KR940020412A - Voltage Drop Circuit to be Built in Semiconductor IC Chip - Google Patents

Voltage Drop Circuit to be Built in Semiconductor IC Chip Download PDF

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KR940020412A
KR940020412A KR1019940002422A KR19940002422A KR940020412A KR 940020412 A KR940020412 A KR 940020412A KR 1019940002422 A KR1019940002422 A KR 1019940002422A KR 19940002422 A KR19940002422 A KR 19940002422A KR 940020412 A KR940020412 A KR 940020412A
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voltage
control signal
circuit
output
terminal
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KR970010643B1 (en
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아끼라 다나베
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세끼모또 타다히로
닛본덴기 가부시끼가이샤
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H19/00Networks using time-varying elements, e.g. N-path filters
    • H03H19/004Switched capacitor networks

Abstract

본 발명은 분압기와 전압 비교기를 포함하는 고집적 IC칩에 내장될 전압 강하 회로에 관한 것이다. 분압기의 분할된 출력 전압(VINT)와 비교 기준 전압(VREF)는 전압 비교기의 각각의 입력 단자(-) 및 (+)에 인가된다. 전압 비교기의 출력 신호는, 제어 펄스를 발생시키고 이 제어 펄스에 의해 분압기의 분압기구간에 있는 캐패시터의 접속을 제어하여 분할된 출력 전압(VINT)를 부하 회로에 공급하기 위해서 분압기의 제어 신호 발생기 구간에 공급된다. 이 경우에, 캐패시터들은 외부 전압으로부터 내부 회로용의 전압을 발생시키기 위한 분압 부재로서 사용된다. 따라서, 전력 손실은 감소될 수 있고 캐패시터의 이용 효율은 증가된다. 그러므로, 전압 강하 회로는 고집적 IC칩에 적합하다.The present invention relates to a voltage drop circuit to be embedded in an integrated IC chip including a voltage divider and a voltage comparator. The divided output voltage VINT and the comparison reference voltage VREF of the voltage divider are applied to respective input terminals (-) and (+) of the voltage comparator. The output signal of the voltage comparator generates a control pulse to the control signal generator section of the voltage divider to control the connection of the capacitors in the voltage divider of the voltage divider to supply the divided output voltage VINT to the load circuit. Supplied. In this case, capacitors are used as voltage divider members for generating a voltage for an internal circuit from an external voltage. Thus, power loss can be reduced and the utilization efficiency of the capacitor is increased. Therefore, the voltage drop circuit is suitable for highly integrated IC chips.

Description

반도체 집적 회로 칩 내장형 전압 강하 회로(Voltage Drop Circuit to be Built in Semiconductor IC Chip)Voltage Drop Circuit to be Built in Semiconductor IC Chip

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4a도는 본 발명에 따른 전압 강하 회로의 제1실시예의 블럭도.4a is a block diagram of a first embodiment of a voltage drop circuit according to the present invention;

Claims (9)

