングプロセス及びその後のパッケージング工程でも搬送レールを用いて搬送されるのが一般的である。 FIG. 5A is a top view illustrating a state in which the lead frame 20 is loaded on a magazine and is transported using a transport rail. FIG. 5B is a side cross-sectional view showing a state in which the lead frame 20 is loaded on a magazine and conveyed using a conveyance rail.
As shown in FIGS. 5A and 5B, the lead frame 20 is transported on a transport rail by a pusher while being loaded on a magazine, and is sent to a processing unit.
In the processing unit, semiconductor chip mounting, semiconductor mounting such as resin molding, and the like are performed (for example, see Patent Document 2).
As described above, the lead frame 20 is generally transported using the transport rail in the etching process and the subsequent packaging process.

搬送レールは、通常図４（ｂ）に示すように、搬送レール上のリードフレームが搬送レールから逸脱しないように、搬送レールの側面に側壁を設けている。
そのため、リードフレーム２０を搬送レールを用いて搬送する際、搬送レールの側壁とリードフレーム２０の外周枠２３が擦れて、繊維状の金属ヒゲ（例えば、長さ８０μｍ以上）が発生し、リードフレーム本体２１のリード間に付着し、半導体パッケージに仕上げたときに短絡事故を起こすという問題が発生している。
図４（ａ）及び（ｂ）に、リードフレーム２０の外周枠２３の外周部の断面を示す部分拡大図を示す。本発明者らは、金属ヒゲの発生メカニズムを検討した結果、図４（ｂ）に示すように、フォトエッチング法で作製されたリードフレーム２０の外周枠２３の外周部は中心部がえぐられた形となり、上面と下面の先端部が尖った直線状になっているため、リードフレーム２０と搬送レールの側壁が接触して擦られると、リードフレーム２０の外周枠２３の外周部の先端が一部削られて、繊維状の金属ヒゲとなり、この繊維状の金属ヒゲ（例えば、長さ８０μｍ以上）がリードフレーム本体２１のリード間にまたがり、付着し、リード間の短絡事故を発生させる原因になっていることを見いだした。
特開平９−２３２４９７号公報 特開平１１−１６８１７０号公報 As shown in FIG. 4B, the conveyance rail is usually provided with a side wall on the side surface of the conveyance rail so that the lead frame on the conveyance rail does not deviate from the conveyance rail.
Therefore, when the lead frame 20 is transported using the transport rail, the side wall of the transport rail and the outer peripheral frame 23 of the lead frame 20 are rubbed to generate a fibrous metal beard (for example, a length of 80 μm or more). There is a problem that a short circuit accident occurs when the semiconductor package is attached between the leads of the main body 21 and finished in a semiconductor package.
4A and 4B are partially enlarged views showing a cross section of the outer peripheral portion of the outer peripheral frame 23 of the lead frame 20. As a result of studying the generation mechanism of the metal whisker, the present inventors found that the outer peripheral part of the outer peripheral frame 23 of the lead frame 20 produced by the photoetching method was centered as shown in FIG. 4B. Since the top ends of the top surface and the bottom surface are in a straight line shape, when the lead frame 20 and the side wall of the transport rail come into contact with each other and are rubbed, the tips of the outer peripheral portions of the outer peripheral frame 23 of the lead frame 20 become one. The metal shaving is partly cut to form a fibrous metal beard, and this fibrous metal beard (for example, a length of 80 μm or more) straddles and adheres between the leads of the lead frame main body 21, causing a short-circuit accident between the leads. I found out that
Japanese Patent Laid-Open No. 9-232497 JP-A-11-168170

本発明は上記問題点に鑑み考案されたもので、インナーリードとインナーリードより延在するアウターリードからなるリードフレーム本体が多面付けされた面付けリードフレームを搬送レールで搬送する際に、繊維状の金属ヒゲ（例えば、長さ８０μｍ以上）を発生させない面付けリードフレーム及びその製造方法並びに半導体装置を提供することを目的とする。   The present invention has been devised in view of the above-mentioned problems, and when conveying an imposition lead frame having a multi-sided lead frame body composed of an inner lead and an outer lead extending from the inner lead, on a conveying rail, An object of the present invention is to provide an imposition lead frame that does not generate metal whiskers (for example, a length of 80 μm or more), a manufacturing method thereof, and a semiconductor device.

