KR950012945A - Semiconductor laser device and manufacturing method thereof - Google Patents

Semiconductor laser device and manufacturing method thereof Download PDF

Info

Publication number
KR950012945A
KR950012945A KR1019930021460A KR930021460A KR950012945A KR 950012945 A KR950012945 A KR 950012945A KR 1019930021460 A KR1019930021460 A KR 1019930021460A KR 930021460 A KR930021460 A KR 930021460A KR 950012945 A KR950012945 A KR 950012945A
Authority
KR
South Korea
Prior art keywords
semiconductor laser
layer
active layer
laser device
groove structure
Prior art date
Application number
KR1019930021460A
Other languages
Korean (ko)
Other versions
KR100287205B1 (en
Inventor
김택
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019930021460A priority Critical patent/KR100287205B1/en
Publication of KR950012945A publication Critical patent/KR950012945A/en
Application granted granted Critical
Publication of KR100287205B1 publication Critical patent/KR100287205B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

고효율과 신뢰성이 개선된 반도체 레이저소자와 그 제조방법에 관한 것이다. 기판 상에 형성되며 국부적인 레이저 발잔영역을 갖는 활성층과, 상기 활성층 상하부에 상, 하부클래드층을 갖춘다. 상기 하부 클래드층과 상기 활성층은 U자홈 구조로 형성되며, 상기 U자홈에 대응되는 부위에 상대적으로 낮게 위치하는 바닥면이 마련되고, 상기 바닥면의 양측에 소정 각도, 경사진 경사면이 형성된 상부 클래드층을 구비한다.The present invention relates to a semiconductor laser device having improved efficiency and reliability, and a method of manufacturing the same. An active layer is formed on the substrate and has a local laser residue region, and upper and lower clad layers above and below the active layer. The lower clad layer and the active layer are formed in a U-shaped groove structure, the bottom surface is provided in a relatively low position on the portion corresponding to the U-shaped groove, the upper clad formed a predetermined angle, inclined slope on both sides of the bottom surface With layers.

본 발명은 1차 에피택시로 제작이 용이하다. 또 상부 클래드층이 전류 통전영역과 전류 차단영역으로 분리되어 전류의 퍼짐이 억제되기 때문에 구동 전류값이 적고 고출력이 가능한 반도체 가능한 반도체 레이저를 얻을 수 있다.The present invention is easy to manufacture with primary epitaxy. In addition, since the upper clad layer is divided into a current conduction region and a current interruption region, current spreading is suppressed, and a semiconductor laser capable of high output with a low driving current value can be obtained.

Description

반도체 레이저소자 및 그 제조방법Semiconductor laser device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 반도체 레이저 소자의 개략적 단면도,3 is a schematic cross-sectional view of a semiconductor laser device according to the present invention,

제4도 내지 제6도는 본 발명에 따른 반도체 레이저 소자의 제작단계별 개략적 단면도.4 to 6 are schematic cross-sectional views of manufacturing steps of the semiconductor laser device according to the present invention.

Claims (5)

