KR101279930B1 - Manufacturing Mothod of Curved Surface F-dopped Tin oxide film with Nonlinear In-line Lifting - Google Patents

Manufacturing Mothod of Curved Surface F-dopped Tin oxide film with Nonlinear In-line Lifting Download PDF

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KR101279930B1
KR101279930B1 KR1020110068783A KR20110068783A KR101279930B1 KR 101279930 B1 KR101279930 B1 KR 101279930B1 KR 1020110068783 A KR1020110068783 A KR 1020110068783A KR 20110068783 A KR20110068783 A KR 20110068783A KR 101279930 B1 KR101279930 B1 KR 101279930B1
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철 규 송
성 환 박
보 민 김
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Abstract

본 발명은 곡면과 같은 복잡한 형상의 투명 기판위에 FTO 투명전도막을 형성하는 코팅 시스템에 관한 것으로서, 특히, 기판이 공급되어 배출되는 과정까지 비선형 연속이송 장치를 구비하고, 상기 곡면 기판과 동일한 90도 방향에 원료급기 및 배기 노즐을 설치하고, 곡면 기판의 이송방향에 대하여 90도 방향에서 원료가 공급되고, 이에 따라 곡면의 기판에 균일하게 원료가스가 공급되어 균질한 박막을 코팅하는 단계로 구성되는 비선형 연속 이송장치를 겸비한 곡면 FTO 투명전도막 코팅을 수행하는 것을 특징으로 한다. The present invention relates to a coating system for forming an FTO transparent conductive film on a transparent substrate having a complex shape such as a curved surface. In particular, the present invention provides a non-linear continuous transfer device up to a process of supplying and discharging a substrate, and the same 90 degree direction as that of the curved substrate. A non-linear structure in which raw material supply and exhaust nozzles are installed in the chamber, and raw materials are supplied in a direction of 90 degrees to the transfer direction of the curved substrate, and thus raw material gas is uniformly supplied to the curved substrate to coat a homogeneous thin film. It is characterized by performing a curved FTO transparent conductive film coating having a continuous feeder.

Description

비선형 연속 이송장치를 겸비한 곡면 FTO 투명 전도막 제조 방법{ Manufacturing Mothod of Curved Surface F-dopped Tin oxide film with Nonlinear In-line Lifting}Manufacturing Method of Curved Surface F-dopped Tin Oxide Film with Nonlinear In-line Lifting}

본 발명은 스프레이 열분해법에 의하여 복잡한 형상의 투명 기판위에 FTO 투명전도막을 형성하는 방법을 제공하기 위한 것이다. The present invention is to provide a method for forming an FTO transparent conductive film on a transparent substrate having a complicated shape by spray pyrolysis.

불소함유 산화주석 (FTO: F-doped Tin Oxide) 박막 소재는 고온안정성이 필요한 태양전지, 자동차용 서리제거 유리창, 투명히터등의 핵심 전극소재이며 디스플레이 분야에도 중요한 소재로 부각되고 있다.
FTO (F-doped Tin Oxide) thin film material is a key electrode material for solar cells, automotive defrost glass windows and transparent heaters that require high temperature stability and is emerging as an important material in the display field.

주석함유 산화인듐 (ITO: Tin-doped Indium Oxide) 박막은 저저항 재료로서 낮은 온도에서 증착이 가능하고 에칭특성이 우수하여 패터닝을 기반으로하는 디스플레이용에서 가장 광범위하게 사용되는 소재이지만, 고온에서 전기적 특성의 열화가 크고 화학적인 안정성이 결여되기 때문에, 열적 안정성, 화학적 내구성, 기계적 내구성 등이 요구되는 응용분야에는 사용하기 어려운 단점을 가지고 있다.
Tin-doped Indium Oxide (ITO) thin film is a low-resistance material that can be deposited at low temperatures and has excellent etching characteristics, making it the most widely used material for display based on patterning. Due to the large deterioration of properties and lack of chemical stability, it is difficult to use in applications requiring thermal stability, chemical durability, mechanical durability, and the like.

