KR940027187A - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- KR940027187A KR940027187A KR1019940011756A KR19940011756A KR940027187A KR 940027187 A KR940027187 A KR 940027187A KR 1019940011756 A KR1019940011756 A KR 1019940011756A KR 19940011756 A KR19940011756 A KR 19940011756A KR 940027187 A KR940027187 A KR 940027187A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- silicon film
- substrate
- metal element
- amorphous silicon
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000004065 semiconductor Substances 0.000 title claims 3
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 7
- 230000002093 peripheral effect Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims abstract 17
- 239000010409 thin film Substances 0.000 claims abstract 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract 6
- 238000002425 crystallisation Methods 0.000 claims abstract 5
- 230000008025 crystallization Effects 0.000 claims abstract 5
- 239000011159 matrix material Substances 0.000 claims abstract 5
- 239000013078 crystal Substances 0.000 claims abstract 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims 13
- 239000002184 metal Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- 238000010438 heat treatment Methods 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000004528 spin coating Methods 0.000 claims 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
니켈이 비정질 실리콘막 위에서 화소 섹션외의 주변회로 섹션의 예정된 영역이 도입되어 그 영역으로부터 비정질막을 결정화시킨다.Nickel is introduced over the amorphous silicon film into a predetermined region of the peripheral circuit section other than the pixel section to crystallize the amorphous film from the region.
게이트전극 및 다른 소스, 드레인 및 채널이 불순물도핑에 의해 형성된 후, 레이저가 결정화를 개선시키기 위하여 조사된다. 그후, 전극/배선이 형성된다.After the gate electrode and other sources, drains and channels are formed by impurity doping, a laser is irradiated to improve crystallization. Thereafter, an electrode / wiring is formed.
이에의해, 주변회로 섹션안의 박막 트랜지스터가 캐리어의 흐름에 평행한 방향으로 결정이 성장된 결정성 실리콘으로 구성되고 화소 섹션안의 TFTs는 비정질 실리콘막으로 구성된 활성 매트릭스타입 액정 디스플레이가 얻어질 수 있다.Thereby, an active matrix type liquid crystal display in which the thin film transistor in the peripheral circuit section is composed of crystalline silicon in which crystals are grown in a direction parallel to the flow of the carrier and the TFT s in the pixel section is composed of an amorphous silicon film can be obtained.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 1 도는 본 발명의 실시예에 따라 액정 디스플레이의 개략적 구조를 보여 주는 도면, 제 2A 내지 2D도는 본 발명의 실시예에 따라 액정 디스플레이의 주변 회로섹션을 포함하는 NTFT 및 PTFT가 상보적으로 형성된 회로를 제조하는 공정을 보여주는 도면이다.1 is a view showing a schematic structure of a liquid crystal display according to an embodiment of the present invention, Figures 2A to 2D is a circuit complementary to the NTFT and PTFT comprising a peripheral circuit section of the liquid crystal display according to an embodiment of the present invention Is a view showing a process for manufacturing.
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14700193 | 1993-05-26 | ||
JP93-147001 | 1993-05-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940027187A true KR940027187A (en) | 1994-12-10 |
KR0180573B1 KR0180573B1 (en) | 1999-03-20 |
Family
ID=15420338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940011756A KR0180573B1 (en) | 1993-05-26 | 1994-05-26 | Semiconductor device including a plurality of thin film transistor at least some of which have a crystalline silicon |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR0180573B1 (en) |
CN (4) | CN100350627C (en) |
TW (1) | TW281786B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW451284B (en) | 1996-10-15 | 2001-08-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
TWI282126B (en) * | 2001-08-30 | 2007-06-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
JP3992976B2 (en) * | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
DE10217876A1 (en) * | 2002-04-22 | 2003-11-06 | Infineon Technologies Ag | Process for the production of thin metal-containing layers with low electrical resistance |
US7524688B2 (en) * | 2002-05-22 | 2009-04-28 | Tpo Hong Kong Holding Limited | Active matrix display devices and the manufacture thereof |
JP2004363241A (en) * | 2003-06-03 | 2004-12-24 | Advanced Lcd Technologies Development Center Co Ltd | Method and apparatus for forming crystallized semiconductor layer and method for manufacturing semiconductor device |
KR100514181B1 (en) * | 2003-09-03 | 2005-09-13 | 삼성에스디아이 주식회사 | series thin film transistor, active matrix oled using the same and fabrication method of the active matrix oled |
CN101140940A (en) * | 2006-08-18 | 2008-03-12 | 株式会社液晶先端技术开发中心 | Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors |
CN101419986B (en) * | 2008-12-05 | 2011-05-11 | 北京时代民芯科技有限公司 | Double edge total dose resistant radiation reinforcement pattern construction preventing edge electricity leakage |
TWI543358B (en) * | 2014-01-13 | 2016-07-21 | 友達光電股份有限公司 | Pixel of display panel |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55162224A (en) * | 1979-06-06 | 1980-12-17 | Toshiba Corp | Preparation of semiconductor device |
US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
DE3587100T2 (en) * | 1984-10-09 | 1993-09-09 | Fujitsu Ltd | METHOD FOR PRODUCING AN INTEGRATED CIRCUIT BASED ON THE SEMICONDUCTOR ON ISOLATOR TECHNOLOGY. |
JPS61102628A (en) * | 1984-10-25 | 1986-05-21 | Sony Corp | Liquid crystal display device |
JP2655865B2 (en) * | 1988-03-16 | 1997-09-24 | 株式会社日立製作所 | Manufacturing method of liquid crystal display device |
JP2653099B2 (en) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | Active matrix panel, projection display and viewfinder |
JPH0227320A (en) * | 1988-07-18 | 1990-01-30 | Hitachi Ltd | Thin film semiconductor display device and its manufacture |
JPH0252419A (en) * | 1988-08-16 | 1990-02-22 | Sony Corp | Manufacture of semiconductor substrate |
US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
JP3280420B2 (en) * | 1992-07-30 | 2002-05-13 | 株式会社紀文フードケミファ | Calcium absorption promoting composition containing soy milk |
-
1994
- 1994-05-25 TW TW083104759A patent/TW281786B/zh not_active IP Right Cessation
- 1994-05-26 CN CNB991202597A patent/CN100350627C/en not_active Expired - Lifetime
- 1994-05-26 CN CN94107606A patent/CN1058584C/en not_active Expired - Fee Related
- 1994-05-26 KR KR1019940011756A patent/KR0180573B1/en not_active IP Right Cessation
- 1994-05-26 CN CNB2006101030033A patent/CN100501980C/en not_active Expired - Fee Related
- 1994-05-26 CN CNB991202600A patent/CN100379017C/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1101167A (en) | 1995-04-05 |
CN100501980C (en) | 2009-06-17 |
CN1881568A (en) | 2006-12-20 |
TW281786B (en) | 1996-07-21 |
CN1058584C (en) | 2000-11-15 |
CN100350627C (en) | 2007-11-21 |
CN100379017C (en) | 2008-04-02 |
KR0180573B1 (en) | 1999-03-20 |
CN1258104A (en) | 2000-06-28 |
CN1258102A (en) | 2000-06-28 |
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