KR950009622U - 플라즈마 화학기상 증착 장비의 컴플리트 보트 - Google Patents

플라즈마 화학기상 증착 장비의 컴플리트 보트

Info

Publication number
KR950009622U
KR950009622U KR2019930017607U KR930017607U KR950009622U KR 950009622 U KR950009622 U KR 950009622U KR 2019930017607 U KR2019930017607 U KR 2019930017607U KR 930017607 U KR930017607 U KR 930017607U KR 950009622 U KR950009622 U KR 950009622U
Authority
KR
South Korea
Prior art keywords
vapor deposition
chemical vapor
plasma chemical
deposition equipment
complete boat
Prior art date
Application number
KR2019930017607U
Other languages
English (en)
Other versions
KR0137972Y1 (ko
Inventor
오승언
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019930017607U priority Critical patent/KR0137972Y1/ko
Publication of KR950009622U publication Critical patent/KR950009622U/ko
Application granted granted Critical
Publication of KR0137972Y1 publication Critical patent/KR0137972Y1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • ing And Chemical Polishing (AREA)
KR2019930017607U 1993-09-04 1993-09-04 플라즈마 화학기상 증착 장비의 컴플리트 보트 KR0137972Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019930017607U KR0137972Y1 (ko) 1993-09-04 1993-09-04 플라즈마 화학기상 증착 장비의 컴플리트 보트

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019930017607U KR0137972Y1 (ko) 1993-09-04 1993-09-04 플라즈마 화학기상 증착 장비의 컴플리트 보트

Publications (2)

Publication Number Publication Date
KR950009622U true KR950009622U (ko) 1995-04-21
KR0137972Y1 KR0137972Y1 (ko) 1999-03-20

Family

ID=19362816

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019930017607U KR0137972Y1 (ko) 1993-09-04 1993-09-04 플라즈마 화학기상 증착 장비의 컴플리트 보트

Country Status (1)

Country Link
KR (1) KR0137972Y1 (ko)

Also Published As

Publication number Publication date
KR0137972Y1 (ko) 1999-03-20

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