KR950700598A - PZT, PLZT, 및 플라티늄 층으로부터 SiO2층을 분리하기 위한 개선된 방법(IMPROVED METHOD FOR ISOLATING SiO2 LAYERS FROM PZT, PLZT, AND PLATINUM LAYERS) - Google Patents

PZT, PLZT, 및 플라티늄 층으로부터 SiO2층을 분리하기 위한 개선된 방법(IMPROVED METHOD FOR ISOLATING SiO2 LAYERS FROM PZT, PLZT, AND PLATINUM LAYERS)

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Publication number
KR950700598A
KR950700598A KR1019940703073A KR19940703073A KR950700598A KR 950700598 A KR950700598 A KR 950700598A KR 1019940703073 A KR1019940703073 A KR 1019940703073A KR 19940703073 A KR19940703073 A KR 19940703073A KR 950700598 A KR950700598 A KR 950700598A
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KR
South Korea
Prior art keywords
layers
plzt
pzt
improved method
platinum
Prior art date
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Withdrawn
Application number
KR1019940703073A
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English (en)
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR950700598A publication Critical patent/KR950700598A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H3/00—Mechanisms for operating contacts
    • H01H3/02—Operating parts, i.e. for operating driving mechanism by a mechanical force external to the switch
    • H01H3/14—Operating parts, i.e. for operating driving mechanism by a mechanical force external to the switch adapted for operation by a part of the human body other than the hand, e.g. by foot
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
KR1019940703073A 1992-03-03 1994-09-02 PZT, PLZT, 및 플라티늄 층으로부터 SiO2층을 분리하기 위한 개선된 방법(IMPROVED METHOD FOR ISOLATING SiO2 LAYERS FROM PZT, PLZT, AND PLATINUM LAYERS) Withdrawn KR950700598A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/845,064 US5212620A (en) 1992-03-03 1992-03-03 Method for isolating SiO2 layers from PZT, PLZT, and platinum layers
PCT/US1993/001469 WO1993018530A1 (en) 1992-03-03 1993-02-18 Improved method for isolating sio2 layers from pzt, plzt, and platinum layers

Publications (1)

Publication Number Publication Date
KR950700598A true KR950700598A (ko) 1995-01-16

Family

ID=25294307

Family Applications (2)

Application Number Title Priority Date Filing Date
KR940703073A Expired - Fee Related KR100300681B1 (enExample) 1992-03-03 1994-09-02
KR1019940703073A Withdrawn KR950700598A (ko) 1992-03-03 1994-09-02 PZT, PLZT, 및 플라티늄 층으로부터 SiO2층을 분리하기 위한 개선된 방법(IMPROVED METHOD FOR ISOLATING SiO2 LAYERS FROM PZT, PLZT, AND PLATINUM LAYERS)

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR940703073A Expired - Fee Related KR100300681B1 (enExample) 1992-03-03 1994-09-02

Country Status (8)

Country Link
US (1) US5212620A (enExample)
EP (1) EP0629312B1 (enExample)
JP (1) JPH07504783A (enExample)
KR (2) KR100300681B1 (enExample)
AU (1) AU668925B2 (enExample)
CA (1) CA2129838C (enExample)
DE (1) DE69318294T2 (enExample)
WO (1) WO1993018530A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2884917B2 (ja) * 1992-06-08 1999-04-19 日本電気株式会社 薄膜キャパシタおよび集積回路
US5514484A (en) * 1992-11-05 1996-05-07 Fuji Xerox Co., Ltd. Oriented ferroelectric thin film
DE69431971T2 (de) * 1993-03-25 2003-11-27 Matsushita Electric Industrial Co., Ltd. Dünnschichtkondensator und Herstellungsverfahren
JP3323607B2 (ja) 1993-11-12 2002-09-09 株式会社日立製作所 半導体記憶装置の製造方法
US5645976A (en) * 1993-10-14 1997-07-08 Matsushita Electronics Corporation Capacitor apparatus and method of manufacture of same
JP3113173B2 (ja) * 1995-06-05 2000-11-27 シャープ株式会社 不揮発性ランダムアクセスメモリ及びその製造方法
US5753945A (en) * 1995-06-29 1998-05-19 Northern Telecom Limited Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer
DE19605668C1 (de) * 1996-02-15 1997-03-27 Siemens Ag Ferroelektrisches Bauelement und Verfahren zur Herstellung
DE19630110C2 (de) * 1996-07-25 1998-11-19 Siemens Ag Schichtaufbau mit einer ferroelektrischen Schicht und Herstellverfahren
US5864932A (en) * 1996-08-20 1999-02-02 Ramtron International Corporation Partially or completely encapsulated top electrode of a ferroelectric capacitor
US5902131A (en) * 1997-05-09 1999-05-11 Ramtron International Corporation Dual-level metalization method for integrated circuit ferroelectric devices
TW406317B (en) * 1997-06-27 2000-09-21 Siemens Ag Method to produce a barrier-layer in a semiconductor-body and semiconductor component with such a barrier-layer
KR100269306B1 (ko) * 1997-07-31 2000-10-16 윤종용 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법
US5923970A (en) * 1997-11-20 1999-07-13 Advanced Technology Materials, Inc. Method of fabricating a ferrolelectric capacitor with a graded barrier layer structure
KR100506513B1 (ko) * 1997-12-27 2007-11-02 주식회사 하이닉스반도체 강유전체 캐패시터 형성 방법
US6509601B1 (en) 1998-07-31 2003-01-21 Samsung Electronics Co., Ltd. Semiconductor memory device having capacitor protection layer and method for manufacturing the same
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
US6642567B1 (en) 2000-08-31 2003-11-04 Micron Technology, Inc. Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
KR20020049875A (ko) * 2000-12-20 2002-06-26 윤종용 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법
JP2009158956A (ja) * 2007-12-05 2009-07-16 Rohm Co Ltd 半導体装置及び半導体装置の製造方法
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
US5070026A (en) * 1989-06-26 1991-12-03 Spire Corporation Process of making a ferroelectric electronic component and product
US5003428A (en) * 1989-07-17 1991-03-26 National Semiconductor Corporation Electrodes for ceramic oxide capacitors
DE4041271C2 (de) * 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Halbleitervorrichtung mit einem ferroelektrischen Kondensator
NL9000602A (nl) * 1990-03-16 1991-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum.

Also Published As

Publication number Publication date
EP0629312B1 (en) 1998-04-29
DE69318294D1 (de) 1998-06-04
DE69318294T2 (de) 1998-11-26
AU668925B2 (en) 1996-05-23
EP0629312A1 (en) 1994-12-21
WO1993018530A1 (en) 1993-09-16
AU3774593A (en) 1993-10-05
JPH07504783A (ja) 1995-05-25
CA2129838C (en) 1999-10-26
EP0629312A4 (en) 1995-04-12
CA2129838A1 (en) 1993-09-16
KR100300681B1 (enExample) 2001-10-22
US5212620A (en) 1993-05-18

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