불소함유 산화주석은 산화주석(SnO2)에 소량의 불소(fluorine)가 도핑된 소재로서 산화주석의 산소(O)자리에 불소(F)가 치환되어 캐리어 전자의 농도를 증가 시키고, 이에 따라 비저항 값이 변하는 것으로 알려져 있다. 또한, 불소함유 산화주석 박막 소재는 산화주석(SnO2)의 열적, 화학적, 기계적 안정성으로 인해 ITO에 비하여 내열성과 내화학성이 우수한 장점이 있다.
Fluorine-containing tin oxide is a material in which tin oxide (SnO2) is doped with a small amount of fluorine, and fluorine (F) is substituted in the oxygen (O) site of tin oxide to increase the concentration of carrier electrons. It is known to change. In addition, the fluorine-containing tin oxide thin film material has an advantage of excellent heat resistance and chemical resistance compared to ITO due to the thermal, chemical, and mechanical stability of tin oxide (SnO 2).

스프레이 열분해(Spray Pyrolysis) 방법에 의한 FTO 제조 공정 기술은 초음파 분무, 액상 스프레이 분무방법들을 기초로 하고 있으며 이는 액상 FTO 프리커서 용액을 기상으로 부화시켜 가열된 기판위에 보내 코팅하는 기술이다.
FTO manufacturing process technology by spray pyrolysis method is based on ultrasonic spraying and liquid spray spraying method, which is a technique of incubating a liquid FTO precursor solution in a gaseous phase and sending it onto a heated substrate.

일반 CVD(Chemical vapor deposition)기술과 비슷해 보이지만, 매우 크고 수에서 수백 미크론 크기를 갖는 액적 (혹은 무화된 프리커서 액적)들을 수송 하는 데에는 상당한 이해력과 장비기술들이 요구된다. 이는 미크론 액적이 일반 단일 분자로 이루어진 CVD 프리커서의 확산, 응집성과 비교해보면 분명해진다. 확산성에서는 미크론 액적의 움직임이 매우 느려 별도의 캐리어 기체가 요구됨을 의미하며, 응집면에서는 미크론 액적이 매우 심각하게 발생하여 기상 혹은 벽면과의 충돌에서 액적이 더 이상 커지지 않게 하여야 한다.Although similar to conventional chemical vapor deposition (CVD) technology, it is very important to understand and equip the transport of very large droplets (or atomized precursor droplets) ranging in size from several hundreds of microns. This is evident in comparison to the diffusivity and cohesion of CVD precursors consisting of ordinary single molecules with micron droplets. The diffusivity means that the movement of the micron droplets is very slow and requires a separate carrier gas. On the flocculating surface, the micron droplets occur very seriously so that the droplets no longer grow in the weather or collision with the wall.

추가적으로 반응도중의 부산물로서 미크론 액적들에 의해 용매 및 반응가스가 막대하게 발생하고, 박막 형성시 기판 표면에 미립자상의 미스트가 발생한다.In addition, the solvent and the reaction gas are generated by the micron droplets as by-products during the reaction, and fine mist occurs on the surface of the substrate when the thin film is formed.

또한, 종래의 기술에서는 선형적인 이송장치를 활용하여 상층부의 노즐과 90도 방향으로 하부 기판을 위치하게 하고 미스트를 분사하는 방식이 사용되고 있으나 곡면과 같은 복잡한 형상의 투명 기판위에 FTO 투명전도막을 형성하기에는 막의 균일도가 현저히 떨어지게 된다.In addition, in the conventional technology, a method of spraying mist and placing a lower substrate in a 90 degree direction with a nozzle of an upper layer by using a linear transfer device is used. However, in order to form an FTO transparent conductive film on a transparent substrate having a complicated shape such as a curved surface, The uniformity of the film is significantly reduced.

스프레이 열분해를 통한 FTO 박막 제조법은 일반적으로 매우 어려워 현재는 한정된 업체에서 소량 생산되고 있으며 관련 기술들은 FTO 포함 응용 제품에 한정되고 있다. 대표적으로 태양전지 제조기술 (실리콘 태양전지, 염료감응 태양전지), 센서 응용기술, 터치판넬 기술 등이 있다.FTO thin film manufacturing by spray pyrolysis is generally very difficult and is currently being produced in small quantities by a limited number of companies. Representative examples include solar cell manufacturing technology (silicon solar cell, dye-sensitized solar cell), sensor application technology, and touch panel technology.

한편, FTO 장비 시스템 대신, 요소기술들이 다수 공지되어 있는데 대표적으로, 상층부 노즐과 하단부 기판사이에 원통형 후드를 구비하는 장치 (JP 2004-167394A), 프리커서 생성시키는 소스 장치 (JP 2006-236602A), 노즐을 다중으로 하여 움직이며 코팅하는 장치 (JP 2003-205235A), 기판 고정화 장치 (JP 2006-184341A), 대형기판 사용시 기판 변형 억제 시스템 (JP 2006-19135A) 등을 들 수가 있다. On the other hand, instead of the FTO equipment system, a number of element technologies are known, and typically, an apparatus having a cylindrical hood between an upper nozzle and a lower substrate (JP 2004-167394A), a source apparatus for generating a precursor (JP 2006-236602A), An apparatus for moving and coating a plurality of nozzles (JP 2003-205235A), a substrate immobilization apparatus (JP 2006-184341A), and a substrate strain suppression system (JP 2006-19135A) when using a large substrate.

상기 투명전도막을 코팅하기 위한 장치로서 예열 챔버, 증착챔버, 서냉열 챔버가 비선형적인 이송장치로 연결되어 있고 유리기판이 단계적으로 예열 챔버, 증착챔버, 서냉열 챔버로 이송됨으로서 곡면의 기판위에 박막의 균일도가 개선된 FTO (F-doped Tin Oxide) 기판을 제조하는 시스템을 개발하고자 한다.As a device for coating the transparent conductive film, the preheating chamber, the deposition chamber, and the slow cooling heat chamber are connected by a nonlinear transfer device, and the glass substrate is transferred to the preheating chamber, the deposition chamber, and the slow cooling heat chamber step by step, so that a thin film is formed on the curved substrate. To develop a system for manufacturing FTO (F-doped Tin Oxide) substrate with improved uniformity.

상기 예열 챔버는 기판의 표면처리 및 예열을 담당하는데, 플라즈마 표면 클리닝, 배리어막 코팅 등을 수행하여 표면처리된 기판을 증착 챔버로 수송시킨다.The preheating chamber is responsible for the surface treatment and preheating of the substrate, and performs the surface cleaning of the substrate, coating the barrier film, and the like to transport the surface-treated substrate to the deposition chamber.

상기 증착 챔버에는 상기 곡면 기판과 동일한 90도 방향에 원료급기 및 배기 노즐이 설치되고, 무화된 FTO 프리커서가 노즐로부터 분무되어 곡면 기판상에 증착이 되며, 반응물 가스, 캐리어가스, 미반응체 등은 노즐 측면부에 부착된 배기부를 통하여 빠져나간다. 이때 이송된 곡면 기판은 비선형 이송수단이 사용됨으로서, 곡면의 기판에 균일한 박막이 증착될 수 있다.The deposition chamber is provided with raw material supply and exhaust nozzles in the same 90 degree direction as the curved substrate, and atomized FTO precursor is sprayed from the nozzle to be deposited on the curved substrate, and reactant gas, carrier gas, unreacted material, and the like. Exits through the exhaust attached to the nozzle side. In this case, since the non-linear transfer means is used for the transferred curved substrate, a uniform thin film may be deposited on the curved substrate.

서냉열 챔버로 수송된 곡면 FTO가 코팅된 기판은 자연 냉각 혹은 기능성 냉각 (FTO 표면 물성 변환, 강화 유리 제조 등)을 통하여 최종적으로 다양한 FTO 기판을 얻게 해준다.The curved FTO-coated substrates transported to the slow cooling chamber result in various FTO substrates through natural cooling or functional cooling (FTO surface property conversion, tempered glass production, etc.).

