KR960004098B1 - Photo semiconductor device - Google Patents
Photo semiconductor device Download PDFInfo
- Publication number
- KR960004098B1 KR960004098B1 KR1019920000364A KR920000364A KR960004098B1 KR 960004098 B1 KR960004098 B1 KR 960004098B1 KR 1019920000364 A KR1019920000364 A KR 1019920000364A KR 920000364 A KR920000364 A KR 920000364A KR 960004098 B1 KR960004098 B1 KR 960004098B1
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- South Korea
- Prior art keywords
- heat sink
- optical fiber
- semiconductor device
- light
- light emitting
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 27
- 230000003287 optical effect Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 239000000919 ceramic Substances 0.000 claims description 24
- 238000005266 casting Methods 0.000 claims description 19
- 239000013307 optical fiber Substances 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
내용 없음.No content.
Description
제 1 도는 본 발명의 1 실시예에 따른 광반도체장치의 단면도,1 is a cross-sectional view of an optical semiconductor device according to an embodiment of the present invention,
제 2 도는 제 1 도에 도시한 실시예에서의 히트싱크스템 근방의 상세한 구성을 나타낸 단면도,2 is a cross-sectional view showing the detailed configuration near the heat sink system in the embodiment shown in FIG.
제 3 도는 본 발명의 다른 실시예에 따른 광반도체장치를 위에서 본 단면도,3 is a cross-sectional view of an optical semiconductor device according to another embodiment of the present invention,
제 4 도는 제 3 도에 도시한 실시예에서의 히트싱크스템 근방의 상세단면도,4 is a detailed cross-sectional view near the heat sink system in the embodiment shown in FIG.
제 5 도는 종래의 광반도체장치의 단면도이다.5 is a cross-sectional view of a conventional optical semiconductor device.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 광반도체 발광소자 2 : 히트싱크1: optical semiconductor light emitting device 2: heat sink
3 : 적층세라믹기판 4 : 금속프레임3: laminated ceramic substrate 4: metal frame
5 : 렌즈캡 7 : 수광소자5 lens cap 7 light receiving element
8 : 전극패턴 9 : 세라믹기판8 electrode pattern 9 ceramic substrate
10 : 외부패키지 13 : 리드10: external package 13: lead
14 : 렌즈 15 : 광섬유14 lens 15 optical fiber
[산업상의 이용분야][Industrial use]
본 발명은 광섬유통신 등에 이용되는 광반도체장치에 관한 것이다.The present invention relates to an optical semiconductor device for use in optical fiber communication.
[종래의 기술 및 그 문제점][Traditional Technology and Problems]
제 5 도는 종래의 광반도체장치의 단면상태를 도시한 단면도로서, 광반도체소자(1)와 이 광반도체소자(1)에서 발광되는 빛을 모니터하기 위한 수광소자(7)가 히트싱크스템(2)에 마운트되고, 각 소자(1,7)는 히트싱크(2)에 의해 지지되어 있으면서 유리용접으로 밀봉된(glass germeticseal) 전극 리드(13)에 전기적으로 접속되어 있다. 여기서 히트싱크스템(2)은 렌즈(14)가 부착된 렌즈캡(5)에 의해 기밀화(氣密化)되어 있고, 광반도체소자로부터의 발광광은 렌즈(14)에 의해 집광되어 광섬유(15)를 통해 외부로 도출되도록 구성되어 있다.5 is a cross-sectional view showing a cross-sectional state of a conventional optical semiconductor device, wherein the optical semiconductor device 1 and the light receiving element 7 for monitoring the light emitted from the optical semiconductor device 1 include a heat sink system 2. ), Each element 1, 7 is electrically connected to an electrode lead 13 which is supported by a heat sink 2 and sealed by glass welding. Here, the heat sink system 2 is hermetically sealed by the lens cap 5 with the lens 14 attached thereto, and the emitted light from the optical semiconductor element is collected by the lens 14 to form an optical fiber ( It is configured to be drawn out through 15).
