JPH09181339A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH09181339A JPH09181339A JP33343795A JP33343795A JPH09181339A JP H09181339 A JPH09181339 A JP H09181339A JP 33343795 A JP33343795 A JP 33343795A JP 33343795 A JP33343795 A JP 33343795A JP H09181339 A JPH09181339 A JP H09181339A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting element
- emitting device
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は光通信用の光電変
換装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device for optical communication.
【０００２】[0002]
【従来の技術】図５及び図６はそれぞれ従来の光電変換
装置の２つの例を示す平面図及び断面図である（例えば
特開昭５９−１６３８９号公報）。図５に示す従来例に
おいて、図示する又は図示しない部品を搭載するリード
フレーム１８ａ、１８ｂ、１８ｃ、１８ｄ及び１８ｅは
各端部のみを露出させて透明樹脂２１に封入されてい
る。リードフレーム１８ａ及び１８ｂ上にはそれぞれ発
光素子２０及び発光素子２０の駆動ＩＣ１９が設けられ
ている。2. Description of the Related Art FIGS. 5 and 6 are a plan view and a cross-sectional view, respectively, showing two examples of a conventional photoelectric conversion device (for example, JP-A-59-16389). In the conventional example shown in FIG. 5, lead frames 18a, 18b, 18c, 18d and 18e, on which parts shown or not shown are mounted, are sealed in a transparent resin 21 with only their ends exposed. A light emitting element 20 and a driving IC 19 for the light emitting element 20 are provided on the lead frames 18a and 18b, respectively.
【０００３】図６に示す従来例においては、リードフレ
ーム２２上にセラミックからなる多層配線基板２３〜２
５が形成される。最上層の多層配線基板２５上には、バ
イパスコンデンサ３０、発光素子３１、発光素子３１の
駆動ＩＣ３２及び制御抵抗３３が設けられて発光部１０
１を構成し、また、受光素子２７、信号処理ＩＣ２８及
びバイパスコンデンサ２９が設けられて受光部１０２を
構成する。発光部１０１及び受光部１０２はスペーサ２
６及びウエルドリング３４によって区画され上部に窓部
３５が設けられている。この窓部３５を通じて光信号を
伝達すべく図示しない光ファイバを接続する。In the conventional example shown in FIG. 6, multilayer wiring boards 23 to 2 made of ceramic are provided on a lead frame 22.
5 are formed. The bypass capacitor 30, the light emitting element 31, the drive IC 32 of the light emitting element 31, and the control resistor 33 are provided on the uppermost multilayer wiring board 25, and the light emitting unit 10 is provided.
In addition, the light receiving element 27, the signal processing IC 28, and the bypass capacitor 29 are provided to configure the light receiving unit 102. The light emitting unit 101 and the light receiving unit 102 are spacers 2.
6 and a weld ring 34, and a window portion 35 is provided on the upper portion. An optical fiber (not shown) is connected to transmit an optical signal through the window 35.
【０００４】この光電変換装置は光ファイバを用いた双
方向伝送方式による光通信を行う。図６において、発信
の場合、発光素子３１は駆動ＩＣ３２によって駆動さ
れ、信号光が光ファイバ内に放出される。受信の場合、
光ファイバを伝送してきた光は、受光素子２７によって
光電変換を行い、信号処理ＩＣ２８により受光電流を増
幅した後、後続のパソコン等のＩ／Ｏ装置（図示せず）
において判読可能な電気信号に変換される。なおこの例
は光ファイバによる双方向伝送方式として説明したが、
空間伝送による半二重方式（送信と受信を交互に繰り返
して信号を伝送する方式）でも同様の構成である。空間
伝送の場合、上記窓部３５の上部に半球状の凸レンズを
付加して光を集光することがよく行われる。また空間伝
送の半二重方式では発信と受信が交互に行われることか
ら、受信時における発光部からの光の影響が少なく、構
成を簡素化するために、受光素子、発光素子、及び、発
光素子の駆動回路と受光素子の増幅回路とを含む信号処
理ＩＣを、同一基板に搭載し透明樹脂により一体的に封
止することもよく行われている。This photoelectric conversion device performs optical communication by a bidirectional transmission system using an optical fiber. In FIG. 6, in the case of transmission, the light emitting element 31 is driven by the drive IC 32, and the signal light is emitted into the optical fiber. For receiving,
The light transmitted through the optical fiber is photoelectrically converted by the light receiving element 27, the received light current is amplified by the signal processing IC 28, and then the subsequent I / O device (not shown) such as a personal computer.
Converted into a readable electrical signal. Although this example was described as a bidirectional transmission system using optical fiber,
The same configuration is applied to the half-duplex method by space transmission (a method of transmitting signals by alternately repeating transmission and reception). In the case of spatial transmission, a hemispherical convex lens is often added to the upper portion of the window 35 to collect light. In addition, in the half-duplex method of space transmission, transmission and reception are performed alternately, so there is little influence of light from the light emitting unit during reception, and in order to simplify the configuration, the light receiving element, the light emitting element, and the light emitting element A signal processing IC including an element driving circuit and a light receiving element amplifying circuit is often mounted on the same substrate and integrally sealed with a transparent resin.
【０００５】[0005]
【発明が解決しようとする課題】図５及び図６に示す従
来の光電変換装置においてはいずれも発光素子（図５の
符号２０、図６の符号３１）とその駆動ＩＣ（図５の符
号１９、図６の符号３２）とが互いに近接して搭載され
ているため、発信時に発光素子２０及び３１から放出さ
れた光が、直接光としてそれぞれ駆動ＩＣ１９及び３２
に吸収される。そのため、駆動ＩＣ１９及び３２を構成
する半導体基板内のＮ層及びＰ層に多数の電子・正孔対
が発生し、過剰な電荷が蓄積されるため、駆動ＩＣ１９
及び３２の回路が機能しなくなり、動作が不安定になる
という問題があった。また、図５及び図６の例とは異な
る例として、発光素子（２７）と、受光素子の信号処理
ＩＣ（２８）とが近接して搭載されている場合には、送
信直後の受信時から過剰な電荷が放電されるまでの間、
信号処理回路が機能しなくなり、結果として受信側の復
活時間（信号処理回路の機能が復活するまでの時間）が
長くなるという問題もあった。この問題を解決するため
に、従来からの技術として、駆動ＩＣや信号処理ＩＣの
上部表面をアルミニウム等の薄膜で覆い、光の影響を低
減させている従来例もある。しかし、駆動ＩＣ及び信号
処理ＩＣの側面への直接光に対しては低減効果が少な
く、上記の問題を完全に解決するには至っていない。そ
のために、駆動ＩＣ及び信号処理ＩＣ全体を不透明樹脂
で被覆している例があるが、組立工程が複雑になり、結
果的にコストを増大させていた。また信号処理ＩＣに駆
動ＩＣを内蔵している場合は、発信時に受光回路部を電
気的に短絡状態にして過剰な電荷の蓄積を防ぐ等の工夫
が行われているが、回路的に複雑になりそのために信号
処理ＩＣのチップサイズが大きくなってコストが増大す
るなどの問題があった。In the conventional photoelectric conversion device shown in FIGS. 5 and 6, the light emitting element (reference numeral 20 in FIG. 5 and reference numeral 31 in FIG. 6) and its driving IC (reference numeral 19 in FIG. 5) are used. , 32 in FIG. 6 are mounted close to each other, the light emitted from the light emitting elements 20 and 31 at the time of transmission is directly emitted as the drive ICs 19 and 32, respectively.
