KR950009927A - Method of manufacturing silicide of semiconductor device - Google Patents
Method of manufacturing silicide of semiconductor device Download PDFInfo
- Publication number
- KR950009927A KR950009927A KR1019930018757A KR930018757A KR950009927A KR 950009927 A KR950009927 A KR 950009927A KR 1019930018757 A KR1019930018757 A KR 1019930018757A KR 930018757 A KR930018757 A KR 930018757A KR 950009927 A KR950009927 A KR 950009927A
- Authority
- KR
- South Korea
- Prior art keywords
- silicide
- semiconductor device
- titanium
- oxide film
- diffusion layer
- Prior art date
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- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 반도체 소자의 실리사이드 제조 방법에 관한 것으로, 반도체 소자의 n+또는 p+확산층 및 폴리 실리콘 영역에 실리사이드를 형성한 후 도프 옥사이드를 증착한 다음 고온 열처리 하여 도프 옥사이드 내의 인(P), 붕소(B) 등의 실리사이드 내로 확산되도록 한 반도체 소자의 실리사이드 제조방법에 관해 기술된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing silicide of a semiconductor device, wherein silicide is formed in an n + or p + diffusion layer and a polysilicon region of a semiconductor device, and then dope oxide is deposited, followed by high temperature heat treatment to form phosphorus (P) and boron in the dope oxide. The silicide manufacturing method of the semiconductor element made to diffuse into silicide, such as (B), is described.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2는 본 발명에 의한 반도체 소자의 실리사이드 제조방법을 나타내는 단면도.2 is a cross-sectional view showing a silicide manufacturing method of a semiconductor device according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930018757A KR950009927A (en) | 1993-09-17 | 1993-09-17 | Method of manufacturing silicide of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930018757A KR950009927A (en) | 1993-09-17 | 1993-09-17 | Method of manufacturing silicide of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950009927A true KR950009927A (en) | 1995-04-26 |
Family
ID=66824315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930018757A KR950009927A (en) | 1993-09-17 | 1993-09-17 | Method of manufacturing silicide of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950009927A (en) |
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1993
- 1993-09-17 KR KR1019930018757A patent/KR950009927A/en not_active Application Discontinuation
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