상기 투명 전도막을 코팅을 하기 위한 기판으로 내열성 폴리머 필름인 폴리이미드(PI), 테플론수지(PTFE), 폴리노르보닌(PNB) 수지 및 소다라임 유리(Sodalime Glass), 저철분 유리(Low-Fe Glass)등을 포함한다. 또한 곡면 투명전도막 코팅재료로서 FTO, ITO, AZO, ZnO, SnO2, IZO, GZO, TiO2, SiO2 등과 같이 한정되지는 않는다.As a substrate for coating the transparent conductive film, polyimide (PI), Teflon resin (PTFE), polynorbornin (PNB) resin, soda lime glass, low iron glass (Low-Fe glass), which are heat-resistant polymer films ), Etc. Further, the curved transparent conductive film coating material is not limited to FTO, ITO, AZO, ZnO, SnO2, IZO, GZO, TiO2, SiO2 and the like.

본 발명은 기판이 공급되어 배출되는 과정까지 비선형 연속이송 장치를 구비하고, 상기 곡면 기판과 동일한 90도 방향에 원료급기 및 배기노즐을 설치하여, 원료가 공급되어진다. 이에따라 곡면과 같은 복잡한 형상의 투명기판위에 균일하게 원료가스가 공급되어 FTO 투명전도막을 형성하게 되므로 복잡한 형상의 FTO 기판을 양산 할 수 있다.The present invention includes a non-linear continuous transfer device until the substrate is supplied and discharged, and the raw material supply and exhaust nozzles are installed in the same 90 degree direction as the curved substrate to supply the raw materials. Accordingly, since the raw material gas is uniformly supplied on the transparent substrate having a complicated shape such as a curved surface to form an FTO transparent conductive film, the FTO substrate having a complicated shape can be mass-produced.

도 1. 종래의 기술(선형적인 이송장치가 설치된 경우).
도 2. 본 발명의 비선형 연속 이송장치를 겸비한 곡면 FTO 투명전도막 제조 장치 개략도.
도 3. 곡면 FTO 투명전도막의 디지털 사진.
도 4. 본 발명에서 제조된 7.3옴의 전기적인 특성을 나타내는 곡면 FTO 기판의 SEM 이미지I.
도 5. 본 발명에서 제조된 5.2옴의 전기적인 특성을 나타내는 곡면 FTO 기판의 SEM 이미지I.
도 6. 본 발명에서 제조된 곡면 FTO 기판의 광 투과도.
Figure 1. Prior art (where a linear feeder is installed).
Figure 2. Schematic diagram of a curved FTO transparent conductive film production apparatus having a non-linear continuous feeder of the present invention.
3. Digital photo of curved FTO transparent conductive film.
Figure 4. SEM image of a curved FTO substrate showing the electrical properties of 7.3 ohms prepared in the present invention.
FIG. 5. SEM image of curved FTO substrate showing 5.2 ohm electrical characteristics prepared in the present invention.
6. Light transmittance of the curved FTO substrate prepared in the present invention.

도 1은 종래의 선형적 이송장치를 활용한 FTO 코팅 시스템으로서 곡면과 같은 복잡한 형상의 투명 기판에 코팅하기에는 너무나 불균일한 막 균질도를 보인다. 하지만, 도 2에서 본 발명의 비선형 연속이송장치를 겸비한 곡면 FTO 코팅 시스템은 비선형적인 이송장치의 텐션 장치로 인해 곡면의 기판위로 코팅되어지는 미스트가 일정한 거리로 도달하게 됨으로서 균일한 박막을 형성할 수 있게 해준다. FIG. 1 shows a film uniformity that is too uneven to coat a transparent substrate having a complex shape such as a curved surface as a FTO coating system using a conventional linear transfer device. However, in FIG. 2, the curved FTO coating system having the nonlinear continuous transfer device of the present invention can form a uniform thin film by reaching a predetermined distance from the mist coated on the curved substrate due to the tensioning device of the nonlinear transfer device. To make it possible.