Is absorbed by Therefore, a large number of electron-hole pairs are generated in the N layer and the P layer in the semiconductor substrate forming the driving ICs 19 and 32, and excessive charges are accumulated, so that the driving IC 19
There is a problem that the circuits of Nos. 32 and 32 do not function and the operation becomes unstable. Further, as an example different from the examples of FIGS. 5 and 6, when the light emitting element (27) and the signal processing IC (28) of the light receiving element are mounted close to each other, from the time of reception immediately after transmission, Until the excess charge is discharged
There is also a problem that the signal processing circuit does not function, and as a result, the recovery time on the receiving side (time until the function of the signal processing circuit is recovered) becomes long. In order to solve this problem, as a conventional technique, there is a conventional example in which the upper surface of a driving IC or a signal processing IC is covered with a thin film of aluminum or the like to reduce the influence of light. However, the direct light to the side surface of the drive IC and the signal processing IC has a small reduction effect, and the above problem has not been completely solved. For this reason, there is an example in which the entire drive IC and signal processing IC are covered with an opaque resin, but the assembly process becomes complicated, resulting in an increase in cost. In the case where the signal processing IC has a built-in drive IC, the light receiving circuit is electrically short-circuited at the time of transmission to prevent excessive accumulation of electric charge, but the circuit is complicated. Therefore, there is a problem that the chip size of the signal processing IC is increased and the cost is increased.
【０００６】本発明はかかる問題点を解決するためにな
されたもので製造コストを増大させることなく発光素子
の直接光による悪影響を完全に取り除くことのできる光
電変換装置を提供することを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide a photoelectric conversion device capable of completely eliminating the adverse effect of direct light of a light emitting element without increasing the manufacturing cost. .
【０００７】[0007]
【課題を解決するための手段】本発明に係る光電変換装
置は、発光素子とこれに関連するＩＣとの間に遮光物体
を設置して発光素子からの直接光が投射しないようにし
たものである。In the photoelectric conversion device according to the present invention, a light-shielding object is installed between a light emitting element and an IC associated therewith so that direct light from the light emitting element is not projected. is there.
【０００８】[0008]
【発明の実施の形態】本発明の光電変換装置は、発光素
子と、この発光素子と関連して設けられたＩＣとを互い
に近接して、実質的に同一平面を形成する基板上に設置
し、前記同一平面上の、前記発光素子と前記ＩＣとの間
の位置に遮光物体を設置し、装置全体を一体的に樹脂封
止した。BEST MODE FOR CARRYING OUT THE INVENTION In a photoelectric conversion device of the present invention, a light emitting element and an IC provided in association with the light emitting element are placed close to each other on a substrate that forms substantially the same plane. A light-shielding object was placed on the same plane between the light emitting element and the IC, and the entire device was integrally resin-sealed.
【０００９】例えば前記基板は平板状のリードフレーム
であり、前記遮光物体はこのリードフレームの一部の端
部を折り曲げて突起状に形成したものである。For example, the substrate is a flat lead frame, and the light-shielding object is formed by bending a part of the end of the lead frame to form a protrusion.
【００１０】また、このリードフレームの一部上に円環
状の突起部を形成して前記遮光物体とし、この突起部に
囲まれた平坦部上に前記発光素子を設置してもよい。Further, an annular protrusion may be formed on a part of the lead frame to form the light shielding object, and the light emitting element may be installed on a flat portion surrounded by the protrusion.
【００１１】また、前記遮光物体は無機材料により形成
しても良いし、回路上必要な電気部品を遮光物体として
利用しても良い。Further, the light shielding object may be formed of an inorganic material, or an electric component necessary for a circuit may be used as the light shielding object.
【００１２】[0012]
【実施例】次に、本発明における光電変換装置について
具体的に説明する。EXAMPLES Next, the photoelectric conversion device of the present invention will be specifically described.
