KR940012798A - 전압제어 발진회로 - Google Patents

전압제어 발진회로 Download PDF

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Publication number
KR940012798A
KR940012798A KR1019930024779A KR930024779A KR940012798A KR 940012798 A KR940012798 A KR 940012798A KR 1019930024779 A KR1019930024779 A KR 1019930024779A KR 930024779 A KR930024779 A KR 930024779A KR 940012798 A KR940012798 A KR 940012798A
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KR
South Korea
Prior art keywords
circuit
oscillation
transistor
amplifier circuit
voltage controlled
Prior art date
Application number
KR1019930024779A
Other languages
English (en)
Other versions
KR960003560B1 (ko
Inventor
김정훈
Original Assignee
윤종용
삼성전기 주식회사
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Application filed by 윤종용, 삼성전기 주식회사 filed Critical 윤종용
Priority to KR1019930024779A priority Critical patent/KR960003560B1/ko
Publication of KR940012798A publication Critical patent/KR940012798A/ko
Application granted granted Critical
Publication of KR960003560B1 publication Critical patent/KR960003560B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1221—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising multiple amplification stages connected in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0034—Circuit elements of oscillators including a buffer amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0082—Lowering the supply voltage and saving power
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/03—Varying beside the frequency also another parameter of the oscillator in dependence on the frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

외부튜닝전압으로 공진주파수를 결정하는 마이크로 스트립 공진회로와, 상기 마이크로 스트립 공진회로의 공진주파수 신호에 따라 발진을 하는 발진증폭회로와, 상기 발진회로와 부하 사이에 다단 증폭회로로 마련되며 VCO의 로드 폴링을 방지하기 위한 버퍼 증폭회로를 포함하는 전압제어 발진회로에서, 상기 발진증폭회로는 하나의 트랜지스터에 의한 공통 콜렉터 발진회로로 구성하고, 상기 버퍼 증폭회로는 하나의 트랜지스터에 의한 단단증폭회로로 구성하고, 상기 발진 증폭 트랜지스터와 버퍼 증폭 트랜지스터사이에 AC 신호성분을 블로킹하고 일련의 DC 바이어스 통로를 형성하는 RF 쵸크코일과 신호유기용 코일에 의해 캐스코트 증폭회로로 구성함으로써, 전압제어 발진회로의 저전력화, 소형화, 염가화를 달성시킬 수 있다.

Description

전압제어 발진회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 고안의 VCO 회로도이다.

Claims (1)

  1. 외부 튜닝 전압으로 공진주파수를 결정하는 마이크로 스트립 공진회로와, 상기 마이크로 스트립 공진회로의 공진주파수 신호에 따라 발진을 하는 발진 증폭회로와, 상기 발진회로와 부하 사이에 다단 증폭회로로 마련되며 VCO의 로드 폴링을 방지하기 위한 버퍼증폭회로를 포함하는 전압제어 발진회로에 있어서, 상기 발진 증폭회로는 트랜지스터(Q11)에 의한 공통 콜렉터 발진회로로 구성하고, 상기 버퍼 증폭회로는 트랜지스터(Q12)에 의한 일단 증폭회로로 구성하고, 상기 발진증폭 트랜지스터(Q11)와 버퍼 증폭 트랜지스터(Q12)는 AC 신호성분을 블로킹하고 일련의 DC바이어스 통로를 형성하는 RF 쵸크코일(L13)과 발전신호를 유기하기 위한 코일(L15)에 의해 캐스코드 증폭회로로 구성하는 것을 특징으로 하는 전압제어 발진회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930024779A 1992-11-26 1993-11-19 전압제어 발진회로 KR960003560B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930024779A KR960003560B1 (ko) 1992-11-26 1993-11-19 전압제어 발진회로

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR92-22447 1992-11-26
KR920022447 1992-11-26
KR1019930024779A KR960003560B1 (ko) 1992-11-26 1993-11-19 전압제어 발진회로

Publications (2)

Publication Number Publication Date
KR940012798A true KR940012798A (ko) 1994-06-24
KR960003560B1 KR960003560B1 (ko) 1996-03-15

Family

ID=19343969

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930024779A KR960003560B1 (ko) 1992-11-26 1993-11-19 전압제어 발진회로

Country Status (3)

Country Link
US (1) US5440276A (ko)
JP (1) JP2925108B2 (ko)
KR (1) KR960003560B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030054123A (ko) * 2001-12-24 2003-07-02 삼성전기주식회사 제2고조파를 이용한 전압제어 발진회로

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FI97925C (fi) * 1994-06-21 1997-03-10 Nokia Mobile Phones Ltd Virityslineaarisuudeltaan parannettu jänniteohjattu oskillaattori
JP2000059166A (ja) * 1998-08-04 2000-02-25 Murata Mfg Co Ltd 共振回路およびそれを用いた発振回路
JP3707964B2 (ja) 1999-08-31 2005-10-19 アルプス電気株式会社 電圧制御発振器
JP3742267B2 (ja) * 1999-08-31 2006-02-01 アルプス電気株式会社 電圧制御発振器
US6504443B1 (en) 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
JP2002026652A (ja) * 2000-07-11 2002-01-25 Alps Electric Co Ltd 発振器
US6636119B2 (en) * 2000-12-21 2003-10-21 Koninklijke Philips Electronics N.V. Compact cascode radio frequency CMOS power amplifier
US6778016B2 (en) * 2002-11-04 2004-08-17 Koninklijke Philips Eletronics N.V. Simple self-biased cascode amplifier circuit
JP4425886B2 (ja) * 2006-07-27 2010-03-03 住友電工デバイス・イノベーション株式会社 電子回路装置
JP2009065511A (ja) * 2007-09-07 2009-03-26 Fujitsu Ltd 増幅回路及び通信機
US7791422B2 (en) * 2007-10-17 2010-09-07 Autoliv Asp, Inc. Voltage controlled oscillator with cascaded emitter follower buffer stages
JP5820176B2 (ja) * 2011-07-21 2015-11-24 住友電気工業株式会社 電子回路
US8742853B2 (en) * 2011-10-25 2014-06-03 Marvell World Trade Ltd. Low-stress cascode structure
RU194055U1 (ru) * 2019-08-05 2019-11-26 Акционерное общество "Концерн "Созвездие" Малошумящий, управляемый напряжением генератор с электронным переключением поддиапазонов

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JPS6229209A (ja) * 1985-07-30 1987-02-07 Matsushita Electric Ind Co Ltd 局部発振回路
JPH03179904A (ja) * 1989-12-08 1991-08-05 Japan Radio Co Ltd 緩衝増幅装置
JP2591380B2 (ja) * 1990-08-31 1997-03-19 住友金属工業株式会社 発振器
JPH04133507A (ja) * 1990-09-25 1992-05-07 Kyocera Corp 高周波発振回路
JPH04332205A (ja) * 1991-05-08 1992-11-19 Murata Mfg Co Ltd 電圧制御発振器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030054123A (ko) * 2001-12-24 2003-07-02 삼성전기주식회사 제2고조파를 이용한 전압제어 발진회로

Also Published As

Publication number Publication date
JP2925108B2 (ja) 1999-07-28
KR960003560B1 (ko) 1996-03-15
US5440276A (en) 1995-08-08
JPH06224632A (ja) 1994-08-12

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