KR940001471A - Manufacturing method of solar cell with antireflection film - Google Patents

Manufacturing method of solar cell with antireflection film Download PDF

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Publication number
KR940001471A
KR940001471A KR1019920009943A KR920009943A KR940001471A KR 940001471 A KR940001471 A KR 940001471A KR 1019920009943 A KR1019920009943 A KR 1019920009943A KR 920009943 A KR920009943 A KR 920009943A KR 940001471 A KR940001471 A KR 940001471A
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KR
South Korea
Prior art keywords
wafer
spray
gun
solar cell
inches
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KR1019920009943A
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Korean (ko)
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KR0151162B1 (en
Inventor
이규정
김인식
남효진
박철
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이헌조
주식회사 금성사
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Priority to KR1019920009943A priority Critical patent/KR0151162B1/en
Publication of KR940001471A publication Critical patent/KR940001471A/en
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Publication of KR0151162B1 publication Critical patent/KR0151162B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 태양전지의 반사방지막 형성시, 사용물질을 줄이고 열처리와 동시 스프레이 조건을 달리하면서 스프레이 코팅하므로서 제조공정의 간소화를 비롯한 효율을 향상시킨 관한것으로, 단결정 실리콘 웨이퍼를 이용한 태양전지의 반사방지 막을 형성함에 있어서, 반사 방지막 재료로서 titanium isopr n-butyl acetate을 혼합한 용액을 이용하여 예열된 웨이퍼에 걸프레이(spray)코팅시, 상기 용액의 분사압력이 40-30(putt). 상기 용액을 건(gun)가지 운반해주는 원료압력(material pressure)이 15-10[inches water], 웨이퍼가 건(gun)의 한 스트로크(stroke)때마다 전진하는 거리를 나타내는 데이블인덱스(table index)가 1.2-1.0[inches/stroke], 스프레이건이 웨이퍼를 횡단하는 속도를 나타내는 트레버스 스피드(traverse speed)를 18-15[inches/sec]로 하여 스프레이 코팅함을 특징으로 하는 반사방지막을 형성한 태양전지의 제조방법에 관한 기술이다.The present invention relates to the improvement of efficiency, including the simplification of the manufacturing process by spray coating while reducing the use material and varying the heat treatment and simultaneous spray conditions when forming the anti-reflection film of the solar cell. In forming, when spray coating the preheated wafer using a solution containing titanium isopr n-butyl acetate as an anti-reflection film material, the spray pressure of the solution is 40-30 (putt). A table index representing the distance at which the material pressure to deliver the solution to the gun is 15-10 [inches water], and the wafer advances with each stroke of the gun. Is 1.2-1.0 [inches / stroke], and a spray coating with a traverse speed of 18-15 [inches / sec] representing the speed at which the spray gun traverses the wafer. It is a technique relating to the manufacturing method of.

Description

반사방지막을 형성한 태양전지의 제조방법Manufacturing method of solar cell with antireflection film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 태양전지 제조공정도,1 is a solar cell manufacturing process of the present invention,

제7도는 전면전극 그리드 패턴도,7 is a front electrode grid pattern diagram,

제9도는 본 발명의 태양전지 구조도.9 is a structural diagram of a solar cell of the present invention.

Claims (3)

단결정 실리콘 웨이퍼를 이용한 태양전지의 반사지막을 형성함에 있어서, 반사 방지막 재료로서 titanium isopropoxide와 n-butyl acetate을 혼합한 용액을 이용하여 예열된 웨이퍼에 스프레이(spray)코팅시, 상기 용액의 분사압력이 40-30[psi], 상기 용액을 건(gun)까지 운반해주는 원료압력(material pressure)이 15-10(inches water), 웨이퍼가 건(gun)의 한 스트로크(stroke)때마다 전진하는 거리를 나타내는 데이블인덱스(table index)가 1.2-1.O[inches/stroke], 스프레이건이 웨이퍼를 횡단하는 속도를 나타내는 트레버스 스피드(traverse speedL를 18-15[inches/sec]로 하여 스프레이 코팅함을 특징으로 하는 반사방지막을 형성한 태양전지의 제조방법.In forming a reflective film of a solar cell using a single crystal silicon wafer, the spray pressure of the solution is 40 when spray coating on a preheated wafer using a solution containing titanium isopropoxide and n-butyl acetate as an antireflection film material. -30 [psi], the material pressure to deliver the solution to the gun is 15-10 (inches water), and the distance the wafer advances with each stroke of the gun Spray coating with a table index of 1.2-1.O [inches / stroke] and a traverse speed L of 18-15 [inches / sec] indicating the speed with which the spray gun traverses the wafer. Method for manufacturing a solar cell having an anti-reflection film. 제1항에 있어서, TiO2인 반사방지막 재료로서 titanium isopropoxide와 n-buthyl acetate의 혼합비를 1 : 1로 하고 웨이퍼를 400-450℃되게 가열함고 함께 스프레이함을 특징으로 하는 반사방지막을 형성한 태양전지의 제조방법.The anti-reflective coating according to claim 1, wherein the anti-reflective coating material of TiO 2 is a mixture ratio of titanium isopropoxide and n-buthyl acetate of 1: 1, and the wafer is heated to 400-450 ° C. and sprayed together. Method for producing a battery. 제1항 또는 제2항에 있어서, 스프레이건의 관통 직경이 0.011-0.0157[inch]임을 특징으로 하는 반사방지막을 형성한 태양전지의 제조방법.The method of manufacturing a solar cell with an antireflection film according to claim 1 or 2, wherein the penetration diameter of the spray gun is 0.011-0.0157 [inch]. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920009943A 1992-06-09 1992-06-09 Fabricating method for anti reflection layer of solar cell KR0151162B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920009943A KR0151162B1 (en) 1992-06-09 1992-06-09 Fabricating method for anti reflection layer of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920009943A KR0151162B1 (en) 1992-06-09 1992-06-09 Fabricating method for anti reflection layer of solar cell

Publications (2)

Publication Number Publication Date
KR940001471A true KR940001471A (en) 1994-01-11
KR0151162B1 KR0151162B1 (en) 1998-10-01

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100977330B1 (en) * 2007-03-29 2010-08-20 어플라이드 머티어리얼스, 인코포레이티드 Method for producing an anti-reflection or passivation layer for solar cells
KR100950930B1 (en) * 2009-05-22 2010-04-01 동국대학교 산학협력단 Apparatus and method for anti-reflective layer onto solar cell

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