KR100950930B1 - Apparatus and method for anti-reflective layer onto solar cell - Google Patents

Apparatus and method for anti-reflective layer onto solar cell Download PDF

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KR100950930B1
KR100950930B1 KR1020090044994A KR20090044994A KR100950930B1 KR 100950930 B1 KR100950930 B1 KR 100950930B1 KR 1020090044994 A KR1020090044994 A KR 1020090044994A KR 20090044994 A KR20090044994 A KR 20090044994A KR 100950930 B1 KR100950930 B1 KR 100950930B1
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substrate
forming material
film forming
film
coating
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KR1020090044994A
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Korean (ko)
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김삼동
오정훈
문성운
이재서
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동국대학교 산학협력단
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Priority to PCT/KR2009/006179 priority patent/WO2010134673A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: An apparatus and a method for manufacturing an anti-reflective solar cell are provided to form a film with a uniform thickness by hardening a film forming material and coating the material on a substrate. CONSTITUTION: A film forming material is coated on the surface of a silicon substrate of a solar cell(S11). The film forming material, coated on the surface of the substrate, is hardened to a preset thickness range by transmitting heat from the lower side of the substrate(S12). The part which is not hardened in the film forming material is removed(S13).

Description

태양전지 셀의 반사방지막 제조 장치 및 방법{Apparatus and Method for Anti-Reflective Layer onto Solar Cell}Apparatus and Method for Anti-Reflective Layer onto Solar Cell}

본 발명은 태양전지 셀의 제조 공정 중 기판에 반사방지막을 형성하는 장치 및 방법에 관한 것으로, 더욱 상세하게는 스핀코팅(spin coating) 등의 다양한 코팅 방식을 이용하여 태양전지 셀의 기판 면에 반사방지막을 원하는 일정한 두께로 형성할 수 있는 태양전지 셀의 반사방지막 제조 장치 및 방법에 관한 것이다. The present invention relates to an apparatus and method for forming an anti-reflection film on a substrate during the manufacturing process of the solar cell, and more particularly, reflecting to the substrate surface of the solar cell using a variety of coating methods such as spin coating The present invention relates to an antireflection film production apparatus and method for a solar cell that can form a barrier film at a desired thickness.

태양전지 셀(Solar Cell)은 태양에너지를 전기에너지로 변환시켜주는 역할을 하는 것으로, 반도체 재료인 실리콘, 갈륨비소, 카드뮴 텔루르, 황화카드뮴, 인듐인(燐) 또는 이들을 복합한 재료들이 사용되며, 통상적으로는 주로 실리콘이 이용된다.Solar cells convert solar energy into electrical energy, and semiconductor materials such as silicon, gallium arsenide, cadmium tellurium, cadmium sulfide, indium phosphide, or a combination thereof are used. Usually, mainly silicon is used.

태양전지 셀은 태양 에너지를 전기에너지로 바꿔주는 반도체 소자이므로 빛을 효과적으로 수집해야 한다. 이를 위해 태양전지 셀의 외면에 빛의 반사율을 감소시키고자 텍스쳐(texture)를 형성하는 기술과 반사방지막(AR: Anti-Reflection)을 형성하는 기술이 사용되고 있다. 대부분의 태양전지 셀에 있어서 이 두 기술이 동시에 적용되고 있다. Solar cell is a semiconductor device that converts solar energy into electrical energy, so it must collect light effectively. To this end, technologies for forming a texture and anti-reflection (AR) have been used to reduce the reflectance of light on the outer surface of a solar cell. For most solar cells, these two technologies are being applied simultaneously.

상기 반사방지막은 실리콘 기판 상에 SiO2 나 TiO2, MgF2, ZnS 등을 화학기상증착법(CVD : Chemical Vapour Deposition) 또는 플라즈마 화학기상증착법을 이용하여 증착함으로써 형성된다. The anti-reflection film is formed by depositing SiO 2, TiO 2, MgF 2, ZnS, or the like on a silicon substrate using chemical vapor deposition (CVD) or plasma chemical vapor deposition.

그러나, 이러한 화학기상증착을 이용하여 태양전지 셀의 기판에 반사방지막을 형성하는 방법은 매우 높은 진공 처리 단계를 필요로 하므로 높은 비용을 초래하며, 공정이 복잡한 문제가 있다.However, the method of forming the anti-reflection film on the substrate of the solar cell using such chemical vapor deposition requires a very high vacuum treatment step, resulting in high cost and a complicated process.

