KR940000614A - GAAS Single Crystal Growth Device - Google Patents

GAAS Single Crystal Growth Device Download PDF

Info

Publication number
KR940000614A
KR940000614A KR1019920011613A KR920011613A KR940000614A KR 940000614 A KR940000614 A KR 940000614A KR 1019920011613 A KR1019920011613 A KR 1019920011613A KR 920011613 A KR920011613 A KR 920011613A KR 940000614 A KR940000614 A KR 940000614A
Authority
KR
South Korea
Prior art keywords
single crystal
gaas
crystal growth
thermostat
during
Prior art date
Application number
KR1019920011613A
Other languages
Korean (ko)
Other versions
KR100198246B1 (en
Inventor
김한생
Original Assignee
윤종용
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자주식회사 filed Critical 윤종용
Priority to KR1019920011613A priority Critical patent/KR100198246B1/en
Publication of KR940000614A publication Critical patent/KR940000614A/en
Application granted granted Critical
Publication of KR100198246B1 publication Critical patent/KR100198246B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 액체 봉지 인상법(Liquid Encapsulated Czochralski, 이하 LEC법이라 칭함)에 의한 GaAs 단결정을 성장시키는 방법에 관한 것으로, 좀 더 구체적으로는 GaAs를 합성시킬때는 보조 보온통(15)을 옆에서 위로(화살표방향) 이동시켜 상부 보온통(4)의 구멍을 열고, 결정 성장시 보조 보온통(15)으로 상부 보온통(4)의 구멍을 막는 GaAs 단결정 성장장치에 관한 것이다.The present invention relates to a method for growing GaAs single crystal by liquid encapsulated Czochralski (hereinafter referred to as LEC method), and more specifically, when synthesizing GaAs, the auxiliary thermos 15 are placed from side to side ( Arrow direction) to open the hole of the upper thermostat 4, and to the GaAs single crystal growth apparatus to block the hole of the upper thermostat 4 to the auxiliary thermostat 15 during crystal growth.

본 발명에 의하여 GaAs 단결정 제조시 B2O3액체 봉지제(8)와 Ar분위기 기체(2) 속의 온도 구배를 감소시키므로서 LEC법에서 발생하는 전위밀도를 줄일 수 있으며, 불균일한 전위밀도의 분포도 개선할 수 있었다. 또한 GaAs 성장 용액에 있는 탄소를 감소시키기 위한 방법을 효과적으로 할 수 있어서, 성장된 단결정에서의 탄소의 농도를 줄일 수 있었으며 보온통의 보온 효과로 인하여 석영봉(5)의 표면의 온도를 높일 수 있어서, 원료 합성시에 휘발하는 As가 석영봉(5) 표면에 붙는 것을 억제하여 결정 성장 과정을 계속해서 관찰 할 수 있었다.According to the present invention, it is possible to reduce the dislocation density generated by the LEC method by reducing the temperature gradient in the B 2 O 3 liquid encapsulant (8) and the Ar atmosphere gas (2) during the production of GaAs single crystal, and the distribution of the dislocation density unevenly I could improve. In addition, it was possible to effectively reduce the carbon in the GaAs growth solution, to reduce the concentration of carbon in the grown single crystal and to increase the temperature of the surface of the quartz rod (5) due to the thermal insulation effect of the thermostat, As volatilized As was prevented from adhering to the surface of the quartz rod 5 during the synthesis of raw materials, the crystal growth process could be continuously observed.

또한 GaAs를 비롯한 InP, GaP, InAs등 증기압이 높은 원소를 포함하는 Ⅲ-Ⅴ족 화합물을 반도체의 단결정 성장에 이용할 수 있었다.In addition, group III-V compounds including GaAs, InP, GaP, InAs, and other elements having high vapor pressures can be used for single crystal growth of semiconductors.

Description

GaAs 단결정 성장 장치GaAs single crystal growth device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 LEC법에 의한 GaAs 단결정 성장 장치의 개략도이고,1 is a schematic diagram of a GaAs single crystal growth apparatus by a conventional LEC method,

제2도는 본 발명의 LEC법에 의한 GaAs 단결정 성장 장치의 개략도이다.2 is a schematic diagram of a GaAs single crystal growth apparatus by the LEC method of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 고압 용기 2 : Ar 분위기 기체1: high pressure vessel 2: Ar atmosphere gas

4 : 상부 보온통 5 : 석영봉4: upper thermos 5: quartz rod

7 : 성장된 결정 8 : B2O3액체 봉지제7: grown crystals 8: B 2 O 3 liquid encapsulant

9 : GaAs 원료 용액 10 : 도가니9: GaAs raw material solution 10: Crucible

12 : 히터 13 : 보온 단열재12: heater 13: thermal insulation

14 : 도가니 회전 인상축 15 : 보조 보온통14: crucible rotation impression shaft 15: auxiliary thermos

Claims (1)

LEC법으로 단결정을 성장시키는데 있어서, GaAs를 합성시킬때는 보조 보온통(15)을 옆에서 위로(화살표 방향) 이동시켜 상부 보온통(4)의 구멍을 열고, 결정 성장시에는 보조 보온통(15)으로 상부 보온통(4)의 구멍을 막는 것을 특징으로 하는 GaAs 단결정 성장장치.In growing single crystals by the LEC method, when synthesizing GaAs, the auxiliary thermos 15 are moved from side to side (arrow direction) to open the holes of the upper thermos 4, and when the crystal is grown, the upper thermos 15 to the auxiliary thermos 15. GaAs single crystal growth apparatus, characterized in that for blocking the hole of the insulating tube (4). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920011613A 1992-06-30 1992-06-30 Single crystal growth apparatus for gaas KR100198246B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920011613A KR100198246B1 (en) 1992-06-30 1992-06-30 Single crystal growth apparatus for gaas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920011613A KR100198246B1 (en) 1992-06-30 1992-06-30 Single crystal growth apparatus for gaas

Publications (2)

Publication Number Publication Date
KR940000614A true KR940000614A (en) 1994-01-03
KR100198246B1 KR100198246B1 (en) 1999-06-15

Family

ID=19335635

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920011613A KR100198246B1 (en) 1992-06-30 1992-06-30 Single crystal growth apparatus for gaas

Country Status (1)

Country Link
KR (1) KR100198246B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980057248A (en) * 1996-12-30 1998-09-25 백운화 Vermicelli composition suitable for use as a sari

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980057248A (en) * 1996-12-30 1998-09-25 백운화 Vermicelli composition suitable for use as a sari

Also Published As

Publication number Publication date
KR100198246B1 (en) 1999-06-15

Similar Documents

Publication Publication Date Title
Chevy Improvement of growth parameters for Bridgman-grown InSe crystals
KR940000614A (en) GAAS Single Crystal Growth Device
GB1336672A (en) Methods of epitaxially depositing a semiconductor compound
JPS5939797A (en) Production device for gaas single crystal
JPH11335195A (en) Production of compound semiconductor crystal and compound semiconductor crystal
Gillessen et al. Growth of GaP single crystals by the synthesis, solute diffusion method
JPH11147785A (en) Production of single crystal
US4238252A (en) Process for growing indium phosphide of controlled purity
Bernardi Slider LPE growth of MCT using in situ Te-solution preparation
US3322501A (en) Preparation of gallium arsenide with controlled silicon concentrations
JPS57129896A (en) Liquid phase epitaxial growing apparatus
KR940014924A (en) GaAs single crystal growth method by horizontal zone melting method
JPS56149399A (en) Liquid phase epitaxial growing method
JPH0248495A (en) Method for growing silicon carbide single crystal
JPS6153186A (en) Heater for resistance heating
JPS5669297A (en) Method of growing to large-size single crystal
JPS62230694A (en) Production of gaas single crystal
Mucchino et al. Impurities Interactions in the Crystal Growth of LEC Gallium Arsenide
JPS5645890A (en) Crystal growing apparatus
Hirano et al. Crystal growth of low EPD S-doped< 100> InP by facet formation
JPS54128990A (en) Growing method for single crystal of gallium phosphide
KR930013225A (en) High Quality n-type GaAs Single Crystal Growth Method by Horizontal Bridgeman Method
JPS60127295A (en) Production of single crystal of gaas and device therefor
Bo-jun et al. Liquid Encapsulated Melt Zone Processing of GaAs
JPH06172098A (en) Production of gaas single crystal

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070105

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee