KR950009927A - Method of manufacturing silicide of semiconductor device - Google Patents

Method of manufacturing silicide of semiconductor device Download PDF

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Publication number
KR950009927A
KR950009927A KR1019930018757A KR930018757A KR950009927A KR 950009927 A KR950009927 A KR 950009927A KR 1019930018757 A KR1019930018757 A KR 1019930018757A KR 930018757 A KR930018757 A KR 930018757A KR 950009927 A KR950009927 A KR 950009927A
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KR
South Korea
Prior art keywords
silicide
semiconductor device
titanium
oxide film
diffusion layer
Prior art date
Application number
KR1019930018757A
Other languages
Korean (ko)
Inventor
권성수
박상균
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930018757A priority Critical patent/KR950009927A/en
Publication of KR950009927A publication Critical patent/KR950009927A/en

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Abstract

본 발명은 반도체 소자의 실리사이드 제조 방법에 관한 것으로, 반도체 소자의 n+또는 p+확산층 및 폴리 실리콘 영역에 실리사이드를 형성한 후 도프 옥사이드를 증착한 다음 고온 열처리 하여 도프 옥사이드 내의 인(P), 붕소(B) 등의 실리사이드 내로 확산되도록 한 반도체 소자의 실리사이드 제조방법에 관해 기술된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing silicide of a semiconductor device, wherein silicide is formed in an n + or p + diffusion layer and a polysilicon region of a semiconductor device, and then dope oxide is deposited, followed by high temperature heat treatment to form phosphorus (P) and boron in the dope oxide. The silicide manufacturing method of the semiconductor element made to diffuse into silicide, such as (B), is described.

Description

반도체 소자의 실리사이드 제조방법Method of manufacturing silicide of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2는 본 발명에 의한 반도체 소자의 실리사이드 제조방법을 나타내는 단면도.2 is a cross-sectional view showing a silicide manufacturing method of a semiconductor device according to the present invention.

Claims (1)

실리콘 기판(1) 상부에 소자 격리용 필드 산화막(2) 및 게이트 산화막(3)을 형성하고, 게이트 산화막(3) 상부에 게이트 전극용 폴리실리콘(4)을 증착한 후 소스(또는 드레인)영역인 n+또는 p+확산층(5)을 형성한 다음 게이트 산화막(3) 측벽에 상기 n+또는 p+확산층(5)과의 격리를 위한 스페이서 산화막(6)을 형성하는 단계와, 상기 단계로부터 전체적으로 티타늄(7)을 증착하고, 저온 RTA 공정으로 상기 n+또는 p+확산층(5) 및 폴리실리콘(4) 영역에 티타늄 실리사이드(8)가 형성되게 한 후 이들 영역(5 및 4)에만 상기 티타늄-실리사이드(8)가 잔류하도록 티타늄(7)을 선택적으로 식각한 후 고온 RTA 공정을 실시하는 단계로 이루어지는 반도체 소자의 실리사이드 제조방법에 있어서, 상기 고온 RTA 공정전에, P, B 등을 다량 함유하는 도프 옥사이드(9)를 증착하고 고온 RTA 공정을 실시하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 실리사이드 제조방법.A field isolation film 2 and a gate oxide film 3 are formed on the silicon substrate 1 and the polysilicon 4 for the gate electrode is deposited on the gate oxide film 3, and then a source (or drain) region is formed. Forming a phosphorus n + or p + diffusion layer 5 and then forming a spacer oxide film 6 for isolation from the n + or p + diffusion layer 5 on the sidewalls of the gate oxide film 3, from which step Titanium (7) as a whole is deposited and the titanium silicide (8) is formed in the n + or p + diffusion layer (5) and the polysilicon (4) region by a low temperature RTA process, and then only in these regions (5 and 4) In the method of manufacturing a silicide of a semiconductor device comprising the step of selectively etching titanium (7) so that the titanium-silicide (8) remains, and then performing a high temperature RTA process, a large amount of P, B, etc. is contained before the high temperature RTA process. Dope oxide (9) Silicide method of producing a semiconductor device comprising the steps of: performing RTA process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930018757A 1993-09-17 1993-09-17 Method of manufacturing silicide of semiconductor device KR950009927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930018757A KR950009927A (en) 1993-09-17 1993-09-17 Method of manufacturing silicide of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930018757A KR950009927A (en) 1993-09-17 1993-09-17 Method of manufacturing silicide of semiconductor device

Publications (1)

Publication Number Publication Date
KR950009927A true KR950009927A (en) 1995-04-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930018757A KR950009927A (en) 1993-09-17 1993-09-17 Method of manufacturing silicide of semiconductor device

Country Status (1)

Country Link
KR (1) KR950009927A (en)

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