예열부 (2)에 도입된 기판은 표면처리 및 가열될 수 있다. 플라즈마 표면처리기는 (도면 표시 생략) 기판 표면을 활성화 상태로 바꾸면서 동시에 반응성 기체를 주입시켜 기판 표면에서 이온에너지를 이용한 새로운 기능성 작용기를 형성시킨다. 가열의 경우는 별도의 히터 (도면 표시 생략: 판 히터 혹은 hot wall heater)가 구비된다. 이렇게 예열된 기판은 증착챔버 (1)로 수송된다. 이때 챔버 사이에 구비된 셔터 혹은 에어커텐(4)을 통하여 챔버간 밀개폐가 이루어진다. 증착부에서는 별도의 히팅 시스템 (도면표시 생략: 판 히터 혹은 hot wall heater)을 둘 수가 있거나 혹은 회전하는 히터를 구비할 수 있다. 히터가 작동되면 기판 트레이가 회전하여 트레이 위에 얹혀진 기판이 함께 회전하게 된다. 이는 FTO 코팅막을 균일하게 해준다. The substrate introduced into the preheating unit 2 can be surface treated and heated. The plasma surface treatment machine (not shown) turns the substrate surface into an active state while simultaneously injecting a reactive gas to form new functional groups using ion energy on the substrate surface. In the case of heating, a separate heater (not shown: plate heater or hot wall heater) is provided. The preheated substrate is then transported to the deposition chamber 1. At this time, through the shutter or the air curtain (4) provided between the chamber between the chamber is closed and closed. The deposition unit may have a separate heating system (not shown: plate heater or hot wall heater) or may include a rotating heater. When the heater is activated, the substrate tray rotates so that the substrates on the tray rotate together. This makes the FTO coating film uniform.

증착부(1)은 기판과 90도 방향에 노즐을 구비하고 있으며 외부로부터 공급되어온 프리커서가 노즐을 통하여 증착부(1)내로 들어가게 된다. 이 때 프리커서의 플로우는 측면부에 구비되는 배기부 (10)에 의하여 기판에 도달하여 박막을 형성하지만, 이외의 반응생성물 가스, 미 반응가스, 캐리어가스 등이 배기부로부터 빠져 나오게 된다.The deposition unit 1 includes a nozzle in a 90 degree direction with the substrate, and the precursor supplied from the outside enters the deposition unit 1 through the nozzle. At this time, the flow of the precursor reaches the substrate by the exhaust part 10 provided on the side part, and forms a thin film, but other reaction product gases, unreacted gas, carrier gas, and the like exit from the exhaust part.

증착부 (1)에서 제조된 FTO 코팅기판은 서냉부(3)로 이송된다. 서냉부(3)에는 별도로 히터 (도면 표시 생략: 판 히터 혹은 hot wall heater), 냉각장치, 급랭장치 (강화 유리 혹은 FTO 기판 표면 모르폴로지 변화 등)의 장치들이 별도로 구비될 수 있다.The FTO coated substrate prepared in the deposition unit 1 is transferred to the slow cooling unit 3. The slow cooling unit 3 may be separately provided with a device of a heater (not shown in the drawing: a plate heater or a hot wall heater), a cooling device, a quenching device (such as tempered glass or FTO substrate surface morphology change).

본 발명의 기판이라 함은 주로 유리기판을 의미하지만, 불산에 내부식성이 있는 소재를 포함 한다 (본반응은 불산이 발생됨). 또한 본 발명의 기판이라 함은 유리기판에 배리어막이 코팅되어 있는 상태를 포함할 수 있다.The substrate of the present invention mainly means a glass substrate, but includes a material having corrosion resistance to hydrofluoric acid (this reaction generates hydrofluoric acid). In addition, the substrate of the present invention may include a state in which a barrier film is coated on a glass substrate.

본 발명의 기판이라 함은 광학설계를 통하여 유리기판에 미리 다중막이 코팅되어져 있는 상태를 포함한다.The substrate of the present invention includes a state in which a multilayer film is coated on a glass substrate in advance through an optical design.

따라서 본 발명에서는 상기 비선형 이송장치를 겸비하여 곡면과 같은 복잡한 형상의 기판에 FTO를 코팅하는 장비 및 공정 기술을 제공한다.Accordingly, the present invention provides an equipment and a process technology for coating the FTO on a substrate having a complex shape such as a curved surface having the nonlinear transfer device.

FTO 박막의 생성 과정은 파이로 졸(Pyro-sol) 원리. 혹은 상압 CVD(Chemical Vapor Deposition) 원리로 쉽게 설명된다.The formation process of FTO thin film is Pyro-sol principle. Or it is easily explained by the principle of chemical vapor deposition (CVD).

FTO 프리커서 용액은 SnCl4·5H20를 3차 증류수에 녹여 0.68 M이 되게 하고 F 도핑제로서 NH4F를 에탄올 용매에 녹여 1.2 M로 한 후 이 두 용액을 혼합 교반시키고, 필터링 하여 제조한다.FTO precursor solution was prepared by dissolving SnCl 4 · 5H20 in tertiary distilled water to 0.68 M and dissolving NH 4 F in ethanol as an F dopant to 1.2 M, then mixing and stirring the two solutions and filtering.

또한 용매를 순수 물만을 사용하여도 가능하다. 또한 기타 다른 알콜류의 사용도 가능하다.It is also possible to use only pure water as the solvent. It is also possible to use other alcohols.

또한 본 연구에서는 다양한 FTO막을 제조하기 위하여 상기 용액 조성 이외에도 알콜류, 에틸렌 글리콜(Ethylene glycol)를 부수적으로 첨가할 수 있다.In addition, in this study, alcohols and ethylene glycol may be additionally added in addition to the above solution composition to prepare various FTO membranes.

F 도핑량을 조절하기 위하여 NH4F의 량을 0.1에서 3 M까지 변화시키거나 불산(HF)를 0-2M 첨가할 수 있다. 따라서 본 FTO 막 제조용 프리커서 용액은 위에서 보여준 조성에 한정되는 것은 아니다. In order to control the amount of F doping, the amount of NH 4 F may be changed from 0.1 to 3 M, or 0-2 M of hydrofluoric acid (HF) may be added. Therefore, the precursor solution for preparing the FTO membrane is not limited to the composition shown above.

기판으로 사용된 일반 유리는 400-600도로 가열시 Na, K 등과 같은 불순물들이 기판 위로 확산되어 유리 기판의 표면을 손상시킨다. 이는 FTO막을 코팅하더라도 막 접착력과 막의 품질저하를 가져온다. 따라서 유리기판과 FTO막 사이에 불순물 유입을 차단하는 베리어 막 (Barrier layer) 코팅을 해야 한다.In general glass used as a substrate, when heated to 400-600 degrees, impurities such as Na and K diffuse onto the substrate, damaging the surface of the glass substrate. This results in a decrease in film adhesion and film quality even when the FTO film is coated. Therefore, a barrier layer coating must be applied between the glass substrate and the FTO film to block impurities from entering.

일반적으로 SiO2와 TiO2등과 같은 세라믹 막을 많이 사용하나 본 연구에서는 대표적으로 SiO2 베리어 막을 50-100 nm 정도로 딥코팅과 스프레이 코팅법을 이용하여 형성 시켰다. 작은 기판인 경우 딥 코팅법을 이용하고 큰 기판 및 곡면이 기판인 경우 스프레이 코팅법을 이용하여 SiO2 베리어 막을 형성시킨다. Generally, ceramic films such as SiO2 and TiO2 are used a lot, but in this study, SiO2 barrier films are typically formed by using dip coating and spray coating at about 50-100 nm. In the case of a small substrate, a dip coating method is used, and in the case of a large substrate and a curved surface, a SiO 2 barrier film is formed using a spray coating method.