本発明は、上記課題を達成するために、まず請求項１においては、インナーリードとインナーリードより延在するアウターリードからなるリードフレーム本体１１が複数面付けされて、ブリッジ１２で外周枠１３に保持されてなり、搬送レール上を搬送される、金属製面付けリードフレーム１０であって、前記搬送レールの側壁と接触する、前記面付けリ
ードフレーム１０の外周枠１３の外周部に複数箇所、平面視で山状の突起１４を設けたことを特徴とする面付けリードフレームとしたものである。 In order to achieve the above object, according to the present invention, first, in claim 1, a plurality of lead frame main bodies 11 comprising inner leads and outer leads extending from the inner leads are attached to the outer peripheral frame 13 by the bridge 12. Ri Na is held and transported on the transport rails, a metallic surface with the lead frame 10, in contact with the side wall of the transfer rail, a plurality of locations on the outer peripheral portion of the peripheral frame 13 of the imposition lead frame 10 The imposition lead frame is characterized in that a mountain-shaped protrusion 14 is provided in plan view .

また、請求項２においては、前記外周枠の山状の突起１４の突起幅が１０〜８０μｍ、突起高さが１０〜５０μｍであることを特徴とする請求項１に記載の面付けリードフレームとしたものである。   The imposition lead frame according to claim 1, wherein a projection width of the mountain-shaped projections 14 of the outer peripheral frame is 10 to 80 μm and a projection height is 10 to 50 μm. It is a thing.

また、請求項３においては、請求項１または２に記載の面付けリードフレームに半導体チップを搭載し、樹脂封止したことを特徴とする半導体装置としたものである。 According to a third aspect of the present invention, there is provided a semiconductor device characterized in that a semiconductor chip is mounted on the imposition lead frame according to the first or second aspect and sealed with resin .

さらにまた、請求項４においては、少なくとも以下の工程を具備することを特徴とする、搬送レール上を搬送される、請求項１又は２に記載の金属製面付けリードフレームの製造方法としたものである。
（ａ）金属基材の両面に感光層を形成する工程。
（ｂ）リードフレームパターンの前記搬送レールの側壁と接触する外周枠の外周部のパターンに、平面視で山状の突起形成用パターンが複数箇所形成された露光マスクを用いて前記感光層をパターン露光し、現像処理等の一連のパターニング処理を行って、金属基材の両面にレジストパターンを形成する工程。
（ｃ）レジストパターンをマスクにして、金属基材をエッチングし、レジストパターンを剥離する工程。 Furthermore, in Claim 4, it is set as the manufacturing method of the metal imposition lead frame of Claim 1 or 2 conveyed on the conveyance rail characterized by including the following processes. It is.
(A) The process of forming a photosensitive layer on both surfaces of a metal base material.
(B) patterning the photosensitive layer using an exposure mask in which a plurality of mountain-shaped projection forming patterns are formed in a plan view on the pattern of the outer peripheral portion of the outer peripheral frame that is in contact with the side wall of the transport rail of the lead frame pattern A step of exposing and performing a series of patterning processes such as a development process to form resist patterns on both surfaces of the metal substrate.
(C) A step of etching the metal substrate using the resist pattern as a mask, and peeling the resist pattern.