또한, 전술한 것처럼 종래의 화학기상증착법을 이용한 반사방지막 형성 기술들은 비용이 많이 들기 때문에 반사방지막을 다층(multi-layer)으로 형성할 경우 제조 원가가 급격히 상승하기 때문에 현질적으로 적용하기가 어려운 문제도 있다. In addition, as described above, the conventional anti-reflection film formation techniques using chemical vapor deposition are expensive, and thus, when the anti-reflection film is formed in a multi-layer, manufacturing costs increase rapidly, making it difficult to apply practically. There is also.

본 발명은 상기와 같은 문제들을 해결하기 위한 것으로, 본 발명의 목적은 제조 공정이 간단하며, 제조 비용이 저렴하고, 반사방지막의 두께를 균일하고 정확하게 형성하여 저비용 고효율의 태양전지 셀을 구현할 수 있는 태양전지 셀의 반사방지막 제조 장치 및 방법을 제공함에 있다.The present invention is to solve the above problems, an object of the present invention is to simplify the manufacturing process, low manufacturing cost, uniformly and accurately forming the thickness of the anti-reflection film can implement a low cost high efficiency solar cell The present invention provides an apparatus and method for manufacturing an anti-reflection film of a solar cell.

본 발명의 다른 목적은 다층의 반사방지막을 용이하게 형성할 수 있는 태양전지 셀의 반사방지막 제조 장치 및 방법을 제공하는 것이다. Another object of the present invention is to provide an apparatus and method for manufacturing an anti-reflection film of a solar cell that can easily form a multilayer anti-reflection film.

이를 위한 본 발명의 첫번째 범주에 따르면, 태양전지 셀의 기판의 면에 막형성물질을 코팅하는 코팅유닛과; 상기 기판의 하측에서 기판에 열을 전달하여 기판 면에 코팅된 막형성물질을 경화시키는 히팅유닛과; 상기 기판에 유기용매를 공급하여 기판의 막형성물질 중 경화되지 않은 부분을 제거하는 세정유닛을 포함하여 구성된 태양전지 셀의 반사방지막 제조 장치가 제공된다.According to the first category of the present invention for this purpose, the coating unit for coating a film forming material on the surface of the substrate of the solar cell; A heating unit transferring heat from the lower side of the substrate to the substrate to cure the film forming material coated on the substrate surface; Provided is an apparatus for manufacturing an antireflection film for a solar cell including a cleaning unit for supplying an organic solvent to the substrate to remove an uncured portion of the film forming material of the substrate.

본 발명의 두번째 범주에 따르면, 태양전지 셀의 기판의 면에 막형성물질을 코팅하는 코팅단계와; 상기 기판의 하측에서부터 기판에 열을 전달하여 기판 면에 코팅된 막형성물질을 설정된 두께 범위로 경화시키는 경화단계와; 상기 기판의 막형성물질 중 경화되지 않은 부분을 제거하는 세정단계를 포함하여 구성된 태양전지 셀의 반사방지막 제조 방법이 제공된다.According to a second category of the present invention, a coating step of coating a film forming material on the surface of the substrate of the solar cell; A curing step of transferring heat from the lower side of the substrate to the substrate to cure the film forming material coated on the substrate surface in a predetermined thickness range; A method of manufacturing an anti-reflection film for a solar cell including a cleaning step of removing an uncured portion of a film forming material of the substrate is provided.

본 발명의 두번째 범주의 다른 한 형태에 따르면, 태양전지 셀의 기판을 설 정 온도로 가열하는 예열단계와; 상기 예열된 기판의 면에 막형성물질을 코팅하는 코팅단계와; 상기 기판의 막형성물질 중 경화되지 않은 부분을 제거하는 세정단계를 포함하여 구성된 태양전지 셀의 반사방지막 제조 방법이 제공된다. According to another aspect of the second category of the present invention, a preheating step of heating the substrate of the solar cell to a set temperature; A coating step of coating a film forming material on the surface of the preheated substrate; A method of manufacturing an anti-reflection film for a solar cell including a cleaning step of removing an uncured portion of a film forming material of the substrate is provided.

이러한 본 발명에 따르면, 기판의 상면에 다양한 방식으로 막형성물질(예컨대 실리카 전구물질)을 코팅한 다음, 기판의 하측에서부터 기판의 상면에 코팅된 막형성물질에 열을 전달하여 막형성물질을 일정한 두께로 경화시키고, 경화되지 않을 막형성물질을 제거하여 반사방지막을 형성할 수 있다. 따라서, 기존의 화학기상증착법에 의해 반사방지막을 형성하는 기술에 비하여 반사방지막 형성 공정이 대폭 단순화되며, 저렴한 비용으로 태양전지 셀을 제조할 수 있다. According to the present invention, the film forming material (for example, silica precursor) is coated on the upper surface of the substrate in various ways, and then the heat is transferred from the lower side of the substrate to the film forming material coated on the upper surface of the substrate to uniform the film forming material. The antireflection film may be formed by curing to a thickness and removing a film forming material that will not be cured. Therefore, the anti-reflection film forming process is greatly simplified as compared with the conventional technique for forming the anti-reflection film by chemical vapor deposition, and the solar cell can be manufactured at low cost.

또한, 기판에 도포된 막형성물질을 하측에서부터 일정 두께로 경화시키므로 막두께를 균일하고 일정하게 형성할 수 있으며, 막두께가 코팅 방식에 영향을 받지 않고 기판에 가해지는 열의 온도와 시간에 따라 결정되므로 막두께의 조정이 용이한 이점이 있다. In addition, since the film-forming material applied to the substrate is cured to a certain thickness from below, the film thickness can be formed uniformly and uniformly, and the film thickness is determined according to the temperature and time of heat applied to the substrate without being affected by the coating method. Therefore, there is an advantage that the film thickness can be easily adjusted.

특히, 기판의 표면에 텍스쳐가 형성되어 있을 경우 반사방지막이 텍스쳐의 면을 따라 균일한 두께로 형성될 수 있는 이점이 있다. In particular, when the texture is formed on the surface of the substrate there is an advantage that the anti-reflection film can be formed with a uniform thickness along the surface of the texture.

이와 더불어, 본 발명에 따르면 저비용으로 반사방지막을 형성할 수 있으므로 제조 원가를 크게 상승시키지 않고 전(全)방향성(omnidirectional)의 다층 반사방지막(multi-layer anti-reflection film)을 균일하고 용이하게 형성할 수 있는 이점이 있다.In addition, according to the present invention, since the anti-reflection film can be formed at low cost, an omnidirectional multi-layer anti-reflection film can be formed uniformly and easily without significantly increasing the manufacturing cost. There is an advantage to this.

이하, 첨부된 도면을 참조하여 본 발명에 따른 태양전지 셀의 반사방지막 제조 장치 및 방법의 바람직한 실시예를 설명한다. Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the anti-reflection film production apparatus and method of a solar cell according to the present invention.

먼저, 도 1을 참조하면, 본 발명의 일 실시예에 따른 반사방지막 제조 방법은 태양전지 셀의 실리콘 기판의 면에 막형성물질을 코팅하는 코팅단계(S11)와, 상기 기판의 하측에서부터 기판에 열을 전달하여 기판 면에 코팅된 막형성물질을 설정된 두께 범위로 경화시키는 경화단계(S12), 상기 기판의 막형성물질 중 경화되지 않은 부분을 제거하는 세정단계(S13)로 구성된다. First, referring to Figure 1, the anti-reflection film manufacturing method according to an embodiment of the present invention is a coating step (S11) for coating a film forming material on the surface of the silicon substrate of the solar cell, and from the bottom of the substrate to the substrate It comprises a curing step (S12) for curing the film-forming material coated on the surface of the substrate to a predetermined thickness range by transferring heat, and a cleaning step (S13) for removing the uncured portion of the film-forming material of the substrate.

도 2 내지 도 4를 참조하여 각 단계에 대해 좀 더 상세히 설명하면 다음과 같다. 2 to 4, each step will be described in more detail as follows.

도 2에 도시된 것과 같이, 반사율을 저감시키기 위한 텍스쳐(texture)(1a)가 형성되어 있는 태양전지 셀의 실리콘 기판(1)의 상부면에 막형성물질(2)을 소정의 두께로 코팅한다. 이 실시예에서는 상기 실리콘 기판(1)의 면에 텍스쳐(1a)가 형성된 것을 예시하였지만, 단순히 편평면으로 된 것을 사용해도 무방하다. As shown in FIG. 2, the film forming material 2 is coated on the upper surface of the silicon substrate 1 of the solar cell in which the texture 1a for reducing the reflectance is formed. . In this embodiment, the texture 1a is formed on the surface of the silicon substrate 1, but a flat surface may be used.

상기 실리콘 기판(1)에 막형성물질(2)을 코팅하는 방식으로는 스핀코팅(spin coating) 방식, 스프레이코팅(spray coating) 방식, 딥코팅(dip coating) 방식, 롤코팅(Roll coating) 방식 등 공지의 코팅 방식이 이용될 수 있다. The coating method of coating the film forming material 2 on the silicon substrate 1 may include a spin coating method, a spray coating method, a dip coating method, a roll coating method. Known coating methods can be used.