기판 상에 형성되며 국부적인 레이저 발진 영역을 갖는 활성층과, 상기 활성층 상하부에 상, 하부클래드층을 갖춘 반도체 레이저 소자에 있어서, 상기 하부 클래드층과 상기 활성층은 U자홈 구조로 형성되며, 상기 U자홈에 대응되는 부위에 상대적으로 낮게 위치하고 N형 불순물로 도핑된 바닥면과 상기 바닥면의 양측에 소정 각도, 경사진 P형 불순물로 도우핑된 경사면이 형성된 U자홈 구조이 상부 클래드층을 구비한 것을 특징으로 하는 반도체 레이저 소자.In a semiconductor laser device having an active layer formed on a substrate and having a local laser oscillation region, and upper and lower clad layers above and below the active layer, the lower clad layer and the active layer are formed in a U-groove structure. A U-groove structure having a lower cladding and a lower surface doped with N-type impurities and an inclined surface doped with an inclined P-type impurity at predetermined angles on both sides of the bottom surface have an upper clad layer. A semiconductor laser device. 제1항에 있어서, 상기 상부클래드층의 U자홈 구조에 대응하여 N형의 캡층이 형성되는 것을 특징으로 하는 반도체 레이저 소자.The semiconductor laser device according to claim 1, wherein an N-type cap layer is formed corresponding to the U-shaped groove structure of the upper clad layer. 제1항에 있어서, 상기 활성층은 InGaP, GaAs, AlGaAs InGaAs 또는 InGaAsP중에서 어느 하나의 소재로 구성되며, 상기 상부클래드층은 InGaAsP 또는 InGaP인 것을 특징으로 하는 반도체 레이저 소자.The semiconductor laser device according to claim 1, wherein the active layer is made of one of InGaP, GaAs, AlGaAs InGaAs, or InGaAsP, and the upper clad layer is InGaAsP or InGaP. 기판을 U자홈 구조로 식각하는 단계; 상기 기판의 U자홈 구조에 대응하는 하부 클래드층을 형성하는 단계; 상기 하부 클래드층에 대응하여 활성층을 형성하는 단계; 동시 도우핑 과정을 통하여, 상기 활성층의 U자홈에 대응되는 부위에 상대적으로 낮게 위치한 바닥면과 상기 바닥면의 양측에 소정 각도 경사진 경사면을 갖는 U자홈 구조의 상부클래드층을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 레이저 소자의 제조방법.Etching the substrate into a U-groove structure; Forming a lower clad layer corresponding to the U-groove structure of the substrate; Forming an active layer corresponding to the lower clad layer; Forming a top cladding layer of a U-groove structure having a bottom surface positioned relatively low on a portion corresponding to the U-groove of the active layer and an inclined surface inclined at a predetermined angle on both sides of the bottom surface through a simultaneous doping process. The manufacturing method of the semiconductor laser element characterized by the above-mentioned. 제4항에 있어서, 상기 상부 클래드층은 유기금속 기상성장법(MOCVD)의 동시 도핑법이나 분자선 성장법의 면선택도핑(plane selective doping)법을 이용하여 형성하는 것을 특징으로 하는 반도체 레이저 소자의 제조방법.5. The semiconductor laser device according to claim 4, wherein the upper clad layer is formed by simultaneous doping of organic metal vapor deposition (MOCVD) or plane selective doping of molecular beam growth. Manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930021460A 1993-10-15 1993-10-15 Semiconductor laser device and manufacturing method thereof KR100287205B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930021460A KR100287205B1 (en) 1993-10-15 1993-10-15 Semiconductor laser device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930021460A KR100287205B1 (en) 1993-10-15 1993-10-15 Semiconductor laser device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR950012945A true KR950012945A (en) 1995-05-17
KR100287205B1 KR100287205B1 (en) 2001-09-17

Family

ID=37514964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930021460A KR100287205B1 (en) 1993-10-15 1993-10-15 Semiconductor laser device and manufacturing method thereof

Country Status (1)

Country Link
KR (1) KR100287205B1 (en)

Also Published As

Publication number Publication date
KR100287205B1 (en) 2001-09-17

Similar Documents

Publication Publication Date Title
US5452315A (en) Semiconductor laser with semi-insulating current blocking layers
KR960030452A (en) Compound semiconductor light receiving element and manufacturing method thereof
US5179040A (en) Method of making a semiconductor laser device
KR950012945A (en) Semiconductor laser device and manufacturing method thereof
US5111471A (en) Semiconductor laser device
KR970072507A (en) Method for manufacturing a horizontal semiconductor PN junction array
JPH0325032B2 (en)
KR950007213A (en) Semiconductor laser diode and manufacturing method thereof
KR950012873A (en) Semiconductor laser diode and manufacturing method thereof
KR950010242A (en) Semiconductor laser device and manufacturing method thereof
KR960002987A (en) Laser diode and manufacturing method thereof
JPH05299771A (en) Semiconductor laser diode
KR100265804B1 (en) Semiconductor laser diode
KR950012875A (en) Laser diode and manufacturing method thereof
KR0148604B1 (en) Fabricating method of heterojunction bipolar transistor
KR960002991A (en) Compound Semiconductor Laser Diode and Manufacturing Method Thereof
KR950010240A (en) Semiconductor laser diode and its manufacturing method
KR100242789B1 (en) Fabricating method of current blocking structure for optical device
KR950010237A (en) Semiconductor laser diode
KR100234043B1 (en) Method of manufacturing high power laser diode
KR940011276B1 (en) Laser diode and manufacturing method the same
KR950012864A (en) Manufacturing method of laser diode
KR950012876A (en) Semiconductor laser device and manufacturing method thereof
KR950012831A (en) Semiconductor laser diode with large optical resonator structure
KR950012939A (en) Laser Diode and Manufacturing Method

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100114

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee