KR940016583A - Method for Forming SiO_2 Film on Semiconductor Substrate - Google Patents

Method for Forming SiO_2 Film on Semiconductor Substrate Download PDF

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Publication number
KR940016583A
KR940016583A KR1019920025029A KR920025029A KR940016583A KR 940016583 A KR940016583 A KR 940016583A KR 1019920025029 A KR1019920025029 A KR 1019920025029A KR 920025029 A KR920025029 A KR 920025029A KR 940016583 A KR940016583 A KR 940016583A
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South Korea
Prior art keywords
film
sio
gas
semiconductor substrate
forming
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KR1019920025029A
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Korean (ko)
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KR960008904B1 (en
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유병곤
유종선
남기수
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양승택
재단법인 한국전자통신연구소
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Abstract

본 발명은 반도체 기판상에 유전체막을 형성하는 방법에 관한 것으로서, 구체적으로는 염소를 기판과 SiO2막의 계면에 주입되게 하는 유전체막 형성방법에 관한 것으로, 실리콘 기판 상에 SiO2막을 형성할때 산화과정의 마지막 단계에서 3~5분간 O2가스에 대한 분율 1~3%정도의 TCA(C2H3CI3) 또는 TCE(C2HCI3)와 O2가스 또는 O3가스의 혼합 가스에서 상기 SiO2막을 형성하여 상기 실리콘기판과 SiO2막 사이의 계면에 Cl가 축적되게 하는 것을 특징으로 하는 유전체막의 형성방법이다.The present invention relates to a method of forming a dielectric film on a semiconductor substrate, and specifically relates to a dielectric film forming method to be injected into a goat in the substrate and the SiO 2 film surface, oxidation to form SiO 2 film on a silicon substrate fractions for 3-5 minutes O 2 gas at the end of the steps 1 to 3% of the TCA (C 2 H 3 CI 3 ) or TCE (C 2 HCI 3) and O in a gas mixture of 2 gas or O 3 gas The SiO 2 film is formed to form Cl at the interface between the silicon substrate and the SiO 2 film.

Description

반도체 기판상에 SiO2막의 형성방법Method of Forming SiO2 Film on Semiconductor Substrate

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명의 제조방법에 따라 SiO2막을 제조하는 공정을 보인 단면.2 is a cross-sectional view showing a process for producing a SiO 2 film according to the manufacturing method of the present invention.

Claims (1)

실리콘 기판(1)상에 SiO2막(2)을 형성할때 산화과정의 마지막 단계에서 3~5분간 O2가스에 대한 분율 1~3%정도의 TCA(trichloroethane ; C2H3CI3) 또는 TCE(trichloroethylene : C2HCI3)와 O2가스 또는 O3가스의 혼합 가스에서 상기 SiO2막(2)을 형성하여 상기 실리콘기판(1)과 SiO2막(2) 사이의 계면에 Cl가 축적되게 하는 것을 특징으로 하는 유전체막의 형성방법.When forming SiO 2 film 2 on silicon substrate 1, trichloroethane (C 2 H 3 CI 3 ) having a fraction of 1 to 3% of O 2 gas at the end of the oxidation process for 3 to 5 minutes. Alternatively, the SiO 2 film 2 may be formed from a mixed gas of TCE (trichloroethylene: C 2 HCI 3 ) and O 2 gas or O 3 gas to form Cl at the interface between the silicon substrate 1 and the SiO 2 film 2. A method for forming a dielectric film, which causes the to accumulate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920025029A 1992-12-22 1992-12-22 Forming method of silicon oxide film on the semiconductor substrate KR960008904B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920025029A KR960008904B1 (en) 1992-12-22 1992-12-22 Forming method of silicon oxide film on the semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920025029A KR960008904B1 (en) 1992-12-22 1992-12-22 Forming method of silicon oxide film on the semiconductor substrate

Publications (2)

Publication Number Publication Date
KR940016583A true KR940016583A (en) 1994-07-23
KR960008904B1 KR960008904B1 (en) 1996-07-05

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KR1019920025029A KR960008904B1 (en) 1992-12-22 1992-12-22 Forming method of silicon oxide film on the semiconductor substrate

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Publication number Publication date
KR960008904B1 (en) 1996-07-05

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