KR940016559A - 다층 레지스트 재작업방법 - Google Patents

다층 레지스트 재작업방법 Download PDF

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Publication number
KR940016559A
KR940016559A KR1019920024911A KR920024911A KR940016559A KR 940016559 A KR940016559 A KR 940016559A KR 1019920024911 A KR1019920024911 A KR 1019920024911A KR 920024911 A KR920024911 A KR 920024911A KR 940016559 A KR940016559 A KR 940016559A
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KR
South Korea
Prior art keywords
resist
electron beam
layer resist
present
relates
Prior art date
Application number
KR1019920024911A
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English (en)
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KR950011174B1 (ko
Inventor
정재근
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019920024911A priority Critical patent/KR950011174B1/ko
Publication of KR940016559A publication Critical patent/KR940016559A/ko
Application granted granted Critical
Publication of KR950011174B1 publication Critical patent/KR950011174B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 다층 레지스트 공정에 관한 것으로, 전자빔으로 패턴을 검시하여 미스얼라인되었을시 다층 레지스트 재작업에 관한 것이다.
종래에는 재공정시 상층 레지스트(1)을 제거하고 다시 그위에 상층 레지스트(1a)를 증착하여 노광하였다.
그러나, 전자빔이 맞는 부분에 상층 레지스터(1a)가 강하게 표면 결합을 갖게하여 레지스트 잔유물이 있게 된다.
본 발명은 상층 레지스트(1)를 제거하고 전자 빔을 맞은 부분을 O2플라즈마 처리하여 중화시킨뒤 상층 레지스터(1a)를 증착하고 노광하여 표면 결합이 없으므로 레지스트 잔유물을 완전히 제거한다.

Description

다층 레지스트 재작업방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 종래의 다층 레지스트 재작업 공정 단면도, 제 2 도는 본 발명에 다층 레지스트 재작업 공정 단면도.

Claims (2)

  1. 기판(4)위에 하층 레지스트(3), 중간층(2), 상층 레지스트(1)를 형성하고 상층 레지스트(1)를 패터닝하고 전자빔으로 검사하여 상층 레지스트를 제작업함에 있어서, 불량 패턴된 상층 레지스트(1)를 제거하고 중간층(2) 표면을 O2플라즈마로 처리하는 공정과, 다시 상층 레지스트(1a)를 증착하고 노광하는 공정을 포함하여 구성됨을 특징으로 하는 다층 레지스트 재작업 방법.
  2. 제 1 항에 있어서, O2플라즈마 조건은 250-500mT에서 RF 파워 100-250W으로 처리함을 특징으로 하는 다층 레지스트 재작업 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920024911A 1992-12-21 1992-12-21 다층 레지스트 재작업 방법 KR950011174B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920024911A KR950011174B1 (ko) 1992-12-21 1992-12-21 다층 레지스트 재작업 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920024911A KR950011174B1 (ko) 1992-12-21 1992-12-21 다층 레지스트 재작업 방법

Publications (2)

Publication Number Publication Date
KR940016559A true KR940016559A (ko) 1994-07-23
KR950011174B1 KR950011174B1 (ko) 1995-09-28

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ID=19346104

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920024911A KR950011174B1 (ko) 1992-12-21 1992-12-21 다층 레지스트 재작업 방법

Country Status (1)

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KR (1) KR950011174B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100350321B1 (ko) * 2000-02-15 2002-08-28 박상준 불량 유기 일렉트로-루미네센스 소자 재생장치 및 이를이용한 유기 일렉트로-루미네센스 소자의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100350321B1 (ko) * 2000-02-15 2002-08-28 박상준 불량 유기 일렉트로-루미네센스 소자 재생장치 및 이를이용한 유기 일렉트로-루미네센스 소자의 제조방법

Also Published As

Publication number Publication date
KR950011174B1 (ko) 1995-09-28

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