KR950012876A - Semiconductor laser device and manufacturing method thereof - Google Patents

Semiconductor laser device and manufacturing method thereof Download PDF

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Publication number
KR950012876A
KR950012876A KR1019930021462A KR930021462A KR950012876A KR 950012876 A KR950012876 A KR 950012876A KR 1019930021462 A KR1019930021462 A KR 1019930021462A KR 930021462 A KR930021462 A KR 930021462A KR 950012876 A KR950012876 A KR 950012876A
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KR
South Korea
Prior art keywords
layer
clad layer
upper clad
semiconductor laser
substrate
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Application number
KR1019930021462A
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Korean (ko)
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KR100287206B1 (en
Inventor
김택
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김광호
삼성전자 주식회사
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Priority to KR1019930021462A priority Critical patent/KR100287206B1/en
Publication of KR950012876A publication Critical patent/KR950012876A/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Abstract

1차의 에피택시 공정에 의해 벤트 웨이브 가이드형 광도파를 하는 반도체 레이저 소자 및 그 제조방법이 개시된다.Disclosed are a semiconductor laser device that performs a vent wave guide type optical waveguide by a primary epitaxy process, and a method of manufacturing the same.

중앙상부에 평탄한 저면부를 갖는 오목부 형상의 채널 스트라이프가 형성된 기판상에 상기 오목부 형상을 유지하면서 순차적으로 하부 클래드층, 활성층 및 상부 클래드층이 형성되어 있다. 상기 상부 클래드층이 오목부 내에는 캡층이 충전되어 있으며, 상기 캡층 및 노출된 상부 클래드층상에 상기 상부 클래드층과의 접촉면에서 쇼트키 장벽을 형성하는 금속전극층이 형성되어 있다. 기본 모우드 발진이 유리하며, 비점수차 거리가 작아 소자의 효율, 신뢰성 및 생산성이 향상된다.The lower clad layer, the active layer and the upper clad layer are sequentially formed while maintaining the concave portion on the substrate on which the concave channel stripe having the flat bottom portion is formed on the center. A cap layer is filled in the recess of the upper clad layer, and a metal electrode layer is formed on the cap layer and the exposed upper clad layer to form a Schottky barrier at the contact surface with the upper clad layer. Basic mode oscillation is advantageous and the astigmatism distance is small, which improves the efficiency, reliability and productivity of the device.

Description

반도체 레이저 소자 및 그 제조방법Semiconductor laser device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 반도체 레이저 다이오드의 일례를 나타내는 단면도,2 is a cross-sectional view showing an example of a semiconductor laser diode according to the present invention;

제3도의 (a)-(c)는 본 발명에 의한 반도체 레이저 다이오드의 제조방법의 일례를 나타내는 단면도,(A)-(c) of FIG. 3 is sectional drawing which shows an example of the manufacturing method of the semiconductor laser diode by this invention,

제4도는 본 발명의 일례에 따른 반도체 레이저 다이오드의 활성층의 에너지 밴드 다이아그램.4 is an energy band diagram of an active layer of a semiconductor laser diode according to an example of the present invention.

Claims (6)

중앙상부에 평탄한 저면부와 경사부를 갖는 오목부 형상의 채널 스트라이프가 형성된 기판; 상기 기판상에 상기 오목부 형상을 유지하면서 순차적으로 형성된 하부 클래드층, 활성층 및 상부 클래드층으로 이루어진 레이저 발진 구조물; 상기 상부 클래드층이 오목부 내에 충전된 오믹접촉을 위한 캡층; 및 상기 캡층 및 노출된 상부 클래드층상에 형성되고, 상기 상부 클래드층과의 접촉면에서 쇼트키 장벽을 형성하는 금속전극층을 구비하여 이루어지는 것을 특징으로 하는 반도체 레이저 소자.A substrate having a concave channel stripe having a flat bottom portion and an inclined portion formed in an upper center portion thereof; A laser oscillation structure consisting of a lower cladding layer, an active layer and an upper cladding layer sequentially formed while maintaining the shape of the recess on the substrate; A cap layer for ohmic contact in which the upper clad layer is filled in a recess; And a metal electrode layer formed on the cap layer and the exposed upper clad layer and forming a Schottky barrier at the contact surface with the upper clad layer. 제1항에 있어서, 상기 활성층/크래드층의 재료는 InGaAs/InGaAlP, InGaP/InGaAlP 및 GaAs/AlGaAs계로 이루어진 그룹에서 선택된 어느 하나로 이루어진 것임을 특징으로 하는 반도체 레이저 소자.The semiconductor laser device according to claim 1, wherein the material of the active layer / clad layer is one selected from the group consisting of InGaAs / InGaAlP, InGaP / InGaAlP, and GaAs / AlGaAs. 제1항에 있어서, 상기 활성층은 다중 양자우물 구조로 형성되어 있는 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode of claim 1, wherein the active layer has a multi-quantum well structure. 제1항에 있어서, 상기 상부 클래드층과 상기 상부 클래드층의 오목부 내에 충전되는 캡층은 서로 평탄면을 이루도록 형성되어 있는 것을 특징으로 하는 반도체 레이저 소자.The semiconductor laser device according to claim 1, wherein the upper clad layer and the cap layer filled in the concave portion of the upper clad layer are formed to be flat with each other. 기판의 중앙상부에 평탄한 저면부와 경사부를 갖는 오목부 형상의 채널 스트라이프가 형성하는 단계; 상기 기판상에 하부 클래드층, 활성층, 상부 클래드층 및 오믹접촉을 위한 캡층을 상기 오목부 형상이 유지되도록 순차적으로 형성하는 단계; 상기 상부 클래드층의 오목부 내에만 충전되도록 상기 캡층의 일부를 식각하여 상기 오목부 이외의 상부 클래드층을 노출시키는 단계; 및 상기 캡층 및 노출된 상부 클래드층상에 상기 상부 클래드층과의 접촉면에서 쇼트키 장벽을 형성하는 금속전극층을 형성하는 단계를 구비하여 이루어지는 것을 특징으로 하는 반도체 레이저 소자의 제조방법.Forming a concave channel stripe having a flat bottom portion and an inclined portion on an upper center portion of the substrate; Sequentially forming a lower clad layer, an active layer, an upper clad layer, and a cap layer for ohmic contact on the substrate to maintain the concave shape; Etching a portion of the cap layer to expose only an upper clad layer other than the recessed portion so as to be filled only in the recessed portion of the upper clad layer; And forming a metal electrode layer on the cap layer and the exposed upper clad layer to form a Schottky barrier at the contact surface with the upper clad layer. 제5항에 있어서, 상기 기판상에 하부 클래드층, 활성층, 상부 클래드층 및 캡층을 순차적으로 형성하는 단계는 기상성장법에 의한 1차의 에피택시 공정으로 수행되는 것을 특징으로 하는 반도체 레이저 소자의 제조 방법.The semiconductor laser device according to claim 5, wherein the step of sequentially forming a lower clad layer, an active layer, an upper clad layer, and a cap layer on the substrate is performed by a first epitaxy process by a vapor phase growth method. Manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930021462A 1993-10-15 1993-10-15 Semiconductor laser device and manufacturing method thereof KR100287206B1 (en)

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KR1019930021462A KR100287206B1 (en) 1993-10-15 1993-10-15 Semiconductor laser device and manufacturing method thereof

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KR950012876A true KR950012876A (en) 1995-05-17
KR100287206B1 KR100287206B1 (en) 2001-09-17

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JPH0567836A (en) * 1991-09-06 1993-03-19 Sharp Corp Algainp semiconductor laser

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