【００１３】《実施例１》図１は光電変換装置を示す斜
視図であり、図２は図１のII-II線断面図である。図１
において、リードフレーム１〜７は銅または鉄系金属か
らなり、等しい厚さを有している。リードフレーム１上
にはシリコンホトダイオード等の受光素子９が、リード
フレーム６上にはＧａＡｌＡｓ等の発光素子１１が、ま
たリードフレーム４上には発光素子１１の駆動回路と受
光素子９の信号処理回路とを内蔵したＩＣ１０が、それ
ぞれ設けられ、金線１２によって所定の配線が施されて
いる。リードフレーム６上の、ＩＣ１０と発光素子１１
との間の位置には直方体に加工された無機材料、例えば
セラミックまたはシリコンからなる遮光物体１３が設け
られている。以上の各部は透明樹脂８によって一体的に
モールドされ、各々のリードフレーム１〜７の一部のみ
が透明樹脂８から露出している。図２において、各要素
（９、１０、１１及び１３）は導電性の銀ペースト１４
によって対応するリードフレーム１、４または６に接着
されている。リードフレーム１、４及び６は同一平面を
形成しているので、発光素子１１とＩＣ１０とは同一平
面を形成する基板（リードフレーム）上に設けられてい
ることになる。Example 1 FIG. 1 is a perspective view showing a photoelectric conversion device, and FIG. 2 is a sectional view taken along line II-II of FIG. FIG.
In, the lead frames 1 to 7 are made of copper or iron-based metal and have the same thickness. A light receiving element 9 such as a silicon photodiode is provided on the lead frame 1, a light emitting element 11 such as GaAlAs is provided on the lead frame 6, and a drive circuit of the light emitting element 11 and a signal processing circuit of the light receiving element 9 are provided on the lead frame 4. ICs 10 each having a built-in circuit are provided, and predetermined wiring is provided by gold wires 12. The IC 10 and the light emitting element 11 on the lead frame 6
A light shielding object 13 made of an inorganic material processed into a rectangular parallelepiped, for example, ceramic or silicon is provided at a position between and. The above respective parts are integrally molded with the transparent resin 8, and only a part of each lead frame 1 to 7 is exposed from the transparent resin 8. In FIG. 2, each element (9, 10, 11 and 13) is a conductive silver paste 14.
Is bonded to the corresponding lead frame 1, 4 or 6. Since the lead frames 1, 4 and 6 form the same plane, the light emitting element 11 and the IC 10 are provided on the substrate (lead frame) forming the same plane.
【００１４】図２に示すように、発光素子１１とＩＣ１
０との間の遮光物体１３は、発光素子１１の厚み以上の
高さ（図の上下方向）に設定されている。そのため、発
光素子１１からの直接光は遮光物体１３によって遮ら
れ、ＩＣ１０に直接入射することはない。従って、ＩＣ
１０の機能に異常を生じることもなく、発光素子１１の
駆動状態を安定させることができる。また、受信時の信
号処理の復活時間も最小限に維持できる。なお、この実
施例では遮光物体１３は回路構成部品ではないため、電
気的接続がなされていないが、回路上必要なチップタイ
プのセラミックコンデンサや抵抗等の電気部品を電気的
に接続し、かつ遮光物体として設置してもよい。As shown in FIG. 2, the light emitting element 11 and the IC 1
The light-shielding object 13 between 0 and 0 is set to a height (vertical direction in the drawing) that is equal to or larger than the thickness of the light emitting element 11. Therefore, the direct light from the light emitting element 11 is blocked by the light blocking object 13 and does not directly enter the IC 10. Therefore, IC
It is possible to stabilize the driving state of the light emitting element 11 without causing any abnormality in the function of 10. Further, the recovery time of signal processing at the time of reception can be kept to a minimum. In this embodiment, since the light-shielding object 13 is not a circuit component, it is not electrically connected. However, electric components such as chip-type ceramic capacitors and resistors required for the circuit are electrically connected and light-shielded. It may be installed as an object.