상기 실리콘 기판(1)에 코팅되는 막형성물질(2)은 모든 실리카(Sillica) 전구물질(precursor) 등의 유전체 물질이 될 수 있다. 상기 실리카 전구물질의 종류로는 유기중합체(Organic Polymer)로서 Polyimide(PI), Polyquinolines, Polybenzocyclobutenes, Benzocyclobutenes, Polyarylene 등이 있으며, 무기중합체(Inorganic Polymer)로서 Silisesquioxanes, Siloxanes, Copolymers(MSQ 또는 HSQ 계열) 등이 있다. The film forming material 2 coated on the silicon substrate 1 may be a dielectric material such as all silica precursors. Examples of the silica precursors include polyimide (PI), polyquinolines, polybenzocyclobutenes, benzocyclobutenes, and polyarylene as organic polymers. There is this.

이외에도 상기 막형성물질(2)로서 실리카 전구물질, SiC, SiON, SiCN, Si3N4, Zr산화물, MgO, ITO(Indium-tin-oxide), ZnO, 다이아몬드상 카본(Diamond-like-carbon), 비정질 카본 중 적어도 어느 하나를 포함하는 유전체 물질을 사용할 수 있다. In addition, as the film forming material (2), silica precursor, SiC, SiON, SiCN, Si 3 N 4 , Zr oxide, MgO, ITO (Indium-tin-oxide), ZnO, diamond-like-carbon It is possible to use a dielectric material containing at least one of amorphous carbon.

상기와 같이 실리콘 기판(1)에 막형성물질(2)을 코팅한 다음 실리콘 기판(1)을 경화 공정 위치로 반송하고, 경화 공정 위치에서 도 3에 도시된 것과 같이 실리콘 기판(1)의 바닥면에 열을 가하여 실리콘 기판(1)에 열을 전달한다. 상기 실리콘 기판(1)의 하부에서부터 열이 전달되어 실리콘 기판(1)이 가열되면, 상기 실리콘 기판(1)의 열이 상기 막형성물질(2)로 전달되어 실리콘 기판(1) 면과 접촉되어 있는 막형성물질(2)의 하부에서부터 서서히 경화가 이루어진다. The film forming material 2 is coated on the silicon substrate 1 as described above, and then the silicon substrate 1 is returned to the curing process position, and the bottom of the silicon substrate 1 is shown in FIG. 3 at the curing process position. Heat is applied to the surface to transfer heat to the silicon substrate 1. When heat is transferred from the lower portion of the silicon substrate 1 to heat the silicon substrate 1, the heat of the silicon substrate 1 is transferred to the film forming material 2 to be in contact with the surface of the silicon substrate 1. Curing takes place gradually from the bottom of the film forming material 2.

상기 실리콘 기판(1)의 바닥면에 열을 가하는 방법으로는 실리콘 기판(1)을 고온의 히팅플레이트(10)에 안착시키는 방법을 이용할 수 있다. As a method of applying heat to the bottom surface of the silicon substrate 1, a method of mounting the silicon substrate 1 on the high temperature heating plate 10 may be used.

일정 시간이 경과하여 막형성물질(2)의 경화 부분이 설정 두께범위로 되면, 도 4에 도시된 것과 같이 실리콘 기판(1)을 세정 공정 위치로 반송하여 실리콘 기판(1) 상에 아세톤 등의 유기용매 또는 물을 공급하여 경화되지 않은 막형성물질(2a)을 제거한다. When a certain time has elapsed and the cured portion of the film forming material 2 is within the set thickness range, as shown in FIG. 4, the silicon substrate 1 is conveyed to the cleaning process position, such as acetone or the like on the silicon substrate 1. An organic solvent or water is supplied to remove the uncured film forming material 2a.

이 세정 공정에 의해 경화되지 않은 막형성물질(2a)이 제거되면, 실리콘 기판(1) 상에는 경화된 일정 두께의 막형성물질(2b)만 남게 되고, 이 막형성물질(2b)이 반사방지막(Anti-Reflective Film)을 이루게 된다. 이 실시예에서 상기 반사방지막(2b)은 실리콘 기판(1)의 텍스쳐(1a) 면을 따라 균일한 두께로 형성된다. When the uncured film forming material 2a is removed by this cleaning process, only the cured film forming material 2b having a predetermined thickness remains on the silicon substrate 1, and the film forming material 2b is formed as an antireflection film ( Anti-Reflective Film). In this embodiment, the anti-reflection film 2b is formed with a uniform thickness along the surface of the texture 1a of the silicon substrate 1.

