KR940027187A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
KR940027187A
KR940027187A KR1019940011756A KR19940011756A KR940027187A KR 940027187 A KR940027187 A KR 940027187A KR 1019940011756 A KR1019940011756 A KR 1019940011756A KR 19940011756 A KR19940011756 A KR 19940011756A KR 940027187 A KR940027187 A KR 940027187A
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thin film
silicon film
substrate
metal element
amorphous silicon
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KR1019940011756A
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KR0180573B1 (en
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장홍용
도루 다카야마
야스히코 다케무라
아키하루 미야나가
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야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 겐큐쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

니켈이 비정질 실리콘막 위에서 화소 섹션외의 주변회로 섹션의 예정된 영역이 도입되어 그 영역으로부터 비정질막을 결정화시킨다.Nickel is introduced over the amorphous silicon film into a predetermined region of the peripheral circuit section other than the pixel section to crystallize the amorphous film from the region.

게이트전극 및 다른 소스, 드레인 및 채널이 불순물도핑에 의해 형성된 후, 레이저가 결정화를 개선시키기 위하여 조사된다. 그후, 전극/배선이 형성된다.After the gate electrode and other sources, drains and channels are formed by impurity doping, a laser is irradiated to improve crystallization. Thereafter, an electrode / wiring is formed.

이에의해, 주변회로 섹션안의 박막 트랜지스터가 캐리어의 흐름에 평행한 방향으로 결정이 성장된 결정성 실리콘으로 구성되고 화소 섹션안의 TFTs는 비정질 실리콘막으로 구성된 활성 매트릭스타입 액정 디스플레이가 얻어질 수 있다.Thereby, an active matrix type liquid crystal display in which the thin film transistor in the peripheral circuit section is composed of crystalline silicon in which crystals are grown in a direction parallel to the flow of the carrier and the TFT s in the pixel section is composed of an amorphous silicon film can be obtained.

Description

반도체 장치 및 그 제조방법Semiconductor device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명의 실시예에 따라 액정 디스플레이의 개략적 구조를 보여 주는 도면, 제 2A 내지 2D도는 본 발명의 실시예에 따라 액정 디스플레이의 주변 회로섹션을 포함하는 NTFT 및 PTFT가 상보적으로 형성된 회로를 제조하는 공정을 보여주는 도면이다.1 is a view showing a schematic structure of a liquid crystal display according to an embodiment of the present invention, Figures 2A to 2D is a circuit complementary to the NTFT and PTFT comprising a peripheral circuit section of the liquid crystal display according to an embodiment of the present invention Is a view showing a process for manufacturing.

Claims (13)

