KR950020500A - 다중 데이타 면 광학 데이타 기억 장치 - Google Patents
다중 데이타 면 광학 데이타 기억 장치 Download PDFInfo
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- KR950020500A KR950020500A KR1019940034540A KR19940034540A KR950020500A KR 950020500 A KR950020500 A KR 950020500A KR 1019940034540 A KR1019940034540 A KR 1019940034540A KR 19940034540 A KR19940034540 A KR 19940034540A KR 950020500 A KR950020500 A KR 950020500A
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Abstract
광학 데이타 기억장치는 다중 데이타 면 매체 및 광학 헤드를 포함한다. 이 매체는 광 투광성 매체에 의해 분리되는 다수의 기판을 포함한다. 데이타 면들은 기판 면상에 위치 설정된다. 반도체 물질층은 각 데이타 면상에 피착된다. 반도체층의 두께는 각 데이타 면에 반사량을 결정한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 광학 데이타 기억 장치의 개략적인 다이어그램,
제5도는 본 발명의 일실시예에 따른 광 퍼센테이지 대 층 두께를 나타내는 그래프,
제9도는 본 발명의 채널 회로의 회로 다이어그램,
제10도는 본 발명의 제어기 회로의 개략적인 다이어그램.
Claims (33)
- 반도체 물질층이 피착되어 있으며, 기록된 데이타를 기억하기 위한 제1데이타 면을 가진 제1의 방사 투과성 부재(first radiation transmissive member), 기록된 데이타를 기억하기 위한 제2데이타 면을 가진 제2부재, 공간 이격된 관계로 제1 및 제2데이타 면을 지지하기 위한 수단, 매체의 제1측면으로부터의 방사빔이 제1 또는 제2데이타 면 중 어느 한 면에 집속되도록 상기 제1데이타 면과 제2데이타 면간에 위치 설정된 투과성 매체(radiation transmissive medium)를 구비하는 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 방사 투과성 매체는 고체의 투명 물질인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 방사 투과성 매체는 고체의 투명 물질인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 제2데이타 면은 그 위에 피착되는 반도체 물질층을 갖는 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 데이타 면들은 ROM 데이타 면인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 C,Si,Ge,Sn,Pb로 구성되는 그룹으로부터의 적어도 하나의 원소로 이루어지는 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 아몰퍼스 실리콘인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 AxB1-x인데, 여기서 A는 B,Al,Ga,In 및 Tl로 이루어진 그룹으로부터의 적어도 하나의 원소이고, B는 N,P,As,Sb 및 Bi로 이루어진 그룹으로부터의 적어도 하나의 원소이며, 그리고 0<X<1인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 GaAs인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 AlAs인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 AiP인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 AlSb인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 GaP인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 GaN인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 GaSb인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 InP인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 InAs인 것을 특징으로 하는 광학 데이타 기억 매체.
- 제1항에 있어서, 상기 반도체 물질은 InSb인 것을 특징으로 하는 광학 데이타 기억 매체.
- 방사원, 반도체 물질층이 피착되어 있고, 기록된 데이타를 기억하기 위한 제1데이타 면을 가진 제1방사 투과성 부재, 기록된 데이타를 기억하기 위한 제2데이타 면을 가진 제2부재, 공간 이격된 관계로 상기 제1 및 제2데이타 면을 지지하기 위한 수단, 매체의 제1측면으로부터 방사빔이 제1 또는 제2데이타 면 중 어느 한 면에 집속되도록 상기 제1데이타 면과 상기 제2데이타 면 중 어느 한 면에 집속되도록 상기 제1데이타 면과 상기 제2데이타 면 간의 위치 설정된 방사 투과성 매체를 구비하는 광학매체, 상기 방사원으로부터의 방사빔을 상기 광학매체의 데이타 면중 하나로 지향하기 위한 광학 투과 수단, 상기 광학 매체로부터 반사된 방사 빔을 수신하고 이에 응답하여 데이타 신호를 제공하기 위한 광학 수신 수단을 구비하는 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 방사 투과성 매체는 공기인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 방사 투과성 매체는 고체의 투명 물질인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 제2데이타 면은 그 위에 피착되는 반도체 물질층을 갖는 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 데이타 면은 ROM 데이타 면인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 C,Si,Ge,Sn,Pb로 구성되는 그룹으로부터의 적어도 하나의 원소로 이루어지는 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 아몰퍼스 실리콘인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 AxB1-x인데, 여기서 A는 B,Al,Ga,In 및 Tl으로 구성되는 그룹으로부터의 적어도 하나의 원소이고, B는 N,P,As,Sb 및 Bi로 구성되는 그룹으로부터의 적어도 하나의 원소이며, 그리고 0<X<1인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 GaAs인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 AlAs인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 AlP인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 AlSb인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 GaB인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 GaN인 것을 특징으로 하는 광학 데이타 기억 장치.