실리콘 기판(1)에 반사방지막(2b)을 다층으로 형성하고자 할 경우에는 전술한 과정을 반복적으로 연속 수행하면 된다. 이 때, 각 코팅 공정에서 사용하는 막형성물질(2)을 다른 굴절률을 갖는 물질을 사용하여 전(全)방향성(omnidirectional)의 다층 반사방지막(multi-layer anti-reflection film)을 형성할 수 있다. When the anti-reflection film 2b is formed in multiple layers on the silicon substrate 1, the above-described process may be repeatedly and continuously performed. In this case, an omnidirectional multi-layer anti-reflection film may be formed using a film having a different refractive index from the film forming material 2 used in each coating process. .

한편, 전술한 실시예에서는 코팅 공정 후 실리콘 기판(1)에 열을 가하여 경화 공정을 수행하였으나, 이와 다르게 코팅 공정 이전에 실리콘 기판(1)을 일정 온도로 예열하는 예열 공정을 수행하여 경화 공정의 시간을 단축시킬 수도 있을 것이다. Meanwhile, in the above-described embodiment, the curing process is performed by applying heat to the silicon substrate 1 after the coating process. Alternatively, the preheating process of preheating the silicon substrate 1 to a predetermined temperature is performed before the coating process. It may save you time.

또한, 이와 다르게 도 5에 도시한 반사방지막 제조 방법의 다른 실시예와 같이, 코팅 공정 이전에 실리콘 기판(1)을 일정 온도로 가열하는 예열 공정을 수행하고(단계 S21), 일정 온도로 예열된 실리콘 기판(1) 상에 막형성 물질(2)을 코팅한 다음(단계 S22) 일정 시간 경과 후, 별도의 경화 공정없이 바로 세정 공정에서 경화되지 않은 막형성물질(2)을 제거하는 공정(단계 S23)으로 반사방지막을 형성할 수 있다. 이 두번째 실시예의 반사방지막 제조 방법에서는 예열된 실리콘 기판(1)에 막형성물질(2)을 코팅하고 설정 시간동안 경과시키면 막형성물질(2)이 실리콘 기판(1)의 열에 의해 서서히 경화되어 반사방지막을 형성하게 된다. Alternatively, as in another embodiment of the anti-reflection film manufacturing method shown in FIG. 5, a preheating process of heating the silicon substrate 1 to a predetermined temperature is performed prior to the coating process (step S21), and preheated to a predetermined temperature. Coating the film-forming material 2 on the silicon substrate 1 (step S22) and then removing the uncured film-forming material 2 from the cleaning process immediately after a certain period of time without a separate curing step (step S23) to form an antireflection film. In the anti-reflection film manufacturing method of this second embodiment, when the film-forming material 2 is coated on the preheated silicon substrate 1 and elapsed for a predetermined time, the film-forming material 2 is gradually cured by heat of the silicon substrate 1 to reflect the film-forming material 2. The prevention film is formed.

물론, 이 두번째 실시예에 따른 반사방지막 제조 방법을 이용하여 다층 반사방지막을 형성하고자 할 경우 상기 예열 공정(S21), 코팅 공정(S22), 세정 공정(S23)을 순차적으로 반복 수행하면 된다. Of course, when the multilayer anti-reflection film is to be formed using the anti-reflection film manufacturing method according to the second embodiment, the preheating step S21, the coating step S22, and the cleaning step S23 may be sequentially performed.

한편, 아래의 표 1은 전술한 본 발명의 반사방지막 제조 방법의 실험예로서, 초기에 300rpm으로 10초 동안 회전시키다가 이후에 950rpm으로 40초 동안 회전시키면서 실리콘 기판(1)에 막형성물질을 스핀코팅한 다음, 경화 공정에서 가열 조건을 달리하여 막형성물질을 경화시키고, 아세톤을 이용하여 세정 공정을 수행하여 반사방지막을 제조하였다. 참고로, 아래의 표 1에서 가열 온도는 실리콘 기판(1)이 안착되는 히팅플레이트(10)(도 3참조)의 온도이다. On the other hand, Table 1 below is an experimental example of the anti-reflection film manufacturing method of the present invention described above, the film-forming material on the silicon substrate (1) while initially rotating for 10 seconds at 300rpm and then for 40 seconds at 950rpm After the spin coating, the film forming material was cured by varying the heating conditions in the curing process, and the antireflection film was prepared by performing the cleaning process using acetone. For reference, in Table 1 below, the heating temperature is the temperature of the heating plate 10 (see FIG. 3) on which the silicon substrate 1 is seated.

