KR930015135A - Manufacturing method of solar cell with antireflection film - Google Patents

Manufacturing method of solar cell with antireflection film Download PDF

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Publication number
KR930015135A
KR930015135A KR1019910022358A KR910022358A KR930015135A KR 930015135 A KR930015135 A KR 930015135A KR 1019910022358 A KR1019910022358 A KR 1019910022358A KR 910022358 A KR910022358 A KR 910022358A KR 930015135 A KR930015135 A KR 930015135A
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KR
South Korea
Prior art keywords
reflection film
solar cell
treated
spray gun
heat
Prior art date
Application number
KR1019910022358A
Other languages
Korean (ko)
Inventor
이규정
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019910022358A priority Critical patent/KR930015135A/en
Publication of KR930015135A publication Critical patent/KR930015135A/en

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Abstract

본발명은 지속적이고 간편한 공정으로 균일한 반사 방지막을 형성시키는데 적합한 태양전지에 관한 것으로, 단결정 실리콘 웨이퍼를 에칭하고 인확산처리하여 pn접합후 titanium isopropoxide를 이용하여 스프레이건(Spray Gun)높이를 12~16㎝, 분사압율 1822(in, H2O), titanium isopropoxide를 스프레이건까지 이송하는 압력을 8~12[psig]으로 하는 상태하에서 분사하여 반사방지막을 형성시킨 후 후면에 Al를 프린팅하여 BSF(Back Surface Field)층을 형성하고, 전,후면에 Ag를 프린팅한후 적외선로에 Co(일신화탄소)로 열처리하여 전극이 반사 방지막을 뚫고 들어가 형성되도록함을 특징으로 하는 태양전지의 제조방법에 관한 것이다.The present invention relates to a solar cell suitable for forming a uniform anti-reflection film in a continuous and easy process, and etching the single crystal silicon wafer and phosphorus diffusion treatment to increase the spray gun height by using titanium isopropoxide after pn bonding. 16cm, injection pressure ratio 1822 (in, H 2 O), and titanium isopropoxide to the spray gun under the pressure of 8 ~ 12 [psig] to form a anti-reflection film and then printed Al on the back BSF ( Forming a Back Surface Field), printing Ag on the front and back, and heat-treated with Co (monocarbon) in the infrared furnace to form an electrode penetrating through the anti-reflection film to the solar cell manufacturing method characterized in that will be.

Description

반사 방지막을 형성한 태양전지의 제조방법Manufacturing method of solar cell with antireflection film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 전면 전극 그리드 패턴도,1 is a front electrode grid pattern diagram,

제2도는 태양전지의 제조공정도.2 is a manufacturing process of the solar cell.

Claims (4)

단결정 실리콘 웨이퍼를 방향성 에칭하고 인확산처리하여 pn 접합을 형성한 후 기판을 예열한 상태에서 titanium isopropoxide를 이용하여 스프레이건(Spray Gun)높이를 12~16㎝, 분사압(atomization pressure) 18-22(in, H2O), titanium isopropoxide를 스프레이건까지 이송하는 압력을 8~12[psig]으로 하는 상태하에서 분사하여 반사방지막을 형성시킨 후 후면에 Al를 프린팅하여 BSF(Back Surface Field)층을 형성하고, 전,후면에 Ag를 프린팅한후 적외선로에 Co(일신화탄소)로 열처리하여 전극이 반사 방지막을 뚫고 들어가 형성되도록함을 특징으로 하는 태양전지의 제조방법.Directional etching of single crystal silicon wafer is performed to form a pn junction, and then the substrate is preheated, and the spray gun height is 12 to 16 cm using titanium isopropoxide, and the atomization pressure is 18-22. (in, H 2 O) and titanium isopropoxide to spray the spray gun under a pressure of 8 ~ 12 [psig] to form an anti-reflection film and then printed Al on the back to form a BSF (Back Surface Field) layer Forming, and printing Ag on the front and back, and heat-treated with Co (carbon monoxide) in the infrared furnace to form an electrode penetrating through the anti-reflection film to form a solar cell. 제1항에 있어서, 인확산 처리하여 pn 접합성형후 기판을 400℃로 예열함을 특징으로 하는 태양전지의 제조방법.The method of claim 1, wherein the substrate is preheated to 400 ° C. after pn bonding by phosphor diffusion. 제1항에 있어서, 반사방지막 형성후 Al 페이스트를 스크린 프린팅하여 적외선로에서 700~800℃, 1~2분간 열처리하여 BSF층을 형성함을 특징으로 하는 태양전지의 제조방법.The method of claim 1, wherein after the anti-reflection film is formed, the Al paste is screen printed and heat-treated in an infrared furnace at 700 to 800 ° C. for 1 to 2 minutes to form a BSF layer. 제1항에 있어서, 전,후면에 Ag페이스트를 스크린 프린팅한 후 적외선로에서 Co(일산화탄소)로 700~750℃에서 열처리하여 전극을 형성시킴을 특징으로 하는 태양전기의 제조방법.The method of claim 1, wherein after the Ag paste is screen printed on the front and rear surfaces, the electrode is heat-treated at 700 to 750 ° C. with Co (carbon monoxide) in an infrared furnace to form an electrode. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910022358A 1991-12-06 1991-12-06 Manufacturing method of solar cell with antireflection film KR930015135A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910022358A KR930015135A (en) 1991-12-06 1991-12-06 Manufacturing method of solar cell with antireflection film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910022358A KR930015135A (en) 1991-12-06 1991-12-06 Manufacturing method of solar cell with antireflection film

Publications (1)

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KR930015135A true KR930015135A (en) 1993-07-23

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Application Number Title Priority Date Filing Date
KR1019910022358A KR930015135A (en) 1991-12-06 1991-12-06 Manufacturing method of solar cell with antireflection film

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KR (1) KR930015135A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100977330B1 (en) * 2007-03-29 2010-08-20 어플라이드 머티어리얼스, 인코포레이티드 Method for producing an anti-reflection or passivation layer for solar cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100977330B1 (en) * 2007-03-29 2010-08-20 어플라이드 머티어리얼스, 인코포레이티드 Method for producing an anti-reflection or passivation layer for solar cells

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