KR950009929B1 - Forming contacts on diamonds - Google Patents

Forming contacts on diamonds Download PDF

Info

Publication number
KR950009929B1
KR950009929B1 KR87006257A KR870006257A KR950009929B1 KR 950009929 B1 KR950009929 B1 KR 950009929B1 KR 87006257 A KR87006257 A KR 87006257A KR 870006257 A KR870006257 A KR 870006257A KR 950009929 B1 KR950009929 B1 KR 950009929B1
Authority
KR
South Korea
Prior art keywords
conductive regions
diamond
detector
contacts
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR87006257A
Other languages
English (en)
Korean (ko)
Other versions
KR880000800A (ko
Inventor
Johan F Prins
Tom L Nam
Rex J Keddy
Original Assignee
De Beers Ind Diamond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Ind Diamond filed Critical De Beers Ind Diamond
Publication of KR880000800A publication Critical patent/KR880000800A/ko
Application granted granted Critical
Publication of KR950009929B1 publication Critical patent/KR950009929B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/26—Measuring radiation intensity with resistance detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0114—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to diamond, semiconducting diamond-like carbon or graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Light Receiving Elements (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR87006257A 1986-06-20 1987-06-20 Forming contacts on diamonds Expired - Fee Related KR950009929B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA86/4614 1986-06-20
ZA864614 1986-06-20

Publications (2)

Publication Number Publication Date
KR880000800A KR880000800A (ko) 1988-03-29
KR950009929B1 true KR950009929B1 (en) 1995-09-01

Family

ID=25578457

Family Applications (1)

Application Number Title Priority Date Filing Date
KR87006257A Expired - Fee Related KR950009929B1 (en) 1986-06-20 1987-06-20 Forming contacts on diamonds

Country Status (7)

Country Link
US (1) US4833328A (cg-RX-API-DMAC7.html)
EP (1) EP0250252B1 (cg-RX-API-DMAC7.html)
JP (1) JPS6345582A (cg-RX-API-DMAC7.html)
KR (1) KR950009929B1 (cg-RX-API-DMAC7.html)
AT (1) ATE70369T1 (cg-RX-API-DMAC7.html)
DE (1) DE3775121D1 (cg-RX-API-DMAC7.html)
ZA (1) ZA874362B (cg-RX-API-DMAC7.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL81537A (en) * 1986-02-24 1991-05-12 De Beers Ind Diamond Method and synthetic diamond detector for detection of nuclear radiation
CA1289683C (en) * 1987-10-27 1991-09-24 De Beers Industrial Diamond Division (Proprietary) Diamond radiation probe
DE68907196T2 (de) * 1988-12-28 1993-10-14 De Beers Ind Diamond Diamant-Szintillationsdetektor.
GB8902443D0 (en) * 1989-02-03 1989-03-22 Jones Barbara L Radiation detector
CA2021020A1 (en) * 1989-07-13 1991-01-14 Johan Frans Prins Diamond diode structure
US5079425A (en) * 1990-01-10 1992-01-07 Sumitomo Electric Industries, Ltd. Radiation detecting element
JP2836790B2 (ja) * 1991-01-08 1998-12-14 株式会社神戸製鋼所 ダイヤモンド薄膜へのオーミック電極形成方法
US5334306A (en) * 1991-12-11 1994-08-02 At&T Bell Laboratories Metallized paths on diamond surfaces
EP0614094B1 (en) * 1993-03-02 2000-06-07 De Beers Industrial Diamond Division (Proprietary) Limited Diamond phosphorescence radiation detector
CA2281972C (en) * 1993-07-20 2000-10-17 Saint-Gobain/Norton Industrial Ceramics Corporation Cvd diamond radiation detector
ZA946002B (en) * 1993-08-12 1995-03-14 De Beers Ind Diamond Detecting ionising radiation
IL124592A (en) 1997-05-23 2002-07-25 Gersan Ets Method of marking a gemstone or diamond
GB9710738D0 (en) * 1997-05-23 1997-07-16 Gersan Ets Diamond marking
JP6634646B2 (ja) * 2015-09-14 2020-01-22 学校法人早稲田大学 グラファイト積層ダイヤモンド基板及びその製造方法、並びに半導体装置及びその製造方法
EP4001970B1 (en) * 2020-11-24 2026-08-19 Commissariat à l'Energie Atomique et aux Energies Alternatives Radiation detector

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
FR1601100A (cg-RX-API-DMAC7.html) * 1967-03-29 1970-08-10
US3824680A (en) * 1968-03-28 1974-07-23 Levina Fizichesky I I Lebedeva Nuclear radiation detector and method of manufacturing same
US4609520A (en) * 1984-01-30 1986-09-02 The United States Of America As Represented By The Secretary Of The Army Protection of radiation detectors from fast neutron damage

Also Published As

Publication number Publication date
JPH0531951B2 (cg-RX-API-DMAC7.html) 1993-05-13
EP0250252A1 (en) 1987-12-23
KR880000800A (ko) 1988-03-29
ATE70369T1 (de) 1991-12-15
ZA874362B (en) 1988-02-24
EP0250252B1 (en) 1991-12-11
US4833328A (en) 1989-05-23
JPS6345582A (ja) 1988-02-26
DE3775121D1 (de) 1992-01-23

Similar Documents

Publication Publication Date Title
ZA874362B (en) Forming contacts on diamonds
EP0479625A3 (en) Diamond neutron detector
EP0463165A4 (en) Device and method of manufacturing the same; and semiconductor device and method of manufacturing the same
Fermi Multiple Production of Pions in Nucleon-Nucleon Collisions at Cosmotron Energies
GB8600304D0 (en) Radio signals
EP0137209A3 (en) Silicon wafer and its application in producing integrated circuit devices
DE3469113D1 (en) Blooming-insensitive image sensor device and method of manufacturing same
JPS5689742A (en) Mask for exposure
JPS6481276A (en) Semiconductor radiation detector
JPS5650520A (en) Processing method of semiconductor substrate
Kirillova et al. Acceleration of Relaxation of Non-Equilibrium Depletion on a Real Silicon Surface in Strong Electrical Fields
JPS6465865A (en) Manufacture of complementary semiconductor device
MILLER et al. In situ selected area doping of GaAs by molecular beam epitaxy(Final Report, 1 Jun. 1983- 31 May 1985)
ES8403834A1 (es) Procedimiento para la separacion de cadmio o mercurio a partir de fosfato bruto
Levin et al. Potentials produced by charge on an elliptic disk(charge, dipole, and quadrupole sources distribution)
Qu et al. A Study of Concentration Profile of Low-Mass Ions Implanted in Metals by R. B. S
JPS5493978A (en) Semicoductor device
JPS56140644A (en) Semiconductor device and manufacture thereof
DIETSCH et al. Application of ion implantation in the manufacturing of monolithic bipolar analogue integrated circuits[Final Report]
Langbein et al. Investigation of the influence of the surface on the behavior of defects in a neutron-irradiated silicon.
JPS5240070A (en) Process for production of semiconductor device
ES8207487A1 (es) Procedimiento para reextraer en varias fases,en una bateria de mezcladores-decantadores,el uranio de un extractante
Spangenberg et al. Calculation of Steel Resistance for Ion-Implanted Boron Layers in Silicon
Shavgulidze et al. Electrochemical Action of Cadmium in Ethylene Glycol
Iwaki et al. Atom and Carrier Profiles in As Implanted Si

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 19980902

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 19980902

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000