KR940022714A - 결점 개선된 CoSi₂를 형성함으로써 디이프 서브 - 마이크론 MOSFET에서 규화접합을 형성하는 방법 - Google Patents

결점 개선된 CoSi₂를 형성함으로써 디이프 서브 - 마이크론 MOSFET에서 규화접합을 형성하는 방법 Download PDF

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KR940022714A
KR940022714A KR1019940004163A KR19940004163A KR940022714A KR 940022714 A KR940022714 A KR 940022714A KR 1019940004163 A KR1019940004163 A KR 1019940004163A KR 19940004163 A KR19940004163 A KR 19940004163A KR 940022714 A KR940022714 A KR 940022714A
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헨리히 짜이닝어
크리스토프 젤러
우도 쉬발케
우베 되블러
윌프레드 해치
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발도르프, 피켄셔
지멘스 악티엔게젤샤프트
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    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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Abstract

디프 서브미크론 결점이 개선된 CoSi2형성 및 개선된 규화 접합을 제공하는 방법, 확산 윈도우를 가진 실리콘 웨이퍼는 플루오르화 수소산으로 첫 번째로 사전 세척된다. HF사전 세척후에, 실리콘 웨이퍼는 통상적인 코발트 스퍼터링 용기안으로 이송되고, 극히 얕은 손상 영역을 형성하도록 낮은 에너지 Ar+이온으로의 충돌에 의해 스퍼터링 세척된다. 스퍼터링 세척후, 스퍼터링 용기에서 실리콘 웨이퍼를 옮기지 않고 코발트 금속이 실온에서 실리콘 웨이퍼 위에 증착되어 CoSi2층이 확산 윈도우 안에 형성된다.

Description

결점 개선된 CoSi2를 형성함으로써 디이프 서브-마이크론 MOSFET에서 규화접합을 형성하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 실시예에 따른 디이프 서브-마이크론 MOSFET에서 규화집합을 형성하는 방법에 대한 흐름도를도시한다.

Claims (16)

  1. 디프 서브미크론 MOSFET 규화 접합을 형성하는 방법에 있어서, 실리콘 웨이퍼를 플루오르화 수소산으로 사전 세척하는 단계와, 사전세척후, 실리콘 웨이퍼를 스퍼터링 용기에 이송하는 단계와 : 스퍼터링용기에서, 실리콘 웨이퍼를 저 에너지 Ar+이온의 충돌로 스퍼터링 세척하는 단계와 : 스퍼터링 세척후 스퍼터링 용기에서 실리콘 웨이퍼를 옮기지 않은채, 코발트 규화물(CoSi2)층을 형성하도록 실리콘 웨이퍼 위에 코발트 금속을 증착하는 단계를 포함하는 것을 특징으로 하는 디프 서브미크론 MOSFET에 규화 접합을 형성하는 방법.
  2. 제1항에 있어서, 저 에너지 Ar+이온으로의 충돌은 1μA의 약 1,5keV에서 일어나는 것을 특징으로 하는 디프 서브미크론 MOSFET에 규화 접합을 형성하는 방법.
  3. 제1항에 있어서, 코발트 금속의 증착은 실온에서 수행되는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  4. 제1항에 있어서, CoSi2층은 어떤 추후 소결단계없이 코발트 금속의 증착동안 형성되는 것을 특징으로 하는 디프 서브미크론 MOSFET규화 접합을 형성하는 방법.
  5. 제2항에 있어서, 저 에너지 Ar+이온의 충돌은 15분 정도 동안에 일어나는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  6. 제4항에 있어서, 코발트 금속의 증착동안 형성된 CoSi2은 30 나노미터 이하의 깊이인 것을 특징으로 하는 디프 서브미크론 MOSFET규화 접합을 형성하는 방법.
  7. 서브미크론 MOSFET에 있어서, 평방미터당 5오옴정도의 낮은 시트저항 및 1500옹스트롱 이하의 접합을 가지며, 규소화합물 덩어리가 없는 것을 특징으로 하는 서브미크론 MOSFET.
  8. 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법에 있어서, 실리콘 웨이퍼를 플루오르화 수소산으로 사전 세척하는 단계와 : 사전 세척후, 실리콘 웨이퍼를 코발트 스퍼터링 용기안으로 이송하는 단계와 : 코발트 스퍼터링 용기안에서, 실리콘 웨이퍼를 낮은 에너지 이온으로 스퍼터링 세척하는 단계와 : 스퍼터링 세척후, 어떤 추후 소결단계도 없이 코발트 규화물(CoSi2)층을 형성하기 위하여 실리콘 웨이퍼 위에 코발트 금속을 증착하는 단계를 포함하는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  9. 제8항에 있어서, 실리콘 웨이퍼는 상기 웨이퍼 위에 형성된 확산 윈도우를 가지며, 확산 윈도우에 의해 노출된 실리콘 웨이퍼의 7개의 단조층에 대해 단기 3개층만이 손상을 입는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  10. 제8항에 있어서, 낮은 에너지 이온으로의 충돌은 1μA의 약 1.5keV에서 Ar+이온을 사용해서 수행되는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  11. 제8항에 있어서, 코발트 금속의 증착은 실온에서 수행되는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  12. 제8항에 있어서, 낮은 에너지 이온으로의 충돌은 약 10 내지 15분동안 약 1μA의 약 1.5keV에서 Ar+이온을 사용해서 수행되는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  13. 제8항에 있어서, 코발트 금속의 증착동안 형성된 CoSi2은 30 나노미터 이하의 깊이를 가지는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  14. 제10항에 있어서, 낮은 에너지 이온으로의 충돌은 10분 또는 그 이하동안 일어나며, Ar+이온을 사용해서 수행되는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  15. 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법에 있어서, 웨이퍼에 형성된 확산 윈도우를 가진 실리콘 웨이퍼를 플루오르화 수소산으로 사전 처리하는 단계와 : 사전처리후, 실리콘 웨이퍼를 코발트 스퍼터링 용기에 이송하는 단계와 : 코발트 스퍼터링 용기안에서, 확산 윈도우안에 있는 실리콘 단조층 정도만을 손상하도록 Ar+이온으로의 충돌에 의해 실리콘 웨이퍼를 스퍼터링 세척하는 단계와 : 스퍼터링 세척후 웨이퍼를 코발트 스퍼터링 용기에서 옮기지 않은채 실리콘 웨이퍼 위에 코발트 금속을 증착하는 단계를 포함하는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
  16. 제15항에 있어서, 코발트 금속은 증착은 실온에서 수행되는 것을 특징으로 하는 디프 서브미크론 MOSFET에서 규화 접합을 형성하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940004163A 1993-03-05 1994-03-04 결함이개선된CoSi2형성에의한디프(deep)서브-미크론MOSFET의실리사이드화접합부형성방법및MOSFET반도체소자 KR100364919B1 (ko)

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US8/026,944 1993-03-05
US08/026,944 1993-03-05
US08/026,944 US5344793A (en) 1993-03-05 1993-03-05 Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation

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EP0616361A1 (en) 1994-09-21
ATE194729T1 (de) 2000-07-15
KR100364919B1 (ko) 2003-02-26
TW267242B (ko) 1996-01-01
EP0616361B1 (en) 2000-07-12
JPH06302545A (ja) 1994-10-28
US5780929A (en) 1998-07-14
DE69425171D1 (de) 2000-08-17

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