KR960005778A - 이온빔 전자중화기 - Google Patents

이온빔 전자중화기 Download PDF

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Publication number
KR960005778A
KR960005778A KR1019950018842A KR19950018842A KR960005778A KR 960005778 A KR960005778 A KR 960005778A KR 1019950018842 A KR1019950018842 A KR 1019950018842A KR 19950018842 A KR19950018842 A KR 19950018842A KR 960005778 A KR960005778 A KR 960005778A
Authority
KR
South Korea
Prior art keywords
electrons
ion beam
reflector
electron
filaments
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019950018842A
Other languages
English (en)
Korean (ko)
Inventor
모리스 벤베니스테 빅터
Original Assignee
프랑크 엠 사죠백
이턴 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프랑크 엠 사죠백, 이턴 코오포레이숀 filed Critical 프랑크 엠 사죠백
Publication of KR960005778A publication Critical patent/KR960005778A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1019950018842A 1994-07-01 1995-06-30 이온빔 전자중화기 Abandoned KR960005778A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/270,022 1994-07-01
US08/270,022 US5531420A (en) 1994-07-01 1994-07-01 Ion beam electron neutralizer

Publications (1)

Publication Number Publication Date
KR960005778A true KR960005778A (ko) 1996-02-23

Family

ID=23029569

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950018842A Abandoned KR960005778A (ko) 1994-07-01 1995-06-30 이온빔 전자중화기

Country Status (6)

Country Link
US (1) US5531420A (enExample)
EP (1) EP0690473A3 (enExample)
JP (1) JPH0855600A (enExample)
KR (1) KR960005778A (enExample)
CN (1) CN1125896A (enExample)
TW (1) TW275133B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100553780B1 (ko) * 1999-04-30 2006-02-20 닛신덴키 가부시키 가이샤 이온주입장치

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5703375A (en) * 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
US5814819A (en) * 1997-07-11 1998-09-29 Eaton Corporation System and method for neutralizing an ion beam using water vapor
US5909031A (en) * 1997-09-08 1999-06-01 Eaton Corporation Ion implanter electron shower having enhanced secondary electron emission
US5856674A (en) * 1997-09-16 1999-01-05 Eaton Corporation Filament for ion implanter plasma shower
US5959305A (en) * 1998-06-19 1999-09-28 Eaton Corporation Method and apparatus for monitoring charge neutralization operation
JP2003520393A (ja) 1999-12-10 2003-07-02 エピオン コーポレイション ガスクラスターイオンビーム形成用イオン化装置
US7064491B2 (en) * 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
US20020175297A1 (en) * 2001-05-25 2002-11-28 Scheuer Jay T. Methods and apparatus for ion implantation with variable spatial frequency scan lines
KR100836765B1 (ko) * 2007-01-08 2008-06-10 삼성전자주식회사 이온빔을 사용하는 반도체 장비
US7786431B1 (en) * 2007-06-17 2010-08-31 Donofrio Raymond S Magnetically modulated, spin vector correlated beam generator for projecting electrically right, neutral, or left beams
US8089051B2 (en) * 2010-02-24 2012-01-03 Kla-Tencor Corporation Electron reflector with multiple reflective modes
CN102751154A (zh) * 2011-04-22 2012-10-24 上海凯世通半导体有限公司 离子注入实时检测和控制装置
CN105206492A (zh) * 2014-06-18 2015-12-30 上海华力微电子有限公司 一种改善带状离子束均匀性的装置
RU2696268C2 (ru) * 2014-11-19 2019-08-01 Таэ Текнолоджиз, Инк. Фотонный нейтрализатор для инжекторов пучков нейтральных частиц
CN106783491A (zh) * 2016-12-23 2017-05-31 信利（惠州）智能显示有限公司 一种离子注入设备及其使用方法
RU2666766C1 (ru) * 2017-12-28 2018-09-12 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет" Способ имплантации ионов вещества
CN112885689A (zh) * 2021-03-11 2021-06-01 无锡中微掩模电子有限公司 一种新型fei850离子束修补机电子中和漏斗

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140576A (en) * 1976-09-22 1979-02-20 The United States Of America As Represented By The United States Department Of Energy Apparatus for neutralization of accelerated ions
US4361762A (en) * 1980-07-30 1982-11-30 Rca Corporation Apparatus and method for neutralizing the beam in an ion implanter
US4786814A (en) * 1983-09-16 1988-11-22 General Electric Company Method of reducing electrostatic charge on ion-implanted devices
US4672210A (en) 1985-09-03 1987-06-09 Eaton Corporation Ion implanter target chamber
US4916311A (en) * 1987-03-12 1990-04-10 Mitsubishi Denki Kabushiki Kaisha Ion beaming irradiating apparatus including ion neutralizer
US4886971A (en) * 1987-03-13 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Ion beam irradiating apparatus including ion neutralizer
JPH0191431A (ja) * 1987-04-16 1989-04-11 Sumitomo Eaton Noba Kk イオン打ち込み装置におけるウエハ帯電量検知装置
US4825087A (en) * 1987-05-13 1989-04-25 Applied Materials, Inc. System and methods for wafer charge reduction for ion implantation
JPS6410563A (en) * 1987-07-02 1989-01-13 Sumitomo Eaton Nova Electric charging suppressor of ion implanter
US4804837A (en) * 1988-01-11 1989-02-14 Eaton Corporation Ion implantation surface charge control method and apparatus
JPH01220350A (ja) * 1988-02-26 1989-09-04 Hitachi Ltd 帯電抑制方法及びその装置を用いた粒子線照射装置
ATE111635T1 (de) * 1989-05-09 1994-09-15 Sumitomo Eaton Nova Ionen-implantationsgerät, in dem das elektrische aufladen von substraten vermieden wird.
JP2704438B2 (ja) * 1989-09-04 1998-01-26 東京エレクトロン株式会社 イオン注入装置
US5026997A (en) 1989-11-13 1991-06-25 Eaton Corporation Elliptical ion beam distribution method and apparatus
US4960990A (en) * 1989-12-26 1990-10-02 The United States Of America As Represented By The Secretary Of The Army Non coherent photoneutralizer
US5160695A (en) * 1990-02-08 1992-11-03 Qed, Inc. Method and apparatus for creating and controlling nuclear fusion reactions
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
US5126576A (en) * 1990-12-13 1992-06-30 Applied Materials, Inc. Method and apparatus for controlling the rate of emission of electrons used for charge neutralization in ion implantation
JPH05135731A (ja) * 1991-07-08 1993-06-01 Sony Corp イオン注入装置
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100553780B1 (ko) * 1999-04-30 2006-02-20 닛신덴키 가부시키 가이샤 이온주입장치

Also Published As

Publication number Publication date
EP0690473A3 (en) 1998-03-11
TW275133B (enExample) 1996-05-01
CN1125896A (zh) 1996-07-03
JPH0855600A (ja) 1996-02-27
EP0690473A2 (en) 1996-01-03
US5531420A (en) 1996-07-02

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

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St.27 status event code: A-3-3-R10-R17-oth-X000

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PN2301 Change of applicant

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St.27 status event code: A-3-3-R10-R11-asn-PN2301

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee

St.27 status event code: A-2-2-U10-U13-oth-PC1904

St.27 status event code: N-2-6-B10-B12-nap-PC1904

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

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R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000