本発明の面付けリードフレームは、面付けリードフレームの外周枠の側壁に山状の突起を設けているため、面付けリードフレームを搬送レールで搬送する際、面付けリードフレームの外周枠が搬送レールの側壁と接触し擦れても、繊維状の金属ヒゲ（例えば、長さ８０μｍ以上）の発生を防止できる。
本発明の面付けリードフレームを用いて半導体装置を作製すれば、繊維状の金属ヒゲの付着によるリード間の短絡事故の発生もなく、信頼性のある半導体装置を提供できる。 Since the imposition lead frame of the present invention has a mountain-shaped protrusion on the side wall of the outer peripheral frame of the imposition lead frame, the outer peripheral frame of the imposition lead frame is conveyed when the imposition lead frame is conveyed by the conveyance rail. Generation of fibrous metal whiskers (for example, a length of 80 μm or more) can be prevented even if they contact and rub against the side walls of the rail.
If a semiconductor device is manufactured using the imposition lead frame of the present invention, a reliable semiconductor device can be provided without occurrence of a short circuit accident between leads due to adhesion of fibrous metal whiskers.

本発明の面付けリードフレーム及びその製造方法並びに半導体装置の実施の形態につき説明する。
図１は、本発明の面付けリードフレームの一実施例を示す面付けリードフレーム１０の模式平面図を、図２は、面付けリードフレーム１０の部分拡大模式平面図を示す。
請求項１に係る面付けリードフレーム１０は、インナーリードとインナーリードより延在するアウターリードからなるリードフレーム本体１１が４面面付けされた事例で、リードフレーム本体１１は連結ブリッジ１２で外周枠１３に連結されて、リードフレーム本体１１が製造工程中に分離、脱落しない構造になっており、搬送レールの側壁と対向する外周枠１３の外周部側壁に山状の突起１４が形成されているのが特徴である。 Embodiments of an imposition lead frame, a manufacturing method thereof, and a semiconductor device according to the present invention will be described.
FIG. 1 is a schematic plan view of an imposition lead frame 10 showing an embodiment of the imposition lead frame of the present invention, and FIG. 2 is a partially enlarged schematic plan view of the imposition lead frame 10.
An imposition lead frame 10 according to claim 1 is an example in which a lead frame main body 11 comprising an inner lead and an outer lead extending from the inner lead is four-face imposition, and the lead frame main body 11 is a connecting bridge 12 and an outer peripheral frame. The lead frame main body 11 is structured so as not to be separated and dropped during the manufacturing process, and a mountain-shaped protrusion 14 is formed on the outer peripheral side wall of the outer peripheral frame 13 facing the side wall of the transport rail. Is the feature.

請求項２に係る発明は、上記外周枠１３の外周部に形成された山状の突起１４の突起幅Ｗと突起高さｈを規定したもので、山状の突起１４の突起幅Ｗが１０〜８０μｍ、突起高さが１０〜５０μｍとしたものである（図２参照）。また、山状の突起１４のピッチｐは任意に設定してよい。
このように、面付けリードフレーム１０の外周枠１３の外周部に突起幅Ｗが１０〜８０μｍ、突起高さが１０〜５０μｍの山状の突起１４を設けることにより、面付けリードフレーム１０が搬送レール上を搬送されても、従来の面付けリードフレーム２０のように搬送レール側壁との接触により外周枠２３が削れて繊維状金属ヒゲ（例えば、長さ８０μｍ以上）が発生するのを防止できる。
また、搬送レール側壁との接触によりリードフレームから金属カスが発生したとしても、山状の突起１４の先端が削られる程度で少なくとも５０μｍ以下の金属カスとなり、リードフレーム本体のリード間にまたがって、リード間の短絡事故に繋がるような金属カスの発生を防止できる。 The invention according to claim 2 defines the protrusion width W and protrusion height h of the mountain-shaped protrusion 14 formed on the outer peripheral portion of the outer peripheral frame 13, and the protrusion width W of the mountain-shaped protrusion 14 is 10. ˜80 μm and the protrusion height is 10 to 50 μm (see FIG. 2). Further, the pitch p of the mountain-shaped protrusions 14 may be set arbitrarily.
As described above, by providing the mountain-shaped protrusions 14 having the protrusion width W of 10 to 80 μm and the protrusion height of 10 to 50 μm on the outer peripheral portion of the outer peripheral frame 13 of the imposition lead frame 10, the imposition lead frame 10 is conveyed. Even when transported on the rail, it is possible to prevent the outer peripheral frame 23 from being scraped by contact with the transport rail side wall as in the case of the conventional imposition lead frame 20 and the occurrence of fibrous metal whiskers (for example, a length of 80 μm or more). .
Further, even if metal debris is generated from the lead frame due to contact with the conveyance rail side wall, it becomes a metal debris of at least 50 μm or less to the extent that the tip of the mountain-shaped protrusion 14 is scraped, straddling between the leads of the lead frame main body, Generation of metal debris that can lead to a short-circuit between the leads can be prevented.

請求項３に係わる発明は、面付けリードフレーム１０に半導体チップ３１を搭載し、樹脂封止して半導体装置１００を形成したものである。
具体的には、面付けリードフレーム１０のリードフレーム本体１１のダイパッド上に半導体チップ３１をダイボンドし、半導体チップ３１の電極パッドとインナーリードをワイヤボンディングで接続し、モールド樹脂５１で樹脂封止し、面付けリードフレーム１０の外周枠１３の連結ブリッジ１２を切断して、アウターリードを折り曲げて、本発明の半導体装置１００を得る。 According to a third aspect of the present invention, the semiconductor chip 31 is mounted on the imposition lead frame 10 and the semiconductor device 100 is formed by resin sealing.
Specifically, the semiconductor chip 31 is die-bonded on the die pad of the lead frame body 11 of the imposition lead frame 10, the electrode pad of the semiconductor chip 31 and the inner lead are connected by wire bonding, and the resin is sealed with the mold resin 51. Then, the connecting bridge 12 of the outer peripheral frame 13 of the imposition lead frame 10 is cut and the outer leads are bent to obtain the semiconductor device 100 of the present invention.

請求項４に係わる発明は、金属基材をフォトエッチング加工してリードフレームを作製する際リードフレーム本体のリードパターンと、外周枠の山状の突起パターンとが形成された露光マスクを用いてパターン露光、現像処理してレジストパターンを形成し、エッチング加工して、外周枠の外周部に山状の突起を設けた面付けリードフレームを作製するものである。   According to a fourth aspect of the present invention, when a lead frame is produced by photoetching a metal substrate, a pattern is formed using an exposure mask in which a lead pattern of a lead frame main body and a mountain-shaped projection pattern of an outer peripheral frame are formed. A resist pattern is formed by exposure and development processing, and etching processing is performed to produce an imposition lead frame having a mountain-shaped protrusion on the outer peripheral portion of the outer peripheral frame.

具体的には、まず、銅合金等からなる金属基材を所定サイズに加工し、金属基材の両面に感光性のドライフィルムをラミネートする等の方法で感光層を形成する。
次に、リードフレーム本体のリードパターンと外周枠の外周部に山状の突起形成用パターンが形成された露光マスクを用いてパターン露光し、専用の現像液で現像処理を行い、ポストベークを行って、金属基材の両面にレジストパターンを形成する。
ここで、外周枠の外周部に形成する山状の突起パターンの突起幅Ｗと突起高さｈは、突起幅Ｗが１０〜８０μｍ、突起高さが１０〜５０μｍの範囲で適宜設定する。また、突起パターンのピッチＰは、任意に設定できる（図２参照）。
また、金属基材の外周枠の外周部に形成する山状の突起パターンは、金属基材の表裏で１／２Ｐずらして配置しても良い。 Specifically, first, a metal layer made of a copper alloy or the like is processed into a predetermined size, and a photosensitive layer is formed by a method such as laminating a photosensitive dry film on both surfaces of the metal substrate.
Next, pattern exposure is performed using an exposure mask in which a lead pattern of the lead frame main body and an outer peripheral portion of the outer peripheral frame are formed with a chevron-shaped projection forming pattern, development processing is performed with a dedicated developer, and post baking is performed. Then, a resist pattern is formed on both surfaces of the metal substrate.
Here, the protrusion width W and the protrusion height h of the mountain-shaped protrusion pattern formed on the outer peripheral portion of the outer peripheral frame are appropriately set within a range where the protrusion width W is 10 to 80 μm and the protrusion height is 10 to 50 μm. Further, the pitch P of the protrusion pattern can be arbitrarily set (see FIG. 2).
Moreover, you may arrange | position the mountain-shaped protrusion pattern formed in the outer peripheral part of the outer periphery frame of a metal base material by 1 / 2P shift | offset | difference with the front and back of a metal base material.