기판 및 기판상에 형성된 다수의 박막 트랜지스터를 포함하고, 다수의 박막 트랜지스터의 일부분이 기판의 표면에 대략 평행하게 결정 성장된 결정성 실리콘 막을 가지며 다수 박막 트랜지스터의 나머지 부분이 비정질 실리콘 막을 갖는 반도체 장치.A semiconductor device comprising a substrate and a plurality of thin film transistors formed on the substrate, wherein a portion of the plurality of thin film transistors has a crystalline silicon film crystal grown approximately parallel to a surface of the substrate, and the remaining portion of the plurality of thin film transistors has an amorphous silicon film. 기판 및 기판상에 형성된 다수의 박막 트랜지스터로 포함하고, 다수의 박막 트랜지스터의 일부분이 활성 매트릭스타입 액정 디스플레이의 주변 회로 섹션으로서 제공되고, 박막 트랜지스터의 나머지 부분이 활성 매트릭스타입 액정 디스플레이의 화소 섹션으로서 제공되며, 주변 회로 섹션으로서 제공되는 박막 트랜지스터가 기판의 표면에 평행한 방향에서 결정 성장된 결정성 실리콘 막을 갖고, 화소 섹션으로서 제공된 박막 트랜지스터가 비정질 실리콘막을 갖는 반도체 장치.A substrate and a plurality of thin film transistors formed on the substrate, wherein a portion of the plurality of thin film transistors is provided as a peripheral circuit section of an active matrix type liquid crystal display, and the remaining portion of the thin film transistors is provided as a pixel section of an active matrix type liquid crystal display. And the thin film transistor provided as the peripheral circuit section has a crystalline silicon film crystal-grown in a direction parallel to the surface of the substrate, and the thin film transistor provided as the pixel section has an amorphous silicon film. 기판상에 실질적인 비정질 실리콘막을 형성하는 단계, 비정질 실리콘막의 형성전 또는 형성후에 한영역에 결정화를 촉진하는 금속원소를 선택적으로 도입하는 단계 및 비정질 실리콘 막을 가열에 의해 결정화시키는 단계를 포함하고, 결정 성장이 상기 영역으로부터 기판의 표면에 대략 평행한 방향으로 수행되고, 어떤 금속 원소도 선택적으로 도입되지 않는 다른 영역은 비정질 실리콘막을 갖는 반도체 장치 제조방법.Forming a substantially amorphous silicon film on the substrate, selectively introducing a metal element that promotes crystallization in one region before or after the formation of the amorphous silicon film, and crystallizing the amorphous silicon film by heating, crystal growth And the other region which is carried out from this region in a direction substantially parallel to the surface of the substrate, and in which no metallic element is selectively introduced, has an amorphous silicon film. 기판상에 실질적 비정질 실리콘 막을 형성한 단계, 비정질 실리콘 막의 형성전 또는 형성후 결정화를 촉진시키는 금속원소를 선택적으로 도입하는 단계, 및 금속 원소가 선택적으로 도입된 영역으로부터 기판의 표면에 대략 평행한 방향으로 가열에 의해 비정질 실리콘막을 결정화 및 설장시키는 단계를 포함하고, 어떤 금속원소도 선택적으로 도입되지 않는 다른 영역은 비정질 실리콘막을 가지며, 박막 트랜지스터는 결정성장의 방향과 함께 박막 트랜지스터인의 캐리어 이동방향에 대략 평행한 영역에서 형성되고, 다른 박막 트랜지스터는 다른 영역상에 형성되는 활성 매트릭스타입 액정 디스플레이용으로 사용되는 반도체 장치 제조방법.Forming a substantially amorphous silicon film on the substrate, selectively introducing a metal element to promote crystallization before or after the formation of the amorphous silicon film, and a direction approximately parallel to the surface of the substrate from the region where the metal element is selectively introduced And crystallizing and mounting the amorphous silicon film by heating, wherein another region where no metal element is selectively introduced has an amorphous silicon film, and the thin film transistor is in the carrier movement direction of the thin film transistor together with the direction of crystal growth. A semiconductor device manufacturing method for use in an active matrix type liquid crystal display formed in a substantially parallel region, wherein another thin film transistor is formed on another region. 제 3 항에 있어서, 금속원소가 니켈을 갖는 방법.The method of claim 3 wherein the metal element has nickel. 제 4 항에 있어서, 금속원소가 니켈을 갖는 방법.The method of claim 4 wherein the metal element has nickel. 제 3 항에 있어서, 가열 온도범위가 450° 내지 550℃인 방법.The method of claim 3 wherein the heating temperature range is 450 ° to 550 ° C. 제 3 항에 있어서, 가열 온도범위가 450° 내지 550℃인 방법.The method of claim 3 wherein the heating temperature range is 450 ° to 550 ° C. 제 3 항에 있어서, 레이저 또는 동등한 강광(strong light)이 가열에 의해 결정화한 후 금속 원소가 도입된 영역 및 그 주위에 선택적으로 조사되는 방법.4. A method according to claim 3, wherein the laser or equivalent strong light is selectively irradiated to and around the region into which the metal element is introduced after crystallization by heating. 제 4 항에 있어서, 레이저 또는 동등한 강광이 가열에 의해 결정화된 후 금속 원소가 도입된 주변회로 영역 및 그 주위에 선택적으로 조사되는 방법.The method according to claim 4, wherein the laser or equivalent light beam is selectively irradiated to and around the peripheral circuit region into which the metal element is introduced after crystallization by heating. 제 3 항에 있어서, 금속원소가 금속 원소를 함유하는 물질을 적용 또는 스핀 코팅에 의해 도입되는 방법.4. The method of claim 3, wherein the metal element is introduced by applying or spin coating a material containing the metal element. 제 4 항에 있어서, 금속원소가 금속 원소를 함유하는 물질을 적용 또는 스핀 코팅에 의해 도입되는 방법.The method according to claim 4, wherein the metal element is introduced by applying or spin coating a material containing the metal element. 다수의 화소 전극을 갖는 화소 섹션 및 각 화소 전극을 구동하기 위한 구동회로수단을 포함하고, 화소 전극 섹션 및 구동 회로 수단이 각각 기판을 갖는 박막 트랜지스터들로 구성되고, 화소 섹션을 구성하는 박막 트랜지스터들은 각각 기판의 표면에 대략 평행하게 결정성장된 결정성 실리콘 막을 갖고 구동회로 수단을 구성하는 박막 트랜지스터들은 각각 비정질 실리콘막을 갖는 활성 매트릭스타입 액정디스플레이.A pixel section having a plurality of pixel electrodes and driving circuit means for driving each pixel electrode, wherein the pixel electrode section and the driving circuit means are each composed of thin film transistors having a substrate, and the thin film transistors constituting the pixel section An active matrix type liquid crystal display each having a crystalline silicon film that is crystal-grown approximately parallel to the surface of the substrate, and the thin film transistors constituting the driving circuit means each having an amorphous silicon film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940011756A 1993-05-26 1994-05-26 Semiconductor device including a plurality of thin film transistor at least some of which have a crystalline silicon KR0180573B1 (en)