또, 히트싱크스템(2)과 렌즈(14) 및 광섬유(15)를 포함하는 광학계의 부품은 외부패키지(10)에 의해 지지되어 있고, 히트싱크스템(2)의 전극핀(12)의 광반도체소자(1)의 출사광에 대해 나란하면서 히트싱크스템(2)으로부터 입체적으로 소정의 위치관계를 유지하여 고정되어 있다.In addition, components of the optical system including the heat sink system 2, the lens 14, and the optical fiber 15 are supported by the external package 10, and the light of the electrode fins 12 of the heat sink system 2 is supported. It is fixed while maintaining a predetermined positional relationship in three dimensions from the heat sink stem 2 while being parallel to the emitted light of the semiconductor element 1.
그런데, 외부패키지(10)는 일반적으로 기판에 대한 실장을 고려하여 광반도체소자(1)의 발광광에 대해 수직방향으로 병렬인 핀배치를 표준으로 하고 있기 때문에, 히트싱크스템(2)으로부터 도출된 전극핀(12)은 외부패키지(10) 내에서 수직방향으로 구부러져 패키지(10)의 외부리드(13)에 접속된 구조로 되어 있다.However, since the external package 10 generally has a pin arrangement parallel to the emitted light of the optical semiconductor element 1 in consideration of the mounting on the substrate, it is derived from the heat sink system 2. The electrode pin 12 is bent in the vertical direction in the outer package 10 to have a structure connected to the outer lead 13 of the package 10.
한편, 최근의 광통신용 반도체장치에서는 고속동작과 소형화 및 전기적 회로소자의 집적화가 요구되고 있는 바, 고속 동작을 도모하기 위해서는 히트싱크스템(2)과 패키지(10)를 연결하는 전극핀(12)의 리드길이를 짧게 하여 패키지(10) 내부의 리드인덕턴스를 작게 할 필요가 있다.On the other hand, in the recent optical communication semiconductor device, high speed operation, miniaturization, and integration of electrical circuit elements are required. In order to achieve high speed operation, an electrode pin 12 connecting the heat sink stem 2 and the package 10 is provided. The lead length of the package 10 needs to be shortened to reduce the lead inductance inside the package 10.
그러나, 제 5 도에 도시한 바와 같은 종래의 광반도체장치에서는 히트싱크스템(2)의 리드(12)가 패키지(10) 내에 입체적으로 형성되어 있기 때문에 리드(12)를 구부려서 실장할 필요가 있었고, 그 때문에 리드(12)의 리드길이가 길어지게 되어, 리드인덕턴스가 증가함으로써 광반도체장치의 고속동작에 제한은 준다고 하는 문제점이 있었다.However, in the conventional optical semiconductor device as shown in FIG. 5, since the lead 12 of the heat sink stem 2 is formed three-dimensionally in the package 10, the lead 12 needs to be bent and mounted. Therefore, there is a problem that the lead length of the lead 12 becomes long, and the lead inductance increases, thereby limiting the high speed operation of the optical semiconductor device.
또, 핀을 구부려서 실장하기 때문에 작업효율이 나빠지고, 핀을 구부려 실장할 부분의 공간을 패키지(10)의 내부에 설치할 필요가 있기 때문에 패키지의 소형화에 제한을 준다고 하는 문제점도 있었다.In addition, there is a problem in that the work efficiency is deteriorated because the pins are bent and mounted, and the space of the portion to be bent and mounted is required to be installed inside the package 10, thereby limiting the size of the package.
더욱이, 내부 히트싱크(2) 내의 전기적 회로소자를 집적화하는 것과 리드배선을 변경하는 것이 구성상 곤란하다는 등의 문제점도 있었다.Furthermore, there have been problems such as integration of electrical circuit elements in the internal heat sink 2 and difficulty in changing lead wirings.