次に、金属基材の両面に形成されたレジストパターンをマスクにして、塩化第２鉄等のエッチング液で金属基材をエッチングし、レジストパターンを剥離して、インナーリードとインナーリードより延在するアウターリードからなるリードフレーム本体１１が４面付けされ、外周枠１３の外周部に山状の突起１４が形成された面付けリードフレーム１００を得る（図１参照）。
ここでは、リードフレーム本体１１が４面付けされた事例について説明したが、面付け数はこれに限定されるものではない。 Next, using the resist pattern formed on both sides of the metal substrate as a mask, the metal substrate is etched with an etching solution such as ferric chloride, the resist pattern is peeled off, and the inner lead and the inner lead are extended. A lead frame main body 11 made of outer leads is provided on four surfaces, and an imposition lead frame 100 having a mountain-like protrusion 14 formed on the outer peripheral portion of the outer peripheral frame 13 is obtained (see FIG. 1).
Here, an example in which the lead frame main body 11 is four-sided has been described, but the number of impositions is not limited to this.

本発明の面付けリードフレームの一実施例を示す模式平面図である。It is a schematic plan view which shows one Example of the imposition lead frame of this invention. 本発明の面付けリードフレームのリードフレーム本体の模式部分拡大平面図である。It is a model partial enlarged plan view of a lead frame main part of an imposition lead frame of the present invention. 本発明の半導体装置の一実施例を示す模式構成断面図である。。1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention. . （ａ）は、従来のリードフレームの外周枠の一部を示す模式斜視図である。（ｂ）は、（ａ）をＡ−Ａ’線で切断した模式構成断面図である。(A) is a schematic perspective view which shows a part of outer periphery frame of the conventional lead frame. (B) is a schematic cross-sectional view taken along line A-A ′ of (a). （ａ）は、リードフレームを搬送レールを用いて搬送している状態を示す上面図である。（ｂ）は、リードフレームを搬送レールを用いて搬送している状態を示す側面図である。(A) is a top view which shows the state which is conveying the lead frame using a conveyance rail. (B) is a side view which shows the state which is conveying the lead frame using a conveyance rail. 従来の面付けリードフレームの一例を示す模式平面図である。It is a schematic top view which shows an example of the conventional imposition lead frame.

符号の説明Explanation of symbols

１０、２０……面付けリードフレーム
１１、２１……リードフレーム本体
１２、２２……連結ブリッジ
１３、２３……外周枠
１４……山状の突起
３１……半導体チップ
４１……ボンディングワイヤ
５１……モールド樹脂
１００……半導体装置 10, 20... Imposed lead frames 11, 21... Lead frame bodies 12, 22... Connection bridges 13, 23, outer peripheral frame 14, mountain-shaped protrusions 31, semiconductor chips 41, bonding wires 51, etc. ... Mold resin 100 ... Semiconductor device

Claims (4)