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Publication number Priority date Publication date Assignee Title
TW451284B (en) 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP3992976B2 (en) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
DE10217876A1 (en) * 2002-04-22 2003-11-06 Infineon Technologies Ag Process for the production of thin metal-containing layers with low electrical resistance
US7524688B2 (en) * 2002-05-22 2009-04-28 Tpo Hong Kong Holding Limited Active matrix display devices and the manufacture thereof
JP2004363241A (en) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd Method and apparatus for forming crystallized semiconductor layer and method for manufacturing semiconductor device
KR100514181B1 (en) * 2003-09-03 2005-09-13 삼성에스디아이 주식회사 series thin film transistor, active matrix oled using the same and fabrication method of the active matrix oled
CN101140940A (en) * 2006-08-18 2008-03-12 株式会社液晶先端技术开发中心 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors
CN101419986B (en) * 2008-12-05 2011-05-11 北京时代民芯科技有限公司 Double edge total dose resistant radiation reinforcement pattern construction preventing edge electricity leakage
TWI543358B (en) * 2014-01-13 2016-07-21 友達光電股份有限公司 Pixel of display panel

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162224A (en) * 1979-06-06 1980-12-17 Toshiba Corp Preparation of semiconductor device
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
DE3587100T2 (en) * 1984-10-09 1993-09-09 Fujitsu Ltd METHOD FOR PRODUCING AN INTEGRATED CIRCUIT BASED ON THE SEMICONDUCTOR ON ISOLATOR TECHNOLOGY.
JPS61102628A (en) * 1984-10-25 1986-05-21 Sony Corp Liquid crystal display device
JP2655865B2 (en) * 1988-03-16 1997-09-24 株式会社日立製作所 Manufacturing method of liquid crystal display device
JP2653099B2 (en) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 Active matrix panel, projection display and viewfinder
JPH0227320A (en) * 1988-07-18 1990-01-30 Hitachi Ltd Thin film semiconductor display device and its manufacture
JPH0252419A (en) * 1988-08-16 1990-02-22 Sony Corp Manufacture of semiconductor substrate
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
JP3280420B2 (en) * 1992-07-30 2002-05-13 株式会社紀文フードケミファ Calcium absorption promoting composition containing soy milk

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CN100501980C (en) 2009-06-17
CN1881568A (en) 2006-12-20
TW281786B (en) 1996-07-21
CN1058584C (en) 2000-11-15
CN100350627C (en) 2007-11-21
CN100379017C (en) 2008-04-02
KR0180573B1 (en) 1999-03-20
CN1258104A (en) 2000-06-28
CN1258102A (en) 2000-06-28

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