KR940016583A - Method for Forming SiO_2 Film on Semiconductor Substrate - Google Patents
Method for Forming SiO_2 Film on Semiconductor Substrate Download PDFInfo
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- KR940016583A KR940016583A KR1019920025029A KR920025029A KR940016583A KR 940016583 A KR940016583 A KR 940016583A KR 1019920025029 A KR1019920025029 A KR 1019920025029A KR 920025029 A KR920025029 A KR 920025029A KR 940016583 A KR940016583 A KR 940016583A
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- film
- sio
- gas
- semiconductor substrate
- forming
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- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체 기판상에 유전체막을 형성하는 방법에 관한 것으로서, 구체적으로는 염소를 기판과 SiO2막의 계면에 주입되게 하는 유전체막 형성방법에 관한 것으로, 실리콘 기판 상에 SiO2막을 형성할때 산화과정의 마지막 단계에서 3~5분간 O2가스에 대한 분율 1~3%정도의 TCA(C2H3CI3) 또는 TCE(C2HCI3)와 O2가스 또는 O3가스의 혼합 가스에서 상기 SiO2막을 형성하여 상기 실리콘기판과 SiO2막 사이의 계면에 Cl가 축적되게 하는 것을 특징으로 하는 유전체막의 형성방법이다.The present invention relates to a method of forming a dielectric film on a semiconductor substrate, and specifically relates to a dielectric film forming method to be injected into a goat in the substrate and the SiO 2 film surface, oxidation to form SiO 2 film on a silicon substrate fractions for 3-5 minutes O 2 gas at the end of the steps 1 to 3% of the TCA (C 2 H 3 CI 3 ) or TCE (C 2 HCI 3) and O in a gas mixture of 2 gas or O 3 gas The SiO 2 film is formed to form Cl at the interface between the silicon substrate and the SiO 2 film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 2 도는 본 발명의 제조방법에 따라 SiO2막을 제조하는 공정을 보인 단면.2 is a cross-sectional view showing a process for producing a SiO 2 film according to the manufacturing method of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920025029A KR960008904B1 (en) | 1992-12-22 | 1992-12-22 | Forming method of silicon oxide film on the semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920025029A KR960008904B1 (en) | 1992-12-22 | 1992-12-22 | Forming method of silicon oxide film on the semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940016583A true KR940016583A (en) | 1994-07-23 |
KR960008904B1 KR960008904B1 (en) | 1996-07-05 |
Family
ID=19346220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920025029A KR960008904B1 (en) | 1992-12-22 | 1992-12-22 | Forming method of silicon oxide film on the semiconductor substrate |
Country Status (1)
Country | Link |
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KR (1) | KR960008904B1 (en) |
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1992
- 1992-12-22 KR KR1019920025029A patent/KR960008904B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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KR960008904B1 (en) | 1996-07-05 |
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