KR960002617A - 반도체 제조동안 실리콘 웨이퍼의 금속 불순물의 감소방법 - Google Patents

반도체 제조동안 실리콘 웨이퍼의 금속 불순물의 감소방법 Download PDF

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Publication number
KR960002617A
KR960002617A KR1019950017406A KR19950017406A KR960002617A KR 960002617 A KR960002617 A KR 960002617A KR 1019950017406 A KR1019950017406 A KR 1019950017406A KR 19950017406 A KR19950017406 A KR 19950017406A KR 960002617 A KR960002617 A KR 960002617A
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KR
South Korea
Prior art keywords
concentration
modified
solution
dequest
formulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019950017406A
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English (en)
Korean (ko)
Inventor
슐츠 페터
Original Assignee
알베르트 발도르프·롤프 옴케
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 알베르트 발도르프·롤프 옴케, 지멘스 악티엔게젤샤프트 filed Critical 알베르트 발도르프·롤프 옴케
Publication of KR960002617A publication Critical patent/KR960002617A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
KR1019950017406A 1994-06-27 1995-06-26 반도체 제조동안 실리콘 웨이퍼의 금속 불순물의 감소방법 Withdrawn KR960002617A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/266,279 US5637151A (en) 1994-06-27 1994-06-27 Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US08/266,279 1994-06-27

Publications (1)

Publication Number Publication Date
KR960002617A true KR960002617A (ko) 1996-01-26

Family

ID=23013918

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950017406A Withdrawn KR960002617A (ko) 1994-06-27 1995-06-26 반도체 제조동안 실리콘 웨이퍼의 금속 불순물의 감소방법

Country Status (5)

Country Link
US (1) US5637151A (https=)
EP (1) EP0690482A3 (https=)
JP (1) JPH0831784A (https=)
KR (1) KR960002617A (https=)
TW (1) TW269050B (https=)

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US6383723B1 (en) * 1998-08-28 2002-05-07 Micron Technology, Inc. Method to clean substrate and improve photoresist profile
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US6162302A (en) * 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
US6340395B1 (en) * 2000-01-18 2002-01-22 Advanced Micro Devices, Inc. Salsa clean process
US6890853B2 (en) * 2000-04-25 2005-05-10 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
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US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
JP2006508521A (ja) * 2002-02-15 2006-03-09 東京エレクトロン株式会社 溶剤浴と超臨界ｃｏ２を用いたレジストの乾燥
CN1296771C (zh) 2002-03-04 2007-01-24 东京毅力科创株式会社 在晶片处理中低电介质材料的钝化方法
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US20040002430A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
KR100489657B1 (ko) * 2003-02-21 2005-05-17 삼성전자주식회사 반도체 장치의 패턴 형성 방법 및 이를 이용한 반도체장치의 제조방법
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7041562B2 (en) * 2003-10-29 2006-05-09 Freescale Semiconductor, Inc. Method for forming multiple gate oxide thickness utilizing ashing and cleaning
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
CN1797221B (zh) * 2004-12-30 2010-05-12 鸿富锦精密工业（深圳）有限公司 湿蚀刻设备及湿蚀刻方法
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
FR2884647B1 (fr) * 2005-04-15 2008-02-22 Soitec Silicon On Insulator Traitement de plaques de semi-conducteurs
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7657390B2 (en) 2005-11-02 2010-02-02 Applied Materials, Inc. Reclaiming substrates having defects and contaminants
US20100062164A1 (en) 2008-09-08 2010-03-11 Lam Research Methods and Solutions for Preventing the Formation of Metal Particulate Defect Matter Upon a Substrate After a Plating Process
CN117862112B (zh) * 2024-01-08 2025-06-20 山东有研半导体材料有限公司 一种半导体硅抛光片的去蜡清洗工艺

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US4264374A (en) * 1978-09-25 1981-04-28 International Business Machines Corporation Cleaning process for p-type silicon surface
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DE3822350A1 (de) * 1988-07-01 1990-01-04 Siemens Ag Verfahren zum entfernen von metall-verunreinigungen auf halbleiterkristalloberflaechen
US4913823A (en) * 1988-10-14 1990-04-03 The Mogul Corporation Process for dissolving and removing scale from aqueous systems
DE4002327A1 (de) * 1990-01-26 1991-08-01 Wacker Chemitronic Verfahren zur nasschemischen behandlung von halbleiteroberflaechen und loesung zu seiner durchfuehrung
US4985228A (en) * 1990-07-17 1991-01-15 E. I. Du Pont De Nemours And Company Purification of hydrogen peroxide
JPH04107922A (ja) * 1990-08-29 1992-04-09 Fujitsu Ltd 半導体洗浄液およびそれを用いた洗浄方法
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JP3075290B2 (ja) * 1991-02-28 2000-08-14 三菱瓦斯化学株式会社 半導体基板の洗浄液
US5213622A (en) * 1991-10-11 1993-05-25 Air Products And Chemicals, Inc. Cleaning agents for fabricating integrated circuits and a process for using the same

Also Published As

Publication number Publication date
EP0690482A2 (en) 1996-01-03
JPH0831784A (ja) 1996-02-02
US5637151A (en) 1997-06-10
TW269050B (https=) 1996-01-21
EP0690482A3 (en) 1996-04-17

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