【００１５】《実施例２》図３の（ｂ）は実施例２にお
けるリードフレーム１、４及び６と、それらの上にそれ
ぞれ設けられた受光素子９、ＩＣ１０及び発光素子１１
の断面図であり、実施例１における図２に対応する図面
である（但し、透明樹脂８は図示を省略している）。図
３の（ａ）はその平面図である。実施例１において設け
られていた遮光物体１３を本実施例では設けていない
が、その代わりにリードフレーム４の端部を折り曲げ
て、ＩＣ１０が設置される面に対して上方向に突起部４
ｂを形成することにより同等の遮光機能をもたせてい
る。<Embodiment 2> FIG. 3B shows the lead frames 1, 4 and 6 in Embodiment 2, and the light receiving element 9, IC 10 and light emitting element 11 respectively provided thereon.
2 is a cross-sectional view corresponding to FIG. 2 in Example 1 (however, the transparent resin 8 is not shown). FIG. 3A is a plan view thereof. Although the light-shielding object 13 provided in the first embodiment is not provided in the present embodiment, the end portion of the lead frame 4 is bent instead, and the protruding portion 4 is provided in the upward direction with respect to the surface on which the IC 10 is installed.
By forming b, the same light shielding function is provided.
【００１６】《実施例３》図４の（ｂ）は実施例３にお
けるリードフレーム１、４及び６と、それらの上にそれ
ぞれ設けられた受光素子９、ＩＣ１０及び発光素子１１
の断面図であり、実施例１における図２に対応する図面
である（但し、透明樹脂８は図示を省略している）。図
４の（ａ）はその平面図である。実施例２と同様に、本
実施例でも実施例１において設けられていた遮光物体１
３を設けていないが、その代わりにリードフレーム６に
円環状の突起部６ｂをプレス加工によって形成し、それ
によって囲まれた平坦部６ｃに発光素子１１を搭載する
ことで、遮光を実現している。リードフレーム１及び４
の各裏面底部１ａ及び４ａと発光素子搭載部の裏面底部
６ａとは、組立工程を容易にするため、同一平面になる
よう加工されている。従って、発光素子１１とＩＣ１０
とが同一平面上に設けられていることについては実施例
１及び２と変わりがない。<< Embodiment 3 >> FIG. 4B shows the lead frames 1, 4 and 6 in Embodiment 3, and the light receiving element 9, IC 10 and light emitting element 11 respectively provided thereon.
2 is a cross-sectional view corresponding to FIG. 2 in Example 1 (however, the transparent resin 8 is not shown). FIG. 4A is a plan view thereof. Similar to the second embodiment, the light-shielding object 1 provided in the first embodiment also in this embodiment.
3 is not provided, but instead, an annular protrusion 6b is formed on the lead frame 6 by press working, and the light emitting element 11 is mounted on the flat portion 6c surrounded by this to realize light shielding. There is. Lead frames 1 and 4
The respective bottom bottom portions 1a and 4a and the bottom bottom portion 6a of the light emitting element mounting portion are processed to be flush with each other in order to facilitate the assembly process. Therefore, the light emitting element 11 and the IC 10
The fact that and are provided on the same plane is the same as in the first and second embodiments.
【００１７】上記第１〜第３の各実施例において、発光
素子１１、受光素子９及びＩＣ１０を搭載した基板がリ
ードフレームである場合について説明したが、基板はリ
ードフレーム以外であっても良い。例えば基板として紙
・ガラスエポキシ樹脂などのプリント基板、セラミック
基板などを採用し、同様な遮光部を形成してもよい。ま
た、上記各実施例では発光素子１１の駆動回路と受光素
子９の信号処理回路とを内蔵したＩＣ１０を用いる場合
について説明したが、発光素子１１の駆動ＩＣと受光素
子９の信号処理ＩＣとは別々に構成されてもよい。ま
た、本発明は発光素子１１とその駆動ＩＣを一体的に構
成した光電変換装置にも適用されることはいうまでもな
い。In each of the first to third embodiments, the case where the substrate on which the light emitting element 11, the light receiving element 9 and the IC 10 are mounted is a lead frame has been described, but the substrate may be other than the lead frame. For example, a printed circuit board made of paper, glass epoxy resin, or the like, a ceramic circuit board, or the like may be adopted as the circuit board, and the same light shielding portion may be formed. Further, in each of the above-described embodiments, the case where the IC 10 having the drive circuit of the light emitting element 11 and the signal processing circuit of the light receiving element 9 is used has been described, but the drive IC of the light emitting element 11 and the signal processing IC of the light receiving element 9 are described. It may be configured separately. Further, it goes without saying that the present invention is also applied to a photoelectric conversion device in which the light emitting element 11 and its driving IC are integrally configured.