가열 온도Heating temperature 가열 시간Heating time 세정 후 반사방지막 두께Anti-reflective film thickness after cleaning 110℃  110 ℃ 30초30 seconds 31Å31Å 90초90 sec 37Å37Å 180초180 seconds 1521Å1521 yen 150℃ 150 ℃ 30초30 seconds 4665Å4665 yen 180초180 seconds 6834Å6834 yen

상기 표 1에서 볼 수 있는 바와 같이, 실리콘 기판(1)에 형성되는 반사방지막(2b)의 두께는 경화 공정에서의 가열 온도와 가열 시간에 따라 달라짐을 알 수 있다. 따라서, 경화 공정에서 가열 온도와 가열 시간을 적절하게 조절하면 원하는 두께의 반사방지막을 정밀하게 형성할 수 있다. As can be seen in Table 1, it can be seen that the thickness of the anti-reflection film 2b formed on the silicon substrate 1 depends on the heating temperature and the heating time in the curing process. Therefore, by appropriately adjusting the heating temperature and the heating time in the curing step, it is possible to precisely form the antireflection film having a desired thickness.

도 6은 전술한 본 발명의 반사방지막 제조 방법을 수행하기 위한 반사방지막 제조 장치의 구성의 일 실시예를 나타낸 것으로, 이 실시예에 따른 반사방지막 제조 장치는, 워크테이블(111) 상에 안착된 실리콘 기판(1)에 막형성물질(2)을 분사하여 코팅하는 코팅스프레이(112)를 구비한 코팅유닛(110)과, 상기 코팅유닛(110)에서 반송된 실리콘 기판(1)이 안착되어 가열되는 히팅플레이트(121)를 구비한 히팅유닛(120)과, 상기 히팅유닛(120)에서 반송된 실리콘 기판(1)이 놓여지는 워크테이블(131)과 상기 워크테이블(131) 상의 실리콘 기판(1)에 아세톤과 같은 세정액을 분사하는 세정액스프레이(132)를 구비한 세정유닛(130)을 포함하여 구성될 수 있다. 6 shows an embodiment of the configuration of the anti-reflection film production apparatus for performing the above-described anti-reflection film production method of the present invention, the anti-reflection film manufacturing apparatus according to this embodiment, is mounted on the work table 111 The coating unit 110 having the coating spray 112 for spraying and coating the film forming material 2 on the silicon substrate 1 and the silicon substrate 1 conveyed from the coating unit 110 are seated and heated. The heating unit 120 having the heating plate 121, the work table 131 on which the silicon substrate 1 conveyed from the heating unit 120 is placed, and the silicon substrate 1 on the work table 131. ) May include a cleaning unit 130 having a cleaning liquid spray 132 for spraying a cleaning liquid such as acetone.

이와 같이 구성된 반사방지막 제조 장치는 다음과 같이 작동한다. The antireflection film production apparatus configured as described above operates as follows.

상기 코팅유닛(110)의 워크테이블(111) 상에 실리콘 기판(1)이 안착되면, 코팅스프레이(112)를 통해 막형성물질(2)(예컨대 실리카 전구물질)이 분사되면서 실리콘 기판(1) 면에 코팅된다. When the silicon substrate 1 is seated on the work table 111 of the coating unit 110, the film forming material 2 (eg, a silica precursor) is sprayed through the coating spray 112, and thus the silicon substrate 1 is disposed. Coated on cotton.

이어서, 실리콘 기판(1)은 도면에 도시되지 않은 반송로봇에 의해 히팅유닛(120)으로 반송되어 히팅플레이트(121) 상에 안착된다. 이 때, 히팅플레이트(121)의 열이 실리콘 기판(1)에 전달되고, 실리콘 기판(1)이 가열되면서 실리콘 기판(1) 면에 코팅된 막형성물질(2)이 경화된다. Subsequently, the silicon substrate 1 is conveyed to the heating unit 120 by a transport robot (not shown) and seated on the heating plate 121. At this time, heat of the heating plate 121 is transferred to the silicon substrate 1, and the film forming material 2 coated on the surface of the silicon substrate 1 is cured while the silicon substrate 1 is heated.

일정 시간 경과하여 경화가 완료되면, 실리콘 기판(1)은 역시 도면에 도시되지 않은 반송로봇에 의해 세정유닛(130)의 워크테이블(131) 상으로 반송하여 안착시킨다. 이어서, 세정액스프레이(132)를 통해 아세톤과 같은 세정액이 분사되어 실리콘 기판(1) 상의 경화되지 않은 막형성물질(2)을 제거한다. 이로써 실리콘 기판(1) 상에 하나의 반사방지막(2b)이 일정 두께로 형성된다. When the curing is completed after a certain time, the silicon substrate 1 is transported onto the work table 131 of the cleaning unit 130 by a transport robot (not shown in the drawing) and seated. Subsequently, a cleaning liquid such as acetone is sprayed through the cleaning liquid spray 132 to remove the uncured film forming material 2 on the silicon substrate 1. As a result, one anti-reflection film 2b is formed on the silicon substrate 1 to have a predetermined thickness.