[발명의 목적][Purpose of invention]
본 발명은 상기한 점을 감안하여 발명된 것으로, 내부 히트싱크스템에서의 리드의 배선과 인출방향 및 개수를 자유로이 배열하여 조립작업의 효율을 향상시킴과 더불어 고속 동작을 실현할 수 있고, 또 소형화가 가능한 광반도체장치를 제공함에 그 목적이 있다.The present invention has been invented in view of the above, and it is possible to freely arrange the wiring, the drawing direction and the number of leads in the internal heat sink system to improve the efficiency of the assembling work, and to realize high-speed operation and to reduce the size. The object is to provide a possible optical semiconductor device.
[발명의 구성][Configuration of Invention]
상기 목적을 달성하기 위한 본 발명은, 히트싱크와 ; 이 히트싱크상에 마운트된 발광소자 ; 이 발광소자와 상기 히트싱크를 지지함과 더불어 덮는 제 1 캐스팅 ; 이 제 1 캐스팅을 지지함과 더불어 덮고, 외부로 연장되는 출력리드를 더 갖춘 제 2 캐스팅 및 ; 상기 제 1 캐스팅의 부분을 형성하고, 상기 발광소자 및 상기 히트싱크에 연결된 제 1 단과 상기 출력리드에 연결된 제 2 단을 갖춘 도체패턴을 포함하는 적층세라믹기판을 구비하여 구성된 것을 특징으로 한다.The present invention for achieving the above object, a heat sink; A light emitting element mounted on the heat sink; A first casting supporting and supporting the light emitting element and the heat sink; A second casting further supporting and supporting the first casting, and further having an output lead extending outwardly; And a laminated ceramic substrate forming a portion of the first casting and including a conductive pattern having a light emitting element, a first end connected to the heat sink, and a second end connected to the output lead.
또한, 상기 발광소자로부터 발광된 광을 모니터하는 수광소자와 ; 상기 발광소자로부터 상기 발광된 광을 집광하는 렌즈 및 ; 상기 제 2 캐스팅의 외부로 상기 렌즈에 의해 집광된 광을 안내하는 광섬유를 더 구비하고 ; 상기 수광소자와 상기 렌즈 및 상기 광섬유가 상기 제 1 캐스탱에 의해 지지되며 ; 상기 광섬유가 또한 상기 제 2 캐스팅에 의해 지지되는 것을 특징으로 한다.In addition, a light receiving element for monitoring the light emitted from the light emitting element; A lens for condensing the emitted light from the light emitting element; And an optical fiber for guiding light collected by the lens to the outside of the second casting; The light receiving element, the lens and the optical fiber are supported by the first castang; The optical fiber is also supported by the second casting.
더욱이, 상기 적층세라믹기판에서의 상기 도체패턴이 광섬유에 대해 실질적으로 수직방향의 각도로 외부로 연장되도록 상기 출력리드를 허용하고, 상기 광섬유가 상기 제 2 캐스팅의 외부로 광을 안내하는 것을 특징으로 한다.Furthermore, the conductor pattern in the laminated ceramic substrate allows the output lead to extend outward at an angle substantially perpendicular to the optical fiber, and the optical fiber guides the light out of the second casting. do.
또한, 상기 제 1 캐스팅의 부분을 형성하는 상기 적층세라믹기판이 상기 제 1 캐스팅의 벽을 부분적으로 대체하는 것을 특징으로 한다.The laminated ceramic substrate, which forms part of the first casting, also partially replaces the wall of the first casting.