딥 코팅법에서는 실리카졸 [에탄올(95%): Tetraethyl silicate: Nitric acid=90:11:0.5 (부피비)]를 제조하여 150 mm/min 속도로 딥 코팅한 후 300-400 도에서 5분간 열처리 하여 SiO2 베리어 막을 형성한다. 스프레이 코팅법은 대면적 기판이나 곡면이 있는 유리기판인 경우 실시한다. 실란시약류(SiH4, SiH2Cl2, Si(OC2H5)2, 등)를 공기 중에서 혹은 산소분위기 중에서 400-600도로 가열된 유리기판에 CVD 원리(스프레이)를 이용하여 간단히 성막시킬 수 있다. 고품질 유리를 사용하는 경우 즉, Na, K등의 불순물이 적은 유리 기판을 사용하는 경우 (예, 보로실리케이트 glass)에는 베리어막을 형성시키지 않아도 된다. In the dip coating method, a silica sol [ethanol (95%): Tetraethyl silicate: Nitric acid = 90: 11: 0.5 (volume ratio)] was prepared, dip coated at a speed of 150 mm / min, and then heat-treated at 300-400 degrees for 5 minutes. SiO 2 barrier film is formed. Spray coating is performed on large area substrates or curved glass substrates. Silane reagents (SiH 4, SiH 2 Cl 2, Si (OC 2 H 5) 2, etc.) can be easily formed on a glass substrate heated to 400-600 degrees in air or in an oxygen atmosphere using the CVD principle (spray). When using high quality glass, that is, when using glass substrates with few impurities, such as Na and K (for example, borosilicate glass), it is not necessary to form a barrier film.

기판 온도는 400-600도, SiO2 베리어막을 50-100nm로 코팅한 곡면 유리를 이용하는 것이 바람직하다. 이렇게 제조된 FTO 막의 면 저항은 5-8 오옴 정도가 된다. It is preferable to use the curved glass which coat | covered the substrate temperature 400-600 degree | times and 50-100 nm of SiO2 barrier film. The sheet resistance of the FTO film thus prepared is about 5-8 ohms.

도 3은 본 발명의 복잡한 형상과 같은 곡면의 FTO 투명 전도막의 실제 디지털 사진이다.3 is a real digital photograph of a curved FTO transparent conductive film like the complex shape of the present invention.

도 4는 본 발명에서 제조된 7.3옴의 전기적인 특성을 나타내는 곡면 FTO 기판의 SEM 이미지이다. 540nm의 박막 두께를 나타내며, SiO2 베리어막의 두께는 약 50nm이다. 또한 박막의 광 투과도는 80% 이며, 헤이즈는 10%를 보인다. (표1 참조)Figure 4 is an SEM image of a curved FTO substrate showing the electrical properties of 7.3 ohms prepared in the present invention. A thin film thickness of 540 nm is shown, and the thickness of the SiO 2 barrier film is about 50 nm. In addition, the light transmittance of the thin film is 80%, haze is 10%. (See Table 1)

도 5는 본 발명에서 제조된 5.2옴의 전기적인 특성을 나타내는 곡면 FTO 기판의 SEM 이미지이다. 700nm의 박막 두께를 나타내며, SiO2 베리어막의 두께는 약 50nm이다. 또한 박막의 광 투과도는 78% 이며, 헤이즈는 14%를 보인다. (표1 참조) FIG. 5 is an SEM image of a curved FTO substrate exhibiting electrical characteristics of 5.2 ohms prepared in the present invention. FIG. A thin film thickness of 700 nm is shown, and the thickness of the SiO 2 barrier film is about 50 nm. In addition, the light transmittance of the thin film is 78%, the haze is 14%. (See Table 1)

도 6은 본 발명에서 제조된 곡면 FTO 기판의 광 투과도를 나타낸다. #1과 #2은 78~80%의 광학적 특성을 보인다. (표1 참조)Figure 6 shows the light transmittance of the curved FTO substrate produced in the present invention. # 1 and # 2 show 78 ~ 80% optical properties. (See Table 1)

따라서, 본 발명의 비선형 연속이송 장치를 겸비한 FTO 투명전도막 코팅 장치를 이용하여 상업적으로 이용 가능한 다양한 FTO 기판을 제조할 수 있음을 보여준다.Accordingly, it can be seen that a variety of commercially available FTO substrates can be manufactured using the FTO transparent conductive film coating apparatus having the nonlinear continuous transfer device of the present invention.

