KR960002987A

KR960002987A - Laser diode and manufacturing method thereof

Info

Publication number: KR960002987A
Application number: KR1019940015035A
Authority: KR
Inventors: 오명석; 김남헌
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1994-06-28
Filing date: 1994-06-28
Publication date: 1996-01-26
Also published as: KR100278632B1

Abstract

신뢰성이 우수한 단파장의 레이저 다이오드 및 그 제조방법에 관하여 개시한다.본 발명은 기판의 상부에 버퍼층,하부크래딩층,활성층 및 상부크래딩층이 순차적으로 형성되고,상기 상부 크래딩층의 상부에 리지가 형성되고,상기 리지의 양측면에 전류정지층이 마련된 레이저 다이오드에 있어서,상기 전류정지층은 순차적으로 적층되는 것으로,제1의 불순물이 도핑된 n-물질층,,제2의 불순물이 도핑된 p-물질층 및 제1 또는 제3의 불순물이 도핑된 n-물질층을 구비한다.A short wavelength laser diode having excellent reliability and a method of manufacturing the same are disclosed. The present invention sequentially forms a buffer layer, a lower cladding layer, an active layer, and an upper cladding layer on an upper portion of the substrate, and forms a ridge on the upper cladding layer. In the laser diode provided with a current stop layer on both sides of the ridge, The current stop layer is sequentially stacked, n-material layer doped with a first impurity, p- doped with a second impurity A material layer and an n-material layer doped with first or third impurities.

본 발명에 의하면,n-물질층/p-물질층으로 전류정지층을 형성하기 때문에,p-n-p-n 접합이 형성되어 캐리어의 누출을 효과적으로 방지할 수 있다.According to the present invention, since the current stop layer is formed of the n-material layer / p-material layer, a p-n-p-n junction is formed to effectively prevent leakage of the carrier.

Description

Laser diode and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래기술에 의한 레이저 다이오드의 개략적 단면도.1 is a schematic cross-sectional view of a laser diode according to the prior art.

제2도는 본 발명에 의한 레이저 다이오드의 개략적 단면도.2 is a schematic cross-sectional view of a laser diode according to the present invention.

Claims

A buffer layer, a lower cladding layer, an active layer and an upper cladding layer are sequentially formed on the substrate, a ridge is formed on the upper cladding layer, and a current stop layer is provided on both sides of the ridge. In the laser diode provided with the electrode, the current stopping layer is sequentially stacked, the n-material layer doped with a first impurity, the p-material layer doped with a second impurity and the first or third And an n-material layer doped with an impurity.

The laser diode of claim 1, wherein the material of the material layer is GaAs.

The material of the substrate and the buffer layer is n-GaAs, the material of the lower cladding layer is n- (A1 _0.7 Ga) _0.5 InP, the material of the active layer is GaInP, and the material of the upper cladding layer is p-. (A1 _0.7 Ga) InP is a laser diode.

The laser diode according to claim 1, wherein a contact layer and a cap layer are formed on a top surface of the ridge.

Sequentially forming a buffer layer, a lower cladding layer, an active layer, and an upper cladding layer on a substrate by a first organometallic vapor phase growth method; etching both upper sides of the upper cladding layer to protrude a predetermined height in the center thereof And n-material layers doped with a first impurity, p-material layers doped with a second impurity and n-material layers doped with a first or third impurity on both sides of the ridge. The method of manufacturing a laser diode comprising the step of sequentially growing by a second organometallic vapor phase growth method to form a current stop layer.

The method of claim 5, wherein GaAs is used as a material of the material layer.

The method of claim 5, further comprising sequentially forming a contact layer and a cap layer on the upper cladding layer between the growth of the upper cladding layer and the etching step.

※ Note: The disclosure is based on the original application.