KR970023845A - Thin Film Formation Method - Google Patents

Thin Film Formation Method Download PDF

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Publication number
KR970023845A
KR970023845A KR1019950036111A KR19950036111A KR970023845A KR 970023845 A KR970023845 A KR 970023845A KR 1019950036111 A KR1019950036111 A KR 1019950036111A KR 19950036111 A KR19950036111 A KR 19950036111A KR 970023845 A KR970023845 A KR 970023845A
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KR
South Korea
Prior art keywords
film
less
cvd
thin film
sio
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KR1019950036111A
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Korean (ko)
Inventor
유타카 나카노
나루히코 가지
렘페이 나카타
모토 야부키
Original Assignee
사토 후미오
가부시키가이샤 도시바
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Priority to KR1019950036111A priority Critical patent/KR970023845A/en
Publication of KR970023845A publication Critical patent/KR970023845A/en

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Abstract

본 발명은 유기실란과 O3의 반응에 의한 CVD-SiO2막을 단차피복성, 내HF성 및 내에칭성에 우수함과 더불어 하부의존성 및 패턴의존성 없이 형성하는 박막 형성방법을 제공하기 위한 것이다.The present invention is to provide a thin film formation method for forming a CVD-SiO 2 film formed by the reaction of an organosilane and O 3 with excellent step coverage, HF resistance and etching resistance, and without lower dependency and pattern dependency.

본 발명에 의한 유기실란 - O3반응에 의한 CVD-SiO2막의 형성방법은 먼저 13.5kPa이하의 저압하에서 박막의 제1 CVD-SiO2막(31)을 형성하고, 이어서 상기 저압 보다 높은 압력, 즉 13.5kPa~대기압 이하의 고압하에서 제2 CVD-SiO2막(32)을 형성한다.The method for forming a CVD-SiO 2 film by the organosilane-O 3 reaction according to the present invention firstly forms a first CVD-SiO 2 film 31 of a thin film under a low pressure of 13.5 kPa or less, and then a pressure higher than the low pressure, That is, the second CVD-SiO 2 film 32 is formed under a high pressure of 13.5 kPa to atmospheric pressure or less.

Description

박막형성방법Thin Film Formation Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 실시예를 나타내는 공정 단면도 (a)~(c).2 is a process sectional view (a)-(c) which shows the Example of this invention.

Claims (3)

유기실란과 오존의 반응에 의한 CVD법에 의해 실리콘 산하막을 형성하는 경우에, 13.5kPa이하의 압력하에서 제1실리콘 산화막을 형성하는 제1공정과 13.5kPa보다 큰 대기압 이하의 압력하에서 제2실리콘 산화막을 상기 제1실리콘 산화막상에 형성하는 제2공정을 구비하여 이루어진 것을 특징으로 하는 박막형성방법.In the case of forming the silicon underlayer film by the CVD method by the reaction of the organosilane and ozone, the first silicon oxide film is formed under a pressure of 13.5 kPa or less and the second silicon oxide film under a pressure of atmospheric pressure less than 13.5 kPa or less. And a second step of forming on the first silicon oxide film. 제1항에 있어서, 상기 오존농도가 7 vol% 이상인 것을 특징으로 하는 박막형성방법.The method of claim 1, wherein the ozone concentration is 7 vol% or more. 제1항에 있어서, 상기 제1실리콘 산화막이 20nm이상 100nm이하의 막두께로 형성되는 것을 특징으로 하는 박막형성방법.The method of claim 1, wherein the first silicon oxide film is formed with a film thickness of 20 nm or more and 100 nm or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950036111A 1995-10-19 1995-10-19 Thin Film Formation Method KR970023845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950036111A KR970023845A (en) 1995-10-19 1995-10-19 Thin Film Formation Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950036111A KR970023845A (en) 1995-10-19 1995-10-19 Thin Film Formation Method

Publications (1)

Publication Number Publication Date
KR970023845A true KR970023845A (en) 1997-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950036111A KR970023845A (en) 1995-10-19 1995-10-19 Thin Film Formation Method

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KR (1) KR970023845A (en)

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