SampleSample Thickness(nm)Thickness (nm) Grain Size(nm)Grain Size (nm) Seet Resistence(Ohm/□)Seet Resistence (Ohm / □) Transmission(%)Transmission (%) Haze(%)Haze (%) #1#One 540nm540 nm 100~150nm100-150 nm 7.3(/)7.3 (/) 80%80% 10%10% #2#2 700nm700 nm 200~250nm200-250 nm 5.2(/)5.2 (/) 78%78% 14%14%

Claims (7)

곡면 FTO 투명전도막 제조방법에 있어서,
예열부, 증착부, 서냉부 챔버가 비선형 이송장치로 연결되는 단계;
상기 증착부의 복잡한 형상(곡면)의 기판과 90도 위치에 노즐부가 부착되어 있고 노즐 측면부에는 배기부가 설치되어 이루어지는 단계;
기판이 예열부에서 표면처리 및 가열되고 증착부로 이동시키는 단계;
상기 증착부의 노즐을 통하여 FTO 프리커서가 분사되고 동시에 배기부를 통하여 FTO 프리커서가 기판에 도달하여 균일한 곡면 FTO 막을 형성하는 단계;
상기 FTO 코팅된 곡면 기판을 서냉부로 이동시켜 급랭 및 냉각하는 단계로 구성되는 것을 특징으로 하는 비선형 연속 이송장치를 겸비한 곡면 FTO 투명전도막 제조방법.
In the method of manufacturing a curved FTO transparent conductive film,
Connecting the preheating unit, the deposition unit, and the slow cooling unit chamber to the nonlinear transfer apparatus;
A nozzle part attached to the substrate having a complex shape (curved surface) at a 90 degree position and an exhaust part provided at the nozzle side part;
The substrate is surface treated and heated in the preheating section and moved to the deposition section;
Spraying an FTO precursor through the nozzle of the deposition unit and simultaneously reaching the substrate through the exhaust unit to form a uniform curved FTO film;
The method of manufacturing a curved FTO transparent conductive film having a non-linear continuous conveying device, characterized in that the step of moving the FTO coated curved substrate to a slow cooling unit to quench and cool.
제 1항에 있어서, 상기 예열부에서, 기판을 400-600 도로 가열하여 증착부로 이동시키는 것을 특징으로 하는 곡면 FTO 투명전도막 제조방법.The method of claim 1, wherein in the preheating unit, the substrate is heated to 400-600 degrees to move to the deposition unit. 제 1항에 있어서, 상기 예열부에서, 기판을 플라즈마 표면처리하여 증착부로 이동시키는 것을 특징으로 하는 곡면 FTO 투명전도막 제조방법.The curved FTO transparent conductive film manufacturing method according to claim 1, wherein, in the preheating unit, the substrate is plasma-treated to move to the deposition unit. 제 1항에 있어서, 상기 예열부에서, 곡면 기판위에 배리어막을 코팅함하여 증착부로 이동시키는 것을 특징으로 하는 곡면 FTO 투명전도막 제조방법.The method of manufacturing a curved FTO transparent conductive film according to claim 1, wherein in the preheating unit, a barrier film is coated on the curved substrate and moved to the deposition unit. 제 1항에 있어서, 상기 증착부에서, 400-600도의 기판 온도 조건에서 FTO 막을 코팅하는 것을 특징으로 하는 곡면 FTO 투명전도막 제조방법.The curved FTO transparent conductive film manufacturing method of claim 1, wherein the deposition unit coats the FTO film at a substrate temperature of 400-600 degrees. 제 1항에 있어서, 상기 증착부에서, 기판 트레이가 회전하는 것을 특징으로 하는 곡면 FTO 투명전도막 제조방법.The curved FTO transparent conductive film manufacturing method according to claim 1, wherein the substrate tray is rotated in the deposition unit. 제 1항에 있어서, FTO 프리커서가 스프레이 코팅법, 초음파 분무 코팅법, 초음파 스프레이 분무법 중 어느 하나를 통하여 제조되는 것을 특징으로 하는 곡면 FTO 투명전도막 제조방법.

The method of manufacturing a curved FTO transparent conductive film according to claim 1, wherein the FTO precursor is produced by any one of a spray coating method, an ultrasonic spray coating method, and an ultrasonic spray spraying method.

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