KR940005827A - 레이저어블레이션장치와 박막형성방법 - Google Patents
레이저어블레이션장치와 박막형성방법 Download PDFInfo
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- KR940005827A KR940005827A KR1019930009780A KR930009780A KR940005827A KR 940005827 A KR940005827 A KR 940005827A KR 1019930009780 A KR1019930009780 A KR 1019930009780A KR 930009780 A KR930009780 A KR 930009780A KR 940005827 A KR940005827 A KR 940005827A
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- Prior art keywords
- vacuum chamber
- wavelength laser
- short wavelength
- target
- film
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
- H01F41/205—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation by laser ablation, e.g. pulsed laser deposition [PLD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
본 발명은 비피적 저온에서 성막의 결정상태제어가 가능하고, 성막의 산소결함을 충분히 저감시킬 수 있고, 산화상태개선을 위한 고온어닐링이 불필요한 산화물박막형성용레이저 어블레이션장치를 제공하는 것을 목적으로하며. 그 구성에 있어서, 배기수단(5)과 산화반응성가스를 도입하는 가스도입구(6)와 수광창(7)을 구비한 진공조(1)와, 이 진공조(1)내에 설치된. 산화물의 성막재료로 이루어진 타겟 (2)을 유지하는 타겟 홀더 (2')와, 이 타겟홀더 (2')에는 대향하는 위치에서 설치되어 피박막형성체(4)를 유지하는 피박막형성체홀더(3)와, 상기 진공조(1)의 외부로부터 상기 수광창(7)을 통해서. 상기 진공조(1)내의 상기 타겟 (2)에 단파장레이저광(13)을 조사하는 단파장레이저(8)를 가진 박막형성용 레이버블레이션장치에 있어서, 상기 타겟(2)에 조사되는 단파장레이저광(13)의 1/10이하의 강도의 단파장레이저광(14)을, 상기 진공조(1)의 외부로부터 상기 수광창(7)을 통해서, 상기 진공조(1)내의 상기 피박막형성체홀더(3)가 유지하는 피박막형성체(4)위에 조사하는 단파장레이저광조사 수단(11)(12)을 가진 것을 특징으로한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 제1발명의 일실시예의 구성도, 제2도는 제1도의 동작도, 제3도는 본원 제2발명의 일실시예의 구성도. 제4도는 제3도의 동작도.
Claims (4)
- 배기수단과 산화반응성가스를 도입하는 가스도입구와 수광창을 구비한 진공조와 이 진공조내에 설치된 산화 물의 성막재료로 이루어진 타겟을 유지하는 타겟흘더와, 이 타겟홀더에 대향하는 위치에 설치되어서 피박믹형성체를 유지하는 피박막형성체홀더와. 상기 진공조의 외부로부터 상기 수광창을 통해서 상기 진공조내의 상기 타겟에 단파장레이저광을 조사하는 단파장레이저를 가진 박막형성용레이저 어블레이션장치에 있어서, 상기 타겟에 조사되는 단파장레이저광의 1/10이하의 강도의 단파장레이저광을, 상기 진공조의 외부로부터 상기 수광창을 통해서, 상기 진공조내의 상기 피박막형성체홀더가 유지하는 피박막형성체 위에 조사하는 단파장레 이저광조사수단을 가진 것을 특징으로 하는 레이저어블레이션장치.
- 배기수단과 산화반응성가스를 도입하는 가스도입구와 수광창을 구비한 진공조와, 이 진공조내에 설치된 산화물의 성막재료로 이루어지 타겟을 유지하는 타겟홀더와, 이 타겟홀더에 대향하는 위치에 설치되어 피박막형성체를 유지하는 피박막형성체홀더와, 상기 진공조의 외부로부터 상기 수광창을 통해서 상기 진공조내의 상기 타겟에 단파장레이저광을 조사하는 단파장레이저를 가진 박막형성용 레이저어블레이션장치에 있어서, 단파장레이저광을, 상기 진공조의 외부로부터 상기 수광창을 통해서, 상기 진공조내의 상기 파박막형성체홀더가 유지하는 피박막형성체의 표면근처를 피박막형성체와 대략 평행하게 통과시키는 단파장레이저광조사수단을 가진 것을 특징으로 하는 레이저어블레이션장치.
- 제1항 또는 제2항에 있어서, 단파장레이저광조사수단은, 단파장레이저로부터의 단파장레이저광을 분기하는 광학계인 것을 특징으로 하는 레이저어블레이션장치.