실리콘 기판(1)에 반사방지막(2b)을 다층으로 형성하고자 할 경우에는 상기 코팅유닛(110), 히팅유닛(120), 세정유닛(130)을 순차적으로 복수개 연속하여 구성함으로써 실리콘 기판(1)에 반사방지막(2b)을 순차적으로 형성하면 된다. When the antireflection film 2b is to be formed in multiple layers on the silicon substrate 1, the coating unit 110, the heating unit 120, and the cleaning unit 130 are sequentially formed in plural numbers in succession. The antireflection film 2b may be formed sequentially.

본 발명의 반사방지막 제조 장치의 구성은 전술한 실시예에 국한되지 않고, 다양하게 구성될 수 있다. 예를 들어, 코팅유닛(110)과 세정유닛(130)을 인라인 상으로 배치하고 코팅유닛(110)과 세정유닛(130) 사이에 히터가 내장된 열전도성 재질의 컨베이어를 구성하여 코팅유닛(110)에서 세정유닛(130)으로 실리콘 기판을 반송하는 동안 막형성물질의 경화가 이루어지도록 구성할 수도 있을 것이다. The configuration of the anti-reflection film production apparatus of the present invention is not limited to the above-described embodiment, it can be configured in various ways. For example, the coating unit 110 and the cleaning unit 130 are arranged in-line, and the coating unit 110 is configured by configuring a conveyor of a thermally conductive material having a heater therebetween between the coating unit 110 and the cleaning unit 130. It may be configured to cure the film-forming material during the transfer of the silicon substrate to the cleaning unit 130 in the).

또한, 코팅유닛으로서 스프레이코팅을 수행하지 않고 스핀코팅이나 기타 다른 코팅 방식을 수행할 수 있는 코팅유닛을 구성할 수도 있을 것이다. In addition, the coating unit may be configured as a coating unit that can perform spin coating or other coating methods without performing a spray coating.

도 1은 본 발명에 따른 반사방지막 제조 방법의 첫번째 실시예를 설명하는 순서도1 is a flow chart illustrating a first embodiment of an antireflection film manufacturing method according to the present invention.

도 2 내지 도 4는 도 1의 반사방지막 제조 방법의 각 단계별로 이루어지는 공정을 도식화하여 나타낸 요부 단면도2 to 4 is a sectional view showing the principal parts of the process performed in each step of the anti-reflection film production method of FIG.

도 5는 본 발명에 따른 반사방지막 제조 방법의 두번째 실시예를 설명하는 순서도Figure 5 is a flow chart illustrating a second embodiment of the anti-reflection film production method according to the present invention

도 6은 본 발명에 따른 반사방지막 제조 장치의 구성의 일 실시예를 개략적으로 나타낸 구성도 Figure 6 is a schematic view showing an embodiment of the configuration of the anti-reflection film production apparatus according to the present invention

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 실리콘 기판 2 : 막형성물질1 silicon substrate 2 film forming material

2a : 경화되지 않은 막형성물질 2b : 경화된 막형성물질(반사방지막)2a: uncured film forming material 2b: cured film forming material (antireflection film)

10 : 히팅플레이트 110 : 코팅유닛10: heating plate 110: coating unit

112 : 코팅스프레이 120 : 히팅유닛112: coating spray 120: heating unit

121 : 히팅플레이트 130 : 세정유닛121: heating plate 130: cleaning unit

132 : 세정액스프레이132: cleaning liquid spray

Claims (9)