[작용][Action]
상기와 같이 구성된 본 발명에서는 광반도체장치 내부의 제 1 패키지로부터의 도출리드와 제 2 패키지로부터의 외부도출리드와의 사이를 도체패턴을 갖는 적층세라믹기판을 이용하여 접속함으로써, 히트싱크스템의 기밀을 유지하면서 히트싱크스템에서의 리드의 배선과 인출방향 및 개수를 자유로이 형성할 수 있기 때문에 적층세라믹기판상에서 전기적 회로소자의 집적화가 가능하게 된다.According to the present invention configured as described above, the heat sink system is sealed by connecting the lead lead from the first package inside the optical semiconductor device to the lead lead from the second package using a laminated ceramic substrate having a conductor pattern. Since the wiring and the drawing direction and the number of leads of the lead in the heat sink system can be freely formed, the integration of electrical circuit elements on the laminated ceramic substrate becomes possible.
또한, 적층세라믹기판을 이용하기 때문에 내부의 리드핀의 길이를 짧게 할 수 있고, 따라서 장치내부의 리드인덕턴스를 작게할 수가 있게 되어 장치의 고속화가 가능하게 된다.In addition, since the laminated ceramic substrate is used, the length of the internal lead pin can be shortened, and therefore, the lead inductance inside the apparatus can be made small, thereby making the apparatus faster.
[실시예]EXAMPLE
이하, 에시도면을 참조하여 본 발명의 실시예에 대해 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제 1 도는 본 발명에 따른 광반도체장치의 일례를 나타낸 단면도로서, 제 5 도에 도시한 종래 장치의 구성 부분과 동일한 부분에는 같은 부호를 붙이고, 그에 대한 상세한 설명은 생략하기로 한다.FIG. 1 is a cross-sectional view showing an example of an optical semiconductor device according to the present invention. The same parts as those of the conventional device shown in FIG. 5 are denoted by the same reference numerals, and detailed description thereof will be omitted.
광반도체발광소자(1)는 히트싱크(2)상에 마운트되어 있고, 이 히트싱크(2) 상에는 패턴전극이 형성된 세라믹기판(9)이 배치되며, 광반도체발광소자(1)와 패턴전극은 와이어본딩 등에 의해 전기적으로 접속되어 있다. 상기 히트싱크(2)와 히트싱크(2) 상의 세라믹기판(9)의 전극패턴은 히트싱크(2)의 측면에 수직방향으로 설치된 적층세라믹기판(3) 상에 형성되는 전극패턴(8)과 전극적으로 접속된다.The optical semiconductor light emitting element 1 is mounted on a heat sink 2, and a ceramic substrate 9 having a pattern electrode formed thereon is disposed on the heat sink 2, and the optical semiconductor light emitting element 1 and the pattern electrode It is electrically connected by wire bonding etc. The electrode patterns of the heat sink 2 and the ceramic substrate 9 on the heat sink 2 are formed with electrode patterns 8 formed on the laminated ceramic substrate 3 provided perpendicular to the side surfaces of the heat sink 2. It is connected by electrode.
또 히트싱크(2)는 메탈라이딩(metaliding)에 의해 금속프레임(4)에 고정되고, 따라서 발광소자(1)로부터의 발열은 히트싱크스템(2)을 매개하여 금속프레임(4)에 전달되어 외부로 방출되게 된다.In addition, the heat sink 2 is fixed to the metal frame 4 by metaliding, so that heat generated from the light emitting element 1 is transmitted to the metal frame 4 via the heat sink system 2. It will be released to the outside.
발광소자(1)를 모니터하는 수광소자(7)는 적층세라믹기판(3)에 마운트되어 있으면서 발광소자(1)로부터의 발열은 히트싱크스템(2)을 매개하여 금속프레임(4)에 전달되어 외부로 방출되게 된다.The light receiving element 7 for monitoring the light emitting element 1 is mounted on the laminated ceramic substrate 3 while the heat generated from the light emitting element 1 is transmitted to the metal frame 4 through the heat sink system 2. It will be released to the outside.
