KR920020600A - Planarization method of semiconductor device - Google Patents

Planarization method of semiconductor device Download PDF

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Publication number
KR920020600A
KR920020600A KR1019910005716A KR910005716A KR920020600A KR 920020600 A KR920020600 A KR 920020600A KR 1019910005716 A KR1019910005716 A KR 1019910005716A KR 910005716 A KR910005716 A KR 910005716A KR 920020600 A KR920020600 A KR 920020600A
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KR
South Korea
Prior art keywords
oxide film
semiconductor device
etched
upper portion
silicon substrate
Prior art date
Application number
KR1019910005716A
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Korean (ko)
Inventor
양두영
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910005716A priority Critical patent/KR920020600A/en
Publication of KR920020600A publication Critical patent/KR920020600A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음No content

Description

반도체 소자의 평탄화 방법Planarization method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 평탄화 공정 단면도.2 is a cross-sectional view of the planarization process according to the present invention.

Claims (3)

실리콘 기판에 워드라인을 형성한 이후의 공정에 있어서, 표면평탄화를 위해 소정비율의 오존을 포함하는 산소를 TEOS와 반응시켜 생성되는 산화막을 게이트 높이에 상응하는 두께로 전체적으로 증착하는 스텝, 상기 산화막 중 밀도차가 다른 게이트 캡 산화막 상측과 실리콘 기판 상측 부위가 다른 속도로 식각되도록 산화막을 에치하여 표면을 평탄화시키는 스텝이 포함됨을 특징으로 하는 반도체 소자의 평탄화 방법.In the process after forming the word line on the silicon substrate, the step of depositing the oxide film formed by reacting oxygen containing a predetermined proportion of ozone with TEOS to a thickness corresponding to the gate height in the surface of the oxide film, of the oxide film And flattening the surface by etching the oxide film so that the upper portion of the gate cap oxide film having a different density difference and the upper portion of the silicon substrate are etched at different speeds. 제1항에 있어서, 산소에 포함되는 오존은 5%이상인 것을 특징으로 하는 반도체 소자의 평탄화 방법.The method of claim 1, wherein the ozone contained in the oxygen is 5% or more. 제1항에 있어서, 산화막 식각은 약2.4%의 HF용액 또는 프라즈마로 행하는 것을 특징으로 하는 반도체 소자의 평탄화 방법.The method of claim 1, wherein the oxide film is etched with about 2.4% HF solution or plasma. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910005716A 1991-04-10 1991-04-10 Planarization method of semiconductor device KR920020600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910005716A KR920020600A (en) 1991-04-10 1991-04-10 Planarization method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910005716A KR920020600A (en) 1991-04-10 1991-04-10 Planarization method of semiconductor device

Publications (1)

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KR920020600A true KR920020600A (en) 1992-11-21

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KR1019910005716A KR920020600A (en) 1991-04-10 1991-04-10 Planarization method of semiconductor device

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100458700B1 (en) * 2000-12-29 2004-12-03 어플라이드 머티어리얼즈 인코포레이티드 Method for monitoring thickness change in a film on substrate
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
KR100665655B1 (en) * 2004-11-09 2007-01-10 동부일렉트로닉스 주식회사 Method for manufacturing Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US7569119B2 (en) 1992-12-28 2009-08-04 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US7582183B2 (en) 1992-12-28 2009-09-01 Applied Materials, Inc. Apparatus for detection of thin films during chemical/mechanical polishing planarization
KR100458700B1 (en) * 2000-12-29 2004-12-03 어플라이드 머티어리얼즈 인코포레이티드 Method for monitoring thickness change in a film on substrate
KR100665655B1 (en) * 2004-11-09 2007-01-10 동부일렉트로닉스 주식회사 Method for manufacturing Semiconductor device

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