KR950001905A - 게이트전극 형성방법 - Google Patents
게이트전극 형성방법 Download PDFInfo
- Publication number
- KR950001905A KR950001905A KR1019930011750A KR930011750A KR950001905A KR 950001905 A KR950001905 A KR 950001905A KR 1019930011750 A KR1019930011750 A KR 1019930011750A KR 930011750 A KR930011750 A KR 930011750A KR 950001905 A KR950001905 A KR 950001905A
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- injecting
- insulating film
- forming
- gas
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract 4
- 238000000137 annealing Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 게이트전극 형성방법에 관한 것으로, 저압화학기상증착 튜브에 웨이퍼를 로딩하고 소정 온도에서 N2가스를 주입하는 제 1 단계, 소정온도에서 게이트절연막 형성을 위한 일정가스를 주입한 다음 어닐링하는 제 2 단계 및, 게이트전극 형성을 위한 일정가스를 주입하는 제 3 단계를 포함하여 이루어져 저압화학기상증착 튜브에서 절연막을 성장시킴으로써 양질의 절연막 성장과 두께의 조절이 가능하고, 또한 2개의 열화로에서 진행되던 게이트절연막 형성공정과 게이트전극 형성공정을 저압화학기상증착 튜브에서 동일 상황하에서 진행함에 따라 두 공정 사이에 발생될 수 있는 결함을 방지하여 제품의 성능과 수율향상을 꾀할 수 있으며, 아울러 공정시간을 단축함으로써 생산성 향상의 효과를 얻을 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명을 구현하는 공정조건도.
Claims (3)
- 게이트전극 형성방법에 있어서, 저압화학기상증착 튜브에 웨이퍼를 로딩하고 소정 온도에서 N2가스를 주입하는 제1단계, 소정온도에서 게이트절연막 형성을 위한 일정가스를 주입한 다음 어닐링하는 제2단계 및 게이트전극 형성을 위한 일정가스를 주입하는 제3단계를 포함하여 이루어지는 것을 특징으로 하는 게이트전극 형성방법.
- 제1항에 있어서, 상기 제2단계의 게이트절연막은 공정튜브의 온도를 800 내지 900℃로 높이고 N2O가스를 주입함으로써 형성되는 것을 특징으로 하는 게이트전극 형성방법.
- 제1항에 있어서, 상기 제3단계의 게이트전극은 공정튜브의 온도를 550 내지 700℃로 낮추고 SiH4가스를 주입함으로써 형성되는 것을 특징으로 하는 게이트전극 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930011750A KR960008565B1 (ko) | 1993-06-25 | 1993-06-25 | 게이트전극 형성방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930011750A KR960008565B1 (ko) | 1993-06-25 | 1993-06-25 | 게이트전극 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950001905A true KR950001905A (ko) | 1995-01-04 |
KR960008565B1 KR960008565B1 (ko) | 1996-06-28 |
Family
ID=19358080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930011750A KR960008565B1 (ko) | 1993-06-25 | 1993-06-25 | 게이트전극 형성방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960008565B1 (ko) |
-
1993
- 1993-06-25 KR KR1019930011750A patent/KR960008565B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR960008565B1 (ko) | 1996-06-28 |
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