발광소자(1)를 모니터하는 수광소자(7)는 적층세라믹기판(3)에 마운트되어 있으면서 와이어본딩 등에 의해 전극패턴(8)에 전기적으로 접속되어 있다. 또한, 적층세라믹기판(3,9) 상의 전극패턴은 통상적으로 두꺼운 막에 의해 형성되며, 이 경우 티타늄, 백금 및 금의 3층 구조를 사용하는 것이 일반적이다.The light receiving element 7 for monitoring the light emitting element 1 is mounted on the laminated ceramic substrate 3 and electrically connected to the electrode pattern 8 by wire bonding or the like. In addition, the electrode patterns on the laminated ceramic substrates 3 and 9 are usually formed by thick films, in which case it is common to use a three-layer structure of titanium, platinum and gold.
각 전극패턴(8)은 적층세라믹기판(3)의 내부를 통해 외부패키지(10) 내에 설치된 세라믹기판(9)상의 전극 패턴에 전기적으로 접속되고, 세라믹기판(9) 상의 배선은 외부패키지(10)의 외부 리드(13)에 전기적으로 접속된다.Each electrode pattern 8 is electrically connected to an electrode pattern on the ceramic substrate 9 provided in the outer package 10 through the inside of the laminated ceramic substrate 3, and the wiring on the ceramic substrate 9 is connected to the outer package 10. Is electrically connected to the external lead 13).
다음, 제 2 도는 제 1 도에 도시한 실시예에서의 히트싱크스템 근방의 상세구조를 나타낸 단면도로서, 도면에서 알 수 있는 바와 같이 본 발명에서는 종래장치의 패키지의 일부를 적층세라믹기판(3)으로 치환하고, 이 적층세라믹기판(3)에 외부리드(13)에 접속되고 전극패턴(11)을 형성함으로써, 이 전극패턴(11)과 발광소자(1)[혹은 수광소자(7)]를 전기적으로 접속하도록 하고 있다.Next, FIG. 2 is a cross-sectional view showing a detailed structure near the heat sink system in the embodiment shown in FIG. 1, and as can be seen from the present invention, in the present invention, a part of the package of the conventional apparatus is laminated with a ceramic substrate 3 The electrode pattern 11 and the light emitting element 1 (or the light receiving element 7) are formed by connecting to the external lead 13 and forming the electrode pattern 11 on the laminated ceramic substrate 3. It is to be electrically connected.
제 3 도 및 제 4 도는 본 발명의 다른 실시예를 나타낸 것으로, 제 3 도는 윗면에서 본 단면도를 나타내고 제 4 도는 제 3 도에 도시한 실시예의 히트싱크스템 근방의 상세구성을 나타낸 것이다.3 and 4 show another embodiment of the present invention. FIG. 3 shows a sectional view from above and FIG. 4 shows a detailed configuration near the heat sink system of the embodiment shown in FIG.
제 1 도 및 제 2 도에 도시한 실시예에서는 외부리드(13)가 발광광의 진행방향인 광섬유(15)의 방향에 대해 직각으로 되도록 향해 있지만, 제 3 도 및 제 4 도에 도시한 실시예에서는 발광광의 진행방향인 광섬유(15)의 방향과 외부리드(13)의 방향이 평행하게 되도록 구성되어 있다.In the embodiment shown in Figs. 1 and 2, the outer lead 13 is oriented at right angles to the direction of the optical fiber 15, which is the traveling direction of the emitted light, but the embodiment shown in Figs. In this case, the direction of the optical fiber 15, which is the traveling direction of the emitted light, and the direction of the external lead 13 are configured to be parallel.
일반적으로 수광소자의 피치와 광반도체장치로서의 실장리드피치는 서로 일치하지 않기 때문에, 이와 같은 구성을 채용하면 세라믹기판상의 도체패턴에 의해 리드피치의 변환을 행하는 것이 가능하게 된다.In general, the pitch of the light receiving element and the mounting lead pitch as the optical semiconductor device do not coincide with each other. Thus, by adopting such a configuration, the lead pitch can be converted by the conductor pattern on the ceramic substrate.
