KR950001871A - 쵸코라스키 결정 플러에서 사용하기 위한 나선형 히터 - Google Patents

쵸코라스키 결정 플러에서 사용하기 위한 나선형 히터 Download PDF

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Publication number
KR950001871A
KR950001871A KR1019940012018A KR19940012018A KR950001871A KR 950001871 A KR950001871 A KR 950001871A KR 1019940012018 A KR1019940012018 A KR 1019940012018A KR 19940012018 A KR19940012018 A KR 19940012018A KR 950001871 A KR950001871 A KR 950001871A
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KR
South Korea
Prior art keywords
susceptor
silicon
heater
coil
chokorasuki
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019940012018A
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English (en)
Korean (ko)
Inventor
마이클 그라임스 에이치
에이. 해리리 파루크
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR950001871A publication Critical patent/KR950001871A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019940012018A 1993-06-01 1994-05-31 쵸코라스키 결정 플러에서 사용하기 위한 나선형 히터 Withdrawn KR950001871A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7062893A 1993-06-01 1993-06-01
US08/070,628 1993-06-01

Publications (1)

Publication Number Publication Date
KR950001871A true KR950001871A (ko) 1995-01-04

Family

ID=22096455

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940012018A Withdrawn KR950001871A (ko) 1993-06-01 1994-05-31 쵸코라스키 결정 플러에서 사용하기 위한 나선형 히터

Country Status (5)

Country Link
US (1) US5571320A (https=)
EP (1) EP0628645A1 (https=)
JP (1) JPH08143391A (https=)
KR (1) KR950001871A (https=)
TW (1) TW252215B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020122438A1 (ko) * 2018-12-10 2020-06-18 웅진에너지 주식회사 잉곳 성장장치
WO2020122437A1 (ko) * 2018-12-10 2020-06-18 웅진에너지 주식회사 실리콘 잉곳 성장장치

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3402041B2 (ja) * 1995-12-28 2003-04-28 信越半導体株式会社 シリコン単結晶の製造装置
US5797990A (en) * 1996-02-26 1998-08-25 Ferrofluidics Corporation Apparatus for damping a crystal ingot suspension in a Czochralski crystal puller
US5932007A (en) * 1996-06-04 1999-08-03 General Signal Technology Corporation Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system
JPH10101482A (ja) * 1996-10-01 1998-04-21 Komatsu Electron Metals Co Ltd 単結晶シリコンの製造装置および製造方法
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
DE19652543A1 (de) * 1996-12-17 1998-06-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Silicium-Einkristalls und Heizvorrichtung zur Durchführung des Verfahrens
DE10349339A1 (de) * 2003-10-23 2005-06-16 Crystal Growing Systems Gmbh Kristallzüchtungsanlage
KR100942185B1 (ko) * 2007-10-04 2010-02-11 주식회사 실트론 실리콘 잉곳 성장방법
DE102009045680B4 (de) 2009-10-14 2012-03-22 Forschungsverbund Berlin E.V. Vorrichtung und Verfahren zur Herstellung von Siliziumblöcken aus der Schmelze durch gerichtete Erstarrung
DE102009046845A1 (de) 2009-11-18 2011-06-01 Forschungsverbund Berlin E.V. Kristallisationsanlage und Kristallisationsverfahren
CN108432342B (zh) 2015-12-31 2022-09-16 应用材料公司 用于处理腔室的高温加热器
CN109554555A (zh) * 2018-12-27 2019-04-02 中国神华能源股份有限公司 粗金属镓的提纯方法及结晶提纯装置
KR102271714B1 (ko) * 2020-09-28 2021-07-01 한화솔루션 주식회사 잉곳 성장 장치
CN115821367A (zh) * 2022-12-07 2023-03-21 西安奕斯伟材料科技有限公司 坩埚装置、单晶炉装置及其工作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949307B1 (https=) * 1970-02-18 1974-12-26
JPS59121183A (ja) * 1982-12-28 1984-07-13 Fujitsu Ltd 結晶成長方法
JPS59137394A (ja) * 1983-01-26 1984-08-07 Toshiba Corp 結晶育成装置
JPS60210592A (ja) * 1984-03-31 1985-10-23 M Setetsuku Kk 単結晶の引上げ装置
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
DE3432467C1 (de) * 1984-09-04 1986-03-27 Kernforschungsanlage Jülich GmbH, 5170 Jülich Stab- und Tiegelhalterung
JP2561072B2 (ja) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
JPH0350179A (ja) * 1989-07-19 1991-03-04 Nec Corp 結晶育成装置
US5268063A (en) * 1990-04-27 1993-12-07 Sumitomo Sitix Co., Ltd. Method of manufacturing single-crystal silicon
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020122438A1 (ko) * 2018-12-10 2020-06-18 웅진에너지 주식회사 잉곳 성장장치
WO2020122437A1 (ko) * 2018-12-10 2020-06-18 웅진에너지 주식회사 실리콘 잉곳 성장장치

Also Published As

Publication number Publication date
EP0628645A1 (en) 1994-12-14
JPH08143391A (ja) 1996-06-04
US5571320A (en) 1996-11-05
TW252215B (https=) 1995-07-21

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

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St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000