KR970054386A - Manufacturing Method of Semiconductor Device - Google Patents
Manufacturing Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970054386A KR970054386A KR1019950055684A KR19950055684A KR970054386A KR 970054386 A KR970054386 A KR 970054386A KR 1019950055684 A KR1019950055684 A KR 1019950055684A KR 19950055684 A KR19950055684 A KR 19950055684A KR 970054386 A KR970054386 A KR 970054386A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon film
- doped polysilicon
- semiconductor device
- gate
- film
- Prior art date
Links
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 반도체 장치의 게이트의 막질로서 도핑된 폴리 실리콘막을 사용하여 게이트를 형성하는 방법에 관한 것으로, 도핑된 폴리 실리콘막은 570∼680℃의 온도에서 실시되어 증착 속도가 결정의 성장속도보다 작은 속도로 진행되기 때문에, 상기의 도핑된 폴리 실리콘막은 완전히 다결정 구조를 가지고, 열적 변화에 대한 압력의 변화 및 물리적 특성이 일반적 폴리 실리콘막과 같은 특성을 나타낸다. 또한, 도핑된 폴리 실리콘막을 폴리 실리콘막 대신에 사용하면, 반도체 소자의 제조 과정이 단순해질 뿐만 아니라 박막에 대한 시트 저항의 조절이 매우 용이하기 때문에 게이트의 전기적 특성을 조절하는 데에 많은 이점을 가질 수 있다.The present invention relates to a method of forming a gate using a doped polysilicon film as a film quality of a gate of a semiconductor device, wherein the doped polysilicon film is carried out at a temperature of 570 to 680 ° C so that the deposition rate is smaller than the crystal growth rate. Since the doped polysilicon film has a completely polycrystalline structure, the change in pressure and physical properties with respect to thermal change exhibit the same characteristics as the general polysilicon film. In addition, the use of the doped polysilicon film in place of the polysilicon film not only simplifies the manufacturing process of the semiconductor device but also makes it very easy to adjust the sheet resistance to the thin film, and thus has many advantages in controlling the electrical characteristics of the gate. Can be.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2C는 본 발명의 실시예에 따라 반도체 장치를 제조하는 공정들을 보여주는 단면도.2A through 2C are cross-sectional views illustrating processes for manufacturing a semiconductor device in accordance with an embodiment of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950055684A KR970054386A (en) | 1995-12-23 | 1995-12-23 | Manufacturing Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950055684A KR970054386A (en) | 1995-12-23 | 1995-12-23 | Manufacturing Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970054386A true KR970054386A (en) | 1997-07-31 |
Family
ID=66617860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950055684A KR970054386A (en) | 1995-12-23 | 1995-12-23 | Manufacturing Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970054386A (en) |
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1995
- 1995-12-23 KR KR1019950055684A patent/KR970054386A/en not_active IP Right Cessation
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SUBM | Submission of document of abandonment before or after decision of registration |