한편, 본원 청구범위의 각 구성요소에 병기한 도면참조부호는 본원 발명의 이해를 용이하게 하기 위한 것으로, 본원 발명의 기술적 범위를 도면에 도시한 실시예로 한정할 의도도 병기한 것은 아니다.On the other hand, the reference numerals written along the components of the claims of the present application to facilitate the understanding of the present invention, not intended to limit the technical scope of the present invention to the embodiments shown in the drawings.
[발명의 효과][Effects of the Invention]
이상 설명한 바와 같이 본 발명에 따르면, 히트싱크 및 광전변환소자를 수납하는 제 1 패키지의 일부를 도체패턴을 갖는 적층세라믹기판으로 구성하고, 이 도체패턴을 매개하여 내부소자와 제 2 패키지로부터 도출되는 외부전극리드를 접속하고 있기 때문에 내부 히트싱크스템 상에서의 리드의 배선과 인출방향 및 개수를 자유롭게 설계할 수가 있고, 따라서, 광반도체장치의 조립작업의 효율이 향상되게 된다.As described above, according to the present invention, a part of the first package containing the heat sink and the photoelectric conversion element is composed of a laminated ceramic substrate having a conductor pattern, and the conductor pattern is derived from the internal element and the second package. Since the external electrode leads are connected, the wiring, the drawing direction and the number of leads of the lead on the internal heat sink system can be freely designed, thereby improving the efficiency of assembling the optical semiconductor device.
또, 도체패턴에 의해 배선을 행하고 있기 때문에 광반도체장치 내의 리드핀의 길이를 짧게 할 수가 있으므로 고속특성을 실현할 수가 있고, 더욱이 이러한 구조를 위해 소형화가 가능하게 된다고 하는 뛰어난 효과를 얻을 수 있다.In addition, since the wiring is conducted by the conductor pattern, the length of the lead pin in the optical semiconductor device can be shortened, so that a high speed characteristic can be realized, and further, an excellent effect of miniaturization for such a structure can be obtained.
Claims (4)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP91-002731 | 1991-01-14 | ||
| JP273191A JP2695995B2 (en) | 1991-01-14 | 1991-01-14 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920015540A KR920015540A (en) | 1992-08-27 |
| KR960004098B1 true KR960004098B1 (en) | 1996-03-26 |
Family
ID=11537467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920000364A KR960004098B1 (en) | 1991-01-14 | 1992-01-14 | Photo semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5227646A (en) |
| JP (1) | JP2695995B2 (en) |
| KR (1) | KR960004098B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101022768B1 (en) * | 2003-11-07 | 2011-03-17 | 삼성전자주식회사 | Silicon optical bench structure on which semiconductor laser diode is installed |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2763980B2 (en) * | 1992-01-14 | 1998-06-11 | 富士通株式会社 | Optical semiconductor module |
| US5679979A (en) * | 1996-05-21 | 1997-10-21 | Weingand; Christopher Dirk | Surface mount package with heat transfer feature |
| US6369924B1 (en) | 1998-04-20 | 2002-04-09 | Stratos Lightwave, Inc. | Optical transceiver with enhanced shielding and related methods |
| US6577656B2 (en) * | 2001-03-13 | 2003-06-10 | Finisar Corporation | System and method of packaging a laser/detector |
| US6715936B2 (en) * | 2002-01-22 | 2004-04-06 | Megasense, Inc. | Photonic component package and method of packaging |
| KR20030087824A (en) * | 2002-05-10 | 2003-11-15 | 주식회사일진 | Optical Module for Small Form Pluggable |
| KR20040027162A (en) * | 2002-09-27 | 2004-04-01 | 주식회사일진 | optical sub-assembly module for optical communication |
| US7350987B2 (en) * | 2002-09-30 | 2008-04-01 | Intel Corporation | Optical package fiber pass-through to reduce curvature of optical fiber during threading |
| US7255494B2 (en) * | 2003-05-23 | 2007-08-14 | Intel Corporation | Low-profile package for housing an optoelectronic assembly |
| US6860652B2 (en) * | 2003-05-23 | 2005-03-01 | Intel Corporation | Package for housing an optoelectronic assembly |
| US6883978B2 (en) * | 2003-06-26 | 2005-04-26 | Matsushita Electric Industrial Co., Ltd. | Low cost package design for fiber coupled optical component |
| US7284913B2 (en) | 2003-07-14 | 2007-10-23 | Matsushita Electric Industrial Co., Ltd. | Integrated fiber attach pad for optical package |
| US7410088B2 (en) * | 2003-09-05 | 2008-08-12 | Matsushita Electric Industrial, Co., Ltd. | Solder preform for low heat stress laser solder attachment |
| US7021838B2 (en) | 2003-12-16 | 2006-04-04 | Matsushita Electric Industrial Co., Ltd. | Optimizing alignment of an optical fiber to an optical output port |
| US7119373B2 (en) * | 2004-01-23 | 2006-10-10 | Exalos Ag | Sled |
| US7263260B2 (en) * | 2005-03-14 | 2007-08-28 | Matsushita Electric Industrial Co., Ltd. | Low cost, high precision multi-point optical component attachment |
| US7302192B2 (en) * | 2005-04-28 | 2007-11-27 | Menara Networks | Methods of spread-pulse modulation and nonlinear time domain equalization for fiber optic communication channels |
| US7478955B2 (en) | 2005-08-12 | 2009-01-20 | Applied Optoelectronics, Inc. | Modular laser package system |
| US7290943B2 (en) * | 2005-08-12 | 2007-11-06 | Murry Stefan J | Modular laser package system and associated methods |
| JP4872663B2 (en) * | 2006-12-28 | 2012-02-08 | 株式会社日立製作所 | Joining material and joining method |
| US8811439B2 (en) | 2009-11-23 | 2014-08-19 | Seminex Corporation | Semiconductor laser assembly and packaging system |
| US8821042B2 (en) * | 2011-07-04 | 2014-09-02 | Sumitomo Electic Industries, Ltd. | Optical module with lens assembly directly mounted on carrier by soldering and laser diode indirectly mounted on carrier through sub-mount |
| US9500808B2 (en) * | 2012-05-09 | 2016-11-22 | The Boeing Company | Ruggedized photonic crystal sensor packaging |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5559786A (en) * | 1978-10-27 | 1980-05-06 | Fujitsu Ltd | Light semiconductor device |
| US4399453A (en) * | 1981-03-23 | 1983-08-16 | Motorola, Inc. | Low thermal impedance plastic package |
| US4752109A (en) * | 1986-09-02 | 1988-06-21 | Amp Incorporated | Optoelectronics package for a semiconductor laser |
| JPS6370589A (en) * | 1986-09-12 | 1988-03-30 | Nec Corp | Semiconductor laser module |
| JPS6381988A (en) * | 1986-09-26 | 1988-04-12 | Hitachi Tobu Semiconductor Ltd | Opto-electronic device |
| US5068865A (en) * | 1988-06-09 | 1991-11-26 | Nec Corporation | Semiconductor laser module |
-
1991
- 1991-01-14 JP JP273191A patent/JP2695995B2/en not_active Expired - Lifetime
-
1992
- 1992-01-14 KR KR1019920000364A patent/KR960004098B1/en not_active IP Right Cessation
- 1992-01-14 US US07/820,124 patent/US5227646A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101022768B1 (en) * | 2003-11-07 | 2011-03-17 | 삼성전자주식회사 | Silicon optical bench structure on which semiconductor laser diode is installed |
Also Published As
| Publication number | Publication date |
|---|---|
| US5227646A (en) | 1993-07-13 |
| KR920015540A (en) | 1992-08-27 |
| JP2695995B2 (en) | 1998-01-14 |
| JPH04241474A (en) | 1992-08-28 |
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