외부 전원 전압을 입력하기 위한 제1단자, 기준 전압으로 유지될 제2단자, 및 상기 제1 및 제2단자들에 접속된 예정된 기능을 갖는 내부 회로를 포함하는 반도체 집적 회로 칩에 내장되어 있으며, 상기 외부 전원 전압을 강하시키고 이강하된 전압을 상기 내부 회로에 인가시키는 전압 강하 회로에 있어서, (A) (a) 동일한 용량을 갖는 제1 및 제2캐패시터들, (b) 상기 제1 및 제2캐패시터들의 전극들 중 한 전극과 제1단자와의 사이, 그리고 상기 제1 및 제2캐패시터들의 전극들 중 다른 전극과 제2단자와의 사이에 삽입되며 제어 신호에 응답하여 선택적으로 도전되는 2쌍의 제1스위치 소자들, (c)상기 제1캐패시터의 한 전극과 상기 제2캐패시터의 다른 전극과의 사이, 그리고 상기 제1캐패시터의 다른 전극과 상기 제2캐패시터의 한 전극과의 사이에 삽입되며 상기 제어 신호에 응답하여 선택적으로 도전되는 1쌍의 제2스위치 소자들, (d) 상기 제1캐패시터의 한 전극과 상기 제2캐패시터의 한 전극과의 사이에 직렬로 삽입되며 상기 제어 신호에 응답하여 선택적으로 도전되는 1쌍의 제3스위치 소자들, (e) 1쌍의 제3스위치 소자들 사이의 접속점에 접속되고 상기 내부 회로에 접속된 출력 단자 및 (f) 상기 제1 및 제2캐패시터들이 제1단자로부터 공급된 외부 전원 전압에 의해 교대로 충전되고 이 충전에 대한 상보적 방식으로 상기 출력 단자로부터 상기 내부 회로로 교대로 방전되도록 제1, 제2 및 제3스위치 소자들의 도전 상태들을 제어하기 위해 제어 신호를 발생하기 위한 제어 신호 발생 수단을 포함하는 분압기 회로 및 (B) 상기 내부 회로로 출력된 방전 전압과 예정된 비교 기준 전압과의 사이의 비교 결과에 따라 상기 제어 신호 발생 수단 내의 제어 신호 발생을 제어하기 위해 접속 제어 신호를 발생시키는 접속 제어 신호 발생 수단을 포함하는 것을 특징으로 하는 전압 강하 회로.Is embedded in a semiconductor integrated circuit chip comprising a first terminal for inputting an external power supply voltage, a second terminal to be maintained at a reference voltage, and an internal circuit having a predetermined function connected to the first and second terminals, A voltage drop circuit for dropping the external power supply voltage and applying the dropped voltage to the internal circuit, wherein (A) (a) first and second capacitors having the same capacitance, (b) the first and second Two pairs inserted between one of the electrodes of the capacitors and the first terminal and between the other of the electrodes of the first and second capacitors and the second terminal and selectively conducting in response to a control signal First switch elements of (c) are inserted between one electrode of the first capacitor and another electrode of the second capacitor and between the other electrode of the first capacitor and one electrode of the second capacitor And award A pair of second switch elements selectively conductive in response to a control signal, (d) being inserted in series between one electrode of the first capacitor and one electrode of the second capacitor and in response to the control signal (E) an output terminal connected to the connection point between the pair of third switch elements, (e) connected to the internal circuit, and (f) the first and second capacitors Controlling the conductive states of the first, second and third switch elements to be alternately charged by an external power supply voltage supplied from the first terminal and alternately discharged from the output terminal to the internal circuit in a manner complementary to this charging A voltage divider circuit comprising a control signal generating means for generating a control signal, and (B) according to a comparison result between a discharge voltage output to the internal circuit and a predetermined comparison reference voltage And a connection control signal generation means for generating a connection control signal for controlling the generation of the control signal in the control signal generation means. 제1항에 있어서, 상기 접속 제어 신호 발생 수단이 제1 및 제2 입력 단자들을 갖는 전압 비교기 수단; 상기 비교 기준 전압을 발생하도록 상기 외부 전원 전압을 분할하기 위해 상기 제1단자에 접속된 분압 수단 및 상기 전압 비교기 수단의 상기 제1입력 단자를 상기 출력 단자에 접속하고 상기 전압 비교기 수단의 상기 제2입력 단자를 상기 분압 수단에 접속하기 위한 배선 수단을 포함하는 것을 특징으로 하는 전압 강하 회로.2. The apparatus of claim 1, wherein said connection control signal generating means comprises: voltage comparator means having first and second input terminals; A voltage divider connected to the first terminal and the first input terminal of the voltage comparator means connected to the output terminal to divide the external power supply voltage to generate the comparison reference voltage and the second of the voltage comparator means And a wiring means for connecting an input terminal to the voltage dividing means. 제1항에 있어서, 상기 제어 신호들이 상기 제1 및 제2캐패시터들의 교대의 충전 및 방전 주기 동안에 전연부 및 후연부에서 중첩되지 않도록 구성되는 것을 특징으로 하는 전압 강하 회로.2. The voltage drop circuit according to claim 1, wherein the control signals are configured not to overlap at leading and trailing edges during alternating charging and discharging periods of the first and second capacitors. 제1항에 있어서, 상기 내부 회로가 판독 사이클의 전연부와 동기되는 프리챠지 제어 펄스에 응답하여 프리챠지 전압을 입력하기 위한 메모리 셀 어레이를 포함하는 대용량 동적 랜덤 억세스 메모리이로 상기 출력 단자는 상기 동적 랜덤 억세스 메모리의 감지 증폭기에 접속되고, 상기 제1단자와 상기 출력 단자 사이에 삽입되며 상기 프리챠지 제어 펄스에 응답하여 선택적으로 도전되는 제4스위치 소자를 더 포함하는 것을 특징으로 하는 전압 강하 회로.2. The large capacity dynamic random access memory of claim 1, wherein the internal circuitry comprises a memory cell array for inputting a precharge voltage in response to a precharge control pulse synchronized with the leading edge of a read cycle. And a fourth switch element connected to the sense amplifier of a random access memory and inserted between the first terminal and the output terminal and selectively conducting in response to the precharge control pulse. 제2항에 있어서, 상기 내부 회로가 비교적 중(重)전류(heavy-current)에 의해 동작가능한 증부하 동작 주기 및 비교적 경(經)전류(light-current)에 의해 동작가능한 경부하 동작 주기를 포함하고 상기 출력 단자상의 출력 전압을 변화시키기 쉬운 대용량 동적 랜덤 억세스 메모리의 회로이고, 상기 출력 전압을 비교 기준 전압보다 낮은 추가 비교 기준 전압과 비교하기 위한 추가 전압 비교기 수단 및 상기 제1단자와 상기 출력 단자 사이에 삽입되고 상기 추가 전압 비교기 수단의 출력에 응답하여 선택적으로 도전되는 스위치 소자를 더 포함하는 것을 특징으로 하는 전압 강하 회로.3. The method of claim 2, wherein the internal circuitry comprises an increase load operation cycle operable by a relatively heavy-current and a light load operation cycle operable by a relatively light-current. A circuit of a large-capacity dynamic random access memory, comprising: a large dynamic random access memory which is easy to change an output voltage on said output terminal, said additional voltage comparator means for comparing said output voltage with an additional comparison reference voltage lower than a comparison reference voltage and said first terminal and said output; And a switch element inserted between the terminals and selectively conductive in response to the output of said additional voltage comparator means. 제5항에 있어서, 상기 증부하 동작 주기 및 상기 경부하 동작 주기를 검출하기 위해서 상기 추가 전압 비교기 수단의 출력에 접속되고 상기 추가 전압 비교기 수단의 출력에 나타나는 펄스 출력의 반복 주파수를 검출하는 주파수 카운터 및 상기 주파수 카운터의 출력에 응답하여 선택적으로 동작 상태가 되고 상기 출력이 상기 스위치 소자에 공급되도록 상기 추가 전압 비교기 수단을 제어하기 위한 수단을 더 포함하는 것을 특징으로 하는 전압 강하 회로.6. A frequency counter according to claim 5, wherein the frequency counter is connected to an output of said additional voltage comparator means and detects a repetition frequency of a pulse output appearing at the output of said additional voltage comparator means for detecting said increase load operation period and said light load operation period. And means for controlling said additional voltage comparator means to be selectively operated in response to an output of said frequency counter and to provide said output to said switch element. 제2항에 있어서, 상기 제어 신호 발생 수단이 1쌍의 입력 단자들 중 한 단자에서 상기 전압 비교기 수단의 출력을 입력하기 위한 제1쌍안정 회로, 1쌍의 입력 단자들에서 상기 제1쌍안정 회로의 1쌍의 출력들을 입력시키고 접속 제어 신호로서 상기 출력들을 상기 분압 수단에 공급하는 제2쌍안정 회로 및 상기 접속 제어 신호에 지연을 제공하고 펄스폭 변환을 실행하여 펄스폭 변환 신호를 상기 제1쌍안정 회로의 상기 1쌍의 입력 단자들 중 다른 입력 단자에 공급하는 논리 회로를 포함하는 것을 특징으로 하는 전압 강하 회로.3. A first bistable circuit according to claim 2, wherein said control signal generating means is adapted to input an output of said voltage comparator means at one of a pair of input terminals, said first bistable at one pair of input terminals. A second bistable circuit for inputting a pair of outputs of the circuit and supplying the outputs to the voltage dividing means as a connection control signal and providing a delay to the connection control signal and performing pulse width conversion to generate a pulse width converted signal; And a logic circuit for supplying the other input terminal of the pair of input terminals of the pair bistable circuit. 제2항에 있어서, 상기 전압 비교기 수단의 출력에 접속되어, 예정된 지연을 상기 접속 제어 신호에 제공하기 위한 지연 접속 제어 신호를 출력하는 1개 이상의 지연 회로 및 상기 분압기 회로와 동일한 구성을 갖고 있으며, 상기 분압기 회로의 대응하는 상기 제1 및 출력 단자들에 접속된 제1 및 제2단자들을 포함하고, 상기 분압기 회로의 제어 신호 발생 수단에 대응하는 제어 신호 발생 수단에 의해 상기 지연 접속 제어 신호를 입력하는 1개 이상의 종속 분압기 회로를 더 포함하는 것을 특징으로 하는 전압 강하 회로.3. The apparatus according to claim 2, having one or more delay circuits connected to an output of said voltage comparator means for outputting a delayed connection control signal for providing a predetermined delay to said connection control signal, and said voltage divider circuit, Inputting the delayed connection control signal by means of a control signal generation means comprising first and second terminals connected to corresponding first and output terminals of the voltage divider circuit and corresponding to the control signal generation means of the voltage divider circuit; The voltage drop circuit further comprises at least one dependent voltage divider circuit. 제8항에 있어서, 3개의 지연 회로들과 3개의 종속 분압기 회로들이 제공되는 것을 특징으로 하는 전압 강하 회로.9. The voltage drop circuit as claimed in claim 8, wherein three delay circuits and three dependent voltage divider circuits are provided. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940002422A 1993-02-10 1994-02-08 Voltage drop circuit to be built in semiconductor ic chip KR970010643B1 (en)

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JP5022232A JP2500422B2 (en) 1993-02-10 1993-02-10 Step-down circuit for built-in semiconductor IC chip
JP93-022232 1993-02-10

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KR940020412A true KR940020412A (en) 1994-09-16
KR970010643B1 KR970010643B1 (en) 1997-06-28

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EP (1) EP0610939B1 (en)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100691351B1 (en) * 2005-07-25 2007-03-12 삼성전자주식회사 Semiconductor integrated circuit

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4443690A1 (en) * 1994-12-08 1996-06-20 Martin Prof Dr Poppe Monolithic integrated circuit for direct transformation of DC voltages
US5764094A (en) * 1995-06-02 1998-06-09 Matsushita Electric Industrial Co., Ltd. Level shift circuit for analog signal and signal waveform generator including the same
US5831910A (en) * 1995-08-18 1998-11-03 Hitachi, Ltd. Semiconductor integrated circuit utilizing overdriven differential amplifiers
US5764580A (en) * 1995-08-18 1998-06-09 Hitachi, Ltd. Semiconductor integrated circuit
US5719524A (en) * 1995-10-11 1998-02-17 Telcom Semiconductor, Inc. Circuit having an input terminal for controlling two functions
US5856918A (en) * 1995-11-08 1999-01-05 Sony Corporation Internal power supply circuit
JP3591107B2 (en) * 1996-01-19 2004-11-17 富士通株式会社 Power supply step-down circuit and semiconductor device
EP0960469A4 (en) * 1997-02-11 2000-09-27 Foxboro Co Charged pump for dividing input voltage and multiplying output current
US6194944B1 (en) * 1999-04-29 2001-02-27 National Semiconductor Corporation Input structure for I/O device
US6310789B1 (en) * 1999-06-25 2001-10-30 The Procter & Gamble Company Dynamically-controlled, intrinsically regulated charge pump power converter
JP3773718B2 (en) * 1999-09-20 2006-05-10 株式会社東芝 Semiconductor integrated circuit
AU2001249227A1 (en) * 2000-03-22 2001-10-03 The Board Of Trustees Of The University Of Illinois Ultra-capacitor based dynamically regulated charge pump power converter
JP2002042459A (en) * 2000-07-26 2002-02-08 Mitsubishi Electric Corp Semiconductor integrated circuit device
EP1178585A2 (en) * 2000-08-04 2002-02-06 Matsushita Electric Industrial Co., Ltd. Power source system
KR100675273B1 (en) * 2001-05-17 2007-01-26 삼성전자주식회사 Circuit of controlling voltage level and delay time of a semiconductor memory device
JP3927788B2 (en) * 2001-11-01 2007-06-13 株式会社ルネサステクノロジ Semiconductor device
EP1367702B1 (en) * 2002-05-27 2008-07-30 Bernafon AG Power supply arrangement
US7271646B2 (en) * 2002-09-30 2007-09-18 Magnetrol International, Inc. Loop powered process control instrument power supply
US6731232B1 (en) * 2002-12-27 2004-05-04 Analog Devices, Inc. Programmable input range SAR ADC
KR100699829B1 (en) * 2004-12-09 2007-03-27 삼성전자주식회사 Output buffer of source driver in liquid crystal display device having high slew rate and method for controlling the output buffer
US7764526B1 (en) * 2006-10-18 2010-07-27 Intersil Americas Inc. Hysteretic mode controller for capacitor voltage divider
US7612603B1 (en) * 2007-01-24 2009-11-03 Intersil Americas Inc. Switching frequency control of switched capacitor circuit using output voltage droop
KR100814824B1 (en) * 2007-05-03 2008-03-20 삼성에스디아이 주식회사 Plasma display and driving method thereof
US20090085617A1 (en) * 2007-09-27 2009-04-02 Infineon Technologies Ag Ramp voltage circuit
JP5130904B2 (en) * 2007-12-21 2013-01-30 富士通セミコンダクター株式会社 Electronic circuit device and control method of electronic circuit device
US9423865B2 (en) 2013-09-13 2016-08-23 Globalfoundries Inc. Accelerating microprocessor core wake up via charge from capacitance tank without introducing noise on power grid of running microprocessor cores
US20150077170A1 (en) * 2013-09-13 2015-03-19 International Business Machines Corporation Efficient wakeup of power gated domains through charge sharing and recycling
US9389674B2 (en) 2013-09-13 2016-07-12 International Business Machines Corporation Predictively turning off a charge pump supplying voltage for overdriving gates of the power switch header in a microprocessor with power gating
US9298253B2 (en) 2013-09-13 2016-03-29 Globalfoundries Inc. Accelerating the microprocessor core wakeup by predictively executing a subset of the power-up sequence
JP7091113B2 (en) * 2018-03-30 2022-06-27 ラピスセミコンダクタ株式会社 Semiconductor devices and control methods for semiconductor devices
US20230057051A1 (en) * 2021-08-20 2023-02-23 Semiconductor Components Industries, Llc Self clocked low power doubling charge pump