태양전지 셀의 기판의 면에 막형성물질을 형성하고자 하는 최종 두께보다 두꺼운 일정 두께로 코팅하는 코팅유닛과;A coating unit coating a predetermined thickness thicker than a final thickness to form a film forming material on the surface of the substrate of the solar cell; 상기 기판의 하측에서 기판에 열을 전달하여 기판 면에 일정 두께로 코팅된 막형성물질을 하측에서부터 경화시키는 히팅유닛과;A heating unit for transferring heat from the lower side of the substrate to the substrate to cure the film forming material coated on the surface of the substrate to a predetermined thickness from below; 상기 기판에 유기용매를 공급하여 기판의 막형성물질 중 경화되지 않은 부분을 제거하는 세정유닛을 포함하여 구성된 태양전지 셀의 반사방지막 제조 장치.Apparatus for manufacturing an anti-reflection film for a solar cell comprising a cleaning unit for supplying an organic solvent to the substrate to remove the uncured portion of the film forming material of the substrate. 제1항에 있어서, 상기 기판에 막형성물질을 도포하기 전에 기판을 일정 온도로 가열하는 예열유닛을 더 포함하여 구성된 것을 특징으로 하는 태양전지 셀의 반사방지막 제조 장치.The apparatus of claim 1, further comprising a preheating unit that heats the substrate to a predetermined temperature before applying the film forming material to the substrate. 태양전지 셀의 기판의 면에 막형성물질을 형성하고자 하는 최종 두께보다 두꺼운 일정 두께로 코팅하는 코팅단계와;A coating step of coating a thickness of a predetermined thickness thicker than a final thickness to form a film forming material on the surface of the substrate of the solar cell; 상기 기판의 하측에서부터 기판을 가열하여 기판 면에 코팅된 막형성물질에 열을 전달함으로써 막형성물질을 하측에서부터 설정된 두께 범위로 경화시키는 경화단계와;A curing step of heating the substrate from the lower side of the substrate to transfer heat to the film forming material coated on the surface of the substrate to cure the film forming material in a predetermined thickness range from the lower side; 상기 기판의 막형성물질 중 경화되지 않은 부분을 제거하는 세정단계를 포함하여 구성된 태양전지 셀의 반사방지막 제조 방법.Method for manufacturing an anti-reflection film of a solar cell comprising a cleaning step of removing the uncured portion of the film forming material of the substrate. 제3항에 있어서, 상기 코팅단계 이전에 기판을 설정 온도로 가열하는 예열단계를 더 포함하여 구성된 것을 특징으로 하는 태양전지 셀의 반사방지막 제조 방 법.The method of claim 3, further comprising a preheating step of heating the substrate to a predetermined temperature before the coating step. 제3항에 있어서, 상기 코팅단계, 경화단계, 세정단계를 반복적으로 연속 수행하여 기판 면에 반사방지막을 다층으로 형성하는 것을 특징으로 하는 태양전지 셀의 반사방지막 제조 방법.The method of claim 3, wherein the coating step, the curing step, and the cleaning step are repeatedly performed to form an antireflection film on a substrate surface in multiple layers. 삭제delete 삭제delete 제3항에 있어서, 상기 코팅단계에서 코팅되는 막형성물질은 실리카(Sillica) 전구물질(precursor) 또는 SiC, SiON, SiCN, Si3N4, Zr산화물, MgO, ITO(Indium-tin-oxide), ZnO, 다이아몬드상 카본(Diamond-like-carbon), 비정질 카본 중 적어도 어느 하나를 포함하는 유전체 물질인 것을 특징으로 하는 태양전지 셀의 반사방지막 제조 방법.The method of claim 3, wherein the film forming material coated in the coating step is a silica (Sillica) precursor (precursor) or SiC, SiON, SiCN, Si 3 N 4 , Zr oxide, MgO, ITO (Indium-tin-oxide) Method for producing an anti-reflection film of a solar cell, characterized in that the dielectric material comprising at least one of, ZnO, diamond-like carbon, amorphous carbon. 제3항에 있어서, 상기 세정단계에서는 상기 기판의 막형성물질에 유기용매를 공급하여 경화되지 않은 막형성물질을 제거하는 것을 특징으로 하는 태양전지 셀의 반사방지막 제조 방법.The method of claim 3, wherein in the cleaning step, an organic solvent is supplied to the film forming material of the substrate to remove the uncured film forming material.
KR1020090044994A 2009-05-22 2009-05-22 Apparatus and method for anti-reflective layer onto solar cell KR100950930B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0151162B1 (en) * 1992-06-09 1998-10-01 구자홍 Fabricating method for anti reflection layer of solar cell
JPH10318797A (en) 1997-05-16 1998-12-04 Denso Corp Production of antireflection plate
JP2002543586A (en) 1999-04-26 2002-12-17 マイクロン テクノロジー，インコーポレイティド Anti-reflective coatings and related methods
JP2006148155A (en) 1994-07-21 2006-06-08 Sharp Corp Manufacturing method of solar cell and the solar cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0151162B1 (en) * 1992-06-09 1998-10-01 구자홍 Fabricating method for anti reflection layer of solar cell
JP2006148155A (en) 1994-07-21 2006-06-08 Sharp Corp Manufacturing method of solar cell and the solar cell
JPH10318797A (en) 1997-05-16 1998-12-04 Denso Corp Production of antireflection plate
JP2002543586A (en) 1999-04-26 2002-12-17 マイクロン テクノロジー，インコーポレイティド Anti-reflective coatings and related methods

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