KR950029380A - Polysilicon Film Deposition Method Using Plasma Chemical Vapor Deposition - Google Patents
Polysilicon Film Deposition Method Using Plasma Chemical Vapor Deposition Download PDFInfo
- Publication number
- KR950029380A KR950029380A KR1019940007283A KR19940007283A KR950029380A KR 950029380 A KR950029380 A KR 950029380A KR 1019940007283 A KR1019940007283 A KR 1019940007283A KR 19940007283 A KR19940007283 A KR 19940007283A KR 950029380 A KR950029380 A KR 950029380A
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- KR
- South Korea
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- polysilicon film
- chemical vapor
- vapor deposition
- plasma chemical
- thin film
- Prior art date
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Abstract
본 발명은 박막트랜지스터(Thin Film Transistor)의 채널용 다결정실리콘막 형성방법에 관한 것으로, 특히 플라즈마 화학기상증착(PECVD)법을 이용한 다결정실리콘막 증착방법에 있어서, 예정된 채널형성 영역에 플라즈마 화학기상증착법을 이용한 등축구조의 다결정실리콘막을 형성하는 것을 특징으로 함으로써 본 발명은 결정입자의 크기가 크면서 입자간 균일도 또한 높아 결정입자경계의 전위장벽이 낮아지고 캐리어 이동도가 높아져 높은 전도 특성을 가지며 결국 결정입자경계에서 누설전류가 감소하여 박막트랜지스터의 중요한 특성중의 하나인 Ion/Ioff비를 크게 향상시킴으로써 박막트랜지스터 소자의 품질특성을 높일 수 있는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a polysilicon film for a channel of a thin film transistor, and more particularly, to a method for depositing a polysilicon film using a plasma chemical vapor deposition (PECVD) method. The present invention is characterized in that the polycrystalline silicon film having an equiaxed structure is formed using the same crystal structure, so that the grain size is large, the uniformity between particles is high, the potential barrier of the grain boundary is low, the carrier mobility is high, and the crystal has high conductivity. The leakage current is reduced in the grain boundary, and the I on / I off ratio, which is one of the important characteristics of the thin film transistor, is greatly improved, thereby improving the quality characteristics of the thin film transistor device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도는 종래의 저온 LPCVD 증착후 고상성장시킨 다결정실리콘막의 결정입자 구조를 나타내는 도면, 제1B도는 종래의 비정질실리콘막 증착후 고상성장시킨 다결정실리콘막의 결정입자 구조도, 제2도는 본 발명에 따른 플라즈마 화학기상증착법으로 형성된 다결정실리콘막의 결정입자 구조도.FIG. 1A is a view showing the crystal grain structure of a polycrystalline silicon film grown in solid state after low temperature LPCVD deposition, FIG. 1B is a crystal grain structure of a polycrystalline silicon film grown in solid state after deposition of a conventional amorphous silicon film, and FIG. Crystal grain structure diagram of a polysilicon film formed by plasma chemical vapor deposition.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940007283A KR950029380A (en) | 1994-04-07 | 1994-04-07 | Polysilicon Film Deposition Method Using Plasma Chemical Vapor Deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940007283A KR950029380A (en) | 1994-04-07 | 1994-04-07 | Polysilicon Film Deposition Method Using Plasma Chemical Vapor Deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950029380A true KR950029380A (en) | 1995-11-22 |
Family
ID=66677722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940007283A KR950029380A (en) | 1994-04-07 | 1994-04-07 | Polysilicon Film Deposition Method Using Plasma Chemical Vapor Deposition |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950029380A (en) |
-
1994
- 1994-04-07 KR KR1019940007283A patent/KR950029380A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |