KR950011565B1 - 반도체 장치의 제조방법 - Google Patents
반도체 장치의 제조방법 Download PDFInfo
- Publication number
- KR950011565B1 KR950011565B1 KR1019920000754A KR920000754A KR950011565B1 KR 950011565 B1 KR950011565 B1 KR 950011565B1 KR 1019920000754 A KR1019920000754 A KR 1019920000754A KR 920000754 A KR920000754 A KR 920000754A KR 950011565 B1 KR950011565 B1 KR 950011565B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- semiconductor device
- manufacturing
- resistance
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (2)
- SOI 구조를 갖는 기판의 전면에 상기 기판의 산화를 저지하는 산화 저지층을 형성하는 공정과 상기 산화 저지층을 패터닝하여 활성 영역 부분만을 남기는 공정과 상기 기판을 선택적으로 산화하여 필드 산화막을 형성하는 단계를 포함하는 반도체 장치의 제조 방법에 있어서, 상기 산화층을 패터닝하는 단계에서 남기는 상기 산화저지층의 최소 폭을 상기 기판을 선택적으로 산화하는 단계에서 생기는 새부리 부분의 길이의 2배 이하로 형성하여 상부는 상기 필드 산화막으로 덮여 있는 매몰 실리콘을 형성함을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서, 상기 매몰 규소층을 특징으로 하는 반도체 장치의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920000754A KR950011565B1 (ko) | 1992-01-20 | 1992-01-20 | 반도체 장치의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920000754A KR950011565B1 (ko) | 1992-01-20 | 1992-01-20 | 반도체 장치의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930017193A KR930017193A (ko) | 1993-08-30 |
KR950011565B1 true KR950011565B1 (ko) | 1995-10-06 |
Family
ID=19328106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920000754A Expired - Fee Related KR950011565B1 (ko) | 1992-01-20 | 1992-01-20 | 반도체 장치의 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950011565B1 (ko) |
-
1992
- 1992-01-20 KR KR1019920000754A patent/KR950011565B1/ko not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR930017193A (ko) | 1993-08-30 |
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Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19950911 |
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