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1073440B (en) * 1975-09-22 1985-04-17 Seiko Instr & Electronics VOLTAGE LIFT CIRCUIT MADE IN MOS-FET
JPS5858863A (en) * 1981-10-01 1983-04-07 Nec Corp Switched capacitor transformer
JPS6082061A (en) * 1983-10-07 1985-05-10 Nippon Telegr & Teleph Corp <Ntt> Switched capacitor transformer
FR2553545B1 (en) * 1983-10-14 1987-12-18 Efcis EXPONENTIAL INTEGRATER WITH HIGH TIME CONSTANT, REALIZED WITH SWITCHED CAPACITIES
US4754226A (en) * 1983-11-02 1988-06-28 Stanford University Switched capacitor function generator
JPS60254650A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor device
JPS63121467A (en) * 1986-11-07 1988-05-25 Sony Corp Internal voltage divider
JPH01298953A (en) * 1988-05-26 1989-12-01 Matsushita Electric Ind Co Ltd Power source
JPH0758593B2 (en) * 1988-07-06 1995-06-21 松下電器産業株式会社 Sense up circuit
US4868908A (en) * 1988-10-18 1989-09-19 Ventritex Power supply down-conversion, regulation and low battery detection system
JPH03235657A (en) * 1990-02-07 1991-10-21 Sumitomo Metal Ind Ltd Dc-dc converter
US5184031A (en) * 1990-02-08 1993-02-02 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JP2557271B2 (en) * 1990-04-06 1996-11-27 三菱電機株式会社 Substrate voltage generation circuit in semiconductor device having internal step-down power supply voltage
JPH04222455A (en) * 1990-12-20 1992-08-12 Nec Corp Interface circuit
JPH04311898A (en) * 1991-04-10 1992-11-04 Oki Electric Ind Co Ltd Semiconductor device
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
JP3337241B2 (en) * 1991-07-26 2002-10-21 テキサス インスツルメンツ インコーポレイテツド Improved multi-channel sensor interface circuit and manufacturing method thereof
JP2785548B2 (en) * 1991-10-25 1998-08-13 日本電気株式会社 Semiconductor memory
US5341050A (en) * 1992-03-20 1994-08-23 Hughes Aircraft Company Switched capacitor amplifier circuit operating without serially coupled amplifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100691351B1 (en) * 2005-07-25 2007-03-12 삼성전자주식회사 Semiconductor integrated circuit

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EP0610939A1 (en) 1994-08-17
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KR970010643B1 (en) 1997-06-28
US5457421A (en) 1995-10-10

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