- 제19항에 있어서, 상기 반도체 물질은 GaSb인 것을 특징으로 하는 광학 데이타 기억 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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US16760693A | 1993-12-15 | 1993-12-15 | |
US8/167,606 | 1993-12-15 | ||
US08/167.606 | 1993-12-15 |
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KR950020500A true KR950020500A (ko) | 1995-07-24 |
KR0153025B1 KR0153025B1 (ko) | 1998-12-15 |
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KR1019940034540A KR0153025B1 (ko) | 1993-12-15 | 1994-12-13 | 다중 데이타 면 광학 데이타 저장 장치 |
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EP (1) | EP0658885B1 (ko) |
JP (3) | JP3166893B2 (ko) |
KR (1) | KR0153025B1 (ko) |
CN (1) | CN1080425C (ko) |
CA (1) | CA2133246C (ko) |
DE (1) | DE69434171T2 (ko) |
MY (1) | MY115161A (ko) |
SG (1) | SG45166A1 (ko) |
TW (1) | TW273616B (ko) |
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JPH08235641A (ja) * | 1995-02-27 | 1996-09-13 | Sony Corp | 光学記録媒体とその製法 |
US5555537A (en) * | 1995-06-30 | 1996-09-10 | International Business Machines Corporation | Optical data storage system with multiple write-once phase-change recording layers |
US5965228A (en) * | 1995-09-01 | 1999-10-12 | Balzers Aktiengesellschaft | Information carrier, method for producing same |
US6893543B1 (en) * | 1995-09-01 | 2005-05-17 | Unaxis Balzers Ag | Information carrier and method for producing the same |
JP2002056574A (ja) * | 2000-08-04 | 2002-02-22 | Pioneer Electronic Corp | 光記録媒体 |
KR101120025B1 (ko) * | 2005-03-10 | 2012-03-15 | 삼성전자주식회사 | 다층 기록 매체 및 그 제조 방법 |
JP4995611B2 (ja) * | 2007-03-28 | 2012-08-08 | Tdk株式会社 | 情報記録方法、情報記録装置 |
JP2008243306A (ja) * | 2007-03-28 | 2008-10-09 | Tdk Corp | 情報記録方法、情報記録装置 |
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NL7803069A (nl) * | 1978-03-22 | 1979-09-25 | Philips Nv | Meerlaags informatieschijf. |
US4578788A (en) * | 1983-06-02 | 1986-03-25 | International Business Machines Corporation | High performance optical storage medium with separate mechanical servo tracks embedded within the medium |
CN85101886B (zh) * | 1985-04-01 | 1988-03-30 | 菲利浦光灯制造公司 | 光可读存储盘 |
JPH0823941B2 (ja) * | 1988-11-08 | 1996-03-06 | パイオニア株式会社 | 光学式情報記録担体及びその製造方法 |
JPH0354740A (ja) * | 1989-07-24 | 1991-03-08 | Matsushita Electric Ind Co Ltd | 光学情報記録部材および光学情報記録再生装置 |
JP2781421B2 (ja) * | 1989-08-31 | 1998-07-30 | 旭化成工業株式会社 | 光記録媒体の製造方法 |
JP2800431B2 (ja) * | 1991-01-22 | 1998-09-21 | 日本電気株式会社 | 光学情報記録媒体 |
US5255262A (en) * | 1991-06-04 | 1993-10-19 | International Business Machines Corporation | Multiple data surface optical data storage system with transmissive data surfaces |
CN1029805C (zh) * | 1991-06-04 | 1995-09-20 | 国际商业机器公司 | 多数据表面数据存贮系统和方法 |
US5202875A (en) * | 1991-06-04 | 1993-04-13 | International Business Machines Corporation | Multiple data surface optical data storage system |
JP3080739B2 (ja) * | 1991-12-20 | 2000-08-28 | 日本電気株式会社 | 光学的情報記録媒体および光学的情報記録消去再生方法 |
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1994
- 1994-08-05 TW TW083107207A patent/TW273616B/zh not_active IP Right Cessation
- 1994-09-29 CA CA002133246A patent/CA2133246C/en not_active Expired - Lifetime
- 1994-10-31 JP JP26690694A patent/JP3166893B2/ja not_active Expired - Lifetime
- 1994-11-25 MY MYPI94003146A patent/MY115161A/en unknown
- 1994-12-08 DE DE69434171T patent/DE69434171T2/de not_active Expired - Lifetime
- 1994-12-08 SG SG1996000850A patent/SG45166A1/en unknown
- 1994-12-08 EP EP94119394A patent/EP0658885B1/en not_active Expired - Lifetime
- 1994-12-13 CN CN94119322A patent/CN1080425C/zh not_active Expired - Lifetime
- 1994-12-13 KR KR1019940034540A patent/KR0153025B1/ko not_active IP Right Cessation
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- 2000-10-18 JP JP2000317832A patent/JP2001134985A/ja active Pending
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Also Published As
Publication number | Publication date |
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JP3166893B2 (ja) | 2001-05-14 |
JP2001134985A (ja) | 2001-05-18 |
EP0658885B1 (en) | 2004-12-08 |
CA2133246A1 (en) | 1995-06-16 |
EP0658885A1 (en) | 1995-06-21 |
MY115161A (en) | 2003-04-30 |
KR0153025B1 (ko) | 1998-12-15 |
SG45166A1 (en) | 1998-01-16 |
JPH07201078A (ja) | 1995-08-04 |
DE69434171T2 (de) | 2006-01-12 |
CN1111788A (zh) | 1995-11-15 |
JP4056541B2 (ja) | 2008-03-05 |
CA2133246C (en) | 1998-12-15 |
CN1080425C (zh) | 2002-03-06 |
TW273616B (ko) | 1996-04-01 |
JP2006004627A (ja) | 2006-01-05 |
DE69434171D1 (de) | 2005-01-13 |
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