【００１８】[0018]
【発明の効果】本発明は以下に記載されるような効果を
奏する。The present invention has the following effects.
【００１９】発光素子とこれに関連するＩＣとの間に遮
光物体を設置することにより、発光素子からの直接光が
ＩＣに入射することを防止するので、発光素子の駆動状
態を安定させることができ、また受信時の信号処理の復
活時間を短縮できる。また従来必要であったところの、
直接光の入射に起因する電荷の過剰な蓄積を防ぐための
回路構成が不要になるので、ＩＣ回路を簡素化できてチ
ップサイズを縮小できること、及びＩＣに不透明樹脂を
被覆する工程が不要となることから、低コスト化に貢献
できる。By installing a light-shielding object between the light emitting element and the IC associated therewith, direct light from the light emitting element is prevented from entering the IC, so that the driving state of the light emitting element can be stabilized. In addition, the recovery time of signal processing at the time of reception can be shortened. In addition, where it was necessary in the past,
A circuit configuration for preventing excessive accumulation of electric charges due to direct incidence of light is not required, so that the IC circuit can be simplified and the chip size can be reduced, and the step of coating the IC with an opaque resin is unnecessary. Therefore, it can contribute to cost reduction.
【００２０】また、リードフレームの一部の端部を折り
曲げて突起を形成したものを遮光物体とすれば簡便に遮
光物体を設置できる。Further, if the light-shielding object is formed by bending a part of the end of the lead frame to form a protrusion, the light-shielding object can be easily installed.
【００２１】また、リードフレームの一部上に遮光物体
としての円環状の突起部を形成し、その突起部に囲まれ
た平坦部上に発光素子を設置すれば簡便に遮光を実現で
き、しかもこの平坦部の裏面はリードフレームの他の部
分の裏面と同一平面上にあるので組立工程が容易であ
る。Further, by forming an annular protrusion as a light-shielding object on a part of the lead frame and installing the light emitting element on the flat portion surrounded by the protrusion, light can be easily shielded. Since the back surface of this flat portion is on the same plane as the back surface of the other portion of the lead frame, the assembly process is easy.
【００２２】また、遮光物体を無機材料によって形成す
れば所望の形状に加工できる。If the light shielding object is made of an inorganic material, it can be processed into a desired shape.
【００２３】また、電気部品を遮光物体として利用すれ
ば別途遮光物体を設ける必要がないので部品の数を最小
限個数にすることができる。Further, when the electric parts are used as the light-shielding object, it is not necessary to separately provide the light-shielding object, so that the number of parts can be minimized.
【図１】実施例１による光電変換装置の斜視図である。FIG. 1 is a perspective view of a photoelectric conversion device according to a first embodiment.
【図２】図１のII-II線の断面図である。FIG. 2 is a sectional view taken along line II-II in FIG.
【図３】実施例２による光電変換装置の平面図と断面図
である。FIG. 3 is a plan view and a sectional view of a photoelectric conversion device according to a second embodiment.
【図４】実施例３による光電変換装置の平面図と断面図
である。FIG. 4 is a plan view and a cross-sectional view of a photoelectric conversion device according to a third embodiment.
【図５】従来の光電変換装置を示す平面図である。FIG. 5 is a plan view showing a conventional photoelectric conversion device.
【図６】従来の他の光電変換装置を示す断面図である。FIG. 6 is a cross-sectional view showing another conventional photoelectric conversion device.
1,2,3,4,5,6,7 リードフレーム 1a,4a,6a 裏面底部 ８ 透明樹脂 ９ 受光素子 １０ ＩＣ １１ 発光素子 １３ 遮光物体 1,2,3,4,5,6,7 Lead frame 1a, 4a, 6a Bottom surface of back surface 8 Transparent resin 9 Light receiving element 10 IC 11 Light emitting element 13 Light shielding object
Claims (5)
と関連して設けられたＩＣとを互いに近接して、実質的
に同一平面を形成する基板上に設置してなる光電変換装
置において、 前記同一平面上の、前記発光素子と前記ＩＣとの間の位
置に遮光物体を設置し、装置全体を一体的に樹脂封止し
たことを特徴とする光電変換装置。1. A photoelectric conversion device in which at least a light emitting element and an IC provided in association with the light emitting element are placed close to each other on a substrate forming substantially the same plane, wherein: A photoelectric conversion device, wherein a light-shielding object is installed on the same plane between the light emitting element and the IC, and the entire device is integrally sealed with resin.
り、前記遮光物体はこのリードフレームの一部の端部を
折り曲げて突起状に形成したものであることを特徴とす
る請求項１に記載の光電変換装置。2. The substrate is a flat lead frame, and the light shielding object is formed by bending a part of an end of the lead frame to form a protrusion. Photoelectric conversion device.
り、このリードフレームの一部上に円環状の突起部を形
成して前記遮光物体とし、この突起部に囲まれた平坦部
上に前記発光素子を設置したことを特徴とする請求項１
に記載の光電変換装置。3. The substrate is a flat lead frame, and an annular protrusion is formed on a part of the lead frame to form the light shielding object, and the flat portion surrounded by the protrusion is formed on the flat portion. The light emitting element is installed, The claim 1 characterized by the above-mentioned.
The photoelectric conversion device described in 1.
無機材料からなることを特徴とする請求項１に記載の光
電変換装置。4. The photoelectric conversion device according to claim 1, wherein the light shielding object is made of an inorganic material processed into a predetermined shape.
する電気部品であることを特徴とする請求項１に記載の
光電変換装置。5. The photoelectric conversion device according to claim 1, wherein the light-shielding object is an electric component that constitutes the photoelectric conversion device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33343795A JPH09181339A (en) | 1995-12-21 | 1995-12-21 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33343795A JPH09181339A (en) | 1995-12-21 | 1995-12-21 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09181339A true JPH09181339A (en) | 1997-07-11 |
Family
ID=18266101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33343795A Pending JPH09181339A (en) | 1995-12-21 | 1995-12-21 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09181339A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101943601A (en) * | 2009-07-06 | 2011-01-12 | 株式会社电装 | Optical detection device |
| JP2020141018A (en) * | 2019-02-27 | 2020-09-03 | 富士ゼロックス株式会社 | Light-emitting apparatus, light-emitting device, optical device, and information processing device |
| JP2021034674A (en) * | 2019-08-29 | 2021-03-01 | キヤノン株式会社 | Optical sensor |
-
1995
- 1995-12-21 JP JP33343795A patent/JPH09181339A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101943601A (en) * | 2009-07-06 | 2011-01-12 | 株式会社电装 | Optical detection device |
| JP2011013172A (en) * | 2009-07-06 | 2011-01-20 | Denso Corp | Photodetector |
| US8299434B2 (en) | 2009-07-06 | 2012-10-30 | Denso Corporation | Light detecting device |
| JP2020141018A (en) * | 2019-02-27 | 2020-09-03 | 富士ゼロックス株式会社 | Light-emitting apparatus, light-emitting device, optical device, and information processing device |
| JP2021034674A (en) * | 2019-08-29 | 2021-03-01 | キヤノン株式会社 | Optical sensor |
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