KR930022317U - Dram 어드레스 버퍼의 더블래치 센싱회로 - Google Patents

Dram 어드레스 버퍼의 더블래치 센싱회로

Info

Publication number
KR930022317U
KR930022317U KR2019920004114U KR920004114U KR930022317U KR 930022317 U KR930022317 U KR 930022317U KR 2019920004114 U KR2019920004114 U KR 2019920004114U KR 920004114 U KR920004114 U KR 920004114U KR 930022317 U KR930022317 U KR 930022317U
Authority
KR
South Korea
Prior art keywords
address
sensing circuit
double
dram
buffer
Prior art date
Application number
KR2019920004114U
Other languages
English (en)
Other versions
KR950002099Y1 (ko
Inventor
허윤종
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR92004114U priority Critical patent/KR950002099Y1/ko
Publication of KR930022317U publication Critical patent/KR930022317U/ko
Application granted granted Critical
Publication of KR950002099Y1 publication Critical patent/KR950002099Y1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408Address circuits
    • G11C11/4082Address Buffers; level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR92004114U 1992-03-14 1992-03-14 Dram 어드레스 버퍼의 더블래치 센싱회로 KR950002099Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92004114U KR950002099Y1 (ko) 1992-03-14 1992-03-14 Dram 어드레스 버퍼의 더블래치 센싱회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92004114U KR950002099Y1 (ko) 1992-03-14 1992-03-14 Dram 어드레스 버퍼의 더블래치 센싱회로

Publications (2)

Publication Number Publication Date
KR930022317U true KR930022317U (ko) 1993-10-16
KR950002099Y1 KR950002099Y1 (ko) 1995-03-24

Family

ID=19330330

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92004114U KR950002099Y1 (ko) 1992-03-14 1992-03-14 Dram 어드레스 버퍼의 더블래치 센싱회로

Country Status (1)

Country Link
KR (1) KR950002099Y1 (ko)

Also Published As

Publication number Publication date
KR950002099Y1 (ko) 1995-03-24

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