- 청구벙위 제1항. 제2항 또는 제3항에 기재한 레이저어블레이션장치를 사용하고, 산화물의 연자성재료를 타겟으로 해서 피박막형성체위에 박막을 형성하는 것을 특징으로 하는 박막형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4140656A JPH05331632A (ja) | 1992-06-01 | 1992-06-01 | レーザーアブレーション装置と薄膜形成方法 |
JP92-140656 | 1992-06-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940005827A true KR940005827A (ko) | 1994-03-22 |
KR960008151B1 KR960008151B1 (ko) | 1996-06-20 |
Family
ID=15273718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930009780A KR960008151B1 (ko) | 1992-06-01 | 1993-06-01 | 레이저어블레이션장치와 박막형성방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5415901A (ko) |
JP (1) | JPH05331632A (ko) |
KR (1) | KR960008151B1 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3255469B2 (ja) * | 1992-11-30 | 2002-02-12 | 三菱電機株式会社 | レーザ薄膜形成装置 |
GB2303379B (en) * | 1992-11-30 | 1997-05-28 | Mitsubishi Electric Corp | Thin film forming apparatus using laser |
FR2714205A1 (fr) * | 1993-12-17 | 1995-06-23 | Atg Sa | Matériau composite pour l'enregistrement magnéto-optique, sa préparation et son utilisation. |
US5814152A (en) * | 1995-05-23 | 1998-09-29 | Mcdonnell Douglas Corporation | Apparatus for coating a substrate |
US5612099A (en) * | 1995-05-23 | 1997-03-18 | Mcdonnell Douglas Corporation | Method and apparatus for coating a substrate |
US6113751A (en) * | 1998-08-06 | 2000-09-05 | Lockheed Martin Corporation | Electromagnetic beam assisted deposition method for depositing a material on an irradiated substrate |
US6265033B1 (en) * | 1998-09-11 | 2001-07-24 | Donald Bennett Hilliard | Method for optically coupled vapor deposition |
JP3268443B2 (ja) * | 1998-09-11 | 2002-03-25 | 科学技術振興事業団 | レーザ加熱装置 |
US20040058109A1 (en) * | 1999-03-10 | 2004-03-25 | Pierce Peter D. | Use of foamed adhesives to make paper cores or tubes |
US6492242B1 (en) * | 2000-07-03 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Method of forming of high K metallic dielectric layer |
TW589672B (en) * | 2002-12-31 | 2004-06-01 | Ind Tech Res Inst | Method of manufacturing p-type transparent conductive film and its system |
CN101389283A (zh) * | 2006-02-22 | 2009-03-18 | 定制医疗应用有限公司 | 消融工具及相关方法 |
WO2007096485A2 (en) * | 2006-02-23 | 2007-08-30 | Picodeon Ltd Oy | Coating on a metal substrate and a coated metal product |
JP4984070B2 (ja) * | 2007-10-05 | 2012-07-25 | 国立大学法人 長崎大学 | 成膜方法及び成膜装置 |
JP2013122065A (ja) * | 2011-12-09 | 2013-06-20 | Sumitomo Electric Ind Ltd | 機能性薄膜の成膜方法および成膜装置 |
US10767256B2 (en) | 2015-12-14 | 2020-09-08 | Carmine Vittoria | Method of engineering single phase magnetoelectric hexaferrite films |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5017277A (en) * | 1988-07-07 | 1991-05-21 | Matsushita Electric Industrial Co., Ltd. | Laser sputtering apparatus |
JPH02163368A (ja) * | 1988-12-15 | 1990-06-22 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
JPH0361366A (ja) * | 1989-07-28 | 1991-03-18 | Matsushita Electric Ind Co Ltd | レーザースパッタリング装置 |
JPH03188272A (ja) * | 1989-12-14 | 1991-08-16 | Matsushita Electric Ind Co Ltd | レーザ・スパッタリング装置 |
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1992
- 1992-06-01 JP JP4140656A patent/JPH05331632A/ja active Pending
-
1993
- 1993-06-01 US US08/069,520 patent/US5415901A/en not_active Expired - Fee Related
- 1993-06-01 KR KR1019930009780A patent/KR960008151B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH05331632A (ja) | 1993-12-14 |
KR960008151B1 (ko) | 1996-06-20 |
US5415901A (en) | 1995-05-16 |
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