TW275133B - - Google Patents
Info
- Publication number
- TW275133B TW275133B TW084106512A TW84106512A TW275133B TW 275133 B TW275133 B TW 275133B TW 084106512 A TW084106512 A TW 084106512A TW 84106512 A TW84106512 A TW 84106512A TW 275133 B TW275133 B TW 275133B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/270,022 US5531420A (en) | 1994-07-01 | 1994-07-01 | Ion beam electron neutralizer |
Publications (1)
Publication Number | Publication Date |
---|---|
TW275133B true TW275133B (zh) | 1996-05-01 |
Family
ID=23029569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084106512A TW275133B (zh) | 1994-07-01 | 1995-06-24 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5531420A (zh) |
EP (1) | EP0690473A3 (zh) |
JP (1) | JPH0855600A (zh) |
KR (1) | KR960005778A (zh) |
CN (1) | CN1125896A (zh) |
TW (1) | TW275133B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI483281B (zh) * | 2010-02-24 | 2015-05-01 | Kla Tencor Corp | 用於反射電子之方法及裝置 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703375A (en) * | 1996-08-02 | 1997-12-30 | Eaton Corporation | Method and apparatus for ion beam neutralization |
US5814819A (en) * | 1997-07-11 | 1998-09-29 | Eaton Corporation | System and method for neutralizing an ion beam using water vapor |
US5909031A (en) * | 1997-09-08 | 1999-06-01 | Eaton Corporation | Ion implanter electron shower having enhanced secondary electron emission |
US5856674A (en) * | 1997-09-16 | 1999-01-05 | Eaton Corporation | Filament for ion implanter plasma shower |
US5959305A (en) * | 1998-06-19 | 1999-09-28 | Eaton Corporation | Method and apparatus for monitoring charge neutralization operation |
US6555831B1 (en) * | 1999-04-30 | 2003-04-29 | Nissin Electric Co., Ltd. | Ion implanting apparatus |
JP2003520393A (ja) | 1999-12-10 | 2003-07-02 | エピオン コーポレイション | ガスクラスターイオンビーム形成用イオン化装置 |
US7064491B2 (en) * | 2000-11-30 | 2006-06-20 | Semequip, Inc. | Ion implantation system and control method |
US20020175297A1 (en) * | 2001-05-25 | 2002-11-28 | Scheuer Jay T. | Methods and apparatus for ion implantation with variable spatial frequency scan lines |
KR100836765B1 (ko) * | 2007-01-08 | 2008-06-10 | 삼성전자주식회사 | 이온빔을 사용하는 반도체 장비 |
US7786431B1 (en) * | 2007-06-17 | 2010-08-31 | Donofrio Raymond S | Magnetically modulated, spin vector correlated beam generator for projecting electrically right, neutral, or left beams |
CN102751154A (zh) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | 离子注入实时检测和控制装置 |
CN105206492A (zh) * | 2014-06-18 | 2015-12-30 | 上海华力微电子有限公司 | 一种改善带状离子束均匀性的装置 |
RU2696268C2 (ru) * | 2014-11-19 | 2019-08-01 | Таэ Текнолоджиз, Инк. | Фотонный нейтрализатор для инжекторов пучков нейтральных частиц |
CN106783491A (zh) * | 2016-12-23 | 2017-05-31 | 信利(惠州)智能显示有限公司 | 一种离子注入设备及其使用方法 |
RU2666766C1 (ru) * | 2017-12-28 | 2018-09-12 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский политехнический университет" | Способ имплантации ионов вещества |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4140576A (en) * | 1976-09-22 | 1979-02-20 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for neutralization of accelerated ions |
US4361762A (en) * | 1980-07-30 | 1982-11-30 | Rca Corporation | Apparatus and method for neutralizing the beam in an ion implanter |
US4786814A (en) * | 1983-09-16 | 1988-11-22 | General Electric Company | Method of reducing electrostatic charge on ion-implanted devices |
US4672210A (en) | 1985-09-03 | 1987-06-09 | Eaton Corporation | Ion implanter target chamber |
US4916311A (en) * | 1987-03-12 | 1990-04-10 | Mitsubishi Denki Kabushiki Kaisha | Ion beaming irradiating apparatus including ion neutralizer |
US4886971A (en) * | 1987-03-13 | 1989-12-12 | Mitsubishi Denki Kabushiki Kaisha | Ion beam irradiating apparatus including ion neutralizer |
JPH0191431A (ja) * | 1987-04-16 | 1989-04-11 | Sumitomo Eaton Noba Kk | イオン打ち込み装置におけるウエハ帯電量検知装置 |
US4825087A (en) * | 1987-05-13 | 1989-04-25 | Applied Materials, Inc. | System and methods for wafer charge reduction for ion implantation |
JPS6410563A (en) * | 1987-07-02 | 1989-01-13 | Sumitomo Eaton Nova | Electric charging suppressor of ion implanter |
US4804837A (en) * | 1988-01-11 | 1989-02-14 | Eaton Corporation | Ion implantation surface charge control method and apparatus |
JPH01220350A (ja) * | 1988-02-26 | 1989-09-04 | Hitachi Ltd | 帯電抑制方法及びその装置を用いた粒子線照射装置 |
DE69012414T2 (de) * | 1989-05-09 | 1995-02-16 | Sumitomo Eaton Nova | Ionen-Implantationsgerät, in dem das elektrische Aufladen von Substraten vermieden wird. |
JP2704438B2 (ja) * | 1989-09-04 | 1998-01-26 | 東京エレクトロン株式会社 | イオン注入装置 |
US5026997A (en) | 1989-11-13 | 1991-06-25 | Eaton Corporation | Elliptical ion beam distribution method and apparatus |
US4960990A (en) * | 1989-12-26 | 1990-10-02 | The United States Of America As Represented By The Secretary Of The Army | Non coherent photoneutralizer |
US5160695A (en) * | 1990-02-08 | 1992-11-03 | Qed, Inc. | Method and apparatus for creating and controlling nuclear fusion reactions |
US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
US5126576A (en) * | 1990-12-13 | 1992-06-30 | Applied Materials, Inc. | Method and apparatus for controlling the rate of emission of electrons used for charge neutralization in ion implantation |
JPH05135731A (ja) * | 1991-07-08 | 1993-06-01 | Sony Corp | イオン注入装置 |
US5164599A (en) * | 1991-07-19 | 1992-11-17 | Eaton Corporation | Ion beam neutralization means generating diffuse secondary emission electron shower |
-
1994
- 1994-07-01 US US08/270,022 patent/US5531420A/en not_active Expired - Fee Related
-
1995
- 1995-06-21 EP EP95304353A patent/EP0690473A3/en not_active Withdrawn
- 1995-06-24 TW TW084106512A patent/TW275133B/zh active
- 1995-06-30 KR KR1019950018842A patent/KR960005778A/ko active IP Right Grant
- 1995-06-30 CN CN95109116A patent/CN1125896A/zh active Pending
- 1995-07-03 JP JP7189882A patent/JPH0855600A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI483281B (zh) * | 2010-02-24 | 2015-05-01 | Kla Tencor Corp | 用於反射電子之方法及裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN1125896A (zh) | 1996-07-03 |
EP0690473A2 (en) | 1996-01-03 |
US5531420A (en) | 1996-07-02 |
KR960005778A (ko) | 1996-02-23 |
JPH0855600A (ja) | 1996-02-27 |
EP0690473A3 (en) | 1998-03-11 |