インナーリードとインナーリードより延在するアウターリードからなるリードフレーム本体（１１）が複数面付けされて、ブリッジ（１２）で外周枠（１３）に保持されてなり、搬送レール上を搬送される、金属製面付けリードフレーム（１０）であって、
前記搬送レールの側壁と接触する、前記面付けリードフレーム（１０）の外周枠（１３）の外周部に複数箇所、平面視で山状の突起（１４）を設けたことを特徴とする面付けリードフレーム。 A lead frame body made of outer leads extending from the inner lead and the inner lead (11) is more imposition, Ri Na is held on the outer circumferential frame in the bridge (12) (13), carried on the transfer rail A metal imposition lead frame (10),
Imposition characterized in that a plurality of projections (14) in a plan view are provided on the outer peripheral portion of the outer peripheral frame (13) of the imposition lead frame (10) that contacts the side wall of the transport rail. Lead frame. 前記外周枠の山状の突起（１４）の突起幅が１０〜８０μｍ、突起高さが１０〜５０μｍであることを特徴とする請求項１に記載の面付けリードフレーム。   2. The imposition lead frame according to claim 1, wherein a protrusion width of the mountain-shaped protrusions (14) of the outer peripheral frame is 10 to 80 μm and a protrusion height is 10 to 50 μm. 請求項１または２に記載の面付けリードフレームに半導体チップを搭載し、樹脂封止したことを特徴とする半導体装置。   A semiconductor device comprising a semiconductor chip mounted on the imposition lead frame according to claim 1 and sealed with resin. 少なくとも以下の工程を具備することを特徴とする、搬送レール上を搬送される、請求項１又は２に記載の金属製面付けリードフレームの製造方法。
（ａ）金属基材の両面に感光層を形成する工程。
（ｂ）リードフレームパターンの前記搬送レールの側壁と接触する外周枠の外周部のパターンに、平面視で山状の突起形成用パターンが複数箇所形成された露光マスクを用いて前記感光層をパターン露光し、現像処理等の一連のパターニング処理を行って、金属基材の両面にレジストパターンを形成する工程。
（ｃ）レジストパターンをマスクにして、金属基材をエッチングし、レジストパターンを剥離する工程。 The method for producing a metal -imposed lead frame according to claim 1 or 2, wherein the method comprises at least the following steps and is conveyed on a conveyance rail .
(A) The process of forming a photosensitive layer on both surfaces of a metal base material.
(B) patterning the photosensitive layer using an exposure mask in which a plurality of mountain-shaped projection forming patterns are formed in a plan view on the pattern of the outer peripheral portion of the outer peripheral frame that is in contact with the side wall of the transport rail of the lead frame pattern A step of exposing and performing a series of patterning processes such as a development process to form resist patterns on both surfaces of the metal substrate.
(C) A step of etching the metal substrate using the resist pattern as a mask, and peeling the resist pattern.
JP2005030177A 2005-02-07 2005-02-07 Imposition lead frame, manufacturing method thereof, and semiconductor device Expired - Fee Related JP4506491B2 (en)

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JPH01288557A (en) * 1988-05-16 1989-11-20 Rohm Co Ltd Intermittently transporting device for long lead frame
JPH0927563A (en) * 1995-05-09 1997-01-28 Mitsui High Tec Inc Manufacture of semiconductor device
JP2004319816A (en) * 2003-04-17 2004-11-11 Fujitsu Ltd Lead frame and its manufacturing method

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JPS62102549A (en) * 1985-10-29 1987-05-13 Dainippon Printing Co Ltd Etched product attached at multiple sides
JPH01288557A (en) * 1988-05-16 1989-11-20 Rohm Co Ltd Intermittently transporting device for long lead frame
JPH0927563A (en) * 1995-05-09 1997-01-28 Mitsui High Tec Inc Manufacture of semiconductor device
JP2004319816A (en) * 2003-04-17 2004-11-11 Fujitsu Ltd Lead frame and its manufacturing method

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